Electronic Devices Used in Power Electronics Characteristics Comparison
Electronic Devices Used in Power Electronics Characteristics Comparison
Electronic Devices Used in Power Electronics Characteristics Comparison
List all electronic devices (names and abbreviations) used in power electronics and
Compare their following characteristics:
a. Voltage (forward and reverse)
b. Current
c. Power
d. ‘On’ Resistance
e. Frequency
f. Turn ‘On’ and turn ‘Off’ delays
g. Any other important parameters
Transistors:
Transistors are operated as switches in power electronics circuits. Transistor drive circuits are
designed to have the transistor either in the fully on or fully off state. Unlike the diode, turn-on
and turnoff of a transistor are controllable. Types of transistors used in power electronics circuits
include MOSFETs, bipolar junction transistors (BJTs), and hybrid devices such as insulated-gate
bipolar junction transistors (IGBTs).
MOSFET:
The MOSFET is a voltage-controlled device. Power MOSFETs are of the enhancement type
rather than the depletion type. A sufficiently large gate-to-source voltage will turn the device on,
resulting in a small drain-to-source voltage. In the on state, the change in vDS is linearly
proportional to the change in iD. Therefore, the on MOSFET can be modeled as an on-state
resistance called RDS(on). MOSFETs have on-state resistances as low as a few milliohms.
Ratings are to 1500 V and more than 600 A(although not simultaneously). MOSFET switching
speeds are greater than those of BJTs and are used in converters operating into the megahertz
range.
BJT:
Typical BJT characteristics are shown in Fig below. The on state for the transistor is achieved
by providing sufficient base current to drive the BJT into saturation. The collector-emitter
saturation voltage is typically 1 to 2 V for a power BJT. The BJT is a current controlled device,
and power BJTs typically have low hFE values, sometimes lower than 20.. Power BJTs are
rarely used in new applications, being surpassed by MOSFETs and IGBTs. The IGBT is an
integrated connection of a MOSFET and a BJT. The drive circuit for the IGBT is like that of the
MOSFET, while the on-state characteristics are like those of the BJT. IGBTs have replaced BJTs
in many applications.
Applications of Power Devices
References: