2N7000

N-Channel Enhancement-Mode
Vertical DMOS FETs
Features General Description
► Free from secondary breakdown The Supertex 2N7000 is an enhancement-mode (normally-
► Low power drive requirement off) transistor that utilizes a vertical DMOS structure
► Ease of paralleling and Supertex’s well-proven silicon-gate manufacturing
► Low CISS and fast switching speeds process. This combination produces a device with the
► Excellent thermal stability power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
► Integral Source-Drain diode
inherent in MOS devices. Characteristic of all MOS
► High input impedance and high gain
structures, this device is free from thermal runaway and
► Complementary N- and P-Channel devices
thermally-induced secondary breakdown.
Applications
Supertex’s vertical DMOS FETs are ideally suited to a
► Motor controls wide range of switching and amplifying applications where
► Converters very low threshold voltage, high breakdown voltage, high
► Amplifiers input impedance, low input capacitance, and fast switching
► Switches speeds are desired.
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)

Ordering Information
BVDSS/BVDGS RDS(ON) ID(ON)
Device Package (max) (min)
(V)
(Ω) (mA)

2N7000
TO-92 60 5.0 75
2N7000-G
-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings Pin Configuration

Parameter Value
Drain to source voltage BVDSS
Drain to gate voltage BVDGS
Gate to source voltage ±30V
Operating and storage temperature -55°C to +150°C
1
Soldering temperature +300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous S G D
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground. TO-92
Notes: (front view)
1. Distance of 1.6mm from case for 10 seconds.
 2N7000

Electrical Characteristics (T = 25°C unless otherwise specified)

A

Symbol Parameter Min Typ Max Units Conditions

BVDSS Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 10µA
VGS(th) Gate threshold voltage 0.8 - 3.0 V VGS = VDS, ID = 1.0mA
IGSS Gate body leakage current - - 10 nA VGS = ±15V, VDS = 0V
- - 1.0 µA VGS = 0V, VDS = 48V
IDSS Zero gate voltage drain current VGS = 0V, VDS = 48V,
- - 1.0 mA
TA = 125OC
ID(ON) ON-state drain current 75 - - mA VGS = 4.5V, VDS = 10V

Static drain-to-source - - 5.3 VGS = 4.5V, ID = 75mA

RDS(ON) Ω
ON-state resistance - - 5.0 VGS = 10V, ID = 500mA
GFS Forward transconductance 100 - - mmho VDS = 10V, ID = 200mA
CISS Input capacitance - - 60
VGS = 0V, VDS = 25V,
COSS Common source output capacitance - - 25 pF
f = 1.0MHz
CRSS Reverse transfer capacitance - - 5
t(ON) Turn-ON time - - 10 VDD = 15V, ID = 500mA,
ns
t(OFF) Turn-OFF time - - 10 RGEN = 25Ω

VSD Diode forward voltage drop - 0.85 - V VGS = 0V, ISD = 200mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.

Thermal Characteristics
ID ID Power Dissipation
θJC θJA IDR* IDRM
Device Package (continuous)* (pulsed) @TC = 25OC O O
( C/W) ( C/W) (mA) (mA)
(mA) (mA) (W)

2N7000 TO-92 200 500 1.0 125 170 200 500

Notes:
* ID (continuous) is limited by max rated TJ.

Switching Waveforms and Test Circuit VDD

10V
90%
RL
INPUT PULSE
0V 10% GENERATOR
OUTPUT
t(ON) t(OFF)
RGEN
td(ON) tr td(OFF) tF

VDD
10% 10% D.U.T.
OUTPUT INPUT

0V 90% 90%

2
 2N7000

Typical Performance Curves

Output Characteristics Saturation Characteristics
2.5 2.5
VGS =10V

VGS = 10V
2.0 8V 2.0

8V
ID (amperes)

1.5 1.5

ID (amperes)
6V
6V

1.0 1.0

0.5 4V 0.5 4V

0 0
0 10 20 30 40 50 0 2 4 6 8 10
VDS (volts) VDS (volts)

Transconductance vs. Drain Current Power Dissipation vs. Case Temperature

1.0 2.0

VDS = 25V
0.8
GFS (siemens)

0.6
PD (watts)

TO-92
1.0
TA = -55OC
0.4 25OC

125OC
0.2

0 0
0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150
ID (amperes) TC (OC)

Maximum Rated Safe Operating Area Thermal Response Characteristics

1.0 1.0
Thermal Resistance (normalized)

TO-92 (pulsed)
0.8
TO-92 (DC)
0.1
ID (amperes)

0.6

0.4
0.01

TO-92
0.2
PD = 1W
O
TC = 25 C
TC = 25OC
0.001 0
0.1 1.0 10 100 0.001 0.01 0.1 1 10
VDS (volts) tp (seconds)

3
 2N7000

Typical Performance Curves (cont.)

BVDSS Variation with Temperature On-Resistance vs. Drain Current
5.0

1.1
VGS = 4.5V
4.0
BVDSS (normalized)

RDS(ON) (ohms)
VGS = 10V
3.0

1.0

2.0

1.0

0.9

0
-50 0 50 100 150 0 0.5 1.0 1.5 2.0 2.5
Tj ( OC) ID (amperes)

Transfer Characteristics V(th) and RDS Variation with Temperature

2.5 1.6 1.9
VDS = 25V

O
2.0 TA = -55  C 1.4 1.6
RDS @ 10V, 1.0A

RDS(ON) (normalized)
VGS(th) (normalized)

O
25 C
ID (amperes)

1.2 1.3
1.5
O V(th) @ 1mA
125 C

1.0 1.0
1.0

0.8 0.7
0.5

0 0.6 0.4
0 2 4 6 8 10 -50 0 50 100 150
VGS (volts) Tj(O C)

Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics

100 10

f = 1MHz
VDS = 10V
8
75 40V
C (picofarads)

VGS (volts)

50
80 pF
4
CISS

25 COSS
2

CRSS 40 pF
0 0
0 10 20 30 40 0 0.2 0.4 0.6 0.8 1.0
VDS (volts) QG (nanocoulombs)

4
 2N7000

TO-92 Package Outline

0.135 MIN

0.125 - 0.165

0.080 - 0.105 1
3
2
Bottom View
0.175 - 0.205

0.170 - 0.210

1 2 3
Seating Plane

0.500 MIN
0.014 - 0.022

0.014 - 0.022
0.045 - 0.055

0.095 - 0.105

Front View Side View

Notes:
All dimensions are in millimeters; all angles in degrees.

(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)

Doc.# DSFP-2N7000
A042507
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