TS4900

300mW at 3.3V SUPPLY AUDIO POWER AMPLIFIER

WITH STANDBY MODE ACTIVE HIGH

■ OPERATING FROM VCC = 2.5V to 5.5V PIN CONNECTIONS (top view)

■ 0.7W OUTPUT POWER @ Vcc=5V, THD=1%,
f=1kHz, with an 8 Ω load
■ 0.3W OUTPUT POWER @ Vcc=3.3V, TS4900IST - MiniSO8
THD=1%, f=1kHz, with an 8 Ω load
■ ULTRA LOW CONSUMPTION IN STANDBY
MODE (10nA)
■ 75dB PSRR @ 217Hz from 5V to 2.6V Standby 1 8 VOUT2
■ ULTRA LOW POP & CLICK Bypass 2 7 GND
■ ULTRA LOW DISTORTION (0.1%) VIN+ 3 6 VCC
■ UNITY GAIN STABLE VIN- 4 5 VOUT1
■ AVAILABLE IN MiniSO8 & SO8
DESCRIPTION
The TS4900 is an audio power amplifier designed
to provide the best price to power ratio while pre-
serving high audio quality. TS4900ID-TS4900IDT - SO8

Available in MiniSO8 & SO8 package, it is capable

of delivering up to 0.7W of continuous RMS ouput
power into an 8Ω load @ 5V.
Standby 1 8 VOUT2
Bypass 2 7 GND
TS4900 is also exhibiting an outstanding 0.1% VIN+ 3 6 VCC
distortion level (THD) from a 5V supply for a Pout 4 5
VIN- VOUT1
of 200mW RMS.

An externally controlled standby mode control re-

duces the supply current to less than 10nA. It also
includes an internal thermal shutdown protection.

The unity-gain stable amplifier can be configured

by external gain setting resistors. TYPICAL APPLICATION SCHEMATIC

APPLICATIONS
■ Mobile Phones (Cellular / Cordless)
■ PDAs
■ Portable Audio Devices
ORDER CODE

Temperature Package
Part Number
Range
S D
TS4900IS •
-40, +85°C
TS4900ID •

S = MiniSO Package (MiniSO) only available in Tape & Reel (ST)

D = Small Outline Package (SO) - also available in Tape & Reel (DT)

January 2002 1/19

TS4900

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VCC Supply voltage 1) 6 V
Vi 2) GND to VCC V
Input Voltage
Toper Operating Free Air Temperature Range -40 to + 85 °C
Tstg Storage Temperature -65 to +150 °C
Tj Maximum Junction Temperature 150 °C
Rthja Thermal Resistance Junction to Ambient 3) °C/W
SO8 175
MiniSO8 215
Pd Power Dissipation Internally Limited4)
ESD Human Body Model 2 kV
ESD Machine Model 200 V
Latch-up Latch-up Immunity Class A
Lead Temperature (soldering, 10sec) 250 °C
1. All voltages values are measured with respect to the ground pin.
2. The magnitude of input signal must never exceed VCC + 0.3V / G ND - 0.3V
3. Device is protected in case of over temperature by a thermal shutdown active @ 150°C.
4. Exceeding the power derating curves during a long period, will cause abnormal operation.

OPERATING CONDITIONS
Symbol Parameter Value Unit
VCC Supply Voltage 2.5 to 5.5 V
VICM Common Mode Input Voltage Range GND to VCC - 1.5V V
Standby Voltage Input :
VSTB Device ON GND ≤ VSTB ≤ 0.5V V
Device OFF VCC - 0.5V ≤ VSTB ≤ VCC
RL Load Resistor 4 - 32 Ω
Rthja 1) °C/W
Thermal Resistance Junction to Ambient
SO8 150
MiniSO8 190
1. This thermal resistance can be reduced with a suitable PCB layout (see Power Derating Curves)

2/19
 TS4900
ELECTRICAL CHARACTERISTICS
VCC = +5V, GND = 0V, Tamb = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit

Supply Current
ICC 6 8 mA
No input signal, no load

ISTANDBY Standby Current 1) 10 1000 nA

No input signal, Vstdby = Vcc, RL = 8Ω
Output Offset Voltage
Voo 5 20 mV
No input signal, RL = 8Ω
Output Power
Po 0.7 W
THD = 1% Max, f = 1kHz, RL = 8Ω
Total Harmonic Distortion + Noise
THD + N 0.15 %
Po = 250mW rms, Gv = 2, 20Hz < f < 20kHz, RL = 8Ω

PSRR Power Supply Rejection Ratio2) 75 dB

f = 217Hz, RL = 8Ω, RFeed = 22KΩ, Vripple = 200mV rms
Phase Margin at Unity Gain
ΦM 70 Degrees
RL = 8Ω, CL = 500pF

