Scribd
Upload
28 views

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the 2SC3693 silicon NPN power transistor from SavantIC Semiconductor. It includes details on the transistor's applications, pinning, absolute maximum ratings, characteristics, and package outline. The transistor is in a TO-220Fa package and is suitable for use in DC/DC converters and actuators due to its large current and high speed capabilities with low collector saturation voltage. Key specifications include a collector current rating of 10A peak, collector-emitter sustaining voltage of 60V, and transition frequency of 140MHz.

Uploaded by

serrano.flia.co
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
28 views

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the 2SC3693 silicon NPN power transistor from SavantIC Semiconductor. It includes details on the transistor's applications, pinning, absolute maximum ratings, characteristics, and package outline. The transistor is in a TO-220Fa package and is suitable for use in DC/DC converters and actuators due to its large current and high speed capabilities with low collector saturation voltage. Key specifications include a collector current rating of 10A peak, collector-emitter sustaining voltage of 60V, and transition frequency of 140MHz.

Uploaded by

serrano.flia.co
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3693

DESCRIPTION
·With TO-220Fa package
·Large current ,high speed
·Low collector saturation voltage

APPLICATIONS
·For use in drivers such as DC/DC
converters and actuators

PINNING

PIN DESCRIPTION

1 Base

2 Collector

3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 100 V

VCEO Collector-emitter voltage Open base 60 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 10 A

ICM Collector current-peak 20 A

IB Base current 5.0 A

Ta=25 2
PT Total power dissipation W
TC=25 30

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3693

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=6A; IB=0.6A,L=1mH 60 V

VCEsat-1 Collector-emitter saturation voltage IC=6A; IB=0.3A 0.3 V

VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=0.4A 0.5 V

VBEsat-1 Base-emitter saturation voltage IC=6A; IB=0.3A 1.2 V

VBEsat-2 Base-emitter saturation voltage IC=8A; IB=0.4A 1.5 V

ICBO Collector cut-off current VCB=60V; IE=0 10 µA

VCE=60V; VBE=-1.5V 10 µA
ICEX Collector cut-off current
Ta=125 1.0 mA

IEBO Emitter cut-off current VEB=5V; IC=0 10 µA

hFE-1 DC current gain IC=1A ; VCE=2V 100

hFE-2 DC current gain IC=2A ; VCE=2V 100 200 400

hFE-3 DC current gain IC=6A ; VCE=2V 60

COB Output capacitance IE=0; VCB=10V;f=1MHz 150 pF

fT Transition frequency IC=1.0A ; VCE=10V 140 MHz

Switching times

ton Turn-on time 0.3 µs


IC=6A;RL=8.3D
ts Storage time IB1=-IB2=0.3A 1.5 µs
VCCE50V
tf Fall time 0.3 µs

hFE-2 classifications
M L K

100-200 150-300 200-400

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3693

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

You might also like