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    Diffusion in VLSI

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    Diffusion in VLSI

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    12user123
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    Contains a full description. Read all other presentations in the "l*" series to get a full understanding of VLSI fab process. * indicates number

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    Contains a full description. Read all other presentations in the "l*" series to get a full understanding of VLSI fab process. * indicates number

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    3K views21 pages

    Diffusion in VLSI

    Uploaded by

    12user123
    Contains a full description. Read all other presentations in the "l*" series to get a full understanding of VLSI fab process. * indicates number

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
    of 21

    DIFFUSION

    Diffusion
    Why impurity doping:
    To change electrical properties.
    Methods:
    Ion implantation
    Diffusion
    Diffusion deep junction
    Ion implantation shallow junction
    Basic Process
    Ambient:
    Carefully controlled
    High temperature quartz tube furnace
    Gas mixture containing desired dopants.
    Temperature range: 800-1200
    0
    C
    P-type: boron n-type: phosphorous
    Uses liquid sources.
    Process:
    Cause: concentration gradient.
    Ambient: higher concentration
    Initially there are no impurities in the bulk
    crystal.
    Hence impurity atoms move inside
    crystal.
    Mechanism:
    Substitution
    Interstitial
    Interstitialcy

    Diffusion Mechanisms
    Vacancy model
    For substitutional
    impurities like P, B,
    As, Al, Ga

    Impurity atom
    exchanges position
    with a vacancy in the
    lattice

    Interstitial Diffusion

    For interstitial
    impurities like O, Au,
    Fe, Cu, Ni

    Rapid diffusion but
    impurities do not
    contribute to doping

    The two principal diffusion mechanisms:
    Schematic diagrams

    Vacancy diffusion
    in a semiconductor.

    Interstitial diffusion
    in a semiconductor.

    Diffusivity
    Intrinsic diffusivity is a function of
    temperature:
    D = D
    0
    exp(-E
    a
    /kT)
    Where Ea is the activation energy for
    the diffusion process
    Ficks Laws of Diffusion:
    1st Law: Flux of dopants is proportional to
    concentration gradient


    2nd Law: Rate of change of concentration is
    proportional to change of concentration gradient
    with depth
    Constant of proportionality is called diffusivity or
    diffusion constant which is dependent on
    temperature
    dx
    t x dC
    D J
    ) , (
    =
    Ficks 2
    nd
    law:
    Change in flux with position = rate of
    change of concentration at given
    point
    ) ( . .
    1 2
    J J A
    dt
    dC
    dx A =
    dx
    D d
    dx
    dJ
    dt
    dC
    dx
    dC
    ] [
    = =
    Depending on D, diffusion can be of 2
    types:
    Constant surface concentration-/constant
    source-/infinite source- diffusion.
    Constant total dose diffusion
    Case 1: D is constant
    Case 2: D depends on x (position).
    Infinite source diffusion
    Boundary condition:
    C (0, t) = Cs
    C ( , t) = 0

    Initial condition
    C (x, 0) = 0
    Solving for Ficks law (subjected to these
    conditions):
    ( )
    |
    |
    .
    |

    \
    |
    =
    t D
    x
    erf c C t x C
    s
    2
    ,
    Nature of the curve:
    Constant total dopant
    Limited Source:
    C (x, 0) = 0; x 0 (initial condition)
    C ( , t) = 0


    Solution:
    Called drive-in diffusion
    Solution is Gaussian
    Junction depth (X
    j
    )
    When concentration of impurity is equal to
    background doping concentration, that
    depth is junction depth
    Case 1: pre-deposition diffusion


    Case 2: drive-in diffusion


    |
    |
    .
    |

    \
    |
    =

    s
    B
    j
    C
    C
    erfc Dt x
    1
    . . 2
    ) ln( . . 4
    Dt C
    Q
    Dt x
    B
    T
    j
    t
    =
    Where C
    B
    is the
    background concentration
    Diffusion Process: Pre-deposition
    followed by Drive-in.
    Pre-deposition:

    Drive-in:

    Finally,
    At the mask edge
    Impurities will diffuse downwards and
    sideways.
    This is lateral diffusion.
    Ratio of lateral to vertical penetration:
    75% for constant total dopant.
    65-70% for concentration dependant.
    A comparison with Ion-
    Implantation:
    Advantages of implantation over
    diffusion;
    Lesser contamination.
    Better control over the process.
    Room temperature process.
    Better flexibility.
    Not governed by solid solubility or
    concentration gradient.
    Disadvantages of Implantation over
    diffusion:
    Expensive.
    Damage creation.
    Can be annealed out. But

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