TN0606

N-Channel Enhancement-Mode
Vertical DMOS FET
Features General Description
► Low threshold - 2.0V max. This low threshold, enhancement-mode (normally-off)
► High input impedance transistor utilizes a vertical DMOS structure and Supertex’s
► Low input capacitance - 100pF typical well-proven, silicon-gate manufacturing process. This
► Fast switching speeds combination produces a device with the power handling
capabilities of bipolar transistors and the high input
► Low on-resistance
impedance and positive temperature coefficient inherent
► Free from secondary breakdown in MOS devices. Characteristic of all MOS structures, this
► Low input and output leakage device is free from thermal runaway and thermally-induced
secondary breakdown.
Applications
Supertex’s vertical DMOS FETs are ideally suited to a
► Logic level interfaces – ideal for TTL and CMOS wide range of switching and amplifying applications where
► Solid state relays very low threshold voltage, high breakdown voltage, high
► Battery operated systems input impedance, low input capacitance, and fast switching
► Photo voltaic drives speeds are desired.
► Analog switches
► General purpose line drivers
► Telecom switches

Ordering Information
Package Option RDS(ON) ID(ON) VGS(th)
BVDSS/BVDGS
Device (max) (min) (max)
TO-92 (V)
(Ω) (A) (V)
TN0606 TN0606N3-G 60 1.5 3.0 2.0
-G indicates package is RoHS compliant (‘Green’)

Pin Configuration

DRAIN
SOURCE
Absolute Maximum Ratings
Parameter Value GATE

Drain-to-source voltage BVDSS TO-92 (N3)

Drain-to-gate voltage BVDGS

Product Marking
Gate-to-source voltage ±20V
SiTN YY = Year Sealed
Operating and storage temperature -55OC to +150OC
0 6 0 6 WW = Week Sealed
Soldering temperature* 300 C O
YYWW = “Green” Packaging
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous Package may or may not include the following marks: Si or
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground. TO-92 (N3)
* Distance of 1.6mm from case for 10 seconds.

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

This datasheet has been downloaded from http://www.digchip.com at this page
 TN0606

Thermal Characteristics
ID ID Power Dissipation θjc θja IDR† IDRM
Package (continuous)† (pulsed) @TC = 25OC
( C/W)
O
( C/W)
O
(mA) (A)
(mA) (A) (W)

TO-92 500 3.2 1.0 125 170 500 3.2

Notes:
† ID (continuous) is limited by max rated Tj .

Electrical Characteristics (T A
= 25OC unless otherwise specified)

Sym Parameter Min Typ Max Units Conditions

BVDSS †
Drain-to-source voltage 60 - - V VGS = 0V, ID = 1.0mA
VGS(th) Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID= 1.0mA
ΔVGS(th) Change in VGS(th) with temperature - - -4.5 mV/OC VGS = VDS, ID= 1.0mA
IGSS Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V
- - 10 µA VGS = 0V, VDS = Max Rating
IDSS Zero gate voltage drain current VDS = 0.8 Max Rating,
- - 1.0 mA
VGS = 0V, TA = 125°C
1.2 2.0 - VGS = 5.0V, VDS = 25V
ID(ON) On-state drain current A
3.0 6.7 - VGS = 10V, VDS = 25V
- - 15 VGS = 3.0V, ID = 250mA
RDS(ON) Static drain-to-source on-state resistance - 1.5 2.0 Ω VGS = 5.0V, ID = 750mA
- 1.0 1.5 VGS = 10V, ID = 750mA
ΔRDS(ON) Change in RDS(ON) with temperature - - 0.75 %/OC VGS = 10V, ID = 750mA
GFS Forward transductance 400 500 - mmho VDS = 25V, ID = 1.0A
CISS Input capacitance - 100 150 VGS = 0V,
COSS Common source output capacitance - 50 85 pF VDS = 25V,
CRSS Reverse transfer capacitance - 10 35 f = 1.0MHz

td(ON) Turn-on delay time - - 6

VDD = 25V,
tr Rise time - - 14
ns ID = 1.5A,
td(OFF) Turn-off delay time - - 16
RGEN = 25Ω
tf Fall time - - 16
VSD Diode forward voltage drop - 0.8 1.8 V VGS = 0V, ISD = 1.5A
trr Reverse recovery time - 300 - ns VGS = 0V, ISD = 1.5A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit VDD