Gain Margin
GM RL = 8Ω, CL = 500pF 20 dB

Gain Bandwidth Product

GBP RL = 8Ω 2 MHz

1. Standby mode is actived when Vstdby is tied to Vcc

2. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the surimposed sinus signal to Vcc @ f = 217Hz

VCC = +3.3V, GND = 0V, Tamb = 25°C (unless otherwise specified)3)

Symbol Parameter Min. Typ. Max. Unit

Supply Current
ICC 5.5 8 mA
No input signal, no load

ISTANDBY Standby Current 1) 10 1000 nA

No input signal, Vstdby = Vcc, RL = 8Ω
Output Offset Voltage
Voo 5 20 mV
No input signal, RL = 8Ω
Output Power
Po 300 mW
THD = 1% Max, f = 1kHz, RL = 8Ω
Total Harmonic Distortion + Noise
THD + N 0.15 %
Po = 250mW rms, Gv = 2, 20Hz < f < 20kHz, RL = 8Ω

PSRR Power Supply Rejection Ratio2) 75 dB

f = 217Hz, RL = 8Ω, RFeed = 22KΩ, Vripple = 200mV rms
Phase Margin at Unity Gain
ΦM 70 Degrees
RL = 8Ω, CL = 500pF

Gain Margin
GM RL = 8Ω, CL = 500pF
20 dB

Gain Bandwidth Product

GBP RL = 8Ω
2 MHz

1. Standby mode is actived when Vstdby is tied to Vcc

2. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the surimposed sinus signal to Vcc @ f = 217Hz
3. All electrical values are made by correlation between 2.6V and 5V measurements

3/19
TS4900

ELECTRICAL CHARACTERISTICS
VCC = 2.6V, GND = 0V, Tamb = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit

Supply Current
ICC 5.5 8 mA
No input signal, no load

ISTANDBY Standby Current 1) 10 1000 nA

No input signal, Vstdby = Vcc, RL = 8Ω
Output Offset Voltage
Voo 5 20 mV
No input signal, RL = 8Ω
Output Power
Po 180 mW
THD = 1% Max, f = 1kHz, RL = 8Ω
Total Harmonic Distortion + Noise
THD + N 0.15 %
Po = 200mW rms, Gv = 2, 20Hz < f < 20kHz, RL = 8Ω

PSRR Power Supply Rejection Ratio2) 75 dB

f = 217Hz, RL = 8Ω, RFeed = 22KΩ, Vripple = 200mV rms
Phase Margin at Unity Gain
ΦM 70 Degrees
RL = 8Ω, CL = 500pF

Gain Margin
GM RL = 8Ω, CL = 500pF 20 dB

Gain Bandwidth Product

GBP RL = 8Ω 2 MHz

1. Standby mode is actived when Vstdby is tied to Vcc

2. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the surimposed sinus signal to Vcc @ f = 217Hz

Components Functional Description

Inverting input resistor which sets the closed loop gain in conjunction with Rfeed. This resistor also
Rin
forms a high pass filter with Cin (fc = 1 / (2 x Pi x Rin x Cin))
Cin Input coupling capacitor which blocks the DC voltage at the amplifier input terminal
Rfeed Feed back resistor which sets the closed loop gain in conjunction with Rin
Cs Supply Bypass capacitor which provides power supply filtering
Cb Bypass pin capacitor which provides half supply filtering
Low pass filter capacitor allowing to cut the high frequency
Cfeed
(low pass filter cut-off frequency 1 / (2 x Pi x Rfeed x Cfeed))
Rstb Pull-up resistor which fixes the right supply level on the standby pin
Gv Closed loop gain in BTL configuration = 2 x (Rfeed / Rin)

REMARKS
1. All measurements, except PSRR measurements, are made with a supply bypass capacitor Cs = 100µF.
2. The standby response time is about 1µs.

4/19
 TS4900

Fig. 1 : Open Loop Frequency Response Fig. 2 : Open Loop Frequency Response

0 0
60 -20 60 -20
Gain Vcc = 5V Gain Vcc = 5V
RL = 8Ω -40 ZL = 8Ω + 560pF -40
40 Tamb = 25°C -60 Tamb = 25°C
40 -60
Phase -80

Phase (Deg)
Phase -80
Gain (dB)

Phase (Deg)
20 -100

Gain (dB)
20 -100
-120
-120
0 -140
0 -140
-160
-160
-20 -180
-20 -180
-200
-200
-40 -220
0.3 1 10 100 1000 10000 -40 -220
0.3 1 10 100 1000 10000
Frequency (kHz) Frequency (kHz)

