Examination of Power Electronics (Pel) : Answer
Examination of Power Electronics (Pel) : Answer
Examination of Power Electronics (Pel) : Answer
ANSWER:
(b) The forward voltage at which the current through the junction starts increasing
rapidly, is called the knee voltage or cut-in voltage. A Silicon diode has higher
forward voltage potential (0.7V) than Germanium diode (0.3V).
2. Classify the semi conductor devices based on gate signal requirements. /5marks
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(a) Controllable devices: These devices are turned-on and –off by the application of
control signal. The devices which behave as controllable switches are BJT,
MOSFET, GTO, SITH, SIT and MCT.
(b) Uncontrollable power semiconductor devices: These are uncontrolled rectifying
devices. Their on and off states are controlled by power supply.
4. List semiconductors which can withstand (i) unipolar voltages and (ii) bipolar
voltages. /5marks
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Ideal Characteristics
Primary Attributes
1. Switching times of the state transitions between ‘‘on’’ and ‘‘off’’ should be zero.
2. ‘‘On’’ state voltage drop across the device should be zero.
3. ‘‘Off’’ state current through the device should be zero.
4. Power–control ratio (i.e., the ratio of device power handling capability to the
control electrode power required to effect the state transitions) should be infinite.
5. ‘‘Off’’ state voltage withstand capability should be infinite.
6. ‘‘On’’ state current handling capability should be infinite.
7. Power handling capability of the switch should be infinite.
Secondary Attributes
1. Complete electrical isolation between the control function and the power flow
2. Bidirectional current and voltage blocking capability
8. (a) What do you understand by Uni-junction transistor (UJT)? (b) Draw the V-I
characteristics of UJT. /5marks
ANSWER:
- Base 1
- Base2
- Emitter
(b)
9. (a) Give the types of MOSFETs. (b) What are the similarities between IGBT and MOSFET.
/5marks
ANSWER:
(a)
(b)
Operating voltage
Blocking voltage
Since most power modules are used in DC voltage links which are AC-voltage supplied via
single-phase or three-phase rectifier bridges, the blocking voltages of IGBT and MOSFET
modules are adjusted to common line voltage levels for general-purpose use (600 V, 1200 V,
1700 V).
Switching frequency
Switching times of MOSFET and IGBT power modules are within the range of some ns to
some 100 ns.
Stress conditions of freewheeling diodes in rectifier and inverter mode
Most available IGBT and MOSFET modules with integrated freewheeling diodes are
dimensioned for use in inverters in reference to the power losses that can be dissipated at
rated current (e.g. cos φ = 0.6...1).
On-state current
There is no stationary or dynamic operating condition (with the exception of short-circuit
turn-off which may only be repeated to a limited extent) where the maximum rated chip
temperature of IGBTs, diodes, or MOSFETs may be exceeded.
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12.
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13.
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14. Itemize (ten) 10 differences between transistor and thyristor.
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17.An SCR half-wave rectifier has a forward breakdown voltage of 150V when a gate current of
1mA flows in the gate circuit. If a sinusoidal voltage of 400V peak is applied, find:
(i) firing angle
(ii) average output voltage
(iii) average current for a load resistance of 200Ω
(iv) Power output.
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