Elements of Electronics Engineering

Elements of Electronics Engineering
Teaching Scheme Examination Scheme

Lectures: 2 hrs/week T1: 20 marks
T2: 20 marks
End Sem Exam: 60 marks
Course Outcomes
1. Illustrate the band theory of solids and the carrier concentration in solids.
2. Articulate and estimate the charge distribution and charge transfer process in semiconductors.
3. Analyze the characteristics of PN junction diode and junction transistor.
4. Exemplify the applications of diode.
5. Design logic expressions using gates.
Introduction to Semiconductors (8 hrs.)

Classification of Solids, intrinsic and extrinsic semiconductors, equilibrium carrier concentration, Mass
action law, Fermi-Dirac probability function, Temperature dependence of carrier concentration, direct
and indirect band-gap semiconductors, Carrier Transport: diffusion current, drift current, mobility and
resistivity, generation and recombination of carriers, Poisson and continuity equations, Diffusion length
and mean life time, Tunneling process.
Semiconductor Diodes (6 hrs.)

Formation of p-n junctions, position of Fermi level in equilibrium, V-I characteristics in forward and
reverse bias, Capacitances in p-n junction diode, Zener diode, Design of voltage regulator using Zener
diode, Applications of special purpose diodes viz. PIN diode, Schottky diode, Gunn diode, LED, Laser
Diode, photo diode, Tunnel diode, and solar cell, Diode Circuits: clipping, clamping, voltage multiplier
and rectifiers.
Junction Transistors (6 hrs.)

Structure of NPN and PNP Transistors, BJT Configurations, Operation of BJT, Input and Output
characteristics, Introduction to MOSFET – Construction and Operation of n-MOS and p-MOS, Drain and
Transfer characteristics, Application as a switch.
Fundamentals of Digital Electronics (6 hrs.)

Difference between analog & digital signals, Basics of Boolean algebra, logic Gates: Symbols, Truth
tables, Boolean Expressions; Boolean Laws, Standard representation for logic functions(SOP and POS
forms), Minimisation of logic expressions using Boolean Laws and K-map, Number Systems: Binary,
octal, decimal, hexadecimal; Introduction to Combinational logic design: Adder/Subtractor,
Multiplexers/de-multiplexers; Introduction to Sequential Circuits: Flip-Flops using NAND gates S-R flip
flop, clocked S-R flip flop, J-K flip flop.
Text Books
1. Millman & Halkies, “Electronic Device and Circuits”, 4th edition, Tata McGraw Hill.
2. R.P.Jain, “Modern Digital Electronics”, 4th edition, Tata McGraw Hill.
Reference Books
1. Millman Halkies, “Integrated Electronics”, Tata McGraw Hill.

2. Boylestead & Nashelsky, “Electronic devices and Circuits Theory”, 8th edition, PHI
3. Streetman, Ben G., and Sanjay Banerjee. “Solid state electronic devices”, 6th edition. New Jersey:
Prentice hall.
4. M Morris Mano, “Digital Design”, 4th edition, Pearson.
Elements of Electronics Engineering Laboratory
Teaching Scheme Examination Scheme

Practical: 2 hrs/week Term work: 50 marks
Exam-Oral: 50 marks
Course Outcomes:
1. Design basic circuits using diodes
2. Identify and characterize basic devices such as BJT and FET from their package information
by referring to manufacturers' data sheets.
3. Design, simulate, built and debug simple combinational circuits using gates
List of Experiments:
1. Introduction to various electrical passive components such as Resistors, inductors and
capacitors, introduction to active components, introduction to breadboard, Measurement
of resistance using the colour code, series and parallel connection of the resistances and its
implementation on breadboard. Exposure to usual electronic equipment/instruments such
as Multi-meter, Oscilloscope, Function generator, Power supply.
2. To Design clipping circuits - Single ended clipping, Double ended clipping, and clamping
circuits.
3. To observe the effect of Variation of Frequency and Load Regulation for Voltage Multiplier.
4. To observe the output voltage of a half wave rectifier and center tapped full wave rectifier
with and without capacitor filter. Calculate Vdc and Idc.
5. To observe Input and Output Characteristics of BJT in CE configuration and Find h
parameters from characteristics.
6. To observe Transfer and Drain Characteristics of MOSFET and Find gm, rd and µ from
characteristics.
7. To simplify and implement a Boolean function using k -map technique e.g. code converter
8. To design and implement logic using Multiplexers and Demultiplexer.

Elements of Electronics Engineering - Syllabus

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Elements of Electronics Engineering - Syllabus

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Teaching Scheme Examination Scheme

Introduction to Semiconductors (8 hrs.)

Semiconductor Diodes (6 hrs.)

Junction Transistors (6 hrs.)

Fundamentals of Digital Electronics (6 hrs.)

1. Millman Halkies, “Integrated Electronics”, Tata McGraw Hill.

Elements of Electronics Engineering Laboratory

Teaching Scheme Examination Scheme

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