Uni Junction Transistor: Working Principle of UJT
Uni Junction Transistor: Working Principle of UJT
Uni Junction Transistor: Working Principle of UJT
A Uni Junction Transistor (UJT) is a device that is formed with a single junction of p-type and the n-type of the semiconductor
material. It resembles to that of the diode with a single junction of the P-N. It looks almost like that of the Junction Field Effect
Transistor (JFET). But the operation is completely different in comparison with it. A transistor that is formed because of the P-
type and the N-type material so that a single junction is formed because of them this type of transistor is defined as uni
junction transistor. These transistors are similar to that of JFET’s but their operations completely differ. Hence this transistor
doesn’t suits for amplification techniques. This can be utilized during the switching of the devices to ON/OFF.
The basic functionality of the UJT depends on the value of the voltage applied. If the voltage applied in between the terminals
of the emitter and the base1 are supposed to be zero this UJT doesn’t conduct. Hence the N-Type material tends to acts as a
resistor. As the applied voltage tends to increase at the terminal of emitter the value of resistance tends to increase and the
device begin to conduct. In the whole process the conduction is completely dependent on the majority of the charge carriers.
This is the basic principle involved in UJT.
UJT Symbol
UJT Characteristics
The Bipolar Transistor basic construction consists of two PN-junctions producing three connecting
terminals with each terminal being given a name to identify it from the other two. These three terminals are
known and labelled as the Emitter ( E ), the Base ( B ) and the Collector ( C ) respectively.
The Bipolar Transistor basic construction consists of two PN-junctions producing three connecting
terminals with each terminal being given a name to identify it from the other two. These three terminals are
known and labelled as the Emitter ( E ), the Base ( B ) and the Collector ( C ) respectively.
Figure 2 below shows the input characteristics of a CB configuration circuit which describes the variation of
emitter current, IE with Base-Emitter voltage, VBE keeping Collector-Base voltage, VCB constant.
This characteristic of CC configuration (Figure 8) shows the variation of IE with IB keeping VCE as a constant.