Fig. 3 : Open Loop Frequency Response Fig. 4 : Open Loop Frequency Response

80 0 80 0
-20 Vcc = 3.3V -20
Gain Vcc = 33V Gain
60 -40 60 ZL = 8Ω + 560pF -40
RL = 8Ω
Tamb = 25°C
Tamb = 25°C -60 -60
40 -80 40 -80
Gain (dB)
Phase (Deg)

Phase (Deg)
Gain (dB)

Phase -100 Phase -100

20 -120 20 -120
-140 -140
0 -160 0 -160
-180 -180
-20 -200 -20 -200
-220 -220
-40 -240 -40 -240
0.3 1 10 100 1000 10000 0.3 1 10 100 1000 10000
Frequency (kHz) Frequency (kHz)

Fig. 5 : Open Loop Frequency Response Fig. 6 : Open Loop Frequency Response

80 0 80 0
-20 -20
Vcc = 2.6V Gain Vcc = 2.6V
Gain
60 RL = 8Ω -40 60 ZL = 8Ω + 560pF -40
Tamb = 25°C -60 Tamb = 25°C -60
40 -80 40 -80
Gain (dB)

Phase (Deg)
Gain (dB)
Phase (Deg)

Phase -100 Phase -100

20 -120 20 -120
-140 -140
0 -160 0 -160
-180 -180
-20 -200 -20 -200
-220 -220
-40 -240 -40 -240
0.3 1 10 100 1000 10000 0.3 1 10 100 1000 10000
Frequency (kHz) Frequency (kHz)

5/19
TS4900

Fig. 7 : Open Loop Frequency Response Fig. 8 : Open Loop Frequency Response

100 -80 100 -80

80 -100 80 Phase -100

Phase

-120 -120
60 60
Gain Gain

Phase (Deg)
-140

Phase (Deg)
Gain (dB)

Gain (dB)
-140
40 40
-160
-160
20 20
-180
-180
0 0
Vcc = 5V Vcc = 3.3V -200
CL = 560pF -200
CL = 560pF
-20 -20 -220
Tamb = 25°C Tamb = 25°C
-220
-40 -40 -240
0.3 1 10 100 1000 10000 0.3 1 10 100 1000 10000
Frequency (kHz) Frequency (kHz)

Fig. 9 : Open Loop Frequency Response

100 -80

80 Phase -100

-120
60
Gain
Phase (Deg)

-140
Gain (dB)

40
-160
20
-180
0
-200
Vcc = 2.6V
-20 CL = 560pF -220
Tamb = 25°C
-40 -240
0.3 1 10 100 1000 10000
Frequency (kHz)

6/19
 TS4900

Fig. 10 : Power Supply Rejection Ratio (PSRR) Fig. 11 : Power Supply Rejection Ratio (PSRR)
vs Power supply vs Feedback Capacitor

-30 -10
Vripple = 200mVrms Vcc = 5, 3.3 & 2.6V
-20 Cfeed=0
Rfeed = 22Ω Cb = 1µF & 0.1µF
-40 Input = floating Rfeed = 22kΩ
RL = 8Ω -30 Vripple = 200mVrms Cfeed=150pF
Tamb = 25°C Input = floating
PSRR (dB)

PSRR (dB)
-50
-40 RL = 8Ω Cfeed=330pF
Tamb = 25°C
Vcc = 5V, 3.3V & 2.6V -50
-60 Cb = 1µF & 0.1µF
-60
-70
-70 Cfeed=680pF

-80 -80
10 100 1000 10000 100000 10 100 1000 10000 100000
Frequency (Hz) Frequency (Hz)

Fig. 12 : Power Supply Rejection Ratio (PSRR) Fig. 13 : Power Supply Rejection Ratio (PSRR)
vs Bypass Capacitor vs Input Capacitor

-10 -10
Cin=1µF
Cb=1µF Vcc = 5, 3.3 & 2.6V Vcc = 5, 3.3 & 2.6V
-20 Cin=330nF
Rfeed = 22k Rfeed = 22kΩ, Rin = 22k
Rin = 22k, Cin = 1µF -20
Cb=10µF Cin=220nF Cb = 1µF
-30 Rg = 100Ω, RL = 8Ω Rg = 100Ω, RL = 8Ω
Tamb = 25°C Tamb = 25°C
-30
PSRR (dB)
PSRR (dB)

-40
Cb=47µF
-50 -40

-60 Cin=100nF
-50 Cin=22nF
-70
Cb=100µF

-80 -60
10 100 1000 10000 100000 10 100 1000 10000 100000
Frequency (Hz) Frequency (Hz)

