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ORCIDXingsheng Wang
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- affiliation: Huazhong University of Science and Technology, School of Optical and Electronic Information, Wuhan, China
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2020 – today
- 2024
[c11]Zifei Cai, Anaoxue Huang, Yifeng Xiong, Dejiang Mu, Xiangshui Miao, Xingsheng Wang:
Multi-order Differential Neural Network for TCAD Simulation of the Semiconductor Devices. DAC 2024: 198:1-198:6- [i2]Zhiliang Peng, Yicheng Wang, Zhengwu Yuan, Xingsheng Wang:
iPREFER: An Intelligent Parameter Extractor based on Features for BSIM-CMG Models. CoRR abs/2404.07827 (2024) - 2023
- [j4]Haowen Luo, Ruihan Li, Xiangshui Miao, Xingsheng Wang
:
A comprehensive study of device variability of sub-5 nm nanosheet transistors and interplay with quantum confinement variation. Sci. China Inf. Sci. 66(2) (2023) - [j3]Chengxu Wang, Hao Yu, Yichen Wang, Zichong Zhang, Xiangshui Miao, Xingsheng Wang:
Modeling and physical mechanism analysis of the effect of a polycrystalline-ferroelectric gate on FE-FinFETs. Sci. China Inf. Sci. 66(5) (2023) - [c10]Zhouchao Gan, Dongdong Zhang, Yinghao Ma, Chenyu Zhang, Xiangshui Miao, Xingsheng Wang:
Invited Paper: A Memristor-Based Stateful Majority-Inverter Graph Logic and 1-Bit Full Adder for In-Memory Computing Systems. ICTA 2023: 95-98 - 2020
- [c9]Hao Yu, Chengxu Wang, Xiangshui Miao, Xingsheng Wang:
A TCAD-based Study of NDR Effect in NC-FinFET. ICTA 2020: 102-103 - [c8]Chengxu Wang, Hao Yu, Xiangshui Miao, Xingsheng Wang:
Electrostatic Characteristics Analysis of Ferroelectric Tunneling Junctions with Different Structures. ICTA 2020: 112-113
2010 – 2019
- 2019
- [i1]Qiang Huo, Zhenhua Wu, Weixing Huang, Xingsheng Wang, Geyu Tang, Jiaxin Yao, Yongpan Liu, Feng Zhang, Ling Li, Ming Liu:
A Novel General Compact Model Approach for 7nm Technology Node Circuit Optimization from Device Perspective and Beyond. CoRR abs/1905.11207 (2019) - 2016
- [c7]A. Asenov, Yangang Wang, Binjie Cheng, Xingsheng Wang, Plamen Asenov, Talib Al-Ameri, Vihar P. Georgiev:
Nanowire transistor solutions for 5nm and beyond. ISQED 2016: 269-274 - 2014
- [c6]Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov:
Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability. ESSDERC 2014: 349-352 - 2013
- [j2]Xingsheng Wang, Binjie Cheng, Jente B. Kuang, Andrew R. Brown, Campbell Millar, Asen Asenov:
Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology. IEEE Des. Test 30(6): 18-28 (2013) - [c5]Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Jente B. Kuang, Sani R. Nassif, Asen Asenov:
Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability. ESSDERC 2013: 234-237 - [c4]Binjie Cheng, Xingsheng Wang, Andrew R. Brown, Jente B. Kuang, Dave Reid, Campbell Millar, Sani R. Nassif, Asen Asenov:
SRAM device and cell co-design considerations in a 14nm SOI FinFET technology. ISCAS 2013: 2339-2342 - 2012
- [c3]Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov:
Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design. ESSDERC 2012: 113-116 - 2011
- [c2]Nivard Aymerich, A. Asenov, Andrew R. Brown, Ramon Canal, Binjie Cheng, Joan Figueras, Antonio González, Enric Herrero, S. Markov, Miguel Miranda, Peyman Pouyan, Tanausú Ramírez, Antonio Rubio, Elena I. Vatajelu, Xavier Vera, Xingsheng Wang, Paul Zuber:
New reliability mechanisms in memory design for sub-22nm technologies. IOLTS 2011: 111-114 - 2010
- [j1]Binjie Cheng, Daryoosh Dideban, Negin Moezi, Campbell Millar, Gareth Roy, Xingsheng Wang, Scott Roy, Asen Asenov:
Statistical-Variability Compact-Modeling Strategies for BSIM4 and PSP. IEEE Des. Test Comput. 27(2): 26-35 (2010) - [c1]Binjie Cheng, Daryoosh Dideban, Negin Moezi, Campbell Millar, Gareth Roy, Xingsheng Wang, Scott Roy, Asen Asenov:
Capturing intrinsic parameter fluctuations using the PSP compact model. DATE 2010: 650-653
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