S2PF380N65R

N-Channel 650V Enhancement Mode Power MOSFET

General Description
VDS,Tj(max)=700V
S2PF380N65R provide low RDS(ON), low gate charge, fast
switching and excellent avalanche characteristics. This RDS(ON) ≦380mΩ@VGS=10V
device is suitable for active power factor correction and ID,pulse= 33A
switching mode power supply applications.

Features
• Low RDS(ON) & FOM
• Extremely low switching loss
D:Drain
• Excellent stability and uniformity G:Gate
S:Source
• Easy to drive
• Marking: S2PF380N65R
• Qualified according to AEC-Q101
• Weight: 2070mg
• RoHS Compliant
(ITO-220AB)
Top View

Application
• Lighting
• Hard switching PWM
• Server power supply
• Charger

Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)

PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS ±30 V
Tc=25°C 11
Continuous Drain Current1 ID A
Tc=100°C 7
Pulsed Drain Current2 IDM 33 A
Power Dissipation3 Tc=25°C PD 31 W
Single pulsed avalanche energy5 EAS 272 mJ
MOSFET dv/dt ruggeness,VDS=0…480V dv/dt 50
V/nS
Reverse diode dv/dt, VDS=0… 480 V, ISD≤ ID dv/dt 15
Operating Junction and Storage Temperature Range TJ, Tstg -55 to150 °C
Thermal Characteristics
PARAMETER SYMBOL TYP UNIT
Thermal Resistance Junction-to-Case RthJC 4
°C /W
Thermal Resistance Junction-to-Ambient4 RthJA 62.5

Rev.-1, Aug. 2017, KTLC46 1

 S2PF380N65R
N-Channel 650V Enhancement Mode Power MOSFET
Electrical Characteristics (TA =25°C Unless Otherwise Specified)
PARAMETER TEST CONDITION SYMBOL MIN TYP MAX UNIT
STATIC
VGS=0V,ID=250uA 650 -- --
Drain-Source Breakdown Voltage V(BR)DSS V
VGS=0V,ID=250uA,Tj=150°C 700 750 --
Gate Threshold Voltage VDS=VGS,ID=250uA VGS(th) 2.0 -- 4.0 V
Gate-Source Leakage VDS=0V, VGS=±30V IGSS -- -- ±100 nA
Zero Gate Voltage Drain Current VDS=650V,VGS=0V IDSS -- -- 1 uA

VGS=10V,ID=5.5A -- 0.33 0.38

Drain-Source On-Resistance RDS(ON) Ω
VGS=10V,ID=5.5A, TJ=150°C -- 0.83 --
DYNAMIC

Total Gate Charge Qg -- 13 --

Gate-Source Charge VGS=10V,VDS=480V, Qgs -- 3.6 -- nC
Gate-Drain Charge ID=11A Qgd -- 5.6 --
Gate plateau voltage Vplateau -- 5.6 -- V

Input Capacitance Ciss -- 690 --

VGS=0V,VDS=50V,
Output Capacitance Coss -- 57 -- pF
F=1MHz
Reverse Transfer Capacitance Crss -- 2.47 --

Gate Resistance VGS=0V,VDS=0V, F=1MHz Rg -- 30 -- Ω

Turn-On Delay Time td(on) -- 26 --

Turn-On Rise Time VGS = 10V, VDS = 380V, tr -- 28.3 --
nS
Turn-Off Delay Time RG = 25Ω, ID=11A td(off) -- 34 --
Turn-Off Fall Time tf -- 33.2 --
Source-Drain Diode

Diode forward current IS -- -- 11

VGS<Vth A
Pulsed source current ISP -- -- 33
Diode forward voltage IS=11 A, VGS=0 V VSD -- -- 1.3 V

Reverse recovery time trr -- 266 -- nS

VR=400 V, IS=11 A,
Reverse recovery charge Qrr -- 2.8 -- uC
dI/dt=100 A/µs
Peak reverse recovery current Irrm -- 19.6 -- A
Notes:
(1). Calculated continuous current based on maximum allowable junction temperature.
(2). Repetitive rating; pulse width limited by max. junction temperature.
(3). Pd is based on max. junction temperature, using junction-case thermal resistance.
(4). The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
(5). VDD=50 V, RG=25 Ω, L=10.8 mH, starting Tj=25 °C.
(6). LiteON Semiconductor reserves the right to improve product design, functions and reliability without notice.