Fig. 14 : Power Supply Rejection Ratio (PSRR)

vs Feedback Resistor

-10
Vcc = 5, 3.3 & 2.6V
-20 Cb = 1µF & 0.1µF Rfeed=110kΩ
Vripple = 200mVrms
-30 Input = floating Rfeed=47kΩ
RL = 8Ω
PSRR (dB)

-40 Tamb = 25°C

-50

-60
Rfeed=22kΩ
-70
Rfeed=10kΩ
-80
10 100 1000 10000 100000
Frequency (Hz)

7/19
TS4900

Fig. 15 : Pout @ THD + N = 1% vs Supply Fig. 16 : Pout @ THD + N = 10% vs Supply

Voltage vs RL Voltage vs RL

1.0 1.2
Gv = 2 & 10 Gv = 2 & 10

Output power @ 10% THD + N (W)

Cb = 1µF Cb = 1µF
Output power @ 1% THD + N (W)

8Ω
1.0 4Ω
0.8 F = 1kHz F = 1kHz
BW < 125kHz BW < 125kHz 8Ω
Tamb = 25οC 4Ω 0.8 Tamb = 25°C
0.6
16 Ω
16 Ω 0.6
0.4
0.4

0.2
0.2
32 Ω 32 Ω
0.0 0.0
2.5 3.0 3.5 4.0 4.5 5.0 2.5 3.0 3.5 4.0 4.5 5.0
Vcc (V) Vcc (V)

Fig. 17 : Power Dissipation vs Pout Fig. 18 : Power Dissipation vs Pout

1.4 0.6
Vcc=5V Vcc=3.3V
1.2 f=1kHz 0.5 f=1kHz
Power Dissipation (W)

THD+N<1% THD+N<1% RL=4Ω

RL=4Ω
Power Dissipation (W)

1.0
0.4
0.8
0.3
0.6
RL=8Ω 0.2
0.4 RL=8Ω

0.1
0.2 RL=16Ω
RL=16Ω
0.0 0.0
0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.2 0.4 0.6
Output Power (W) Output Power (W)

Fig. 19 : Power Dissipation vs Pout Fig. 20 : Power Derating Curves

0.40
Vcc=2.6V
0.35
f=1kHz
Power Dissipation (W)

0.30 THD+N<1%
RL=4Ω
0.25

0.20

0.15
RL=8Ω
0.10

0.05
RL=16Ω
0.00
0.0 0.1 0.2 0.3
Output Power (W)

8/19
 TS4900

Fig. 21 : Output Power vs Load Resistance Fig. 22 : Output Power vs Load Resistance

1.0
THD+N=1% 1.2 THD+N=10%
Gv = 2 & 10 Gv = 2 & 10
0.8 Cb = 1µF 1.0 Cb = 1µF
F = 1kHz Vcc=5V F = 1kHz

Output Power (W)

Output power (W)

Vcc=5V BW < 125kHz BW < 125kHz

Tamb = 25°C 0.8 Tamb = 25°C
0.6
Vcc=4.5V
Vcc=4.5V
0.6
Vcc=4V Vcc=4V
0.4
0.4

0.2
0.2
Vcc=3.5V Vcc=3.5V
Vcc=3V
Vcc=3V Vcc=2.5V Vcc=2.5V
0.0 0.0
8 16 24 32 8 16 24 32

Load Resistance ( ) Load Resistance ( )

Fig. 23 : Clipping Voltage vs Supply Voltage Fig. 24 : Frequency response vs Cin & Cfeed

1.0 10
Tamb = 25°C
0.9
5
0.8 4Ω High Side 0
Dropout Voltage (V)

Cfeed = 330pF
0.7 4Ω Low Side
Gain (dB)

-5 Cfeed = 680pF
0.6
-10 Cin = 470nF Cfeed = 2.2nF
0.5
8Ω High Side
8Ω Low Side -15 Cin = 22nF
0.4

0.3 -20 Cin = 82nF Rin = Rfeed = 22kΩ

Tamb = 25°C
0.2 -25
2.5 3.0 3.5 4.0 4.5 5.0 10 100 1000 10000
Supply Voltage (V) Frequency (Hz)

Fig. 25 : Noise Floor

100
Vcc = 2.5V to 5V
Rin = Rfeed = 22kΩ
Output Noise Voltage ( V)

80 Cb = Cin = 1µF
Input Grounded
BW < 22kHz
60 Tamb = 25°C

40
VOUT1 + VOUT2 Standby = ON

20

0
20 100 1000 10000
Frequency (Hz)

9/19
TS4900

Fig. 26 : THD + N vs Output Power Fig. 27 : THD + N vs Output Power

10 10
Rl = 4Ω RL = 4Ω, Vcc = 5V
Vcc = 5V Gv = 10
Gv = 2 Cb = Cin = 1µF
Cb = Cin = 1µF BW < 125kHz, Tamb = 25°C
BW < 125kHz
THD + N (%)

