SEMICONDUCTOR 2N60 Series RoHS

RoHS
Nell High Power Products

N-Channel Power MOSFET

(2A, 600Volts)

DESCRIPTION
The Nell 2N60 is a three-terminal silicon D D
device with current conduction capability
of 2A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
G
They are designed for use in applications such S
as switched mode power supplies, DC to DC G
converters, PWM motor controls, bridge circuits D
S
and general purpose switching applications. TO-251 (I-PAK) TO-252 (D-PAK)
(2N60F) (2N60G)

D
FEATURES
RDS(ON) = 5.0Ω@VGS = 10V
Ultra low gate charge(11nC max.)
Low reverse transfer capacitance G GD
(C RSS = 5pF typical) D S
S
Fast switching capability
TO-220AB TO-220F
100% avalanche energy specified
(2 N60A ) (2N60AF)
Improved dv/dt capability
150°C operation temperature

D (Drain)

PRODUCT SUMMARY
ID (A) 2
VDSS (V) 600
RDS(ON) (Ω) 5.0 @ V GS = 10V G
(Gate)
QG(nC) max. 11

S (Source)

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 SEMICONDUCTOR 2N60 Series RoHS
RoHS
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ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS VALUE UNIT
VDSS Drain to Source voltage T J =25°C to 150°C 600
V DGR Drain to Gate voltage R GS =20KΩ 600 V

V GS Gate to Source voltage ±30

T C =25°C 2
ID Continous Drain Current
T C =100°C 1.24
A
I DM Pulsed Drain current(Note 1) 8
I AR Avalanche current(Note 1 ) 2

E AR Repetitive avalanche energy(Note 1 ) I AR =2A, R GS =50Ω, V GS =10V 4.5

mJ
E AS Single pulse avalanche energy (Note 2 ) I AS =2A, L = 64mH 140

dv/dt Peak diode recovery dv/dt(Note 3) 4.5 V /ns

TO-251/ TO-252 44
PD Total power dissipation T C =25°C TO-220AB 54 W

TO-220F 23

TJ Operation junction temperature -55 to 150

T STG Storage temperature -55 to 150 ºC

TL Maximum soldering temperature, for 10 seconds 1.6mm from case 300

Mounting torque, #6-32 or M3 screw 10 (1.1) lbf . in (N . m)

Note: 1. Repetitive rating: pulse width limited by junction temperature.

2 . I AS = 2 A, V DD = 50V, L = 64mH, R GS = 25Ω, starting T J =25°C.
3 . I SD ≤ 2.4 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J =25°C.

THERMAL RESISTANCE
SYMBOL PARAMETER Min. Typ. Max. UNIT

TO-251/ TO-252 2.9

Rth(j-c) Thermal resistance, junction to case TO-220AB 2.35

TO-220F 5.5
ºC/W
TO-251/TO-252 100
Rth(j-a) Thermal resistance, junction to ambient TO-220AB 62.5

TO-220F 62.5

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 SEMICONDUCTOR 2N60 Series RoHS
RoHS
Nell High Power Products

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT

V(BR)DSS Drain to Source breakdown voltage I D =250µA,V GS =0V 600 V

∆V (BR)DSS /∆T J Breakdown voltage temperature coefficient I D =250µA,V DS =V GS 0.4 V/°C

V DS =600V, V GS =0V T C =25°C 10
I DSS Drain to source leakage current µA
V DS =480V, V GS =0V T C =125°C 100
Gate to source forward leakage current V GS =30V,V DS =0V 100
I GSS nA
Gate to source forward leakage current V GS =-30V,V DS =0V -100
R DS(ON) Static drain to source on-state resistance I D =1.0A,V GS =10V 3.5 5 Ω

V GS(TH) Gate threshold voltage V GS =V DS ,I D =250µA 2.0 4 V

C ISS Input capacitance 270 350

C OSS Output capacitance V DS =25A, V GS =0V, f=1MHZ 40 50 pF

C RSS Reverse transfer capacitance 5.5 7

t d(ON) Turn-on delay time 10 30

tr Rise time V DD =300V, V GS =10V, 25 60

I D =2.4A, R GS =25Ω (Note 1, 2) ns
t d(OFF) Turn-off delay time 20 50

tf Fall time 25 60

QG Total gate charge 9 11

V DD =480V,V GS =10V,
Q GS Gate to source charge I D =2.4A (Note 1,2) 1.5 uC
Q GD Gate to drain charge (Miller cgarge) 4.5

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT

VSD Diode forward voltage I SD = 2A, V GS = 0V 1.4 V

Is (Is D ) Continuous source to drain current Integral reverse P-N junction 2

diode in the MOSFET
D (Drain)

A
I SM Pulsed source current 8
G
(Gate)

S (Source)

t rr Reverse recovery time I SD = 2.4A, V GS = 0V, 180 ns

dI F /dt = 100A/µs
Q rr Reverse recovery charge 0.7 µC

Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

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 SEMICONDUCTOR 2N60 Series RoHS
RoHS
Nell High Power Products

ORDERING INFORMATION SCHEME

2 N 60 A

Current rating, ID
2 = 2A

MOSFET series
N = N-Channel

Voltage rating, VDS

60 = 600V

Package type
A = TO-220AB
AF = TO-220F
F = TO-251(I-PAK)
G = TO-252(D-PAK)

■ TEST CIRCUITS AND WAVEFORMS

Fig.1A Peak diode recovery dv/dt test circuit Fig.1B Peak diode recovery dv/dt waverforms

D.U.T. + V GS Period
P.W.
(Driver.) P.W. D=
Period
V DS
V GS =10V
-
l FM , Body Diode forward current
+ l SD
(D.U.T.) di/dt
- L
l RM

Body Diode Reverse Current

RG
Body Diode Recovery dv/dt
Driver V DD V DS
* dv/dt controlled by R G (D.U.T.)
Same Type * l SD controlled by pulse period V DD
V GS * D.U.T.-Device under test
as D.U.T.

