SPP11N60S5

SPI11N60S5

Cool MOS™ Power Transistor VDS 600 V

Feature RDS(on) 0.38 Ω
• New revolutionary high voltage technology ID 11 A
• Ultra low gate charge
• Periodic avalanche rated PG-TO262 PG-TO220

• Extreme dv/dt rated 2

• Ultra low effective capacitances 23

1

• Improved transconductance P-TO220-3-1

Type Package Ordering Code Marking

SPP11N60S5 PG-TO220 Q67040-S4198 11N60S5
SPI11N60S5 PG-TO262 Q67040-S4338 11N60S5

Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 °C 11
TC = 100 °C 7
Pulsed drain current, tp limited by Tjmax I D puls 22
Avalanche energy, single pulse EAS 340 mJ
I D = 5.5 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.6
I D = 11 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR 11 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, T C = 25°C Ptot 125 W
Operating and storage temperature T j , T stg -55... +150 °C

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Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 20 V/ns
V DS = 480 V, ID = 11 A, Tj = 125 °C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 1 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling area 2) - 35 -
Soldering temperature, wavesoldering Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche V(BR)DS V GS=0V, ID=11A - 700 -
breakdown voltage
Gate threshold voltage VGS(th) ID=500µΑ, VGS=V DS 3.5 4.5 5.5
Zero gate voltage drain current I DSS V DS=600V, VGS=0V, µA
Tj=25°C, - - 25
Tj=150°C - - 250
Gate-source leakage current I GSS V GS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) V GS=10V, ID=7A, Ω
Tj=25°C - 0.34 0.38
Tj=150°C - 0.92 -
Gate input resistance RG f=1MHz, open Drain - 29 -

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SPI11N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g fs V DS≥2*I D*RDS(on)max, - 6 - S
ID=7A

Input capacitance Ciss V GS=0V, V DS=25V, - 1460 - pF

Output capacitance Coss f=1MHz - 610 -
Reverse transfer capacitance Crss - 21 -
Effective output capacitance,3) Co(er) V GS=0V, - 45 - pF
energy related V DS=0V to 480V

Effective output capacitance,4) Co(tr) - 85 -

time related
Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 130 - ns
Rise time tr ID=11A, R G=6.8Ω - 35 -
Turn-off delay time t d(off) - 150 225
Fall time tf - 20 30

Gate Charge Characteristics

Gate to source charge Qgs VDD=350V, ID=11A - 10.5 - nC
Gate to drain charge Qgd - 24 -
Gate charge total Qg VDD=350V, ID=11A, - 41.5 54
VGS=0 to 10V

Gate plateau voltage V(plateau) VDD=350V, ID=11A - 8 - V

1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V
o(er) DSS.
4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

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SPI11N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25°C - - 11 A
forward current
Inverse diode direct current, ISM - - 22
pulsed
Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V
Reverse recovery time trr VR=350V, IF =IS , - 650 1105 ns
Reverse recovery charge Qrr di F/dt=100A/µs - 7.9 - µC

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance Thermal capacitance
R th1 0.015 K/W Cth1 0.0001878 Ws/K
R th2 0.03 Cth2 0.0007106
R th3 0.056 Cth3 0.000988
R th4 0.197 Cth4 0.002791
R th5 0.216 Cth5 0.007285
R th6 0.083 Cth6 0.063

Tj R th1 R th,n E xternal H eatsink

T case
P tot (t)

C th1 C th2 C th,n

T am b

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SPI11N60S5
1 Power dissipation 2 Safe operating area
Ptot = f (TC) ID = f ( V DS )
parameter : D = 0 , T C=25°C
SPP11N60S5 10 2
140
W
A
120

110
10 1
100
Ptot

90

ID
80

70 10 0

60

50 tp = 0.001 ms
40 tp = 0.01 ms
10 -1 tp = 0.1 ms
30 tp = 1 ms
20
DC

10

0 10 -2 0 1 2 3
0 20 40 60 80 100 120 °C 160 10 10 10 V 10
TC VDS

3 Transient thermal impedance 4 Typ. output characteristic

ZthJC = f (t p) ID = f (VDS); Tj=25°C
parameter: D = tp/T parameter: tp = 10 µs, VGS
1
10 35
K/W 20V
12V
A 10V
10 0