THD + N (%)
Tamb = 25°C
20kHz
1 1
20kHz
20Hz

20Hz, 1kHz 1kHz

0.1 0.1
1E-3 0.01 0.1 1 1E-3 0.01 0.1 1
Output Power (W) Output Power (W)

Fig. 28 : THD + N vs Output Power Fig. 29 : THD + N vs Output Power

10 10
RL = 4Ω, Vcc = 3.3V RL = 4Ω, Vcc = 3.3V
Gv = 2 Gv = 10
Cb = Cin = 1µF Cb = Cin = 1µF
BW < 125kHz BW < 125kHz
Tamb = 25°C Tamb = 25°C
THD + N (%)

THD + N (%)

1 20kHz
1

20kHz

0.1 20Hz
20Hz, 1kHz 1kHz
0.1
1E-3 0.01 0.1 1 1E-3 0.01 0.1 1
Output Power (W) Output Power (W)

Fig. 30 : THD + N vs Output Power Fig. 31 : THD + N vs Output Power

10 10
RL = 4Ω, Vcc = 2.6V RL = 4Ω, Vcc = 2.6V
Gv = 2 Gv = 10
Cb = Cin = 1µF Cb = Cin = 1µF
BW < 125kHz BW < 125kHz
Tamb = 25°C
THD + N (%)

Tamb = 25°C
THD + N (%)

1 20kHz
1

20kHz
20Hz

0.1 1kHz
20Hz, 1kHz
0.1
1E-3 0.01 0.1 1E-3 0.01 0.1
Output Power (W) Output Power (W)

10/19
 TS4900

Fig. 32 : THD + N vs Output Power Fig. 33 : THD + N vs Output Power

10 10
RL = 8Ω RL = 8Ω
Vcc = 5V Vcc = 5V
Gv = 2 Gv = 10
Cb = Cin = 1µF Cb = Cin = 1µF
BW < 125kHz BW < 125kHz
THD + N (%)

THD + N (%)
Tamb = 25°C
1 Tamb = 25°C 1

20Hz 20kHz
20Hz, 1kHz 20kHz

0.1 0.1
1kHz
1E-3 0.01 0.1 1 1E-3 0.01 0.1 1
Output Power (W) Output Power (W)

Fig. 34 : THD + N vs Output Power Fig. 35 : THD + N vs Output Power

10 10
RL = 8Ω, Vcc = 3.3V RL = 8Ω, Vcc = 3.3V
Gv = 2 Gv = 10
Cb = Cin = 1µF Cb = Cin = 1µF
BW < 125kHz BW < 125kHz
Tamb = 25°C
THD + N (%)

THD + N (%)
Tamb = 25°C
1 1

20Hz 20kHz

20kHz
20Hz, 1kHz

0.1 0.1
1kHz

1E-3 0.01 0.1 1 1E-3 0.01 0.1 1

Output Power (W) Output Power (W)

Fig. 36 : THD + N vs Output Power Fig. 37 : THD + N vs Output Power

10 10
RL = 8Ω, Vcc = 2.6V RL = 8Ω, Vcc = 2.6V
Gv = 2 Gv = 10
Cb = Cin = 1µF Cb = Cin = 1µF
BW < 125kHz BW < 125kHz
Tamb = 25°C
THD + N (%)

THD + N (%)

Tamb = 25°C
1 1

20Hz 20kHz
20Hz, 1kHz 20kHz

0.1 0.1 1kHz

1E-3 0.01 0.1 1E-3 0.01 0.1

Output Power (W) Output Power (W)

11/19
TS4900

Fig. 38 : THD + N vs Output Power Fig. 39 : THD + N vs Output Power

10 10
RL = 16Ω, Vcc = 5V RL = 16Ω, Vcc = 5V
Gv = 2 Gv = 10
Cb = Cin = 1µF Cb = Cin = 1µF
BW < 125kHz BW < 125kHz
1 Tamb = 25°C 1 Tamb = 25°C

THD + N (%)
THD + N (%)

20kHz
20kHz

0.1 0.1

20Hz, 1kHz 1kHz 20Hz

0.01 0.01
1E-3 0.01 0.1 1 1E-3 0.01 0.1 1
Output Power (W) Output Power (W)

Fig. 40 : THD + N vs Output Power Fig. 41 : THD + N vs Output Power

10 10
RL = 16Ω, Vcc = 3.3V RL = 16Ω
Gv = 2 Vcc = 3.3V
Cb = Cin = 1µF Gv = 10
BW < 125kHz Cb = Cin = 1µF
1 Tamb = 25°C 1
BW < 125kHz
THD + N (%)
THD + N (%)

