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David Trémouilles
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2010 – 2019
- 2018
- [j20]D. Hachem, David Trémouilles, Frederic Morancho, Gaëtan Toulon:
A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance. Microelectron. Reliab. 88-90: 406-410 (2018) - 2017
- [j19]F. Boige, Frédéric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud:
Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. Microelectron. Reliab. 76-77: 500-506 (2017) - [j18]Mouna Mahane, David Trémouilles, Marise Bafleur, Benjamin Thon, Marianne Diatta, Lionel Jaouen:
New triggering-speed-characterization method for diode-triggered SCR using TLP. Microelectron. Reliab. 76-77: 692-697 (2017) - 2015
- [j17]Houssam Arbess, Marise Bafleur, David Trémouilles, Moustafa Zerarka:
Optimization of a MOS-IGBT-SCR ESD protection component in smart power SOI technology. Microelectron. Reliab. 55(9-10): 1476-1480 (2015) - [j16]Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin:
Failure analysis of ESD-stressed SiC MESFET. Microelectron. Reliab. 55(9-10): 1542-1548 (2015) - 2014
- [j15]Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin:
Analysis of an ESD failure mechanism on a SiC MESFET. Microelectron. Reliab. 54(9-10): 2217-2221 (2014) - 2013
- [j14]Nicolas Monnereau, Fabrice Caignet, David Trémouilles, Nicolas Nolhier, Marise Bafleur:
Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation. Microelectron. Reliab. 53(2): 221-228 (2013) - 2012
- [j13]Jinyu Jason Ruan, Nicolas Monnereau, David Trémouilles, Nicolas Mauran, Fabio Coccetti, Nicolas Nolhier, Robert Plana:
An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices. IEEE Trans. Instrum. Meas. 61(2): 456-461 (2012)
2000 – 2009
- 2009
- [j12]Marianne Diatta, Emilien Bouyssou, David Trémouilles, P. Martinez, F. Roqueta, O. Ory, Marise Bafleur:
Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD). Microelectron. Reliab. 49(9-11): 1103-1106 (2009) - [j11]Jinyu Jason Ruan, Nicolas Nolhier, George J. Papaioannou, David Trémouilles, Vincent Puyal, C. Villeneuve, T. Idda, Fabio Coccetti, Robert Plana:
Accelerated lifetime test of RF-MEMS switches under ESD stress. Microelectron. Reliab. 49(9-11): 1256-1259 (2009) - [j10]Dimitri Linten, Steven Thijs, Jonathan Borremans, Morin Dehan, David Trémouilles, Mirko Scholz, M. I. Natarajan, Piet Wambacq, Stefaan Decoutere, Guido Groeseneken:
A plug-and-play wideband RF circuit ESD protection methodology: T-diodes. Microelectron. Reliab. 49(12): 1440-1446 (2009) - 2007
- [j9]David Trémouilles, Steven Thijs, Philippe Roussel, M. I. Natarajan, Vesselin K. Vassilev, Guido Groeseneken:
Transient voltage overshoot in TLP testing - Real or artifact? Microelectron. Reliab. 47(7): 1016-1024 (2007) - 2005
- [j8]Nicolas Guitard, Fabien Essely, David Trémouilles, Marise Bafleur, Nicolas Nolhier, Philippe Perdu, André Touboul, Vincent Pouget, Dean Lewis:
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure. Microelectron. Reliab. 45(9-11): 1415-1420 (2005) - [c1]Philippe Jansen, Steven Thijs, Dimitri Linten, M. I. Natarajan, Vesselin K. Vassilev, Mingxu Liu, Ann Concannon, David Trémouilles, Takeshi Nakaie, Masanori Sawada, Vladislav A. Vashchenko, Marcel ter Beek, Takumi Hasebe, Stefaan Decoutere, Guido Groeseneken:
RF ESD protection strategies - the design and performance trade-off challenges. CICC 2005: 489-496 - 2004
- [j7]David Trémouilles, Marise Bafleur, Géraldine Bertrand, Nicolas Nolhier, Nicolas Mauran, Lionel Lescouzères:
Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency. IEEE J. Solid State Circuits 39(10): 1778-1782 (2004) - [j6]Nicolas Guitard, David Trémouilles, Marise Bafleur, Laurent Escotte, Laurent Bary, Philippe Perdu, Gérard Sarrabayrouse, Nicolas Nolhier, Roberto Reyna-Rojas:
Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications. Microelectron. Reliab. 44(9-11): 1781-1786 (2004) - 2003
- [j5]David Trémouilles, Géraldine Bertrand, Marise Bafleur, Felix Beaudoin, Philippe Perdu, Nicolas Guitard, Lionel Lescouzères:
TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology. Microelectron. Reliab. 43(1): 71-79 (2003) - [j4]Thomas Beauchêne, Dean Lewis, Felix Beaudoin, Vincent Pouget, Romain Desplats, Pascal Fouillat, Philippe Perdu, Marise Bafleur, David Trémouilles:
Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization. Microelectron. Reliab. 43(3): 439-444 (2003) - [j3]Thomas Beauchêne, David Trémouilles, Dean Lewis, Philippe Perdu, Pascal Fouillat:
Characterization of ESD induced defects using Photovoltaic Laser Stimulation (PLS). Microelectron. Reliab. 43(9-11): 1577-1582 (2003) - 2001
- [j2]Géraldine Bertrand, Christelle Delage, Marise Bafleur, Nicolas Nolhier, Jean-Marie Dorkel, Quang Nguyen, Nicolas Mauran, David Trémouilles, Philippe Perdu:
Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology. IEEE J. Solid State Circuits 36(9): 1373-1381 (2001) - [j1]Romain Desplats, Felix Beaudoin, Philippe Perdu, Patrick Poirier, David Trémouilles, Marise Bafleur, Dean Lewis:
Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation. Microelectron. Reliab. 41(9-10): 1539-1544 (2001)
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