Investigation of Transistor Characteristics Common Emitter Circuit

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EXPT 2: INVESTIGATION OF TRANSISTOR CHARACTERISTICS

COMMON EMITTER CIRCUIT


Is1
100mA

micro A
Q1
NPN

500k 40%
+ + V2
Vs1 R3
9V
0V 10k 40%
-
2.2k

+ V1
20v

Fig 80a

Apparatus
Transistor n-p-n (e.g. BC108) or similar variable resistances (Potentiometers) or 500
and 10kΩ respectively; 2.2kΩ resistor; batteries providing about 20V and 9V
respectively; high- resistance voltmeter V; micro ammeter A 0-100μA, milliammeter
D 0-50mA.

Method
1.
Before starting, make sure your transistor is an n-p-n type, i.e. the emitter E is
n-type, the base B is p-type and the collector C is n-type semiconductor (see
note below if you have a p-n-p transistor). Starting with the larger battery X,
connect its negative pole to the base terminal B, with the 2.2k, 500k variable
resistors and the micro ammeter A all in series as shown.
Connect the smaller battery Y across the whole of the 10k variable resistor
join the voltmeter V across the slider and one fixed terminal of the resistor so
as to measure a variable p.d. Connect the positive side of the variable p.d. to
the collector terminal C through the milliammeter D and the negative side of
the variable p.d. to the emitter terminal E. Before starting, check again that the
positive side of the variable p.d. is joined to C and that the emitter E is
connected to the negative terminals of the batteries X and Y.
(Note: If a p-n-p type transistor is used the battery connections shown in
Fig.80a must be reversed, i.e. the base B is negative in potential relative to E
and C is negative relative to E).
2.
Output characteristic (Ic-Vc, Ib constant). Keeping the base current Ib, constant
at 20μA, vary the potential Vc of the collector in suitable steps from zero to
about maximumV. Take a few readings in the 0-1V range. Observe the
collector current Ic in D and the corresponding voltage Vc on each occasion. If
necessary, adjust the 500k to keep the base current constant. Repeat with
constant base current of 30, 40, 50, 60 and 80mA respectively.
3.
Transfer characteristic. (Ic – Ib, Vc constant.) By means of the potential
divider, adjust the collector voltage Vc to about 4.5V. With V constant,
increase the base current Ib in suitable steps by altering the 500kΩ resistor and
observe the corresponding collector current, Ic, until it reaches about 40 or
450mA or other suitable value.

Measurements
Ib =…μA

Output characteristics Vc/V


Ic/mA

Rep
Vc =…V
Transfer characteristics Ib/μA
Ic/mA

Plot
I. IcV.Vc (Ib constant) (Fig.80b (i))
II. IcV.Ib (Vc constant) Fig.80b (ii)
Graphs
Ic
Ic
Fig 80b Input characteristics Transfer characteristics
ΔIc
Calculations
1.
From the slope of the straight-line part of the graph beyond the knee of the
graph, calculate the output impedance, R, for two different values of Ib from
Ro = ΔVc / ΔIc (Ib constant) (Fig. 80b (i)).
ΔIb
Output impedance = …
2.
From the Ic – Ib graph, calculate the current gain, ΔIc / ΔIb, for Ic = 30mA
O from the gradient of the line here (Fig.80b O (ii)).
Vc Ib

Current gain =…=…at Ic =…mA

Conclusions
The output impedance of the common emitter circuit =…Ω
The current gain of the common emitter circuit =…at Ic = …mA

Problems
1. From the Ic-Ib graph, find the variation of current gain with collector current
Ic for a range of collector current from about 5 to 40mA.Plot the current gain
V.Ic and comment on your result.
2. Investigate the effect of temperature rise of a transistor on the collector
current, for a given base current, for example by holding the transistor in the
hand.

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