Tamb = 25°C
20kHz
20kHz

0.1 0.1

1kHz
20Hz, 1kHz 20Hz
0.01 0.01
1E-3 0.01 0.1 1E-3 0.01 0.1
Output Power (W) Output Power (W)

Fig. 42 : THD + N vs Output Power Fig. 43 : THD + N vs Output Power

10 10
RL = 16Ω RL = 16Ω
Vcc = 2.6V Vcc = 2.6V
Gv = 2 Gv = 10
Cb = Cin = 1µF Cb = Cin = 1µF
1 1
BW < 125kHz BW < 125kHz
THD + N (%)
THD + N (%)

Tamb = 25°C Tamb = 25°C

20Hz 20kHz
20kHz
0.1 0.1

20Hz, 1kHz 1kHz

0.01 0.01
1E-3 0.01 0.1 1E-3 0.01 0.1
Output Power (W) Output Power (W)

12/19
 TS4900

Fig. 44 : Signal to Noise Ratio vs Power Supply Fig. 45 : Signal to Noise Ratio Vs Power Supply
with Unweighted Filter (20Hz to 20kHz) with Unweighted Filter (20Hz to 20kHz)

100 90

90
80
RL=16Ω RL=8Ω RL=4Ω
80

SNR (dB)
RL=8Ω
SNR (dB)

70 RL=16Ω RL=4Ω
70

Gv = 2 60 Gv = 10
60 Cb = Cin = 1µF Cb = Cin = 1µF
THD+N < 0.4% THD+N < 0.7%
Tamb = 25°C Tamb = 25°C
50 50
2.5 3.0 3.5 4.0 4.5 5.0 2.5 3.0 3.5 4.0 4.5 5.0
Vcc (V) Vcc (V)

Fig. 46 : Signal to Noise Ratio vs Power Supply Fig. 47 : Signal to Noise Ratio vs Power Supply
with Weighted Filter type A with Weighted Filter Type A

110 90

100
80
RL=16Ω RL=8Ω RL=4Ω
90
SNR (dB)

RL=8Ω
SNR (dB)

70 RL=16Ω RL=4Ω
80

Gv = 2 60 Gv = 10
70 Cb = Cin = 1µF Cb = Cin = 1µF
THD+N < 0.4% THD+N < 0.7%
Tamb = 25°C Tamb = 25°C
60 50
2.5 3.0 3.5 4.0 4.5 5.0 2.5 3.0 3.5 4.0 4.5 5.0
Vcc (V) Vcc (V)

Fig. 48 : Current Consumption vs Power Fig. 49 : Current Consumption vs Standby

Supply Voltage Voltage @ Vcc = 5V

7 7
Vstandby = 0V Vcc = 5V
6 Tamb = 25°C 6 Tamb = 25°C

5 5
Icc (mA)
Icc (mA)

4 4

3 3

2 2

1 1

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Vcc (V) Vstandby (V)

13/19
TS4900

Fig. 50 : Current Consumption vs Standby Fig. 51 : Current Consumption vs Standby

Voltage @ Vcc = 3.3V Voltage @ Vcc = 2.6V

6 6
Vcc = 3.3V Vcc = 2.6V
Tamb = 25°C Tamb = 25°C
5 5

4 4

Icc (mA)
Icc (mA)

3 3

2 2

1 1

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5
Vstandby (V) Vstandby (V)

14/19
 TS4900

■ BTL Configuration Principle bandwidth by adding a capacitor (Cfeed) in

parallel with Rfeed. Its form a low pass filter with a
The TS4900 is a monolithic power amplifier with a
-3dB cut off frequency
BTL (Bridge Tied Load) output configuration. BTL
means that each end of the load is connected to 1
F C H = ----------------------------------------------- ( Hz )
two single ended output amplifiers. Thus, we have: 2π Rfe ed Cfeed
■ Power dissipation and efficiency
Single ended output 1 = Vout1 = Vout (V)
Single ended output 2 = Vout2 = -Vout (V) Hypothesis :

And Vout1 - Vout2 = 2Vout (V) • Voltage and current in the load are sinusoidal
(Vout and Iout)
The output power is : • Supply voltage is a pure DC source (Vcc)

( 2 Vout RMS ) 2 Regarding the load we have:

