SDD100

Diode-Diode Modules

Dimensions in mm (1mm=0.0394")
Type VRSM VRRM
V V
SDD100N08 900 800
SDD100N12 1300 1200
SDD100N14 1500 1400
SDD100N16 1700 1600
SDD100N18 1900 1800

Symbol Test Conditions Maximum Ratings Unit

IFRMS TVJ=TVJM 180
A
IFAVM TC=100oC; 180o sine 100
TVJ=45oC t=10ms (50Hz), sine 1700
VR=0 t=8.3ms (60Hz), sine 1950
IFSM A
TVJ=TVJM t=10ms(50Hz), sine 1540
VR=0 t=8.3ms(60Hz), sine 1800
TVJ=45oC t=10ms (50Hz), sine 14450
VR=0 t=8.3ms (60Hz), sine 15700
i2dt A2s
TVJ=TVJM t=10ms(50Hz), sine 11850
VR=0 t=8.3ms(60Hz), sine 13400
TVJ -40...+150
o
TVJM 150 C
Tstg -40...+125
50/60Hz, RMS t=1min 3000
VISOL _ V~
IISOL<1mA t=1s 3600
Mounting torque (M5) 2.5-4/22-35
Md Nm/lb.in.
Terminal connection torque (M5) 2.5-4/22-35
Weight Typical including screws 90 g
 SDD100
Diode-Diode Modules

Symbol Test Conditions Characteristic Values Unit

IR TVJ=TVJM; VR=VRRM 15 mA
o
VF IF=300A; TVJ=25 C 1.6 V
VTO For power-loss calculations only 0.8 V
rT TVJ=TVJM 2.3 m
o
QS TVJ=125 C; IF=50A; -di/dt=3A/us 170 uC
IRM 45 A
per diode; DC current 0.35
RthJC K/W
per module 0.175
per diode; DC current 0.55
RthJK K/W
per module 0.275
dS Creepage distance on surface 12.7 mm
dA Strike distance through air 9.6 mm
a Maximum allowable acceleration 50 m/s2

FEATURES APPLICATIONS ADVANTAGES

* International standard package * Supplies for DC power equipment * Space and weight savings
* Copper base plate * DC supply for PWM inverter * Simple mounting
* Planar passivated chips * Field supply for DC motors * Improved temperature and power
* Isolation voltage 3600 V~ * Battery DC power supplies cycling
* Reduced protection circuits
 SDD100
Diode-Diode Modules

Fig. 1 Surge overload current Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current
IFSM: Crest value, t: duration at case temperature

Fig. 3 Power dissipation versus

forward current and ambient
temperature (per diode)

Fig. 4 Single phase rectifier bridge:

Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load

2 x SDD100
 SDD100
Diode-Diode Modules

Fig. 5 Three phase rectifier bridge:

Power dissipation versus direct
output current and ambient
temperature

3 x SDD100

Fig. 6 Transient thermal impedance

junction to case (per diode)

RthJC for various conduction angles d:

d RthJC (K/W)
DC 0.35
180oC 0.37
120oC 0.39
60oC 0.43
30oC 0.47

Constants for ZthJC calculation:

i Rthi (K/W) ti (s)
1 0.013 0.0014
2 0.072 0.062
3 0.265 0.375

Fig. 7 Transient thermal impedance

junction to heatsink (per diode)

RthJK for various conduction angles d:

d RthJK (K/W)
DC 0.55
180oC 0.57
120oC 0.59
60oC 0.63
30oC 0.67

Constants for ZthJK calculation:

i Rthi (K/W) ti (s)
1 0.013 0.0014
2 0.072 0.062
3 0.265 0.375
4 0.2 1.32