Computing Ds 4Gb DDR3 (B-Ver) Based UDIMM (Rev.1.0)

240pin DDR3 SDRAM Unbuffered DIMM
DDR3 SDRAM
Unbuffered DIMMs
Based on 4Gb B-Die
HMT451U6BFR8C
HMT451U7BFR8C
HMT41GU6BFR8C
HMT41GU7BFR8C
*SK hynix reserves the right to change products or specifications without notice.
Rev. 1.0 /Nov. 2013 1

Revision History
Revision No. History Draft Date Remark
1.0 1.0 version Release Nov. 2013
Rev. 1.0 / Nov. 2013 2

Description
SK hynix Unbuffered DDR3 SDRAM DIMMs (Unbuffered Double Data Rate Synchronous DRAM Dual In-Line
Memory Modules) are low power, high-speed operation memory modules that use DDR3 SDRAM devices.
These Unbuffered SDRAM DIMMs are intended for use as main memory when installed in systems such as
PCs and workstations.

Feature
• VDD=1.5V +/- 0.075V
• VDDQ=1.5V +/- 0.075V
• VDDSPD=3.0V to 3.6V
• 8 internal banks
• Data transfer rates: PC3-14900, PC3-12800, PC3-10600,PC3-8500
• Bi-directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly: BL 8 or BC (Burst Chop) 4
• Supports ECC error correction and detection
• On Die Termination (ODT) supported
• Temperature sensor with integrated SPD (Serial Presence Detect) EEPROM
• This product is in Compliance with the RoHS directive

Ordering Information
# of
Part Number Density Organization Component Composition FDHS
ranks
HMT451U6BFR8C-G7/H9/PB/RD 4GB 512Mx64 512Mx8(H5TQ4G83BFR)*8 1 X
HMT451U7BFR8C-G7/H9/PB/RD 4GB 512Mx72 512Mx8(H5TQ4G83BFR)*9 1 X
HMT41GU6BFR8C-G7/H9/PB/RD 8GB 1Gx64 512Mx8(H5TQ4G83BFR)*16 2 X
HMT41GU7BFR8C-G7/H9/PB/RD 8GB 1Gx72 512Mx8(H5TQ4G83BFR)*18 2 X
Rev. 1.0 / Nov. 2013 3

Key Parameters
CAS
tCK tRCD tRP tRAS tRC
MT/s Grade Latency CL-tRCD-tRP
(ns) (ns) (ns) (ns) (ns)
(tCK)
DDR3-1066 -G7 1.875 7 13.125 13.125 37.5 50.625 7-7-7
13.5 13.5 49.5

DDR3-1333 -H9 1.5 9 36 9-9-9
(13.125)* (13.125)* (49.125)*
13.75 13.75 48.75

DDR3-1600 -PB 1.25 11 35 11-11-11
(13.125)* (13.125)* (48.125)*
13.91 13.91 47.91

DDR3-1866 -RD 1.07 13 34 13-13-13
(13.125)* (13.125)* (47.125)*
*SK hynix DRAM devices support optional downbinning to CL11, CL9 and CL7. SPD setting is programmed to match.
Speed Grade
Frequency [Mbps]
Grade Remark
CL6 CL7 CL8 CL9 CL10 CL11 CL12 CL13
-G7 800 1066 1066
-H9 800 1066 1066 1333 1333
-PB 800 1066 1066 1333 1333 1600
-RD 800 1066 1066 1333 1333 1600 1866
Address Table
2GB(1Rx16) 4GB(1Rx8) 4GB(1Rx8) 8GB(2Rx8) 8GB(2Rx8)
Refresh Method 8K/64ms 8K/64ms 8K/64ms 8K/64ms 8K/64ms
Row Address A0-A14 A0-A15 A0-A15 A0-A15 A0-A15
Column Address A0-A9 A0-A9 A0-A9 A0-A9 A0-A9
Bank Address BA0-BA2 BA0-BA2 BA0-BA2 BA0-BA2 BA0-BA2
Page Size 2KB 1KB 1KB 1KB 1KB
Rev. 1.0 / Nov. 2013 4

Pin Descriptions
Pin Name Description Pin Name Description
A0–A15 SDRAM address bus SCL I2C serial bus clock for EEPROM
BA0–BA2 SDRAM bank select SDA I2C serial bus data line for EEPROM
RAS SDRAM row address strobe SA0–SA2 I2C slave address select for EEPROM
CAS SDRAM column address strobe VDD* SDRAM core power supply
WE SDRAM write enable VDDQ* SDRAM I/O Driver power supply
S0–S1 DIMM Rank Select Lines VREFDQ SDRAM I/O reference supply
SDRAM command/address reference
CKE0–CKE1 SDRAM clock enable lines VREFCA
supply
ODT0–ODT1 On-die termination control lines VSS Power supply return (ground)
DQ0–DQ63 DIMM memory data bus VDDSPD Serial EEPROM positive power supply
CB0–CB7 DIMM ECC check bits NC Spare pins (no connect)
SDRAM data strobes Memory bus analysis tools
DQS0–DQS8 TEST
(positive line of differential pair) (unused on memory DIMMS)
SDRAM data strobes
DQS0–DQS8 RESET Set DRAMs to Known State
(negative line of differential pair)
SDRAM data masks/high data strobes
DM0–DM8 VTT SDRAM I/O termination supply
(x8-based x72 DIMMs)
SDRAM clocks
CK0–CK1 RSVD Reserved for future use
(positive line of differential pair)
SDRAM clocks
CK0–CK1 - -
(negative line of differential pair)
*The VDD and VDDQ pins are tied common to a single power-plane on these designs
Rev. 1.0 / Nov. 2013 5

Input/Output Functional Descriptions
Symbol Type Polarity Function
CK and CK are differential clock inputs. All the DDR3 SDRAM addr/cntl
CK0–CK1 Differential inputs are sampled on the crossing of positive edge of CK and negative
SSTL
CK0–CK1 crossing edge of CK. Output (read) data is reference to the crossing of CK and CK
(Both directions of crossing).
Activates the SDRAM CK signal when high and deactivates the CK signal
CKE0–CKE1 SSTL Active High when low. By deactivating the clocks, CKE low initiates the Power Down
mode, or the Self Refresh mode.
Enables the associated SDRAM command decoder when low and disables
the command decoder when high. When the command decoder is dis-
S0–S1 SSTL Active Low
abled, new commands are ignored but previous operations continue. This
signal provides for external rank selection on systems with multiple ranks.
RAS, CAS, WE SSTL Active Low RAS, CAS, and WE (ALONG WITH S) define the command being entered.
When high, termination resistance is enabled for all DQ, DQS, DQS and DM
ODT0–ODT1 SSTL Active High
pins, assuming this function is enabled in the Mode Register 1 (MR1).
VREFDQ Supply Reference voltage for SSTL15 I/O inputs.
VREFCA Supply Reference voltage for SSTL 15 command/address inputs.
Power supply for the DDR3 SDRAM output buffers to provide improved
VDDQ Supply noise immunity. For all current DDR3 unbuffered DIMM designs, VDDQ
shares the same power plane as VDD pins.
BA0–BA2 SSTL — Selects which SDRAM bank of eight is activated.
During a Bank Activate command cycle, Address input defines the row
address (RA0–RA15).
During a Read or Write command cycle, Address input defines the column
address. In addition to the column address, AP is used to invoke autopre-
charge operation at the end of the burst read or write cycle. If AP is high,
autoprecharge is selected and BA0, BA1, BA2 defines the bank to be pre-
A0–A15 SSTL — charged. If AP is low, autoprecharge is disabled. During a Precharge com-
mand cycle, AP is used in conjunction with BA0, BA1, BA2 to control which
bank(s) to precharge. If AP is high, all banks will be precharged regardless
of the state of BA0, BA1 or BA2. If AP is low, BA0, BA1 and BA2 are used to
define which bank to precharge. A12(BC) is sampled during READ and
WRITE commands to determine if burst chop (on-the-fly) will be per-
formed (HIGH, no burst chop; LOW, burst chopped).
DQ0–DQ63,
SSTL — Data and Check Bit Input/Output pins.
CB0–CB7
DM is an input mask signal for write data. Input data is masked when DM
is sampled High coincident with that input data during a write access. DM
DM0–DM8 SSTL Active High
is sampled on both edges of DQS. Although DM pins are input only, the DM
loading matches the DQ and DQS loading.
Power and ground for the DDR3 SDRAM input buffers, and core logic. VDD
VDD, VSS Supply
and VDDQ pins are tied to VDD/VDDQ planes on these modules.
Rev. 1.0 / Nov. 2013 6

Symbol Type Polarity Function
DQS0–DQS8 Differential
SSTL Data strobe for input and output data.
DQS0–DQS8 crossing
These signals are tied at the system planar to either VSS or VDDSPD to con-
SA0–SA2 —
figure the serial SPD EEPROM address range.
This bidirectional pin is used to transfer data into or out of the SPD
SDA — EEPROM. An external resistor may be connected from the SDA bus line to
VDDSPD to act as a pullup on the system board.
This signal is used to clock data into and out of the SPD EEPROM. An
SCL — external resistor may be connected from the SCL bus time to VDDSPD to act
as a pullup on the system board.
Power supply for SPD EEPROM. This supply is separate from the VDD/VDDQ
VDDSPD Supply
power plane. EEPROM supply is operable from 3.0V to 3.6V.
Rev. 1.0 / Nov. 2013 7

