Design and Analysis of 16bit Ripple Carry Adder and Carry Skip Adder Using Graphene Nano Ribbon Field Effect Transistor (GNRFET)
Design and Analysis of 16bit Ripple Carry Adder and Carry Skip Adder Using Graphene Nano Ribbon Field Effect Transistor (GNRFET)
Design and Analysis of 16bit Ripple Carry Adder and Carry Skip Adder Using Graphene Nano Ribbon Field Effect Transistor (GNRFET)
Abstract: Moores Law Cannot Be Sustained Since Furthermore, the concern is not only about the inability of the
MOSFETs Cannot Be Scaled Below 10nm Due To Its devices itself to continue operate steadily but also the
Physical Properties .This Trade-Off Paves A Way For New constraints from the economic and technology point of view.
Material Used In Fetes To Sustain Moores Law, Various With the increasing level of device integration and the growth
Other Technologies Include Fin-Shaped FET (Finfet), in complexity of microelectronic circuits, power dissipation,
Carbon Nano-Tube FET (CNTFET), Reversible Logic, delay and area has come the primary design goal.
Reconfigurable Logic And Grapheme Nano-Ribbon FET
(GNRFET), Among The Available Alternatives II. GRAPHENE
GNRFETs Has Proven To Be A Promising Potential
Replacement In Terms Of Design Area, Lower Power Graphene has been a purely theoretical form of carbon for
Consumption And Faster Operation. Carbon Is An decades. It wasnt until the year 2004 that Andre Geim and
Interesting Element Because Even If Some Material Is Konstantin Novoselov managed to produce Graphene akes
Made Up Of Carbon Atoms, It Can Have Various with a technique called mechanical exfoliation. Geim and
Morphologies And Characteristics Depending On How Novoselov were awarded the Nobel Prize in Physics in 2010
Carbon Atoms Bind Together. Designing Of RCA And for their discovery of Graphene. It is, therefore, easy to claim
Cska Adders Using GNRFET. that 2010 has been the year of Graphene. In 2010, around
3000 Graphene related articles were published and roughly
I. INTRODUCTION 400 patent applications led.
Integrated circuits have transformed the environment in which According to a recent news article in Nature, South-Korea is
we live. The shrinking size of the transistors that result in planning to put 300 million US dollars in commercializing
smaller, faster and cheaper systems have enabled tremendous Graphene. New Graphene related discoveries are in
use of these chips. It is being evaluated that there are more nanotechnology news almost every other day. Keeping up
than 15 billion silicon based chips currently in use. This with the pace of progress in the Grapheme research eld is
number many reach a trillion in couple of years from now. getting quite exhausting, and the pace of new discoveries
shows only slight saturation.
CMOS (Complementary metal-oxide semiconductor) is the
semiconductor technology used to produce integrated circuit
chips. In the year 1965, Gordon Moore (INTEL Co-founder)
predicted that the number of transistors per square inch in an
Integrated Circuit doubles every 18 months. This refers to the
continued scaling both horizontally and vertically features the
size of silicon based CMOS transistor. This effort has helped
in producing inventory technologies of electronic devices.
going from one layer to several. It should be noted that Graphene is a 2D material, but distinctions can be made
multilayer Graphene can have up to ten layers, and still be between bi-layer Graphene and few-layer Graphene (FLG).
called Grapheme. Bilayer Graphene has two layers, but the electronic band
structure is already quite different from single layer Graphene.
Band gaps of some hundreds of mill electron volts have been
achieved with bilayer Graphene by applying a perpendicular
electric eld to the belayed. The gap in Bernal stacked belayed
Graphene arises from the forming of pseudo spins between the
layers, thus making it possible to electrically induce a Band
gap.
There are still many properties of Graphene that have not been
Fig 2: Hexagonal structure of Carbon thoroughly investigated. Even the existence of a band gap in
large area Graphene is controversial. In addition to band gap
The atomic structure of Graphene gives rise to exceptional opening in bilayer Graphene by applying an electric eld, it is
electrical, optical, mechanical and thermal properties. The possible to create band gap by quantum connement, i.e. by
most interesting electrical properties are high electron mobility fabricating Graphene Nano ribbons. Edges may have
and ballistic transport of charge carriers. However, these signicant inuence on electrical properties, especially with
properties come with a twist; Graphene is zero-band gap GNRs.
semiconductor, or semimetal. The lack of band gap in intrinsic
Graphene is perhaps, together with large scale manufacturing, B. Gnrfet
the most difcult engineering issue. The zero-band gap means
that Graphene cannot be switched from conductive state to In one GNRFET, multiple ribbons are connected in parallel to
non-conductive state. increase drive strength and to form wide, conducting contacts.
Two-dimensional Graphene is a semi-metal without a band-
The lack of a band gap is a problem, if Graphene is to be used gap. A band-gap can be obtained by using a narrow Graphene
in logic circuits in much the same way as silicon is used today Nano ribbon (GNR) which show distinct electronic properties
as the material in complementary metal-oxide semiconductor and can be classified as either A-GNRs or Z-GNRs (armchair
logic circuits. Nonetheless, the zero band gap of large area and zigzag Graphene Nano ribbons. A-GNRs are either
Graphene is not an issue in all applications. semiconducting or metallic depending on their width,
however, Z-GNRs are found to be metallic for all the widths.
A. Electronic Band Structure
Graphene Nano Ribbons (GNRs) are one-dimensional (1D) Carry Look Ahead Adder (CLA)
nanostructures restricting carrier motion in only one direction, Carry Select Adder (CSlA)
reducing scattering for enhanced mobility. The transistor Carry Bypass Adder (CBA)
current is quite high as electrons are injected from the source
and transit to the drain terminal. A narrow width The advancement in IC technology is primarily attributed to
semiconducting GNR is utilized as a channel in a top-gated the MOSFET scaling theory. As the transistor size reduced,
transistor. This pushes the limits of complementary metal- power consumption also reduced. As the process technology
oxide semiconductor (CMOS) type of technology beyond its reached nano-meter regime, silicon CMOS started developing
limits in a GNR. Short Channel Effects which led to increased power
dissipation. A trade-off arose between power-dissipation and
The GNRFET device structure is very similar to MOSFET and area. Alternatives to CMOS were found to avoid the trade-off.
is shown in figure 5 above. The 2D Graphene sheets are Graphene based transistor proved to be a potential
patterned to 1D ribbons to induce necessary band-gap. These replacement to CMOS.
1D ribbons are called Graphene Nano Ribbon (GNR) and are
semiconducting in nature owing to the fact that the band gap is The Arithmetic and Logic Unit is the basic computing unit of
inversely related to the ribbon width. all microprocessors or microcontrollers. The parallel adder
forms the critical path in the ALU. The proposed work designs
GNRFET based 16bit RCA and CSkA architectures. The
Graphene Nano Ribbon architecture contains 28TFA The Adders are implemented first
with 4 blocks of 1bit full adder to get the 16bit structure.