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    Built-In Avalanche Diode For Surge Absorbing Darlington: Silicon NPN Triple Diffused Planar Transistor

    Uploaded by

    chili_s16
    This document contains specifications and characteristic curves for the 2SD2141 silicon NPN triple diffused planar transistor. It includes: - Absolute maximum ratings and electrical characteristics such as current, voltage, power dissipation, and frequency ratings. - Typical collector-emitter voltage (VCE) versus collector current (IC) , current gain (hFE) versus collector current, and cut-off frequency (fT) versus emitter current characteristics curves. - Derating curves showing maximum power dissipation versus ambient temperature under different heatsink conditions. - Package dimensions and equivalent circuit diagram for the TO-220 packaged device.

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    © All Rights Reserved
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    Built-In Avalanche Diode For Surge Absorbing Darlington: Silicon NPN Triple Diffused Planar Transistor

    Uploaded by

    chili_s16
    14 views1 page
    This document contains specifications and characteristic curves for the 2SD2141 silicon NPN triple diffused planar transistor. It includes: - Absolute maximum ratings and electrical characteristics such as current, voltage, power dissipation, and frequency ratings. - Typical collector-emitter voltage (VCE) versus collector current (IC) , current gain (hFE) versus collector current, and cut-off frequency (fT) versus emitter current characteristics curves. - Derating curves showing maximum power dissipation versus ambient temperature under different heatsink conditions. - Package dimensions and equivalent circuit diagram for the TO-220 packaged device.

    Original Description:

    datasheet

    Original Title

    Data Sheet

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    This document contains specifications and characteristic curves for the 2SD2141 silicon NPN triple diffused planar transistor. It includes: - Absolute maximum ratings and electrical characteristics such as current, voltage, power dissipation, and frequency ratings. - Typical collector-emitter voltage (VCE) versus collector current (IC) , current gain (hFE) versus collector current, and cut-off frequency (fT) versus emitter current characteristics curves. - Derating curves showing maximum power dissipation versus ambient temperature under different heatsink conditions. - Package dimensions and equivalent circuit diagram for the TO-220 packaged device.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    14 views1 page

    Built-In Avalanche Diode For Surge Absorbing Darlington: Silicon NPN Triple Diffused Planar Transistor

    Uploaded by

    chili_s16
    This document contains specifications and characteristic curves for the 2SD2141 silicon NPN triple diffused planar transistor. It includes: - Absolute maximum ratings and electrical characteristics such as current, voltage, power dissipation, and frequency ratings. - Typical collector-emitter voltage (VCE) versus collector current (IC) , current gain (hFE) versus collector current, and cut-off frequency (fT) versus emitter current characteristics curves. - Derating curves showing maximum power dissipation versus ambient temperature under different heatsink conditions. - Package dimensions and equivalent circuit diagram for the TO-220 packaged device.

    Copyright:

    © All Rights Reserved
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    of 1

    147

    2SD2141
    I CVCE Characteristics (Typical)
    hFEI C Characteristics (Typical) j - at Characteristics
    VCE( sat ) I B Characteristics (Typical)
    PcTa Derating
    0
    0
    5
    10
    2 4 6
    Col l ect or - Emi t t er Vol t age VCE( V)
    C
    o
    l
    l
    e
    c
    t
    o
    r

    C
    u
    r
    r
    e
    n
    t

    I
    C
    (
    A
    )
    Safe Operating Area (Single Pulse)
    1
    5
    0
    m
    A
    I B=1mA
    2mA
    4mA
    1
    8
    m
    A 2
    0
    m
    A
    120mA 90mA 60mA
    0
    3
    2
    1
    0. 2 1 0. 5 10 5 200 100 50
    Base Cur r ent I B( mA)
    C
    o
    l
    l
    e
    c
    t
    o
    r

    C
    u
    r
    r
    e
    n
    t

    I
    C
    (
    A
    )
    1A
    3A
    5A
    I C=7A
    0. 02 0. 1 1 0. 5 10 5
    5000
    10000
    1000
    500
    100
    10
    50
    Col l ect or Cur r ent I C( A)
    D
    C

    C
    u
    r
    r
    e
    n
    t

    G
    a
    i
    n

    h
    F
    E
    ( VCE=2V)
    Typ
    0. 1
    1
    5
    0. 5
    1 10 100 1000
    Ti me t ( ms)
    T
    r
    a
    n
    s
    i
    e
    n
    t