Pin Assignments
Front Side(left 1–60) Back Side(right 121–180) Front Side(left 61–120) Back Side(right 181–240)
Pin x64 x72 Pin x64 x72 Pin x64 x72 Pin x64 x72
# Non-ECC ECC # Non-ECC ECC # Non-ECC ECC # Non-ECC ECC
1 VREFDQ VREFDQ 121 VSS VSS 61 A2 A2 181 A1 A1
2 VSS VSS 122 DQ4 DQ4 62 VDD VDD 182 VDD VDD
3 DQ0 DQ0 123 DQ5 DQ5 63 CK1 CK1 183 VDD VDD
4 DQ1 DQ1 124 VSS VSS 64 CK1 CK1 184 CK0 CK0
5 VSS VSS 125 DM0 DM0 65 VDD VDD 185 CK0 CK0
6 DQS0 DQS0 126 NC NC 66 VDD VDD 186 VDD VDD
7 DQS0 DQS0 127 VSS VSS 67 VREFCA VREFCA 187 NC EVENT
8 VSS VSS 128 DQ6 DQ6 68 NC NC 188 A0 A0
9 DQ2 DQ2 129 DQ7 DQ7 69 VDD VDD 189 VDD VDD
10 DQ3 DQ3 130 VSS VSS 70 A10 A10 190 BA12 BA12
11 VSS VSS 131 DQ12 DQ12 71 BA02 BA02 191 VDD VDD
12 DQ8 DQ8 132 DQ13 DQ13 72 VDD VDD 192 RAS RAS
13 DQ9 DQ9 133 VSS VSS 73 WE WE 193 S0 S0
14 VSS VSS 134 DM1 DM1 74 CAS CAS 194 VDD VDD
15 DQS1 DQS1 135 NC NC 75 VDD VDD 195 ODT0 ODT0
16 DQS1 DQS1 136 VSS VSS 76 S1 S1 196 A13 A13
17 VSS VSS 137 DQ14 DQ14 77 ODT1 ODT1 197 VDD VDD
18 DQ10 DQ10 138 DQ15 DQ15 78 VDD VDD 198 NC NC
19 DQ11 DQ11 139 VSS VSS 79 NC NC 199 VSS VSS
20 VSS VSS 140 DQ20 DQ20 80 VSS VSS 200 DQ36 DQ36
21 DQ16 DQ16 141 DQ21 DQ21 81 DQ32 DQ32 201 DQ37 DQ37
22 DQ17 DQ17 142 VSS VSS 82 DQ33 DQ33 202 VSS VSS
23 VSS VSS 143 DM2 DM2 83 VSS VSS 203 DM4 DM4
24 DQS2 DQS2 144 NC NC 84 DQS4 DQS4 204 NC NC
25 DQS2 DQS2 145 VSS VSS 85 DQS4 DQS4 205 VSS VSS
NC = No Connect; RFU = Reserved Future Use

1. NC pins should not be connected to anything on the DIMM, including bussing within the NC group.
2. Address pins A3–A8 and BA0 and BA1 can be mirrored or not mirrored.
Rev. 1.0 / Nov. 2013 8

Front Side(left 1–60) Back Side(right 121–180) Front Side(left 61–120) Back Side(right 181–240)
Pin x64 x72 Pin x64 x72 Pin x64 x72 Pin x64 x72
# Non-ECC ECC # Non-ECC ECC # Non-ECC ECC # Non-ECC ECC
33 DQS3 DQS3 153 NC NC 93 DQS5 DQS5 213 NC NC
34 DQS3 DQS3 154 VSS VSS 94 DQS5 DQS5 214 VSS VSS
38 VSS VSS 158 NC CB4 98 VSS VSS 218 DQ52 DQ52
39 NC CB0 159 NC CB5 99 DQ48 DQ48 219 DQ53 DQ53
40 NC CB1 160 VSS VSS 100 DQ49 DQ49 220 VSS VSS
42 NC DQS8 162 NC NC 102 DQS6 DQS6 222 NC NC
43 NC DQS8 163 VSS VSS 103 DQS6 DQS6 223 VSS VSS
44 VSS VSS 164 NC CB6 104 VSS VSS 224 DQ54 DQ54
45 NC CB2 165 NC CB7 105 DQ50 DQ50 225 DQ55 DQ55
46 NC CB3 166 VSS VSS 106 DQ51 DQ51 226 VSS VSS
47 VSS VSS 167 NC NC 107 VSS VSS 227 DQ60 DQ60
48 NC NC 168 Reset Reset 108 DQ56 DQ56 228 DQ61 DQ61
KEY KEY 109 DQ57 DQ57 229 VSS VSS
49 NC NC 169 CKE1/NC CKE1/NC 110 VSS VSS 230 DM7 DM7
50 CKE0 CKE0 170 VDD VDD 111 DQS7 DQS7 231 NC NC
51 VDD VDD 171 NC NC 112 DQS7 DQS7 232 VSS VSS
52 BA2 BA2 172 A14 A14 113 VSS VSS 233 DQ62 DQ62
53 NC NC 173 VDD VDD 114 DQ58 DQ58 234 DQ63 DQ63
54 VDD VDD 174 A12 A12 115 DQ59 DQ59 235 VSS VSS
55 All All 175 A9 A9 116 VSS VSS 236 VDDSPD VDDSPD
56 A72 A72 176 VDD VDD 117 SA0 SA0 237 SA1 SA1
57 VDD VDD 177 A82 A82 118 SCL SCL 238 SDA SDA
58 A52 A52 178 A62 A62 119 SA2 SA2 239 VSS VSS
59 A42 A42 179 VDD VDD 120 VTT VTT 240 VTT VTT
60 VDD VDD 180 A32 A32
NC = No Connect; RFU = Reserved Future Use

1. NC pins should not be connected to anything on the DIMM, including bussing within the NC group.
2. Address pins A3–A8 and BA0 and BA1 can be mirrored or not mirrored.
Rev. 1.0 / Nov. 2013 9