Body Diode Forward Voltage Drop

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 SEMICONDUCTOR 2N60 Series RoHS
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Nell High Power Products

■ TEST CIRCUITS AND WAVEFORMS (Cont.)

Fig.2A Switching test circuit Fig.2B Switching Waveforms

RL V DS
V DS 90%

V GS

RG

V DD
D.U.T. 10%
V GS
10V t d(ON) t d(OFF)
Pulse Width ≤ 1µs tR
Duty Factor ≤ 0.1% tF

Fig.3A Gate charge test circuit Fig.3B Gate charge waveform

V GS

Same Type as
50kΩ QG
D.U.T.
12V
10V
0.2µF 0.3µF

V DS
Q GS Q GD

V GS
D.U.T.

3mA

Charge

Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching
waveforms

L
V DS

BV DSS

l AS

RG V DD
l D(t)
V DS(t)
D.U.T. V DD
10V

tp
Time
tp

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 SEMICONDUCTOR 2N60 Series RoHS
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■ TYPICAL CHARACTERISTICS

Fig.1 Drain current vs. Drain-source breakdown Fig.2 Drain current vs. gate threshold
voltage voltage

300 300

250 250
Drain Current, l D (µA)

Drain current, l D (µA)

200 200

150 150

100 100

50 50

0 0
0 200 400 600 800 1000 0 0.5 1 1.5 2 2.5 3 3.5 4

Drain-source breakdown voltage, BV DSS (V) Gate threshold voltage, V GS(TH) (V)

Fig.3 Drain-source on-state resistance Fig.4 Drain current vs. source-drain

characteristics voltage
Continuous source-drain current, l SD (A)

1.2 2.5

1.0 2.0
Drain Current,I D (A)

0.8
1.5

0.6
1.0
0.4

0.5
0.2

0 0
0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 1.2

Drain to source voltage, V DS (V) Source to drain voltage, V SD (V)

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 SEMICONDUCTOR 2N60 Series RoHS
RoHS
Nell High Power Products
Case Style

TO-251
(I-PAK) 6.6(0.26) 2.4(0.095)
6.4(0.52) 2.2(0.086)
1.5(0.059) 0.62(0.024)
5.4(0.212)
1.37(0.054) 0.48(0.019)
5.2(0.204)

6.2(0.244)
6(0.236)

16.3(0.641)
15.9(0.626)

1.9(0.075)
9.4(0.37)
1.8(0.071)
9(0.354)

0.85(0.033)
0.65(0.026)
0.76(0.03)
0.55(0.021)
4.6(0.181) 0.62(0.024)
4.4(0.173) 0.45(0.017)

TO-252
(D-PAK)
2.4(0.095)
6.6(0.259) 2.2(0.086)
6.4(0.251)

5.4(0.212) 1.5(0.059)
0.62(0.024)
5.2(0.204) 1.37(0.054) 0.48(0.019)
2

6.2(0.244)
9.35(0.368) 6(0.236)
10.1(0.397)
1 2 3

0.89(0.035)
0.64(0.025) 0.62(0.024)
1.14(0.045) 0.45(0.017)
0.76(0.030)
2.28(0.090)

4.57(0.180)

TO-220AB
10.54 (0.415) MAX.

9.40 (0.370) 3.91 (0.154) 4.70 (0.185)

9.14 (0.360) 3.74 (0.148) 4.44 (0.1754)
1.39 (0.055)
2.87 (0.113)
1.14 (0.045)
2.62 (0.103)

3.68 (0.145)
3.43 (0.135)
16.13 (0.635) 15.32 (0.603)
15.87 (0.625) 14.55 (0.573)
PIN 8.89 (0.350)
1 2 3 8.38 (0.330)
4.06 (0.160) 29.16 (1.148)
3.56 (0.140) 28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045) 14.22 (0.560)
D (Drain)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095) 0.90 (0.035)
2.65 (0.104) 0.70 (0.028)
5.20 (0.205) 0.56 (0.022)
2.45 (0.096)
4.95 (0.195) 0.36 (0.014) G
(Gate)

S (Source)
All dimensions in millimeters(inches)

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 SEMICONDUCTOR 2N60 Series RoHS
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Case Style

TO-220F

10.6
10.4 3.4
3.1

2.8
2.6

3.7
3.2 7.1
6.7

16.0
15.8
16.4
15.4 2
1 3 10°
3.3
3.1

13.7
13.5

0.9 0.48
2.54 0.7 0.44
TYP 2.54
2.85
TYP
2.65

4.8
4.6

D (Drain)

G
(Gate)

S (Source)

All dimensions in millimeters

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