Week 13 Quiz 2
Week 13 Quiz 2
Week 13 Quiz 2
Answer
the
four
multiple
choice
questions
below
by
choosing
the
one,
best
answer.
1) How
does
the
average
velocity
of
charge
carriers
vary
with
position
along
the
channel
of
a
modern
MOSFET
under
large
drain
to
source
voltage?
a)
The
average
velocity
is
constant
from
the
source
to
the
drain.
b)
The
average
velocity
increases
from
the
source
to
the
drain.
c)
The
average
velocity
decreases
from
the
source
to
the
drain.
d)
The
average
velocity
reaches
a
maximum
between
the
source
and
the
drain.
e)
The
average
velocity
reaches
a
minimum
between
the
source
and
the
drain.
2) How
does
the
average
velocity
of
charge
carriers
vary
with
position
along
the
channel
of
a
modern
MOSFET
under
small
drain
to
source
voltage?
a)
The
average
velocity
is
constant
from
the
source
to
the
drain.
b)
The
average
velocity
increases
from
the
source
to
the
drain.
c)
The
average
velocity
decreases
from
the
source
to
the
drain.
d)
The
average
velocity
reaches
a
maximum
between
the
source
and
the
drain.
e)
The
average
velocity
reaches
a
minimum
between
the
source
and
the
drain
3) If
we
measure
the
IV
characteristics
of
a
transistor,
what
is
the
signature
of
velocity
saturation
inside
the
MOSFET?
a)
The
drain
current
increases
as
(VGS VT ) .
1/2
b)
c)
d)
e)
4)
What
is
velocity
overshoot?
a)
A
channel
velocity
under
subthreshold
conditions
that
exceeds
nE y .
b)
A
channel
velocity
in
the
linear
region
that
exceeds
nE y .
c)
A
channel
velocity
in
the
saturation
region
that
exceeds
sat .
d)
A
channel
velocity
in
the
saturation
region
that
exceeds
the
ballistic
velocity.
e)
A
channel
velocity
in
the
saturation
region
conditions
that
exceeds
the
speed
of
light.
Turn
in
to
Ms.
Wanda
Dallinger,
EE-326
by
Friday,
April
15.