Mosfet Review and Short Channel Effects in Fets: Outline
Mosfet Review and Short Channel Effects in Fets: Outline
Mosfet Review and Short Channel Effects in Fets: Outline
and
Short channel effects in FETs
With current channel lengths of
120/45 nm and industry pushing
towards 32 nm, classical approaches
to describe the functioning of the
devices are not good enough.
Outline
Some history
Basic transport equations
MOSFET theory – review
Currents derived from the inversion charge QI
Expression for the threshold voltage
Why downscale the MOSFET?
Short channel effects
Other parameters that influence the behaviour
1
Timeline
1930 1940 1950 1960 1970
Timeline
1930 1940 1950 1960 1970 2000
2
Remember definitions:
dn( x )
J n ( x ) = eµ n n( x ) E ( x ) + eDn
dx
dp( x)
J p ( x ) = eµ p p( x) E ( x) − eD p
dx
J tot = J n + J p
d
ε ( x ) E ( x ) = qρ ( x )
dx
d
dx
ε ( x)
dV ( x)
dx
(
= e ND +
( x) − N A− ( x) + p( x) − n( x) )
3
3rd fundamental relationship is:
Carrier neutrality
SiO2
n+ n+
p-Si
pn junction
Bulk (substrate)
np junction
4
MOSFET control of gate
SiO2
n+ n+
p-Si
Inversion region
φm=φs Depletion region
Inversion
hh+++
VGSV>0
GS M O n h p-Si
ddeplmax
Ecox
Ecs equilibrium
Depleting
V > Vth p-Si
GS =
Inversion
Onset of inversion
E
EF
EFm
Fm
EFm Evs
EFm
Evox
MOSFET control of gate
5
Field effect
• Channel is NOT created by injection of carriers
via the 3rd contact but is created by the attraction-
repulsion of charges via an electric field
• Control of enhancement and depletion of the
carriers in the channel via capacitive effect
• Current through 3rd contact very very small
IG≈0.
V <V V =V V >V
G GS th G GS th G GS th
S D S D S D
S D S D S D
6
Currents: apply VDS
VGS>VT
7
MOSFET schematic cross section – VDS=VDsat
8
Gradual channel approximation
drift current only
Valid for
low longitudinal electric fields
strong inversion VGS>Vth
dV
I = −eµ n( x) A
dx
e × n( x) = Cox (VGS − Vth − V ( x) )
µCoxW V2
I DS = (VGS − VT )VDS − DS
L 2
µCoxW
lin
I DS = ((VGS − VT )VDS ) linear region
L
µCoxW
I DS = (VGS − VT )2 saturation region
2L
Vs(x) Vs(x+∆x)
Inversion layer
I(x)
x x+∆x
9
Intrinsic level
For an intrinsic semiconductor the Fermi level is
equal to the intrinsic level.
Or: for EF=Ei, n=ni
Energy
Ec
Ei
e|VGS| EFs
EFm Ev
n = ni e ( E F − Ei ) / kT
Intrinsic level
p = ni e ( Ei − E F ) / kT
y
10
Charges
The inversion layer charge can be determined from charge neutrality:
QG = CoxVox
(
QI = − Cox (VGS − Vs ) + Qdepl )
Depletion charges
The depletion charge can be calculated from the depletion region
width of a one-sided junction.
One-sided n+p-junction
Vbi=0 because no work function difference. φm = φs
2εVdepl
Wdep = & Vdepl ≈ Vs
eN A
11
Using
Qdepl = − 2eε s N A Vs = −γ Cox Vs
Body factor
Gives
(
QI = −Cox VG − Vs − γ Vs )
Current are then expressed as:
Currents visualised
SOURCE DRAIN
12
Threshold voltage
Remember
In an ideal MOSFET the charge in the substrate is only important
for calculating the threshold voltage:
Vth=VGS where #inverted charges = #charges in the bulk
Threshold voltage
From gate to bulk VGS=Vth
Energy
EC − EF @ SiO2 / Si
= EF − EV in bulk
Ec
13
Definition of φF
Energy
@ Vth
Ec
Ei Vs = 2φ F
e|VGS| EFs
EFm Ev
14
Expression of Vth as a function of
material parameters
From gate to bulk VGS=Vth
Energy
Start with sketching energy Vox
Vs
band diagram and define
+ ---
parameters: Ec
+ -- Ei
e|VGS| EFs
EFm + Ev
+
+
Then write charge balance equation y
QG + QI + Qdepl = 0
Add potential balance equation
VGS = Vox + Vs (everywhere where the bands are bended)
15
Expression of Vth as a function of
material parameters
N
eN AεkT ln A
2 eN Aεφ F ni N A
Vth = + 2φ F = 2 + kT ln
Cox Cox ni
Oxide thickness
Substrate doping density
If φm ≠ φs
− Qdepl
Vth = (φm − φs ) + + 2φF
Cox
If there is a workfunction difference between metal and semiconductor, then this
difference needs to be removed before the previous analysis can be done →
introduction of first term.
