NE3503M04

HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3503M04
C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
Super low noise figure and high associated gain
<R>
NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz

Flat-lead 4-pin thin-type super minimold (M04) package
Gate width: W g = 160 m
APPLICATIONS
DBS LNB gain-stage, Mix-stage
Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3503M04
Order Number
NE3503M04-A
NE3503M04-T2
NE3503M04-T2-A
Package
Quantity
Marking
Flat-lead 4-pin thin-
50 pcs (Non reel)
V75
type super minimold
8 mm wide embossed taping

Pin 1 (Source), Pin 2 (Drain) face
3 kpcs/reel
(M04) (Pb-Free)
NE3503M04-T2B
Supplying Form
the perforation side of the tape
NE3503M04-T2B-A
15 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3503M04-A
ABSOLUTE MAXIMUM RATINGS (T A = +25C)

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage
VGS
3.0
Drain Current
ID
IDSS
mA
Gate Current
IG
80
Total Power Dissipation
Ptot
125
mW
Channel Temperature
Tch
+125
Storage Temperature
Tstg
65 to +125
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PG10456EJ03V0DS (3rd edition)

Date Published January 2009 NS
The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NE3503M04
RECOMMENDED OPERATING CONDITIONS (T A = +25C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
VDS
<R>
Drain to Source Voltage
<R>
Drain Current
ID
10
15
mA
Input Power
Pin
dBm
ELECTRICAL CHARACTERISTICS (T A = +25C, unless otherwise specified)

Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS = 3.0 V
0.5
10
<R>
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
25
40
70
mA
<R>
Gate to Source Cutoff Voltage
VGS (off)
VDS = 2 V, ID = 100 A
0.2
0.7
1.5
Transconductance
gm
VDS = 2 V, ID = 10 mA
40
55
mS
<R>
Noise Figure
NF
VDS = 2 V, ID = 10 mA, f = 12 GHz
0.45
0.65
dB
<R>
Associated Gain
Ga
11.0
12.0
dB
Data Sheet PG10456EJ03V0DS
NE3503M04
TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.

NE3503M04
S-PARAMETERS
NE3503M04
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
NE3503M04
MOUNTING PAD DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
Reference 1
Reference 2
NE3503M04
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Partial Heating
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220C or higher
: 60 seconds or less
Preheating time at 120 to 180C
: 12030 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
: 350C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
IR260
HS350
Caution Do not use different soldering methods together (except for partial heating).
NE3503M04
Caution GaAs Products
This product uses gallium arsenide (GaAs).

GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the
following points.
Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
Do not burn, destroy, cut, crush, or chemically dissolve the product.
Do not lick the product or in any way allow it to enter the mouth.

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HETERO JUNCTION FIELD EFFECT TRANSISTOR

NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz

Flat-lead 4-pin thin-

50 pcs (Non reel)

type super minimold

8 mm wide embossed taping

the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

ABSOLUTE MAXIMUM RATINGS (T A = +25C)

Drain to Source Voltage

Gate to Source Voltage

Total Power Dissipation

Document No. PG10456EJ03V0DS (3rd edition)

The mark <R> shows major revised points.

Drain to Source Voltage

ELECTRICAL CHARACTERISTICS (T A = +25C, unless otherwise specified)

Gate to Source Leak Current

Saturated Drain Current

Gate to Source Cutoff Voltage

VDS = 2 V, ID = 10 mA, f = 12 GHz

Data Sheet PG10456EJ03V0DS

Remark The graphs indicate nominal characteristics.

Data Sheet PG10456EJ03V0DS

Data Sheet PG10456EJ03V0DS

Data Sheet PG10456EJ03V0DS

Peak temperature (package surface temperature)

Time at peak temperature

Time at temperature of 220C or higher

Preheating time at 120 to 180C

Maximum number of reflow processes

Maximum chlorine content of rosin flux (% mass)

Peak temperature (pin temperature)

Soldering time (per side of device)

Maximum chlorine content of rosin flux (% mass)

Data Sheet PG10456EJ03V0DS

This product uses gallium arsenide (GaAs).

Data Sheet PG10456EJ03V0DS

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