On DIMM Thermal Sensor
The DDR3 SDRAM DIMM temperature is monitored by integrated thermal sensor. The integrated thermal
sensor comply with JEDEC “TSE2002av, Serial Presence Detect with Temperature Sensor”.
Connection of Thermal Sensor
EVENT
SCL
SDA SA0
EVENT
SPD with SA1
SCL Integrated SA2
SA0 SDA TS
SA1
SA2
Temperature-to-Digital Conversion Performance
Parameter Condition Min Typ Max Unit
Active Range,
- ± 0.5 ± 1.0 °C
75°C < TA < 95°C
Temperature Sensor Accuracy (Grade B) Monitor Range,

- ± 1.0 ± 2.0 °C
40°C < TA < 125°C
-20°C < TA < 125°C - ± 2.0 ± 3.0 °C
Resolution 0.25 °C
Rev. 1.0 / Nov. 2013 10

Functional Block Diagram
4GB, 512Mx64 Module(1Rank of x8)
DQS0 S0
DQS4
DQS0 DQS4
DM0 DM4
DM CS DQS DQS DM CS DQS DQS
DQ0 I/O 0 DQ32 I/O 0
D0 D4
DQ6 I/O 6 ZQ DQ38 I/O 6 ZQ
DQS5
DQS1
DQS1 DQS5
DM1 DM5
DQ9 I/O 1 DQ41 I/O 1 D5
D1
DQ10 I/O 2 DQ42 I/O 2
DQ11 I/O 3 DQ43 I/O 3
DQ12 I/O 4 DQ44 I/O 4
DQ13 I/O 5 DQ45 I/O 5
DQ15 I/O 7 DQ47 I/O 7
DQS6
DQS2
DQS2 DQS6
DM2 DM6
DQ16 I/O 0 DQ48 I/O 0
DQ17 I/O 1 DQ49 I/O 1 D6
D2 DQ50 I/O 2
DQ18 I/O 2
DQ19 I/O 3 DQ51 I/O 3
DQ20 I/O 4 DQ52 I/O 4
DQ21 I/O 5 DQ53 I/O 5
DQ22 I/O 6 DQ54 I/O 6 ZQ
DQ55 I/O 7
DQS3
DQ23 I/O 7 ZQ DQS7
DQS3 DQS7
DM3 DM7
DQ24 I/O 0 DQ56 I/O 0
DQ25 I/O 1 DQ57 I/O 1 D7
D3
DQ26 I/O 2 DQ58 I/O 2
DQ27 I/O 3 DQ59 I/O 3
DQ28 I/O 4 DQ60 I/O 4
DQ29 I/O 5 DQ61 I/O 5
I/O 6 ZQ
I/O 7
Serial PD
Notes:
SCL 1. DQ-to-I/O wiring is shown as recom-
WP SDA
mended but may be changed.
A0 A1 A2
2. DQ/DQS/DQS/ODT/DM/CKE/S relation-
BA0–BA2: SDRAMs D0–D7 ships must be maintained as shown.
SA0 SA1 SA2
A0–A15: SDRAMs D0–D7 3. DQ,DM,DQS/DQS resistors;Refer to
associated topology diagram.
RAS RAS: SDRAMs D0–D7
4. Refer to the appropriate clock wiring
CAS CAS: SDRAMs D0–D7 topology under the DIMM wiring details
VDDSPD SPD section of this document.
CKE0 CKE: SDRAMs D0–D7
VDD/VDDQ 5. Refer to Section 3.1 of this document for
WE WE: SDRAMs D0–D7 D0–D7
details on address mirroring.
ODT0 ODT: SDRAMs D0–D7 VREFDQ D0–D7 6. For each DRAM, a unique ZQ resistor is
CK0 CK: SDRAMs D0–D7 VSS D0–D7
connected to ground.The ZQ resistor is
CK0 CK: SDRAMs D0–D7 240ohm+-1%
VREFCA D0–D7 7. One SPD exists per module.
RESET RESET: SDRAMs D0-D7
Rev. 1.0 / Nov. 2013 11