Rev.-1, Aug. 2017, KTLC46 2

 S2PF380N65R
N-Channel 650V Enhancement Mode Power MOSFET
Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics
20
VDS=20 V
18
8V
16
10V 10
ID, Drain-source current (A)

ID, Drain current(A)

14 7V

12

10 125 ℃
6V
8

6 25 ℃

4
VGS= 5V
2

0 1
0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10
VDS, Drain-source voltage (V) VGS, Gate-source voltage(V)
Figure 3, Typ. Capacitances Figure 4, Typ. gate charge
10
VGS, Gate-source voltage(V)

8
1000
C, Capacitance (pF)

C iss
6

100

4
C oss
10
2

C rss
1 0
0 20 40 60 80 100 0 2 4 6 8 10 12 14
V DS , D rain-source voltag e (V ) Qg, Gate charge(nC)
Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance
1.0

V 750
BVDSS , Drain-source voltage ( )

0.8
RDS(on) , On-resistance(Ω)

700 0.6

0.4

650

0.2

600 0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160
T j , Juntion tem perature ( ℃ ) T j , Juntion tem perature ( ℃ )

Rev.-1, Aug. 2017, KTLC46 3

 S2PF380N65R
N-Channel 650V Enhancement Mode Power MOSFET
Figure 7, Forward characteristic of body diode Figure 8, Drain-source on-state resistance
0.45

10

RDS(ON), On-resistance(Ω)
Is, Source current(A)

0.40

125 ℃

0.35 VGS=7 V
1

25 ℃
0.30 VGS=10 V

0.1 0.25
0.4 0.6 0.8 1.0 1.2 2 4 6 8 10
VSD, Source-drain voltage(V) ID, Drain current(A)
Figure 9, Drain current Figure 10, Safe operation area (TC=25 ℃)
12
100

10
ID, Drain-source current (A)

10
8
ID, Drain current(A)

10us
RDS(ON) Limited
6 100µs
1

1ms
4
10ms
0.1
2
DC

0
0.01
0 25 50 75 100 125 150
T C , C a s e te m p e ra tu re ( ℃ ) 1 10 100
VDS, Drain-source voltage(V)
1000

Rev.-1, Aug. 2017, KTLC46 4

 S2PF380N65R
N-Channel 650V Enhancement Mode Power MOSFET

Test circuit and waveforms

Figure 1, Gate charge test circuit & waveform

Figure 2, Switching time test circuit & waveforms

Figure 3, Unclamped inductive switching (UIS) test circuit & waveforms

Figure 4, Diode reverse recovery test circuit & waveforms

Rev.-1, Aug. 2017, KTLC46 5

 S2PF380N65R
N-Channel 650V Enhancement Mode Power MOSFET

Package Outline Dimension

ITO-220(S)AB
ITO-220(S)AB
DIM MIN MAX
A 14.95 15.95
B 10.00 10.40
C 2.76 3.36
D 8.50 8.80
E 2.10 2.50
F 13.00 13.70
G 1.15 1.37
H 2.40 2.70
I 0.50 0.80
J 0.45 0.70
K 3.00 3.30
L 4.46 4.87
M 2.48 2.80
N 2.50 2.80
All dimension in millimeter

ITO-220AB(Q type)
ITO-220AB (Q type)
DIM MIN MON MAX
A 4.50 4.70 4.83
A1 2.34 2.54 2.74
A2 0.70 REF
A3 2.56 2.76 2.93
b 0.70 -- 0.90
b1 1.18 -- 1.38
b2 -- -- 1.47
c 0.45 0.50 0.60
D 15.67 15.87 16.07
D1 15.55 15.75 15.95
D2 9.60 9.80 10.0
E 9.96 10.16 10.36
e 2.54BSC
H1 6.48 6.68 6.88
L 12.68 12.98 13.28
L1 -- -- 3.50
L2 6.50REF
ΦP 3.08 3.18 3.28
Q 3.20 -- 3.40
All Dimensions in millimeter

Rev.-1, Aug. 2017, KTLC46 6

 S2PF380N65R
N-Channel 650V Enhancement Mode Power MOSFET

Marking information

Logo LT YMWW Date code

S2PF M=Assembly Code
380N65R
Marking

Packaging Information

Tubes / Inner Box size Units / Inner Inner Box / Carton size Units / Carton
PACKAGE Units / Tube
Box (mm) Box Carton Box (mm) Box
ITO-
50 40 555X165X95 2K 2 575X179X225 4K
220(S)AB
ITO-220AB
50 40 570X180X75 2K 4 585X342X203 8K
(Q type)

Rev.-1, Aug. 2017, KTLC46 7

 S2PF380N65R
N-Channel 650V Enhancement Mode Power MOSFET

Important Notice and Disclaimer

LSC reserves the right to make changes to this document and its products and
specifications at any time without notice. Customers should obtain and confirm the latest
product information and specifications before final design, purchase or use.
LSC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does LSC assume any liability for application assistance or
customer product design. LSC does not warrant or accept any liability with products which
are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of
LSC.
LSC products are not authorized for use as critical components in life support devices or
systems without express written approval of LSC

Rev.-1, Aug. 2017, KTLC46 8