Electronic Devices 3: Course Information

Course information 1
ELECTRONIC DEVICES 3
Course code 0GAW

GU Credits 10
ECTS Credits 5
Prerequisite course(s) Electronic Devices 2 (3KFV)
Engineering Electromagnetics 2 (3KJV)
Teaching staff (the first has Dr K Kalna (telephone 6010; email K.Kalna)
overall responsibility) Dr A C Bryce - laboratories (telephone 4929; email A.Bryce)
Approximate size of class 45 students
Semester 1
Description of course
1. Basic properties of semiconductors

4 lectures and 1 tutorial
Aims
To establish the links between the crystal structure, the chemical composition and the
electronic and transport properties of semiconductors like Si, Ge and GaAs, which govern the
operation and the design of a broad range of electronics and optoelectronics devices including
diodes, bipolar and MOS transistors, photodiodes and lasers.
Objectives
Understanding
The difference between metals, semiconductors and insulators. Factors controlling the carrier
concentration and generation /recombination in semiconductors. Band diagrams for intrinsic
and doped semiconductors. Current flow in semiconductors, including drift and diffusion of
electrons and holes.
Knowledge
Appropriate mathematical equations from which physical quantities such as majority and
minor carrier concentrations, conductivity, mobility, diffusion coefficient and length and
current density may be calculated.
Skills
Use of appropriate mathematical equations to calculate the electrical properties of bulk
semiconductors.
Syllabus
Overview of conduction and valence bands in semiconductors. Carrier statistics, Fermi level
and its dependence on doping density. Drift and diffusion of carriers, carrier recombination
and generation, continuity equation, minority carrier lifetime and diffusion length, majority
and minority current flow. Photoconductivity.
2. Basic building blocks of semiconductor devices

4 lectures and 1 tutorial
Department of Electronics and Electrical Engineering

Aims
To establish the links between the electronic properties of bulk semiconductors and the
electrical behaviour of p-n junctions, MOS structures, Schottky barriers and Ohmic contacts as
basic building blocks of almost all semiconductor devices including diodes, bipolar and MOS
transistors, photodiodes and lasers.
Objectives
Understanding
Now the electronic properties of semiconductors of different type when combined together or
with metals and insulators result in the specific electrical behaviour and characteristics of the
corresponding p-n junctions, MOS structures, Schottky barriers and Ohmic contacts.
Knowledge
The generic current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p-n
junctions, MOS structures, Schottky barriers and Ohmic contacts with a reference to the
physical processes responsible for their specific behaviour. Appropriate mathematical
equations describing the I-V and C-V characteristics of the above structures.
Skills
Use of appropriate mathematical equations to calculate the I-V and C-V characteristics of p-n
junctions, MOS structures, Schottky barriers and Ohmic contacts.
Syllabus
Formation of p-n junctions; band structure, depletion layer, depletion width, junction field and
build in potential; forward and reverse bias conditions; reverse bias capacitance and
breakdown; injection and forward bias current; current voltage characteristics and the
Schottky equation. Field effect in MOS capacitor; band structure in accumulation, depletion
and inversion; C-V characteristics. Formation of Schottky barrier and current voltage
characteristics of a Schottky contact. The Ohmic contact as a specific implementation of a
Schottky contact.
3. MOS transistors
4 lectures and 1 tutorial.
Aims
To establish the links between the physical properties of p-n junctions and MOS structure
used as building blocks of a MOS transistor and the electrical behaviour and the current
voltage characteristics of the corresponding devices.
Objectives
Understanding
Origins of I-V characteristics of MOS transistors; mapping the device structure in simple
equivalent circuit models. MOS transistor scaling principles.
Knowledge
Appropriate mathematical equations from which MOS transistor characteristics in the linear
region of operation and in saturation could be calculated.
Skills
Use of appropriate mathematical equations to calculate the current voltage characteristics of
MOS Transistors and to design devices with required properties.

Syllabus
MOS transistor principle of operation. Band diagram. Current voltage characteristics, linear
region, pinch off, saturation, subthreshold. Short channel and high field effects. Scaling.
Equivalent circuit models.
3. Laboratory
Aims
To provide first hand experience within a clean room environment and different technology
processes and procedures involved in the fabrication of a semiconductor devices.
Objectives
Fabrication of a silicon p-n junction, including oxidation, impurity diffusion, photoresist
spinning, masking and photolithography, contacting; characterisation of the fabricated devices
measuring their I-V and C-V characteristics. Analysis of data.
Syllabus
Project running over 3 sessions to fabricate and characterise a p-n junctions.
4. Basics of semiconductor device fabrication

4 lectures and 1 tutorial.
Aims
To introduce the basic technology processes used in the fabrication of semiconductor devices
and integrates circuits and their integration in the widely adopted planar technology.
Objectives
Understanding
The physics and chemistry involved in the basis semiconductor fabrication processes
including lithography, diffusion, implantation oxidation and deposition of metal, dielectric and
semiconductor layers. Planar fabrication processes for silicon MOS transistors and CMOS
circuits.
Knowledge
The typical equipment used in lithography, diffusion, implantation oxidation and deposition of
metal, dielectric and semiconductor layers. Appropriate mathematical equations which
describe the resulting doping profiles and layer thicknesses. The sequence of technological
steps involved in the fabrication of MOS transistors and CMOS integrated circuits.
Skills
Use of appropriate mathematical equations to calculate the doping distributions, junction
depths and layer thicknesses resulting from the above fabrication processes.
Syllabus
Lithography, photoresist, resolution, image formation, etching. Ion implantation, projection
range and standard deviation, Gaussian distribution of dopants. Diffusion, diffusion
coefficients, predeposition and drive in. Oxidation in dry and wet oxygen.

Recommended books
Authors Title, edition Publisher Year ISBN Cost Code

B G Streetman1 Solid State Electronic Printice 1995 0134363795 £23 B
Devices Hall
Edward S Yang Microelectronic McGraw 1988 0071003746 £16 C
Devices Hill
S M Sze Semiconductor Wiley 1985 0471837040 £20 B
Devices - Physics and
Technology
G S May and S Fundamentals of Wiley 2004 0471452386 £30 C
M Sze Semiconductor
Fabrication
Codes : A = compulsory; B = strongly recommended; C = recommended; D = wider reading
Remarks: 1) Or a later edition with S. Banerjee (£ 38)
2
) Or a later edition with Kwok K. Ng (£ 44)
Study times
Type Hours
Lectures and tutorials 20
Laboratories and laboratory reports 15
Tutorial sheets 15
Review and consolidation of course material 40
Final revision and examination 15
These times are a rough estimate of the work required by a typical student. There will be
variations between individuals, but you will run the risk of failure if you spend significantly
less time on this course than these guidelines suggest.
Assessment
% Type Details
20 Laboratory work Laboratory day book and report.
80 Degree examination 2 hour paper; Section A, 4 short compulsory
questions; Section B, 2 questions from 3.
The degree examinations are held in weeks 13 to 14; a resit is available in August/September.

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Course information 1

Course code 0GAW

1. Basic properties of semiconductors

2. Basic building blocks of semiconductor devices

Department of Electronics and Electrical Engineering

Department of Electronics and Electrical Engineering

4. Basics of semiconductor device fabrication

Department of Electronics and Electrical Engineering

Authors Title, edition Publisher Year ISBN Cost Code

Department of Electronics and Electrical Engineering

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