4GB, 512Mx72 Module(1Rank of x8)
S0
DQS0 DQS4
DQS0 DQS4
DM0 DM4
DQ1 I/O 1 DQ33 I/O 1 D4
D0
DQS5
DQS1
DQS1 DQS5
DM1 DM5
DQ9 I/O 1 DQ41 I/O 1 D5
D1
DQ10 I/O 2 DQ42 I/O 2
DQ11 I/O 3 DQ43 I/O 3
DQ12 I/O 4 DQ44 I/O 4
DQ13 I/O 5 DQ45 I/O 5
DQ15 I/O 7 DQ47 I/O 7
DQS6
DQS2
DQS2 DQS6
DM2 DM6
DQ16 I/O 0 DQ48 I/O 0
DQ17 I/O 1 DQ49 I/O 1 D6
D2 DQ50 I/O 2
DQ18 I/O 2
DQ19 I/O 3 DQ51 I/O 3
DQ20 I/O 4 DQ52 I/O 4
DQ21 I/O 5 DQ53 I/O 5
DQ55 I/O 7
DQS3
DQ23 I/O 7 DQS7
DQS3 DQS7
DM3 DM7
DQ24 I/O 0 DQ56 I/O 0
DQ25 I/O 1 DQ57 I/O 1 D7
D3
DQ26 I/O 2 DQ58 I/O 2
DQ27 I/O 3 DQ59 I/O 3
DQ28 I/O 4 DQ60 I/O 4
DQ29 I/O 5 DQ61 I/O 5
DQ31 I/O 7 DQ63 I/O 7
DQS8
DQS8
DM8 SPD(TS integrated)
DM CS DQS DQS
CB0 I/O 0 SCL Notes:
CB1 I/O 1 D8 SDA 1. DQ-to-I/O wiring is shown as recom-
EVENT mended but may be changed.
CB2 I/O 2 EVENT
CB3 I/O 3 A0 A1 A2
2. DQ/DQS/DQS/ODT/DM/CKE/S rela-
CB4 I/O 4
CB5 I/O 5 SA0 SA1 SA2 tionships must be maintained as
CB6 I/O 6 ZQ shown.
CB7 I/O 7 3. DQ,CB,DM,DQS/DQS resistors;Refer
BA0–BA2 BA0–BA2: SDRAMs D0–D8 to associated topology diagram.
A0–A15 A0–A15: SDRAMs D0–D8 VDDSPD
SPD
4. Refer to the appropriate clock wiring
RAS RAS: SDRAMs D0–D8 topology under the DIMM wiring
VDD/VDDQ D0–D8
CAS CAS: SDRAMs D0–D8 details section of this document.
CKE0 CKE: SDRAMs D0–D8 VREFDQ 5. For each DRAM, a unique ZQ resistor
WE WE: SDRAMs D0–D8 D0–D8
is connected to ground.The ZQ resis-
ODT0 ODT: SDRAMs D0–D8 VSS D0–D8 tor is 240ohm+-1%
CK0 CK: SDRAMs D0–D8 6. One SPD exists per module.
CK0 CK: SDRAMs D0–D8
V REFCA D0–D8
RESET RESET:SDRAMs D0-D8
Rev. 1.0 / Nov. 2013 12

8GB, 1Gx64 Module(2Rank of x8)
S1
S0
DQS0 DQS4
DQS0 DQS4
DM0 DM4
DM CS DQS DQS DM CS DQS DQS DM CS DQS DQS DM CS DQS DQS
DQ0 I/O 0 I/O 0 DQ32 I/O 0 I/O 0
DQ1 I/O 1 I/O 1 DQ33 I/O 1 D4 I/O 1 D12
D0 D8 DQ34 I/O 2 I/O 2
DQ2 I/O 2 I/O 2
I/O 3 DQ35 I/O 3 I/O 3
DQ3 I/O 3
I/O 4 DQ36 I/O 4 I/O 4
DQ4 I/O 4
I/O 5 DQ37 I/O 5 I/O 5
DQ5 I/O 5
I/O 6 DQ38 I/O 6 I/O 6
DQ6 I/O 6 ZQ DQ39 I/O 7 I/O 7
DQ7 I/O 7
ZQ
I/O 7
ZQ ZQ
DQS1 DQS5
DQS1 DQS5
DM1 DM5
DQ8 I/O 0 I/O 0 DQ40 I/O 0 I/O 0
DQ9 I/O 1 I/O 1 DQ41 I/O 1 D5 I/O 1 D13
D1 D9 DQ42 I/O 2 I/O 2
DQ10 I/O 2 I/O 2
DQ11 I/O 3 I/O 3 DQ43 I/O 3 I/O 3
I/O 4 I/O 4 DQ44 I/O 4 I/O 4
DQ12
I/O 5 I/O 5 DQ45 I/O 5 I/O 5
DQ13
I/O 6 I/O 6 ZQ DQ46 I/O 6 I/O 6
DQ14
DQ47 I/O 7 I/O 7 ZQ
DQ15 I/O 7 ZQ I/O 7
DQS6 ZQ
DQS2 DQS6
DQS2
DM2 DM6
DQ48 I/O 0 I/O 0
DQ16 I/O 0 I/O 0
DQ49 I/O 1 D6 I/O 1 D14
DQ17 I/O 1 D2 I/O 1 D10 DQ50 I/O 2 I/O 2
DQ18 I/O 2 I/O 2
DQ51 I/O 3 I/O 3
DQ19 I/O 3 I/O 3
DQ52 I/O 4 I/O 4
DQ20 I/O 4 I/O 4
DQ53 I/O 5 I/O 5
DQ21 I/O 5 I/O 5
DQ22 I/O 6 I/O 6 ZQ DQ54 I/O 6 I/O 6
DQ55 I/O 7 I/O 7 ZQ
DQ23 I/O 7
ZQ
I/O 7 ZQ
DQS3 DQS7
DQS3 DQS7
DM3 DM7
DQ24 I/O 0 I/O 0 DQ56 I/O 0 I/O 0
DQ25 I/O 1 D3 I/O 1 D11 DQ57 I/O 1 D7 I/O 1 D15
DQ26 I/O 2 I/O 2 DQ58 I/O 2 I/O 2
DQ27 I/O 3 I/O 3 DQ59 I/O 3 I/O 3
DQ28 I/O 4 I/O 4 DQ60 I/O 4 I/O 4
DQ29 I/O 5 I/O 5 DQ61 I/O 5 I/O 5
DQ30 I/O 6 I/O 6 DQ62 I/O 6 I/O 6
DQ31 I/O 7 I/O 7 ZQ DQ63 I/O 7 I/O 7
ZQ ZQ ZQ
Serial PD
Notes:
BA0–BA2 BA0–BA2: SDRAMs D0–D15 SCL
1. DQ-to-I/O wiring is shown as recom-
A0–A15 A0-A15: SDRAMs D0–D15
WP SDA mended but may be changed.
CKE1 CKE: SDRAMs D8–D15 A0 A1 A2 2. DQ/DQS/DQS/ODT/DM/CKE/S relation-
CKE0 CKE: SDRAMs D0–D7 ships must be maintained as shown.
SA0 SA1 SA2
RAS RAS: SDRAMs D0–D15 3. DQ,DM,DQS,DQS resistors;Refer to
CAS CAS: SDRAMs D0–D15 VDDSPD SPD associated topology diagram.
WE WE: SDRAMs D0–D15
VDD/VDDQ D0–D15 4. Refer to Section 3.1 of this document for
ODT0 ODT: SDRAMs D0–D7 details on address mirroring.
ODT1 ODT: SDRAMs D8–D15 VREFDQ D0–D15 5. For each DRAM, a unique ZQ resistor is
CK0 CK: SDRAMs D0–D7 VSS D0–D15 connected to ground.The ZQ resistor is
CK0 CK: SDRAMs D0–D7 240ohm+-1%
CK1 CK: SDRAMs D8–D15 VREFCA D0–D15 6. One SPD exists per module.
RESET RESET:SDRAMs D0-D3
Rev. 1.0 / Nov. 2013 13

