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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the SavantIC Semiconductor 2SD1880 silicon NPN power transistor. The transistor is in a TO-3PML package and is suitable for applications such as color TV and display horizontal deflection output due to its high speed, high breakdown voltage, and built-in damper diode. Key specifications include an 800V collector-emitter sustaining voltage, 5V collector-emitter saturation voltage at 6A collector current, and 0.1-0.3us fall time. The document outlines maximum ratings, electrical characteristics, and package outline dimensions.

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Iee Jimmy Zambrano L
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34 views

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the SavantIC Semiconductor 2SD1880 silicon NPN power transistor. The transistor is in a TO-3PML package and is suitable for applications such as color TV and display horizontal deflection output due to its high speed, high breakdown voltage, and built-in damper diode. Key specifications include an 800V collector-emitter sustaining voltage, 5V collector-emitter saturation voltage at 6A collector current, and 0.1-0.3us fall time. The document outlines maximum ratings, electrical characteristics, and package outline dimensions.

Uploaded by

Iee Jimmy Zambrano L
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1880

DESCRIPTION
With TO-3PML package
High speed
High breakdown voltage
High reliability
Built in damper diode

APPLICATIONS
Color TV horizontal deflection output
Color display horizontal deflection output.

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3PML) and symbol
3 Emitter

Absolute maximum ratings(Ta= )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 8 A

ICM Collector current-peak 30 A

PC Collector power dissipation 70 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1880

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 800 V

VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 5 V

VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.5 V

ICBO Collector cut-off current VCB=800V ;IE=0 10 A

IEBO Emitter cut-off current VEB=4V ;IC=0 40 130 mA

ICES Collector cut-off current VCE=1500V 1.0 mA

hFE-1 DC current gain IC=1A ; VCE=5V 8

hFE-2 DC current gain IC=6A ; VCE=5V 5 10

VF Diode forward voltage IEC=8A 2 V

IC=6A;RL=33.3@
tf Fall time 0.1 0.3 s
IB1=1.2A IB2=-2.4A;VCC=200V

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1880

PACKAGE OUTLINE

Fig.2 Outline dimensions

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1880

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