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C5386

The document provides specifications for the KSC5386 silicon NPN power transistor from INCHANGE Semiconductor. It is designed for use in high definition color display horizontal deflection output applications. Key specifications include a collector-base voltage up to 1500V, high switching speed, and a built-in damper diode. It also lists the transistor's absolute maximum ratings and electrical characteristics.

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Iader Salgado
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1K views2 pages

C5386

The document provides specifications for the KSC5386 silicon NPN power transistor from INCHANGE Semiconductor. It is designed for use in high definition color display horizontal deflection output applications. Key specifications include a collector-base voltage up to 1500V, high switching speed, and a built-in damper diode. It also lists the transistor's absolute maximum ratings and electrical characteristics.

Uploaded by

Iader Salgado
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
Download as pdf or txt
Download as pdf or txt
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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor KSC5386

DESCRIPTION
·High Collector-Base Voltage-
: VCBO = 1500V(Min)
·High Switching Speed
·Built-in Damper Diode

APPLICATIONS
·Designed for use in high definition color display
horizontal deflection output application.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 1500 V

VCEO Collector-Emitter Voltage 800 V

VEBO Emitter-Base Voltage 6 V

IC Collector Current-Continuous 7 A

ICM Collector Current-Peak 16 A

Collector Power Dissipation


PC 50 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor KSC5386

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 4 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A


B 5.0 V

VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A


B 1.5 V

ICES Collector Cutoff Current VCE= 1400V; RBE= 0 1 mA

ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA

IEBO Emitter Cutoff Current VEB= 4V; IC=0 40 250 mA

hFE DC Current Gain IC= 1A; VCE= 5V 8

VECF C-E Diode Forward Voltage IF= 6A 2.0 V

IC= 4A; IB1= 0.8A; IB2= -1.6A;


tf Fall Time 0.2 μs
VCC= 200V

isc Website：www.iscsemi.cn 2

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