TLP127

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP127
Programmable Controllers Unit in mm
DC−Output Module
Telecommunication

The TOSHIBA mini flat coupler TLP127 is a small outline coupler,

suitable for surface mount assembly.
TLP127 consists of a gallium arsenide infrared emitting diode, optically
coupled to a darlington photo transistor with an integral base−emitter
resistor, and provides 300V VCEO.

• Collector−emitter voltage: 300 V (min.)

• Current transfer ratio: 1000% (min.)
• Isolation voltage: 2500Vrms (min.)
• UL recognized: UL1577, file no. E67349
• BSI approved: BS EN60065:2002, certificate no.8927
BS EN60950-1:2002, certificate no.8928 TOSHIBA 11−4C1
Weight: 0.09 g

Pin Configurations (top view)

1 6

3 4

1 : ANODE
3 : CATHODE
4 : EMITTER
6 : COLLECTOR

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Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Forward current IF 50 mA
Forward current derating ΔIF / °C −0.7 (Ta ≥ 53°C) mA / °C
LED

Pulse forward current IFP 1 (100μs pulse, 100pps) A

Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Collector−emitter voltage VCEO 300 V
Emitter−collector voltage VECO 0.3 V
Collector current IC 150 mA
Detector

Collector power dissipation PC 150 mW

Collector power dissipation
ΔPC / °C −1.5 mW / °C
derating (Ta ≥ 25°C)
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Operating temperature range Topr −55~100 °C
Lead soldering temperature Tsol 260 (10s) °C
Total package power dissipation PT 200 mW
Total package power dissipation
ΔPT / °C −2.0 mW / °C
derating (Ta ≥ 25°C)
Isolation voltage (Note 1) BVS 2500 (AC, 1min., R.H.≤ 60%) Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

(Note 1) Device considered a two terminal device: Pins 1, 3 shorted together and pins 4, 6 shorted together.

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Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V

LED

Reverse current IR VR = 5V ― ― 10 μA
Capacitance CT V = 0, f = 1 MHz ― 30 ― pF
Collector−emitter
V(BR) CEO IC = 0.1 mA 300 ― ― V
breakdown voltage
Emitter−collector
V(BR) ECO IE = 0.1 mA 0.3 ― ― V
Detector

breakdown voltage
VCE = 200 V ― 10 200 nA
Collector dark current ICEO
VCE = 200 V, Ta = 85°C ― ― 20 μA
Capacitance collector to
CCE V = 0, f = 1 MHz ― 12 ― pF
emitter

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition MIn. Typ. Max. Unit

Current transfer ratio IC / IF IF = 1mA, VCE = 1 V 1000 4000 ― %

Saturated CTR IC / IF (sat) IF = 10 mA, VCE = 1 V 500 ― ― %

Collector−emitter IC = 10 mA, IF = 1 mA ― ― 1.0

VCE (sat) V
saturation voltage IC = 100 mA, IF = 10 mA 0.3 ― 1.2

Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Capacitance
CS VS = 0, f = 1 MHz ― 0.8 ― pF
(input to output)
10 14
Isolation resistance RS VS = 500 V, R.H.≤ 60% 5×10 10 ― Ω
AC, 1 minute 2500 ― ―
Vrms
Isolation voltage BVS AC, 1 second, in oil ― 5000 ―
DC, 1 minute, in oil ― 5000 ― Vdc

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Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Rise time tr ― 40 ―
Fall time tf VCC = 10 V, IC = 10 mA ― 15 ―
μs
RL = 100 Ω
Turn−on time ton ― 50 ―
Turn−off time toff ― 15 ―
Turn−on time tON ― 5 ―
RL = 180 Ω (Fig.1)
Storage time ts ― 40 ― μs
VCC = 10 V, IF = 16 mA
Turn−off time tOFF ― 80 ―

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC ― ― 200 V

Forward current IF ― 16 25 mA
Collector current IC ― ― 120 mA
Operating temperature Topr −25 ― 85 °C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.

Fig. 1 Switching time test circuit

IF
IF VCC ts
RL VCC
VCE 9V
VCE
1V

tON tOFF

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 TLP127

IF – Ta PC – Ta
100 200

Allowable collector power

Allowable forward current

dissipation PC (mW)
80 160

120
IF (mA)

60

40 80

20 40

0 0
−20 0 20 40 60 80 100 120 −20 0 20 40 60 80 100 120

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

IFP – DR IF – V F
3000 100
Ta = 25°C
IFP (mA)

Pulse width ≤ 100μs

Ta = 25°C 50
1000 30
(mA)

500
10
Pulse forward current

300
IF

5
Forward current

100 3

50
1
30

0.5
10 0.3
3 10−3 3 10−2 3 10−1 3 100

Duty cycle ratio DR 0.1

1.6 1.8
0.6 0.8 1.0 1.2 1.4

Forward voltage VF (V)

ΔVF / ΔTa – IF IFP – VFP

−3.2 1000
coefficient ΔVF / ΔTa (mV / °C)
Forward voltage temperature

500
(mA)

−2.8
300

−2.4
IFP

100
−2.0
Pulse forward current

50
30
−1.6

10
−1.2
Pulse width ≤ 10μs
5
Repetitive
−0.8 3
Frequency = 100Hz

−0.4 Ta = 25°C
1
0.1 0.3 0.5 1 3 5 10 30 50 0.6 1.0 1.4 1.8 2.2 2.6 3.0

Forward current IF (mA) Pulse forward voltage VFP (V)

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 TLP127

IC – VCE I C – IF
160 300
Ta = 25°C 10mA
4mA

(mA)
(mA)

Sample A
100
120

IC
IC

50

Collector current
30
Collector current

2mA
80
Sample B
10
1mA

5
40 Ta = 25°C
3 VCE = 1.2V
IF = 0.5mA VCE = 1V

0 1
0.4 0.8 1.2 1.6 2.0 0.5 1 3 5 10 30 50 100

Collector–emitter voltage VCE (V) Forward current IF (mA)

Switching Time – RL IC / IF – IF
1000 10000
Ta = 25°C Sample A Ta = 25°C
VCC = 10V VCE = 1.2V
500
VCE = 1V
5000
300
Switching time (μs)

tOFF(IF = 16mA)
3000
IC / IF (%)

100
Sample B

50 tOFF(IF = 1.6mA)

1000
30
Current transfer ratio

tON(IF = 1.6mA)
10 500

5 300

3
tON(IF = 16mA)

1 100
50 100 300 500 1k 3k 5k 10k 0.3 0.5 1 3 5 10 30 50

Load resistance RL (kΩ) Forward current IF (mA)

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ICEO – Ta IC – Ta
1
10 120
VCE = 1V

(mA)
100
IF = 10mA

80

IC
Collector current
0 60
10

40 1mA

20
(μA)

0
−1 -40 -20 0 20 40 60 80 100
10
ICEO

Ambient temperature Ta (℃)

Collector dark current

VCE = 200V

150V
80V
−2
10 VCE(sat) – Ta
1.2
IF = 1mA
IC = 10mA
1.0
Collector-emitter saturation
voltage VCE(sat) (V)

0.8

−3
10
0.6

0.4

0.2

−4
10
0 20 40 60 80 100 0
-40 -20 0 20 40 60 80 100

Ambient temperature Ta (℃) Ambient temperature Ta (℃)

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RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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