    T
    h
    e
    r
    m
    a
    l

    R
    e
    s
    i
    s
    t
    a
    n
    c
    e

    j
    -
    a
    (

    C
    /
    W
    )
    1
    m
    s
    1
    0
    m
    s
    1
    0
    0
    m
    s
    50 10 5 1 100 500
    0. 01
    0. 05
    0. 1
    1
    0. 5
    10
    20
    5
    Col l ect or - Emi t t er Vol t age VCE( V)
    C
    o
    l
    l
    e
    c
    t
    o
    r

    C
    u
    r
    r
    e
    n
    t

    I
    C
    (
    A
    )
    D
    C
    Wi t hout Heat si nk
    Nat ur al Cool i ng
    40
    30
    20
    10
    2
    0
    0 25 50 75 100 125 150
    Ambi ent Temper at ur e Ta( C)
    M
    a
    x
    i
    m
    u
    m

    P
    o
    w
    e
    r

    D
    i
    s
    s
    i
    p
    a
    t
    i
    o
    n

    P
    C
    (
    W
    )
    W
    i
    t
    h

    I
    n
    f
    i
    n
    i
    t
    e

    h
    e
    a
    t
    s
    i
    n
    k
    Wi t hout Heat si nk
    50x50x2
    100x100x2
    150x150x2
    I CVBE Temperature Characteristics (Typical)
    0
    10
    5
    0 2. 0 2. 4 1. 0
    Base- Emi t t or Vol t age VBE( V)
    C
    o
    l
    l
    e
    c
    t
    o
    r

    C
    u
    r
    r
    e
    n
    t

    I
    C
    (
    A
    )
    ( VCE=4V)
    1
    2
    5

    C

    (
    C
    a
    s
    e

    T
    e
    m
    p
    )
    2
    5

    C

    (
    C
    a
    s
    e

    T
    e
    m
    p
    )

    3
    0

    C

    (
    C
    a
    s
    e

    T
    e
    m
    p
    )
    hFEI C Temperature Characteristics (Typical)
    0. 02 0. 1 1. 0 5 0. 5 10
    5000
    10000
    1000
    500
    100
    50
    20
    Col l ect or Cur r ent I C( A)
    D
    C

    C
    u
    r
    r
    e
    n
    t

    G
    a
    i
    n

    h
    F
    E
    ( VCE=2V)
    1
    2
    5

    5
    5

    C
    2
    5

    C
    f TI E Characteristics (Typical)
    ( VCE=12V)
    Emi t t er Cur r ent I E( A)
    0. 05 0. 01 01 0. 5 1 5
    0
    20
    10
    30
    40
    C
    u
    t
    -
    o
    f
    f

    F
    r
    e
    q
    u
    e
    n
    c
    y

    f
    T
    (
    M
    H
    Z
    )
    Typ
    Natural Cooling
    Silicone Grease
    Heatsink: Aluminum
    in mm
    Silicon NPN Triple Diffused Planar Transistor
    Application : Ignitor, Driver for Solenoid and Motor, and General Purpose
    Sym bol
    VC B O
    VC EO
    VEB O
    IC
    IB
    PC
    Tj
    Tstg
    2SD 2141
    380 50
    380 50
    6
    6(Pulse10)
    1
    35(Tc= 25C )
    150
    55 to + 150
    U nit
    V
    V
    V
    A
    A
    W
    C
    C
    IAbsolute maximum ratings IElectrical Characteristics
    2SD 2141
    10m ax
    20m ax
    330 to 430
    1500m in
    1.5m ax
    20typ
    95typ
    U nit
    A
    m A
    V
    V
    M H z
    pF
    C onditions
    VC B = 330V
    VEB = 6V
    IC = 25m A
    VC E= 2V, IC = 3A
    IC = 4A , IB = 20m A
    VC E= 12V, IE= 0.5A
    VC B = 10V, f= 1M H z
    (Ta=25C) (Ta=25C)
    Sym bol
    IC B O
    IEB O
    V(B R )C EO
    hFE
    VC E(sat)
    fT
    C O B
    External Dimensions FM20(TO220F)
    3.30.2
    10.10.2
    4
    .
    0

    0
    .2
    1
    6
    .
    9

    0
    .3
    1
    3
    .
    0
    m
    i
    n
    8
    .
    4

    0
    .2
    0
    .
    8

    0
    .2
    3
    .
    9

    0
    .2
    2.54 2.54
    1.350.15
    0.85
    +0.2
    -0.1
    1.350.15
    2.20.2
    4.20.2
    2.8
    c0.5
    2.40.2 0.45
    +0.2
    -0.1
    B E C
    a
    b
    Weight : Approx 2.0g
    a. Type No.
    b. Lot No.
    Built-in Avalanche Diode
    for Surge Absorbing
    Darlington
    B
    C
    E
    (1. 5k)(100)
    Equivalent circuit
    www.DataSheet4U.com

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