Multi-scale, Multi-physics Modeling and Simulation of Single Event Effects in Digital Electronics: from Particles to Systems

JL Autran, D Munteanu - IEEE Transactions on Nuclear Science, 2023 - ieeexplore.ieee.org
This article aims to provide a survey of modeling and simulation of single-event effects
(SEEs) in digital electronics at device, circuit, and system levels. It primarily focuses on the …

Machine learning regression-based single-event transient modeling method for circuit-level simulation

C Xu, Y Liu, X Liao, J Cheng… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
In this article, a novel machine learning regression-based single-event transient (SET)
modeling method is proposed. The proposed method can obtain a reasonable and accurate …

An analytical model of single-event transients in double-gate MOSFET for circuit simulation

YM Aneesh, SR Sriram, KR Pasupathy… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
In this paper, a physics-based bias-dependent model of single-event transients (SETs) in
double-gate (DG) MOSFET suitable for circuit simulation is presented. The existing …

A comprehensive analysis on the resilience of adiabatic logic families against transient faults

R Narimani, B Safaei, A Ejlali - Integration, 2020 - Elsevier
With the emergence of various battery operated technologies in different computing domains
and the challenge of heating in such technologies, the issue of energy dissipation has …

Ternary SRAM circuit designs with CNTFETs

DK Abdelrahman, ME Fouda, I Alouani… - … Journal of Circuit …, 2023 - Wiley Online Library
Static random‐access memory (SRAM) is a cornerstone in modern microprocessors
architecture, as it has high power consumption, large area, and high complexity. Also, the …

Design of soft error correction flip-flop cells for highly reliable applications

H Li, X Zhao, J Li - Microelectronics Reliability, 2024 - Elsevier
With the development of technology, the vulnerability of integrated circuits to Single Event
Effect (SEE) increases, and the sensitivity of flip-flops to soft errors induced by Single Event …

[HTML][HTML] Design of radiation-tolerant digital-to-analog converter and investigation on analog single event transient effects

AH Suresh, C Carta, G Fischer - AEU-International Journal of Electronics …, 2024 - Elsevier
A circuit design methodology for space applications is presented with an 8-bit resistive
digital-to-analog converter (DAC) with XY addressing mode and BiCMOS buffer designed in …

A Method for Automatically Predicting the Radiation-Induced Vulnerability of Unit Integrated Circuits

R Dong, H Lu, C Yang, Y Zhang, R Yao, Y Wang… - Micromachines, 2024 - mdpi.com
With the rapid development of semiconductor technology, the reduction in device operating
voltage and threshold voltage has made integrated circuits more susceptible to the effects of …

An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal–Oxide–Semiconductor Field-Effect Transistor

Y Zhang, H Lu, C Liu, Y Zhang, R Yao, X Liu - Micromachines, 2023 - mdpi.com
In this paper, a single-event transient model based on the effective space charge for
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …

Single-event transient tolerant optical receiver using triple modular redundancy

S Sattar, G Cowan - 2022 IEEE International Symposium on …, 2022 - ieeexplore.ieee.org
In this work, a single-event transient tolerant optical receiver using triple modular
redundancy (TMR) is presented. The TMR method splits a conventional receiver into three …