8GB, 1Gx72 Module(2Rank of x8)
S1
S0
DQS0 DQS4
DQS0 DQS4
DM0 DM4
DQ0 I/O 0 I/O 0 DQ32 I/O 0 I/O 0
DQ2 I/O 2 I/O 2 DQ34 I/O 2 I/O 2
DQ3 I/O 3 I/O 3 DQ35 I/O 3 I/O 3
DQ4 I/O 4 I/O 4 DQ36 I/O 4 I/O 4
DQ5 I/O 5 I/O 5 DQ37 I/O 5 I/O 5
DQ6 I/O 6 I/O 6 ZQ DQ38 I/O 6 I/O 6
DQ7 I/O 7 I/O 7 DQ39 I/O 7 I/O 7 ZQ
ZQ ZQ
DQS1 DQS5
DQS1 DQS5
DM1 DM5
DQ8 I/O 0 I/O 0 DQ40 I/O 0 I/O 0
DQ9 I/O 1 I/O 1 DQ41 I/O 1 D5 I/O 1 D14
D1 D10 DQ42 I/O 2 I/O 2
DQ10 I/O 2 I/O 2
DQ11 I/O 3 I/O 3 DQ43 I/O 3 I/O 3
I/O 4 I/O 4 DQ44 I/O 4 I/O 4
DQ12
I/O 5 I/O 5 DQ45 I/O 5 I/O 5
DQ13 ZQ
I/O 6 I/O 6 DQ46 I/O 6 I/O 6
DQ14
DQ15 I/O 7 I/O 7 DQ47 I/O 7 I/O 7 ZQ
DQS2
ZQ DQS6 ZQ
DQS2 DQS6
DM2 DM6
DQ16 I/O 0 I/O 0 DQ48 I/O 0 I/O 0
DQ18 I/O 2 I/O 2 DQ50 I/O 2 I/O 2
DQ19 I/O 3 I/O 3 DQ51 I/O 3 I/O 3
DQ20 I/O 4 I/O 4 DQ52 I/O 4 I/O 4
DQ21 I/O 5 I/O 5 DQ53 I/O 5 I/O 5
DQ22 I/O 6 I/O 6 ZQ DQ54 I/O 6 I/O 6
DQ23 I/O 7 I/O 7 DQ55 I/O 7 I/O 7 ZQ
ZQ ZQ
DQS3 DQS7
DQS3 DQS7
DM3 DM7
DQ24 I/O 0 I/O 0 DQ56 I/O 0 I/O 0
DQ25 I/O 1 I/O 1 DQ57 I/O 1 D7 I/O 1 D16
D3 D12
DQ26 I/O 2 I/O 2 DQ58 I/O 2 I/O 2
DQ27 I/O 3 I/O 3 DQ59 I/O 3 I/O 3
DQ28 I/O 4 I/O 4 DQ60 I/O 4 I/O 4
DQ29 I/O 5 I/O 5 DQ61 I/O 5 I/O 5
DQ30 I/O 6 I/O 6 DQ62 I/O 6 I/O 6
ZQ
DQ31 I/O 7 I/O 7 DQ63 I/O 7 ZQ I/O 7
ZQ ZQ
DQS8 VDDSPD SPD
DQS8 SPD(TS integrated) VDD/VDDQ D0–D17
DM8 SCL
VREFDQ D0–D17
DM CS DQS DQS DM CS DQS DQS EVENT SDA
CB0 I/O 0 I/O 0 EVENT Vss D0–D17
A0 A1 A2
CB1 I/O 1 D8 I/O 1 D17 VREFCA D0–D17
CB2 I/O 2 I/O 2
SA0 SA1 SA2
CB3 I/O 3 I/O 3 Notes:
CB4 I/O 4 I/O 4 1. DQ-to-I/O wiring is shown as recom-
CB5 I/O 5 I/O 5 mended but may be changed.
CB6 I/O 6 I/O 6 2. DQ/DQS/DQS/ODT/DM/CKE/S relation-
CB7 I/O 7
ZQ
I/O 7
ZQ ships must be maintained as shown.
3. DQ,CB,DM/DQS/DQS resistors;Refer to
BA0–BA2 BA0-BA2: SDRAMs D0–D17 associated topology diagram.
ODT0 ODT: SDRAMs D0–D8 4. Refer to Section 3.1 of this document for
A0–A15 A0-A15: SDRAMs D0–D17 details on address mirroring.
ODT1 ODT: SDRAMs D9–D17
CKE0 CKE: SDRAMs D0–D8 5. For each DRAM, a unique ZQ resistor is
CKE1 CKE: SDRAMs D9–D17 CK0 CK: SDRAMs D0–D8 connected to ground.The ZQ resistor is
RAS RAS: SDRAMs D0–D17 CK1 CK: SDRAMs D9–D17 240ohm+-1%
CAS CAS: SDRAMs D0–D17 CK1 CK: SDRAMs D9–D17
6. One SPD exists per module.
WE WE: SDRAMs D0–D17 RESET RESET:SDRAMs D0-D17
Rev. 1.0 / Nov. 2013 14

