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    Course Handout F214

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    Aakarsh Shukla
    This document outlines the course details for Electronics Devices taught in the first semester of 2013-2014 at Birla Institute of Technology and Science Pilani – K K Birla Goa Campus. The course aims to provide an understanding of semiconductor devices such as diodes, field effect transistors, and bipolar junction transistors. It covers topics including semiconductor materials, quantum mechanics, electrical conduction in solids, charge carriers, excess carriers, p-n junctions, FETs, BJTs, optoelectronic devices, high power/frequency devices, and compound semiconductors. The course plan lists the topics, learning objectives, and reference materials. Student evaluation includes two tests, assignments, and a comprehensive exam.

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    Course Handout F214

    Uploaded by

    Aakarsh Shukla
    80 views2 pages
    This document outlines the course details for Electronics Devices taught in the first semester of 2013-2014 at Birla Institute of Technology and Science Pilani – K K Birla Goa Campus. The course aims to provide an understanding of semiconductor devices such as diodes, field effect transistors, and bipolar junction transistors. It covers topics including semiconductor materials, quantum mechanics, electrical conduction in solids, charge carriers, excess carriers, p-n junctions, FETs, BJTs, optoelectronic devices, high power/frequency devices, and compound semiconductors. The course plan lists the topics, learning objectives, and reference materials. Student evaluation includes two tests, assignments, and a comprehensive exam.

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    This document outlines the course details for Electronics Devices taught in the first semester of 2013-2014 at Birla Institute of Technology and Science Pilani – K K Birla Goa Campus. The course aims to provide an understanding of semiconductor devices such as diodes, field effect transistors, and bipolar junction transistors. It covers topics including semiconductor materials, quantum mechanics, electrical conduction in solids, charge carriers, excess carriers, p-n junctions, FETs, BJTs, optoelectronic devices, high power/frequency devices, and compound semiconductors. The course plan lists the topics, learning objectives, and reference materials. Student evaluation includes two tests, assignments, and a comprehensive exam.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    80 views2 pages

    Course Handout F214

    Uploaded by

    Aakarsh Shukla
    This document outlines the course details for Electronics Devices taught in the first semester of 2013-2014 at Birla Institute of Technology and Science Pilani – K K Birla Goa Campus. The course aims to provide an understanding of semiconductor devices such as diodes, field effect transistors, and bipolar junction transistors. It covers topics including semiconductor materials, quantum mechanics, electrical conduction in solids, charge carriers, excess carriers, p-n junctions, FETs, BJTs, optoelectronic devices, high power/frequency devices, and compound semiconductors. The course plan lists the topics, learning objectives, and reference materials. Student evaluation includes two tests, assignments, and a comprehensive exam.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    Birla Institute of Technology and Science Pilani K K Birla Goa Campus

    First Semester 2013 2014


    Course Handout
    Date: 02.08.2014
    Course No.: EEE F214 / INSTR F214
    Course Title: Electronics Devices
    Instructor-in-charge: Dr. Ramesha C K
    Instructors: Mr. Gavax Joshi
    1. Scope and objective
    This course aims to provide basic understanding of the structure, operation, characteristics and the limitations of
    the semiconductor devices. Comprehensive understanding of the devices fabricated with junctions between
    semiconductor to semiconductor, metal, and dielectrics, e. g., p-n junction diodes, Field Effect Transistor (FET)
    and Bipolar Junction Transistor (BJT), is discussed. Starting with the explanations of the fundamentals of
    semiconductors like energy band formation, conduction of charge carriers, electron and hole concepts, effect of
    electric and magnetic fields on charge carriers, the course helps in developing the understanding about excess
    carriers in semiconductors. In-depth study on junctions prepares the students for a detailed study on devices to
    be studied later like FET and BJT viz. commonly employed in integrated circuit technology for implementation of
    virtually any requirement. Concepts of semiconductor devices like microwave devices and power devices are also
    included.

    2. Text / Reference books
    (a) B.G. Streetman & Sanjay Banerjee, Solid State Electronic Devices,7
    th
    / 6
    th
    ed., Pearson Prentice Hall.
    (b) Donald A. Neamen, Semiconductor Physics and Devices, 3
    rd
    ed., Tata McGraw Hill Education Private
    Limited.
    (c) M. S. Tyagi, Introduction to Semiconductor Materials and Devices, Wiley India Limited.

    3. Course Plan
    Lect.
    No.
    Topic Learning objectives Book
    reference
    1-3 Semiconductor materials, crystal
    properties and growth of the
    semiconductor
    Understanding of Crystal lattices, Crystalline and
    Amorphous solids, Different techniques of crystal
    growing.
    SB 1.1 1.4,
    4-6 Elementary quantum mechanics The uncertainty principle, Schroedinger wave
    equation, step potential, potential well, and
    Tunneling.
    SB 2.4
    7-10 Electrical conduction in solids and
    statistical mechanics
    Periodic potential, allowed and forbidden energy
    bands, Density of states, Direct and indirect band
    gap semiconductors, effective mass. Statistical
    distributions, Fermi-Dirac distribution function,
    Fermi energy.
    SB 3.1 3.2
    10-11 Charge carriers in semiconductors,
    Effect of electric and magnetic
    fields on drift of carriers
    Fermi level, equilibrium carrier concentrations,
    mobility, Hall effect
    SB 3.3 3.5
    12-15 Excess carriers in semiconductors Luminescence, Einsteins relation, continuity
    equation, Haynes-Shockley experiment
    SB 4.1 4.4
    15-21 Junctions pn junction, IV characteristics, breakdown diodes,
    Schottky barriers, Ohmic contacts
    SB 5.2 5.5.4,
    5.6-5.7
    22-27 Field Effect Transistors Junction FET, MISFET, MOS capacitor, MOSFET SB 6.2 6.5
    28-33 Bipolar junction transistors BJT operations, amplification, carrier distribution, I-
    V characteristics etc
    SB 7.1,7.2, 7.4
    7.7.4, 7.7.6-
    7.8.3
    34-37 Optoelectronic Devices Photodiodes, solar cells, LEDs and Lasers,
    Semiconductor Lasers
    SB 8.1 8.4
    37-38 High frequency and high power
    devices
    Tunnels Diodes, IMPATT Diodes, GUNN Diodes,
    p-n-p-n Diode, SCR diode, IGBT
    SB 10.1 10.6
    38-40 Compound semiconductor devices Compound semiconductors; HBT and HEMT Lecture notes

    4. Evaluation Scheme

    5. Tutorials
    Assistance will be provided in solving the problems asked in tutorial sheets.

    6. Make-up Policy
    Make-up will be given only for Medical cases, requiring hospitalization.

    7. Chamber consultation hour
    To be announced in the class.



    Instruction Incharge
    EEE F214/INSTR F214
    EC
    No.
    Component Duration Marks

    Date
    1 Test I (Closed Book)
    Test II (Closed Book)
    60 min
    60 min
    40
    40
    13/09/2014; 4.005.00 pm
    18/10/2014; 4.005.00 pm
    2 Surprise Tests/
    Assignments
    20 ---------------------
    3 Comprehensive exam
    (Closed book)
    3 hours 100 1/12/2014; 9.00 am 12.00 noon

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