CarrierConcentration 0822 PDF
CarrierConcentration 0822 PDF
CarrierConcentration 0822 PDF
Concentrations
Carrier Properties
Two-dimensional representation of an
Individual Si atom.
Elemental semiconductors
Valence III IV V
B C
Al Si P
Ga Ge As
Represents each valence electron
Semiconductors
dv dv
F = qE = m * F = qE = m *
p
dt
n
dt
Material mn* / m0 m*p / m0
Si 1.18 0.81
Ge 0.55 0.36
GaAs 0.066 0.52
Contains an insignificant
concentration of impurity atoms
Density of States
Fermi Function
Dopant States
Density of States:
Number of
cm 3
States
/ eV
mn* 2mn* ( E Ec )
gc (E) = , E Ec
2 3
g c ( Ec ) = g v ( Ev ) = 0
Fermi Function (I)
How many of the states at the energy E will be filled
with an electron
1
f ( E) =
1 + e ( E EF ) / kT
f(E), under equilibrium conditions, the probability that an
available state at an energy E will be occupied by an
electron
If E EF + 3k BT ,
f ( E ) exp[( EF E ) / k BT ]
If E E F 3k BT ,
f ( E ) 1 exp[( E EF ) / k BT ]
n-type: more
electrons than
Holes
Intrinsic:
Equal number
of electrons
and holes
p-type: more
holes than
electrons
Equilibrium Carrier Concentration
Nc = 2 n
2
, Nv = 2
E Ec E F Ec
h h2
Letting = and c =
kT kT
when E = Ec , =0
Let ETop 2
n Nc F1 / 2 ( c )
* * 3/ 2
m 2m ( kT ) E 1/ 2
n= n n
d 2
2 3 E0 1+ e ( c )
p Nv F1 / 2 ( v )
F1 / 2 ( c )
Degenerate vs. Non-degenerate
Semiconductor
1
If E F < E c 3k B T , f ( E ) = ( c )
e ( c )
1+ e
F1/ 2 ( c ) = e ( EF Ec ) / kT
2
n = N c e ( E F Ec ) / k B T , p = N v e ( E v E F ) / k B T
If E F > Ev + 3k BT , F1/ 2 ( v ) = e ( Ev EF ) / kT
2
Alternative Expressions for n and p
n0 = N c e ( E F Ec ) / k B T
p0 = N v e ( E v E F ) / k B T
When n=ni, EF = Ei, then
ni = N c e( Ei Ec ) / kBT = N v e( Ev Ei ) / k BT
( E c Ei ) / k B T ( Ei E v ) / k B T
N c = ni e , N v = ni e
( Ec Ei + EF Ec ) / kBT ( EF Ei ) / kBT
n0 = nie = ni e
p0 = ni e ( Ei Ev + Ev EF ) / k BT = ni e ( Ei EF ) / k BT
2
n0 p0 = ni
ni and the np Product
( Ei Ec ) / k BT ( E v Ei ) / k BT
ni = N c e = N ve
( Ec Ev ) / k B T E g / k BT
n = Nc Nve
2
i = Nc Nve
E g / 2 k BT
ni = N c N v e
Charge Neutrality Relationship
+
qp qn qN + qN = 0 A D
( p N A ) + ( N D n) = 0
ni2
( N A ) + ( N D n) = 0
n
n 2 n( N D N A ) ni2 = 0
2 1/ 2 2 1/ 2
ND N A ND N A N A ND N A ND
n= + + ni2 ,p= + + ni2
2 2 2 2
2
np = n i
+
Relationship for N and N D A
NA ND
N A = ( E A E F ) / kT
, N D+ = ( E F E D ) / kT
1+ g A 1+ gD
N c e ( Ei E c ) / k B T = N v e ( E v Ei ) / k B T
Ec + Ev k BT N
Ei = + ln v
2 2 Nc
3/ 2 1/ 2
2m kT * 3/ 2
2m kT *
Nv m *p
Nc = 2 n
, Nv = 2 p
=
h 2
h 2
Nc mn*
Ec + Ev 3k BT m*p
Ei = + ln *
2 4 mn
Determination of EF (Extrinsic Material)
( E F Ei ) / k B T ( Ei E F ) / k B T
n = ni e , p = ni e
n p
E F Ei = kT ln = kT ln
ni ni
N NA
E F Ei = kT ln D E F Ei = kT ln
ni ni
Determination of EF (Extrinsic Material)
Carrier Concentration 2D
Charge Neutrality
Density of States 3D vs. 2D
3D
m 2mE
g (E) = Energy Dependent
2 3
2D m
g= Energy Independent
2 3
LZ
Carrier Concentration 2D
Etop
n= g c ( E ) f ( E ) dE
Ec
mn* kT
n= 2 3
Lz
[
ln 1 + e ( EFC Ei ) / kT ]
i
m*p kT
p=
2 3
Lz
[
ln 1 + e ( E FV Ei ) / kT
]
i
Charge Neutrality
Phh + Plh = N + N + N L
References
Robert F. Pierret, Semiconductor Fundamentals
(VOLUME I), Addison-Wesley Publishing Company,
1988, chapter 2
m*p 2m*p ( Ev E )
gv (E) =
2 3
*
mhh *
2mhh ( Ev E) mlh* 2mlh* ( Ev E)
= +
2 3
2 3
(m *p ) 3 / 2 = (mhh ) + (mlh* ) 3 / 2
* 3/ 2
m = (m )
*
p [ * 3/ 2
hh + (m )lh ]
* 3/ 2 2 / 3