SPICE:
Vth = (φm − φs ) − γ 2φF + 2φF
2eεN A
γ= Body effect factor
Cox
16
Threshold voltage
is thus influenced by the
depletion region via bulk charges.
Qdepl=QB
m ox inv QB p-Si
17
I-V shape – influence of Vth on current
Long channel MOSFET
The depletion charge QB is taken constant along the whole channel
length. The potential in the channel from source to drain is a linear
function of VGS-VT1-Vx(x)
VT1=VFB-2φF
Or VT1=VFB-2φF -QB/Cox
Approximation: depletion
width constant
NA- NA-
18
Influence of substrate on depletion
region and thus on the threshold voltage
QB = − 2qN Aε Si ( 2φ F + Vx ( x) − Vbulk )
http://www.ece.ucsb.edu/courses/ECE124/124A_F05Banerjee/Lectures/Lecture5.pdf
19
Why scale?
Decrease the gate length
• Increase speed
• Increase packing density
• Decrease costs?
∂I DS W
gm = ∝ µ Transconductance, control
∂VGS V L
DS = constant
dVGS
S=
dLog ( I DS ) Sub-threshold slope
gm µ 1
fT ∝ ∝ and f max ∝ Maximum operation frequency
2π CGS L Rg
20
Digital performance parameters
100
109
Gate delay (ps)
10
106
1
103
0.1
10 100 1000 1970 1980 1990 2000 2010
Gate length (nm)
1
Price (USdollar)
10-7
1970 2002 10
1975 2005
21
Short channel effects
Long ago, MOSFETs were big and could be described via drift
currents and carrier control via the gate capacitance
Now MOSFETs are small in order to increase their operation speed.
Pushing the dimensions of the gate length down influences the
electrostatics of the devices.
In order to preserve the electrostatic integrity of the MOSFET
scaling has proceeded in a controlled way:
Lg ↓ has to go together with tox ↓, NA ↑, tj ↓, VDD ↓ and W ↓
But reducing these geometrical parameters not only increases
fabrication complexity but also change the physical processes in
the device
Aim
To understand what short channel effects are and where they come
from.
To investigate ways in which to minimise short channel effects
22
Gate length modulation
L
∆L
∆L
1 1
I DS ∝ → I DS ∝
L L − ∆L
λ channel length modulation coefficient
n n
Leff
p
depletion depletion
23
Relative importance of source and drain
depletion regions
Due to depletion widths from source and drain area extending towards the centre
of the channel. The extend of the depletion width becomes comparable to the
original gate length in short channel FETs.
L L
Leff Leff
I VT Charge sharing
0.25µm
0.75µm
24
Assumptions made in order to derive an
analytical model for the Vth roll-off.
• VDS=0V
• S & D implanted regions are circular near the channel
• The implant depth of the S & D ohmic contacts, tj are the
same
• The depletion layers WSB, WDB and Wdepl are all the same
width.
• The charges at the S & D are equally shared with the gate.
