Roll No.

: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _
Amrita Vishwa Vidyapeetham
Amrita School of Engineering, Coimbatore
B.Tech. Second Assessment Examinations – September 2018
Third Semester
Electrical & Electronics Engineering
15EEE201 Analog Electronic Circuits
Answer Key
Time: Two hours Maximum: 50 Marks
Answer all questions
1. In the following circuit, what is the region of operation of MOSFET? (2 marks) CO2
Solution: VDS = VGS = VDD
BTL : L2
MOSFET operates in saturation region

2. In the following current mirror circuit, the MOSFETs are identical. Determine the current I CO2
indicated in the circuit. (2 marks) BTL : L3
Solution: I = IQ

3. Consider two MOSFETs A and B that are identical in all respects except that A’s channel is CO2
twice as wide as B’s channel: WA = 2WB. Under identical bias what is the relationship BTL : L3
between the drain current of A and B? (2 marks)
Solution: IA = 2IB

4. Draw the normalized transfer characteristics of MOS differential pair indicating the range CO3
of differential input voltage assuming equilibrium situation. (2 marks)
BTL : L1
Solution:

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5. The MOSFET shown below has Vt = 1 V, kn’ = 100 μA/V2, W/L = 50. Find the value of R, CO2
so that vI = VDD = + 5V, rDS = 50 Ω and v0 =50 mV. Also, find the region of operation. BTL : L3
(3 marks)
Solution: VI = VGS = 5V, Vo = VDS = 0.05 V
rDS = VDS/ID => ID = 0.05/50 = 0.001 = 1 mA
5−0.05
R = VDD – Vo / ID = 0.001
= 4.95 kΩ (2 marks)
VDS < VGS – Vt , hence in Triode region (1 mark)

6. An n-channel MOSFET with Vtn = 1 V, kn= 0.8 mA/V2 is biased to operate in its saturation CO2
region with ID = 1 mA. Determine the transconductance gm. If vgs changes with 1 mV, by BTL : L4
how does the drain current change? (3 marks)
Solution:
gm = √2𝑘𝑛𝐼 = √2 x 0.8 x 1.6 = 1.26 mA/V (1 mark)
ID = gmVgs = 1.26 m x 1m = 1.26 µA (2 marks)

7. In the circuit shown below, transistors Q1 and Q2 have Vt = 1V, and the process CO3
transconductance parameter kn’ = 100 μA/V , (W/L)1 = (W/L)2 = 20. Assuming λ = 0, find BTL : L4
2

V1, V2 and V3. (3 marks)

Solution:
Current of 200µA is divided equally between Q1 and Q2
as VGS1 = VGS2 => ID1 = ID2 = 100µA
VGS = VG – VS = 0 – V3
Assuming both MOSFETs in saturation,
1
ID1 = 𝑘𝑛′ (W/L) (−𝑉3 − 1)2 => V3 = - 1 ±√0.1
2
V3 = -1.32 or -0.684 . Select V3= -1.32 V so ID ≠ 0.
(2 marks)
V1 = V2 = VDD - IDRD = 5 – 0.1m x 40k = 1 V
(1 mark)
8. For a switching application of power MOSFET shown below, the load in the circuit is a coil CO2
of an electromagnet that requires a current of 0.5 A when turned on. The effective load BTL : L4
resistance varies between 8 and 10 Ω, depending on temperature and other variables. A 10V
power supply is available and the transistor parameters are kn’ = 80 μA/V2, W/L = 781 and
Vtn = 1V. Find VGS to bias the transistor so that it will always be in saturation region. Also
determine the maximum power dissipation in the transistor. (3 marks)
Solution:
1
ID = 2 𝑘𝑛′ (W/L) (𝑉𝐺𝑆 − 𝑉𝑡 )2 => VGS = 5 V (1 mark)
VDS = VDD – IDR
With R = 8 Ω, VDS = 10 – (0.5 x 8) = 6V
With R = 10 Ω, VDS = 10 – (0.5 x 10) = 5V
Maximum Power dissipation, Pmax = VDSmaxID = 6x0.5 = 3W
(2 marks)