10V
90%
RL
INPUT PULSE
0V 10% GENERATOR
OUTPUT
t(ON) t(OFF)
RGEN
td(ON) tr td(OFF) tF

VDD
10% 10% D.U.T.
OUTPUT INPUT

0V 90% 90%

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

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 TN0606

Typical Performance Curves

Output Characteristics Saturation Characteristics
10 10

8 8
VGS =
10V
ID (amperes)

6 6 VGS =

ID (amperes)
9V 10V
9V
8V 8V
4 4
7V 7V
6V 6V

2 5V 2 5V
4V
3V 3V

0 0
0 10 20 30 40 50 1 2 4 6 8 10
VDS (volts) VDS (volts)

Transconductance vs. Drain Current Power Dissipation vs. Case Temperature

1.0 2.0

VDS = 25V

0.8
GFS (siemens)

0.6
TA = -55°C
PD (watts)

TO-92
1.0
TA = 25°C
0.4
TA = 150°C

0.2

0 0
1 2 4 6 8 10 0 25 50 75 100 125 150
ID (amperes) TC (° C)

Maximum Rated Safe Operating Area Thermal Response Characteristics

10 1.0
Thermal Resistance (normalized)

0.8

1.0
ID (amperes)

0.6

0.4
0.1
TO-92 (DC)

0.2 TO-92
TC = 25°C
P D = 1W
T C = 25°C
0.01 0
1 10 100 1000 0.001 0.01 0.1 1 10
VDS (volts) tp (seconds)

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

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 TN0606

Typical Performance Curves (cont.)

BVDSS Variation with Temperature On-Resistance vs. Drain Current
1.1 5

V GS = 5V
4
BVDSS (normalized)

RDS(ON) (ohms)
3
VGS = 10V
1.0

0.9 0
-50 0 50 100 150 0 2 4 6 8 10
Tj (OC) ID (amperes)

Transfer Characteristics V(th) and RDS Variation with Temperature

10 2.0

1.4
VDS = 25V TA = -55 OC
8 1.6
V (th)@ 1mA

RDS(ON) (normalized)
VGS(th) (normalized)

1.2
25OC
ID (amperes)

6 1.2

1.0 RDS @ 10V, 0.75A

4 0.8

0.8
150OC
2 0.4

0.6

0 0
0 2 4 6 8 10 -50 0 50 100 150
VGS (volts) Tj ( OC)

Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics

200 10

f = 1MHz
VDS = 10V
8
150
C (picofarads)

6 VDS = 40V
VGS (volts)

CISS
100
172 pF
4

COSS
50
2

CRSS 95 pF
0 0
0 10 20 30 40 0 0.5 1.0 1.5 2.0 2.5
VDS (volts) QG (nanocoulombs)

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

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 TN0606

3-Lead TO-92 Package Outline (N3)

D

Seating Plane 1 2 3

b c
e1
e

Front View Side View

E
E1
1 3

2
Bottom View

Symbol A b c D E E1 e e1 L
MIN .170 .014 †
.014 †
.175 .125 .080 .095 .045 .500
Dimensions
NOM - - - - - - - - -
(inches)
MAX .210 .022 †
.022 †
.205 .165 .105 .105 .055 .610*
JEDEC Registration TO-92.
* This dimension is not specified in the original JEDEC drawing. The value listed is for reference only.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version D080408.

(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com.

©2009 All rights reserved. Unauthorized use or reproduction is prohibited.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Doc.# DSFP-TN0606 Tel: 408-222-8888
A022309 www.supertex.com
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