Absolute Maximum Ratings
Absolute Maximum DC Ratings
Absolute Maximum DC Ratings
Symbol Parameter Rating Units Notes

VDD Voltage on VDD pin relative to Vss - 0.4 V ~ 1.8 V V 1, 3
VDDQ Voltage on VDDQ pin relative to Vss - 0.4 V ~ 1.8 V V 1, 3
VIN, VOUT Voltage on any pin relative to Vss - 0.4 V ~ 1.8 V V 1
TSTG Storage Temperature -55 to +100 o
C 1, 2
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than
0.6XVDDQ,When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.

DRAM Component Operating Temperature Range
Temperature Range

Normal Operating Temperature Range 0 to 85 oC 1,2
TOPER
Extended Temperature Range 85 to 95 oC
1,3
Notes:
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For mea-
surement conditions, please refer to the JEDEC document JESD51-2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. Dur-
ing operation, the DRAM case temperature must be maintained between 0 - 85oC under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between 85oC and 95oC
case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:
a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs. It
is also possible to specify a component with 1X refresh (tREFI to 7.8µs) in the Extended Temperature Range.
Please refer to the DIMM SPD for option availability
b. If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to use the
Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b).
DDR3 SDRAMs support Extended Temperature Range and please refer to component datasheet and/or the
DIMM SPD for tFEFI requirements in the Extended Temperature Range.
Rev. 1.0 / Nov. 2013 15

AC & DC Operating Conditions
Recommended DC Operating Conditions
Recommended DC Operating Conditions
Rating
Symbol Parameter Units Notes
Min. Typ. Max.
VDD Supply Voltage 1.425 1.500 1.575 V 1,2
VDDQ Supply Voltage for Output 1.425 1.500 1.575 V 1,2
Notes:
1. Under all conditions, VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
Rev. 1.0 / Nov. 2013 16

AC & DC Input Measurement Levels
AC and DC Logic Input Levels for Single-Ended Signals
AC and DC Input Levels for Single-Ended Command and Address Signals
Single Ended AC and DC Input Levels for Command and ADDress
DDR3-800/1066/1333/1600 DDR3-1866
Symbol Parameter Unit Notes
Min Max Min Max
VIH.CA(DC100) DC input logic high Vref + 0.100 VDD Vref + 0.100 VDD V 1, 5
VIL.CA(DC100) DC input logic low VSS Vref - 0.100 VSS Vref - 0.100 V 1, 6
VIH.CA(AC175) AC input logic high Vref + 0.175 Note2 - - V 1, 2, 7
VIL.CA(AC175) AC input logic low Note2 Vref - 0.175 - - V 1, 2, 8
VIH.CA(AC150) AC Input logic high Vref + 0.150 Note2 - - V 1, 2, 7
VIL.CA(AC150) AC input logic low Note2 Vref - 0.150 - - V 1, 2, 8
VIH.CA(AC135) AC input logic high - - Vref + 0.135 Note2 V 1, 2, 7
VIL.CA(AC135) AC input logic low - - Note2 Vref - 0.135 V 1, 2, 8
VIH.CA(AC125) AC Input logic high - - Vref + 0.125 Note2 mV 1, 2, 7
VIL.CA(AC125) AC input logic low - - Note2 Vref - 0.125 mV 1, 2, 8
Reference Voltage for
VRefCA(DC) 0.49 * VDD 0.51 * VDD 0.49 * VDD 0.51 * VDD V 3, 4
ADD, CMD inputs
Notes:
1. For input only pins except RESET, Vref = VrefCA (DC).
2. Refer to "Overshoot and Undershoot Specifications" on page 30.
3. The ac peak noise on VRef may not allow VRef to deviate from VRefCA(DC) by more than +/-1% VDD (for refer-
ence: approx. +/- 15 mV).
4. For reference: approx. VDD/2 +/- 15 mV.
5. VIH(dc) is used as a simplified symbol for VIH.CA(DC100)
6. VIL(dc) is used as a simplified symbol for VIL.CA(DC100)
7. VIH(ac) is used as simplified symbol for VIH.CA(AC175), VIH.CA(AC150), VIH.CA(AC135), and VIH.CA(AC125);
VIH.CA(AC175) value is used when Vref + 0.175V is referenced, VIH.CA(AC150) value is used when Vref +
0.150V is referenced, VIH.CA(AC135) value is used when Vref + 0.135V is referenced, and VIH.CA(AC125) value
is used when Vref + 0.125V is referenced.
8. VIL(ac) is used as simplified symbol for VIL.CA(AC175), VIL.CA(AC150), VIL.CA(AC135), and VIL.CA(AC125);
VIL.CA(AC175) value is used when Vref - 0.175V is referenced, VIL.CA(AC150) value is used when Vref - 0.150V is
referenced, VIL.CA(AC135) value is used when Vref - 0.135V is referenced, and VIL.CA(AC125) value is used
when Vref - 0.125V is referenced.
Rev. 1.0 / Nov. 2013 17