25
ZthJC

ID

10 -1 9V
20

D = 0.5
15
10 -2 D = 0.2
D = 0.1 8V
D = 0.05
D = 0.02 10

10 -3 D = 0.01
single pulse 7V
5

6V
10 -4 -7 -6 -5 -4 -3 -1 0
10 10 10 10 10 s 10 0 5 10 15 VDS 25
tp V

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SPI11N60S5
5 Typ. output characteristic 6 Typ. drain-source on resistance
ID = f (VDS); Tj=150°C RDS(on)=f(ID)
parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS
18 2

A 20V
12V
10V 9V
14 mΩ

RDS(on)
8V
12
ID

10
20V
1
12V
8 10V
7V 9V
6 8V
7V
0.5 6V
4
6V

0 0
0 5 10 15 V 25 0 2 4 6 8 10 12 14 A 18
VDS ID

7 Drain-source on-state resistance 8 Typ. transfer characteristics

RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 7 A, VGS = 10 V parameter: tp = 10 µs
SPP11N60S5
2.1 32
Ω
A
1.8

1.6 24
RDS(on)

1.4
ID

20 25 °C
1.2 150 °C
16
1

0.8 12

0.6
98% 8
0.4 typ
4
0.2

0 0
-60 -20 20 60 100 °C 180 0 4 8 12 V 20
Tj VGS

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SPI11N60S5
9 Typ. gate charge 10 Forward characteristics of body diode
VGS = f (QGate) IF = f (VSD)
parameter: ID = 11 A pulsed parameter: Tj , tp = 10 µs
16
SPP11N60S5
10 2 SPP11N60S5

V
A
0.2 VDS max

12 0.8 VDS max

10 1
VGS

10

IF
8

6
10 0
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2 Tj = 150 °C (98%)

0 10 -1
0 10 20 30 40 50 nC 65 0 0.4 0.8 1.2 1.6 2 2.4 V 3
QGate VSD

11 Avalanche SOA 12 Avalanche energy

IAR = f (tAR) EAS = f (Tj)
par.: Tj ≤ 150 °C par.: ID = 5.5 A, V DD = 50 V
11 350
A
mJ
9

8 250
EAS
IAR

7
200
6

5 Tj (START) =25°C
150
4

3 Tj (START) =125°C
100

2
50
1

0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 µs 10 20 40 60 80 100 120 °C 160
tAR Tj

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SPI11N60S5
13 Drain-source breakdown voltage 14 Avalanche power losses
V(BR)DSS = f (Tj) PAR = f (f )
parameter: E AR=0.6mJ
SPP11N60S5
720 300

V
W

680
V(BR)DSS

PAR
660 200

640
150
620

600 100

580
50
560

540 0 4 5 6
-60 -20 20 60 100 °C 180 10 10 Hz 10
Tj f

15 Typ. capacitances 16 Typ. Coss stored energy

C = f (VDS) Eoss=f(VDS)
parameter: V GS=0V, f=1 MHz
10 4
7.5
µJ
pF
Ciss
6
10 3
5.5
Eoss

5
C

4.5
4
10 2
Coss
3.5
3
2.5
1 2
10 Crss
1.5
1
0.5
10 0 0
0 100 200 300 400 V 600 0 100 200 300 400 V 600
VDS VDS

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SPI11N60S5

Definition of diodes switching characteristics

Rev. 2.7 Page 9 2009-11-30

 SPP11N60S5
SPI11N60S5

PG-TO220-3-1, PG-TO220-3-21

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 SPP11N60S5
SPI11N60S5

PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)

Rev. 2.7 Page 11 2009-11-30

 SPP11N60S5
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Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.

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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

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For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.

Rev. 2.7 Page 12 2009-11-30

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