TLP731,TLP732

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP731,TLP732
Office Machine
Unit in mm
Household Use Equipment
Solid State Relay
Switching Power Supply

The TOSHIBA TLP731 and TLP732 consist of a photo−transistor

optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP package.
TLP732 is no−base internal connection for high−EMI environments.

· Collector−emitter voltage: 55V (min.)

· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
· UL recognized: UL1577, file No. E67349
· BSI approved: BS EN60065: 1994
Certificate No. 6617
BS EN60950: 1992
TOSHIBA 11−7B1
Certificate No. 7366
Isolation voltage: 4000Vrms (min.) Weight: 0.35 g
· Option (D4) type
VDE approved: DIN VDE0884 / 08.87,
Certificate No. 65640
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 6000VPK Pin Configurations (top view)
(Note) When a VDE0884 approved type is needed,
please designate the “Option (D4)”

7.62mm pich 10.16mm pich

standard type (LF2) type
· Creepage distance : 7.0mm (min.) 8.0 mm (min.)
Clearance : 7.0 mm (min.) 8.0 mm (min.)
Insulation thickness : 0.5 mm (min.) 0.5 mm (min.)

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Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Forward current IF 60 mA
Forward current derating (Ta ≥ 39°C) ∆IF / °C -0.7 mA / °C
Peak forward current (100µs pulse, 100pps) IFP 1 A
LED

Power dissipation PD 100 mW

Power dissipation derating (Ta ≥ 25°C) ∆PD / °C -1.0 mW / °C
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 55 V
Collector-base voltage (TLP731) VCBO 80 V
Emitter-collector voltage VECO 7 V
Detector

Emitter-base voltage (TLP731) VEBO 7 V

Collector current IC 50 mA

Power dissipation PC 150 mW

Power dissipation derating (Ta ≥ 25°C) ∆PC / °C -1.5 mW / °C
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Operating temperature range Topr -55~100 °C
Lead soldering temperature (10s) Tsol 260 °C
Total package power dissipation PT 250 mW
Total package power dissipation derating (Ta ≥ 25°C) ∆PT / °C -2.5 mW / °C
Isolation voltage (AC, 1min., R.H.≤ 60%) BVS 4000 Vrms

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC ― 5 24 V

Forward current IF ― 16 25 mA
Collector current IC ― 1 10 mA
Operating temperature Topr -25 ― 85 °C

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Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 10mA 1.0 1.15 1.3 V

LED

Reverse current IR VR = 5V ― ― 10 µA
Capacitance CT V = 0, f = 1MHz ― 30 ― pF
Collector-emitter
V(BR)CEO IC = 0.5mA 55 ― ― V
breakdown voltage
Emitter-collector
V(BR)ECO IE = 0.1mA 7 ― ― V
breakdown voltage
Collector-base
V(BR)CBO IC = 0.1mA 80 ― ― V
breakdown voltage (TLP731)
Emitter-base
V(BR)EBO IE = 0.1mA 7 ― ― V
breakdown voltage (TLP731)
Detector

VCE = 24V ― 10 100 nA

Collector dark current ICEO
VCE = 24V, Ta = 85°C ― 2 50 µA
Collector dark current VCE = 24V, Ta = 85°C
ICER ― 0.5 10 µA
(TLP731) RBE = 1MΩ
Collector dark current
ICBO VCB = 10V ― 0.1 ― nA
(TLP731)
DC forward current gain
hFE VCE = 5V, IC = 0.5mA ― 400 ― ―
(TLP731)
Capacitance collector to
CCE V = 0, f = 1MHz ― 10 ― pF
emitter

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

IF = 5mA, VCE = 5V 50 ― 600

Current transfer ratio IC / IF %
Rank GB
100 ― 600

IF = 1mA, VCE = 0.4V ― 60 ―

Saturated CTR IC / IF (sat) %
Rank GB 30 ― ―
Base photo-current (TLP731) IPB IF = 5mA, VCB = 5V ― 10 ― µA
IC = 2.4mA, IF = 8mA ― ― 0.4
Collector-emitter saturation
VCE (sat) IC = 0.2mA, IF = 1mA ― 0.2 ― V
voltage
Rank GB ― ― 0.4

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Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Capacitance
CS VS = 0, f = 1MHz ― 0.8 ― pF
(input to output)
Isolation resistance RS VS = 500V 1×1012 1014 ― Ω
AC, 1 minute 4000 ― ―
Vrms
Isolation voltage BVS AC, 1 second, in oil ― 10000 ―
DC, 1 minute, in oil ― 10000 ― Vdc

Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Rise time tr ― 2 ―
Fall time tf VCC = 10V, IC = 2mA ― 3 ―
µs
RL = 100Ω
Turn-on time ton ― 3 10
Turn-off time toff ― 3 10
Turn-on time tON ― 2 ―
RL = 1.9kΩ (Fig.1)
Storage time tS RBE = open ― 15 ― µs
VCC = 5V, IF = 16mA
Turn-off time tOFF ― 25 ―
Turn-on time tON ― 2 ―
RL = 1.9kΩ (Fig.1)
Storage time tS RBE = 220kΩ (TLP731) ― 12 ― µs
VCC = 5V, IF = 16mA
Turn-off time tOFF ― 20 ―

Fig. 1 Switching time test circuit

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RESTRICTIONS ON PRODUCT USE 000707EBC

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.

· The products described in this document are subject to the foreign exchange and foreign trade laws.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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