Pout = (W )
RL
V O UT = V PEAK sin ωt (V)
For the same power supply voltage, the output
power in BTL configuration is four times higher and
than the output power in single ended
configuration. V OU T
I OU T = ----------------- (A)
RL
■ Gain In Typical Application Schematic
(cf. page 1)
and
In flat region (no effect of Cin), the output voltage VPEAK 2
of the first stage is : P O U T = ---------------------- (W)
2 RL
R fe ed
Vout1 = – Vin -------------------- (V) Then, the average current delivered by the supply
Rin
voltage is:
For the second stage : Vout2 = -Vout1 (V) VPEAK
I CC = 2 -------------------- (A)
AVG πR L
The differential output voltage is
Rfee d The power delivered by the supply voltage is
Vout2 – Vo ut1 = 2Vin -------------------- (V)
Rin Psupply = Vcc IccAVG (W)

The differential gain named gain (Gv) for more Then, the power dissipated by the amplifier is
convenient usage is : Pdiss = Psupply - Pout (W)
Vout2 – Vou t1 Rfee d 2 2 Vcc
G v = --------------------------------------- = 2 -------------------- P di ss = ---------------------- P OU T – P O UT (W)
Vin Rin π RL
Remark : Vout2 is in phase with Vin and Vout1 is
and the maximum value is obtained when:
180 phased with Vin. It means that the positive
terminal of the loudspeaker should be connected ∂Pdiss
---------------------- = 0
to Vout2 and the negative to Vout1. ∂P OU T
■ Low and high frequency response and its value is:
In low frequency region, the effect of Cin starts. 2 Vcc 2
Cin with Rin forms a high pass filter with a -3dB cut Pdiss max = (W)
π2RL
off frequency
1 Remark : This maximum value is only depending
F C L = -------------------------------- ( Hz )
2 π R in Cin on power supply voltage and load values.

In high frequency region, you can limit the The efficiency is the ratio between the output
15/19
TS4900

power and the power supply Moreover, Cb determines the speed that the
P O UT πV P E A K amplifier turns ON. The slower the speed is, the
η = ------------------------ = ----------------------- softer the turn ON noise is.
Psup ply 4V C C
The charge time of Cb is directly proportional to
The maximum theoretical value is reached when
the internal generator resistance 50kΩ.
Vpeak = Vcc, so
Then, the charge time constant for Cb is
π τb = 50kΩxCb (s)
----- = 78.5%
4 As Cb is directly connected to the non-inverting
■ Decoupling of the circuit input (pin 2 & 3) and if we want to minimize, in
amplitude and duration, the output spike on Vout1
Two capacitors are needed to bypass properly the (pin 5), Cin must be charged faster than Cb. The
TS4900, a power supply bypass capacitor Cs and charge time constant of Cin is
a bias voltage bypass capacitor Cb. τin = (Rin+Rfeed)xCin (s)

Cs has especially an influence on the THD+N in Thus we have the relation

high frequency (above 7kHz) and indirectly on the τin << τb (s)
power supply disturbances.
The respect of this relation permits to minimize the
With 100µF, you can expect similar THD+N
pop and click noise.
performances like shown in the datasheet.
Remark : Minimize Cin and Cb has a benefit on
If Cs is lower than 100µF, in high frequency
pop and click phenomena but also on cost and
increases, THD+N and disturbances on the power
size of the application.
supply rail are less filtered.
To the contrary, if Cs is higher than 100µF, those Example : your target for the -3dB cut off
disturbances on the power supply rail are more frequency is 100 Hz. With Rin=Rfeed=22 kΩ,
filtered. Cin=72nF (in fact 82nF or 100nF).
With Cb=1µF, if you choose the one of the latest
Cb has an influence on THD+N in lower frequency, two values of Cin, the pop and click phenomena at
but its function is critical on the final result of PSRR power supply ON or standby function ON/OFF will
with input grounded in lower frequency. be very small
50 kΩx1µF >> 44kΩx100nF (50ms >> 4.4ms).
If Cb is lower than 1µF, THD+N increase in lower
Increasing Cin value increases the pop and click
frequency (see THD+N vs frequency curves) and
phenomena to an unpleasant sound at power
the PSRR worsens up
supply ON and standby function ON/OFF.
If Cb is higher than 1µF, the benefit on THD+N in
lower frequency is small but the benefit on PSRR Why Cs is not important in pop and click
is substantial (see PSRR vs. Cb curve : fig.12). consideration ?
Note that Cin has a non-negligible effect on PSRR Hypothesis :
in lower frequency. Lower is its value, higher is the • Cs = 100µF
PSRR (see fig. 13). • Supply voltage = 5V
■ Pop and Click performance • Supply voltage internal resistor = 0.1Ω
• Supply current of the amplifier Icc = 6mA
Pop and Click performance is intimately linked
with the size of the input capacitor Cin and the bias At power ON of the supply, the supply capacitor is
voltage bypass capacitor Cb. charged through the internal power supply
resistor. So, to reach 5V you need about five to ten
Size of Cin is due to the lower cut-off frequency times the charging time constant of Cs (τs =
and PSRR value requested. Size of Cb is due to 0.1xCs (s)).
THD+N and PSRR requested always in lower Then, this time equal 50µs to 100µs << τb in the
frequency. majority of application.