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9. The parameters of the transistor are kn = 0.5 mA/V2, Vtn = 1.2 V and λ = 0. Further, the CO2
bias currents is IQ = 50 μA. Determine VGS and VDS for the circuit. (5 marks)
BTL : L3
Solution:
1
ID = 𝑘𝑛′ (W/L) (𝑉𝐺𝑆 − 𝑉𝑡 )2
2

=> VGS = 1.2 ±0.45 = 1.65 or 0.75

VGS = 1.65 V (3 marks)

VDS = VD – VS = 5 – (-1.65) = 6.65 V (2 marks)

10. The NMOS transistors in the circuit shown below have L1 = L2 = L3= 1 μm, μnCox = 120 CO2
μA/V , Vt = 1 V. Find the required values of gate width for each of Q1, Q2 and Q3 to obtain
2
BTL : L5
the voltage and current values indicated. (5 marks)

Solution:
VGS1 = 1.5 V, W1 = 8 µm (2 marks)
VGS2 = 2 V, W2 = 2 µm (2 marks)
VGS3 = 1.5 V, W3 = 8 µm (1 mark)

11. The n-channel MOSFET in this circuit has Kn’(W/L) = 2 mA/V2 and Vtn=1V and VA = 100 CO3
V. The bias circuit establishes VGS = 2V and IG = 0.
BTL : L4

a) Determine the dc operating point. (3 marks)

Solution: RG = 10M || 5M = 3.34 MΩ
VG = (5/15) x 15 V = 5 V (1 mark)
VS = VG - VGS = 5 – 2 = 3 V
VD = VDD – IDRD = 7.5 V (1 mark)
ID = VS/RS = 3/3k = 1mA (1 mark)

b) Draw and label the small signal model for the circuit. (2 marks)
2𝐼
gm = 𝑉𝑜𝑣 = 2 mS
r0 = VA/I = 100kΩ

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 c) Determine the small-signal voltage gain and overall voltage gain. (3 marks)
vo = - gmvgs(RD||RL||ro) = - 8.23 V/V (1 mark)
vo/ vi =7.98 V/V (2 marks)
d) If vi = 0.2 sin(2π1000t) V, find the output voltage. (2 marks)
vo = - 8 vi = - 8 (0.2 sin(2π1000t))
= - 1.6 sin(2π1000t) V

12. A NMOS differential pair is biased by a current source of I = 0.2 mA having an output CO3
resistance RSS=100 kΩ. The amplifier has drain resistance RD = 10 kΩ, using transistors
BTL : L3
with kn’W/L = 3mA/V2, and r0 that is large.
a) If the output is taken single-endedly, find the differential gain, the common-mode
gain and the CMRR. (5 marks)
Solution:
ID = 𝑘𝑛′ (W/L) (𝑉𝐺𝑆 − 𝑉𝑡 )2 => Vov = 0.26 V (1 mark)
gm = 0.2/0.26 = 0.77 mS (1 mark)
1 1
Single-ended output, Ad = 2gmRD = 2
x 0.77m x 10 k = 3.85 V/V (1 mark)
|Acm| = RD/2RSS = 10k/2x100k = 0.05 V/V (1 mark)
CMRR = |Ad/Acm| = 77 = 37.7 dB (1 mark)

b) If the output is taken differentially and there is a 1% mismatch between the drain
resistances, find the differential gain, the common-mode gain and CMRR. (5 marks)
Solution:
output is taken differentially, Ad = gmRD = 0.77m x 10 k = 7.7 V/V (2 mark)
Δ𝑅𝐷
|Acm| = RD/2RSS� RD � = 10k/2x100k(0.01) = 0.5 mV/V (2 mark)
CMRR = |Ad/Acm| = 15400 = 83.7 dB (1 mark)

Bloom's Taxonomy Level (BTL): L1 – Remember, L2 – Understand, L3 – Apply, L4 – Analyze, L5 - Evaluate

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