L WDepl
From geometrical considerations
S G D
ws = (t j + WSB )
2 2
− WSB −tj
n+ t j n+ = (t j + WDepl )
2 2
− WDepl −tj
WSB LB WDB 2WDepl
ws ws = t j 1 + − 1
ws tj
tj+WSB p
25
QB: bulk charge due to gate only (no S&D depletion)
QDepl t j 2WDepl
∆VT = 1+ − 1
Cox L tj
eN AWDepl t ox t j 2WDepl
= 1+ − 1
ε oxε 0 L tj
DIBL
26
Drain Induced Barrier Lowering (DIBL)
VDS small
G Short channel
Long channel
S D
n+ n+
Electron potential
energy DIBL
VS
VDS VDS
27
Drain voltage breakdown mechanisms,
VDS large
Avalanche breakdown
Large field
Avalanche breakdown
breakdown
28
Drain voltage breakdown mechanisms,
VDS large
Punch through
I
V
DG depletion reaches SG depletion
Space charge limiting currents appear → carriers hopping through an
insulating layer + thermionic currents across the potential barriers in
the channel.
29
Strategies to control short-channel
effects
• Pocket or halo implants
30
Other parameters
Other parameters that influence the current-
voltage characteristics that we have not yet
taken into account.
Mobility variations
+
ED
S + D
n+ n+ S D
EG
EGD
Due to scattering (function
of resulting field), there is a
Field on the carriers in variation of the mobility in
the channel is composed the channel
of 2 components
Variation of resulting
field along the channel
31
Velocity saturation
qτ 2nd law of motion
At low fields: v = µE = E
m dv mn
mn + v = qE
Drift velocity increases with increasing
dt τfield
v
Region of varying mobility
vsat I = WC (Vgs − VT )vsat
vsat
fT =
2πL
E
Velocity saturation
influence on I-V characteristics
32
Velocity saturation
Influence on transfer characteristics
From: http://www.ece.ucsb.edu/courses/ECE124/124A_F05Banerjee/Lectures/Lecture6.pdf
nΓ n
v eff = vΓ + L vL
n n
E v eff = (1 − F )vΓ + FvL
dv eff dv dF dF dv
µeff = = (1 − F ) Γ − vΓ + vL +F L
E dE dE dE dE dE
under the assumption that the electrons in the upper valley
are moving at saturation velocity
mL>mΓ
dF dF
µeff = (1 − F ) µΓ − µΓ E + vL
dE dE
µeff < 0 if
dF 1− F
k >
L Γ dE E − vL
µΓ
33
Sub-threshold conduction VGS<VT
Channel region is “weakly” inverted
0 + +
n n
p E
Sub-threshold conduction
Weak inversion
Diffusion currents
by electrons in the Fermi-tail
thus will be exponentially dependent on gate voltage
34
Sub-threshold conduction
Weak inversion
S G D Small voltage drop across channel
-> potential ~constant
Ec
e-
VDS Potential barrier between S & G
Energy
e-
Sub-threshold conduction
ID
ideal
Weak inversion
Diffusion currents VT VG
by electrons in the Fermi-tail Exponential sub-threshold current
35
Sub-threshold slope
IDS Log(IDS )
Exponential curve
ideal
∆ΙD
∆VG
S small
VT VGS VGS
VT
Sub-threshold current dVGS
S= Subthreshold slope
dLog ( I DS )
Sub-threshold conduction
MOS-bipolar equivalent in weak inversion
Cdepl
Bulk (p)
The S-B-D = npn sandwich with mobile minority carriers in the p-type
bulk region. This is equivalent to a BJT, except that the base potential is
controlled through a capacitive divider Cox and Cdepl, and not directly by
carrier injection via the third electrode.
36
Sub-threshold conduction
MOS-bipolar equivalent in weak inversion
Consequence for current
qVBE
In BJT: IC ≅ I S e kT
q (VGS −VT )
Thus by analogy in weakly inverted MOS: I D ≅ I 0e
nkT
From: http://www.ece.ucsb.edu/courses/ECE124/124A_F05Banerjee/Lectures/Lecture6.pdf
37
Influence of statistical variations in
doping atoms in bulk underneath channel
38
Conclusion
• Different short channel effects contribute to a
deviation of the current-voltage characteristics
based on the “simple” MOSFET model: DIBL and
leakage currents are the main culprits.
• Present day devices need more ingenious models.
– 2-D and 3-D device simulators are commercially
available
• MEDICI, TAURUS
• ATLAS
• We need novel device geometries or material
systems to deal with these problems.
39