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 TS4900

At power OFF of the supply, Cs is discharged by a ■ Remark on PSRR measurement conditions

constant current Icc. The discharge time from 5V
What is the PSRR ?
to 0V of Cs is
5Cs The PSRR is the Power Supply Rejection Ratio.
t D i s ch C s = -------------- = 83 ms It's a kind of SVR in a determined frequency range.
Icc
The PSRR of a device is the ratio between the
Now, we must consider the discharge time of Cb. power supply disturbance and the result on the
At power OFF or standby ON, Cb is discharged by output. We can say that the PSRR is the ability of
a 100kΩ resistor. So the discharge time is about a device to minimize the impact of power supply
τb Disch ≈ 3xCbx100kΩ (s). disturbances to the output.
In the majority of application, Cb=1µF, then
τbDisch≈300ms >> tdischCs. How do we measure the PSRR ?

Fig. B : PSRR measurement schematic

■ How to use the PSRR curves (page 7)
Rfeed
We have finished a design and we have chosen
the components values : Vripple 6

Vcc
Vcc
• Rin=Rfeed=22kΩ, Cin=100nF, Cb=1µF 4 Vin-
-
Vout1 5
Vs-
Now, on fig. 13, we can see the PSRR (input Rin 3 Vin+ +
grounded) vs frequency curves. At 217Hz we have
Cin RL
a PSRR value of -36dB.
In fact, we want a value of about -70dB. So, we -
Vout2 8
Av=-1 Vs+
need a gain of +34dB ! 2 Bypass +
Now, on fig. 12 we can see the effect of Cb on the Rg
100 Ohms 1 Standby
PSRR (input grounded) vs. frequency. With Bias

GND
Cb=100µF, we can reach the -70dB value.
TS4900
Cb
The process to obtain the final curve (Cb=100µF,
Cin=100nF, Rin=Rfeed=22kΩ) is a simple transfer
point by point on each frequency of the curve on ■ Measurement process:
fig. 13 to the curve on fig. 12.
• Fix the DC voltage supply (Vcc)
The measurement result is shown on figure A.
• Fix the AC sinusoidal ripple voltage (Vripple)
Fig. A : PSRR changes with Cb • No bypass capacitor Cs is used

The PSRR value for each frequency is :

PSRR ( d B ) = 20 x Log 10 R ms ( V r i p pl e )
---------------------------------------------
-30 Vcc = 5, 3.3 & 2.6V Rms ( Vs + - Vs - )
Rfeed = 22k, Rin = 22k
Cin=100nF Rg = 100Ω, RL = 8Ω
-40 Cb=1µF Tamb = 25°C Remark : The measurement of the RMS voltage is
not a selective RMS measurement but a full range
PSRR (dB)

-50 (2 Hz to 125 kHz) RMS measurement. This means

Cin=100nF
we have: the effective RMS signal + the noise.
-60 Cb=100µF

-70

10 100 1000 10000 100000

Frequency (Hz)

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TS4900

PACKAGE MECHANICAL DATA

8 PINS - PLASTIC MICROPACKAGE (SO)
L
c1

a3
C
a2

b1
b

a1
s

e3 E

D
M

8 5

1 4 F

Millimeters Inches
Dim.
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.020
c1 45° (typ.)
D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.150 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S 8° (max.)

18/19
 TS4900

PACKAGE MECHANICAL DATA

8 PINS - PLASTIC MICROPACKAGE (miniSO)
k

0,25mm
.010inch
c GAGEPLANE

L1
E1

SEATING
PLANE
C
A E
A2
A1
5 4
D

e
b

ccc C

8 1

PIN1IDENTIFICA TION

Dim. Millimeters Inches

Min. Typ. Max. Min. Typ. Max.
A 1.100 0.043
A1 0.050 0.100 0.150 0.002 0.004 0.006
A2 0.780 0.860 0.940 0.031 0.034 0.037
b 0.250 0.330 0.400 0.010 0.013 0.016
c 0.130 0.180 0.230 0.005 0.007 0.009
D 2.900 3.000 3.100 0.114 0.118 0.122
E 4.750 4.900 5.050 0.187 0.193 0.199
E1 2.900 3.000 3.100 0.114 0.118 0.122
e 0.650 0.026
L 0.400 0.550 0.700 0.016 0.022 0.028
L1 0.950 0.037
k 0d 3d 6d 0d 3d 6d
ccc 0.100 0.004

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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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