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D1878

The document provides product specifications for the SavantIC Semiconductor 2SD1878 silicon NPN power transistor. It includes: - Description of the TO-3PML packaged transistor with high speed, high breakdown voltage, and built-in damper diode capabilities. - Applications in color TV and display horizontal deflection output circuits. - Pinout diagram and outline dimensions of the TO-3PML package. - Absolute maximum and characteristic ratings tables specifying electrical parameter limits and typical values. - Package outline drawing showing physical dimensions.

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Catalin Pancescu
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535 views4 pages

D1878

The document provides product specifications for the SavantIC Semiconductor 2SD1878 silicon NPN power transistor. It includes: - Description of the TO-3PML packaged transistor with high speed, high breakdown voltage, and built-in damper diode capabilities. - Applications in color TV and display horizontal deflection output circuits. - Pinout diagram and outline dimensions of the TO-3PML package. - Absolute maximum and characteristic ratings tables specifying electrical parameter limits and typical values. - Package outline drawing showing physical dimensions.

Uploaded by

Catalin Pancescu
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
Download as pdf or txt
Download as pdf or txt
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1878

DESCRIPTION
·With TO-3PML package
·High speed
·High breakdown voltage
·High reliability
·Built in damper diode

APPLICATIONS
·Color TV horizontal deflection output
·Color display horizontal deflection output.

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3PML) and symbol
3 Emitter

Absolute maximum ratings(Ta= )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 5 A

ICM Collector current-peak 20 A

PC Collector power dissipation TC=25 60 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1878

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 800 V

VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 5.0 V

VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V

ICBO Collector cut-off current VCB=800V ;IE=0 10 µA

IEBO Emitter cut-off current VEB=4V;IC=0 40 130 mA

ICES Collector cut-off current VCE=1500V 1.0 mA

hFE-1 DC current gain IC=1A ; VCE=5V 8

hFE-2 DC current gain IC=4A ; VCE=5V 5 10

VF Diode forward voltage IEC=5A ; 2 V

IC=4A;RL=66.7@;VCC=200V
tf Fall time 0.1 0.3 µs
IB1=0.8A; IB2=-1.6A

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1878

PACKAGE OUTLINE

Fig.2 Outline dimensions

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1878

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