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    EC238 Electronics I: MOSFET DC and Biasing

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    Sara El-Gendy
    This document discusses MOSFET biasing techniques including: 1) Fixed biasing where a transistor operates in saturation with a fixed gate voltage and drain current calculated. 2) Self biasing where a transistor's gate is connected to its drain in a diode configuration, ensuring saturation. The drain resistance is calculated to give a target drain current. 3) Voltage divider biasing where two resistors form a voltage divider to set the transistor's gate-source voltage, again ensuring saturation operation. Drain current and resistor values can be calculated. Example circuits demonstrate each technique and solutions are provided.

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    EC238 Electronics I: MOSFET DC and Biasing

    Uploaded by

    Sara El-Gendy
    85 views9 pages
    This document discusses MOSFET biasing techniques including: 1) Fixed biasing where a transistor operates in saturation with a fixed gate voltage and drain current calculated. 2) Self biasing where a transistor's gate is connected to its drain in a diode configuration, ensuring saturation. The drain resistance is calculated to give a target drain current. 3) Voltage divider biasing where two resistors form a voltage divider to set the transistor's gate-source voltage, again ensuring saturation operation. Drain current and resistor values can be calculated. Example circuits demonstrate each technique and solutions are provided.

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    electronics

    Original Title

    -lec8_MOS_DC

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    This document discusses MOSFET biasing techniques including: 1) Fixed biasing where a transistor operates in saturation with a fixed gate voltage and drain current calculated. 2) Self biasing where a transistor's gate is connected to its drain in a diode configuration, ensuring saturation. The drain resistance is calculated to give a target drain current. 3) Voltage divider biasing where two resistors form a voltage divider to set the transistor's gate-source voltage, again ensuring saturation operation. Drain current and resistor values can be calculated. Example circuits demonstrate each technique and solutions are provided.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    85 views9 pages

    EC238 Electronics I: MOSFET DC and Biasing

    Uploaded by

    Sara El-Gendy
    This document discusses MOSFET biasing techniques including: 1) Fixed biasing where a transistor operates in saturation with a fixed gate voltage and drain current calculated. 2) Self biasing where a transistor's gate is connected to its drain in a diode configuration, ensuring saturation. The drain resistance is calculated to give a target drain current. 3) Voltage divider biasing where two resistors form a voltage divider to set the transistor's gate-source voltage, again ensuring saturation operation. Drain current and resistor values can be calculated. Example circuits demonstrate each technique and solutions are provided.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    of 9

    EC238 Electronics I

    Lecture 8
    MOSFET DC and Biasing

    Example 1

    An enhancement NMOS transistor with


    Vt= 0.7V has its source terminal
    grounded and a 1.5V dc applied to the
    gate. In what region does operate for
    a)

    VD = 0.5V

    b)

    VD = 0.9V

    c)

    VD=3V

    Solution

    a)

    Triode

    b)

    Saturation

    c)

    Saturation

    Example 2
    If the transistor in example 1 has nCox
    = 100 A/V2, W=10 m and L=1 m, find
    the value of drain current when VD=0.5
    and VD=3V.
    Solution

    a)

    The transistor in triode mode

    I D n Cox
    ID
    ID
    3

    b)

    W
    L

    10
    100 *
    1
    275A

    ID= 320 A

    1 2
    (
    V

    V
    )
    V

    VDS
    GS
    t
    DS

    0.8 * 0.5 0.52


    2

    Example 2
    b)

    Transistor in saturation mode

    n Cox W
    2

    ID
    (VGS Vt )
    2
    L
    100 10
    2
    ID
    [ 0 .8 ]
    2
    1
    I D 320 A
    4

    Fixed bias Technique


    The simplest of biasing arrangements for the MOSFET
    Example: Calculate the bias current of M1 in Fig. 1, the
    transistor is in saturation mode. Assume nCox = 100A/V2 ,
    Vth = 0.4 V and VG =1V.

    Solution

    M1 in saturation region

    Must check our assumption by calculating the drain potential:

    Self bias Technique


    Need only one DC battery

    Example :Design the circuit shown to obtain a current ID


    of 0.4mA. R and find the dc voltage VD. The NMOS
    transistor have Vt= 2V, has nCox = 20 A/V2, L =10 m and
    W=100 m. neglect the channel length modulation effect
    Solution
    (assume = 0)
    VD= VG then transistor operates in
    saturationregion.
    C W
    ID

    ox

    (V

    GS

    Vt ) 2

    20 100
    400 A

    [VDS 2]2
    2
    10
    6

    VDS = 4 and 0 V

    Self bias Technique


    VDS = 4

    RD

    VDD VD

    ID
    10 4

    15 K
    0.4

    o This is called: Diode-Connected MOSFET.


    o It always works in saturation

    Voltage Divider Bias

    Same as BJT bias technique but IG =0 so

    Example The PMOS in circuit shown is working in


    saturation. The RG1 =2M, R2=3M, RD=6k and
    VD=3V. Let the enhancement type PMOS transistor
    have Vt= -1V, and Kp (W/L)= 1 mA/V2
    Solution
    o ID= VD/RD = 3/6 = 0.5mA
    oSince transistor operates in saturation region
    ID
    0.5

    n Cox W
    2

    GS

    Vt ) 2

    1
    1 [VGS ( 1)]2
    2

    oVGS= 0 or -2
    8

    (V

    Voltage Divider Bias


    VGS = -2V = VG - VS
    VS = 5V , VG = +3V

    2M =

    VGS
    3V

    Vt = -1V

    3M =

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