AC and DC Input Levels for Single-Ended Signals
DDR3 SDRAM will support two Vih/Vil AC levels for DDR3-800 and DDR3-1066 as specified in the table
below. DDR3 SDRAM will also support corresponding tDS values (Table 43 and Table 51 in “ DDR3 Device
Operation”) as well as derating tables in Table 46 of “DDR3 Device Operation” depending on Vih/Vil AC lev-
els.
Single Ended AC and DC Input Levels for DQ and DM
DDR3-800/1066 DDR3-1333/1600 DDR3-1866
Min Max Min Max Min Max
VIH.DQ(DC100) DC input logic high Vref + 0.100 VDD Vref + 0.100 VDD Vref + 0.100 VDD V 1, 5
VIL.DQ(DC100) DC input logic low VSS Vref - 0.100 VSS Vref - 0.100 VSS Vref - 0.100 V 1, 6
VIH.DQ(AC175) AC input logic high Vref + 0.175 Note2 - - - - V 1, 2, 7
VIL.DQ(AC175) AC input logic low Note2 Vref - 0.175 - - - - V 1, 2, 8
VIH.DQ(AC150) AC Input logic high Vref + 0.150 Note2 Vref + 0.150 Note2 Vref + 0.150 Note2 V 1, 2, 7
VIL.DQ(AC150) AC input logic low Note2 Vref - 0.150 Note2 Vref - 0.150 Note2 Vref - 0.150 V 1, 2, 8
VIH.CA(AC135) AC input logic high - - - - Vref + 0.135 Note2 mV 1, 2, 7
VIL.CA(AC135) AC input logic low - - - - Note2 Vref - 0.135 mV 1, 2, 8
Reference Voltage
VRefDQ(DC) 0.49 * VDD 0.51 * VDD 0.49 * VDD 0.51 * VDD 0.49 * VDD 0.51 * VDD V 3, 4
for DQ, DM inputs
Notes:
1. Vref = VrefDQ (DC).
2. Refer to "Overshoot and Undershoot Specifications" on page 30.
3. The ac peak noise on VRef may not allow VRef to deviate from VRefDQ(DC) by more than +/-1% VDD (for reference:
approx. +/- 15 mV).
4. For reference: approx. VDD/2 +/- 15 mV.
5. VIH(dc) is used as a simplified symbol for VIH.DQ(DC100)
6. VIL(dc) is used as a simplified symbol for VIL.DQ(DC100)
7. VIH(ac) is used as simplified symbol for VIH.DQ(AC175), VIH.DQ(AC150), and VIH.DQ(AC135); VIH.DQ(AC175)
value is used when Vref + 0.175V is referenced, VIH.DQ(AC150) value is used when Vref + 0.150V is referenced,
and VIH.DQ(AC135) value is used when Vref + 0.135V is referenced.
8. VIL(ac) is used as simplified symbol for VIL.DQ(AC175), VIL.DQ(AC150), and VIL.DQ(AC135); VIL.DQ(AC175)
value is used when Vref - 0.175V is referenced, VIL.DQ(AC150) value is used when Vref - 0.150V is referenced,
and VIL.DQ(AC135) value is used when Vref - 0.135V is referenced.
Rev. 1.0 / Nov. 2013 18

Vref Tolerances
The dc-tolerance limits and ac-noise limits for the reference voltages VRefCA and VRefDQ are illustrated in
figure below. It shows a valid reference voltage VRef (t) as a function of time. (VRef stands for VRefCA and
VRefDQ likewise).
VRef (DC) is the linear average of VRef (t) over a very long period of time (e.g. 1 sec). This average has to
meet the min/max requirements in the table "Differential AC and DC Input Levels" on page 21. Further-
more VRef (t) may temporarily deviate from VRef (DC) by no more than +/- 1% VDD.
voltage
VDD
VRef(t)
VRef ac-noise
VRef(DC) VRef(DC)max
VDD/2
VRef(DC)min
VSS
time
Illustration of VRef(DC) tolerance and VRef ac-noise limits
The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC), and VIL(DC) are depen-
dent on VRef.
“VRef ” shall be understood as VRef(DC), as defined in figure above.
This clarifies that dc-variations of VRef affect the absolute voltage a signal has to reach to achieve a valid
high or low level and therefore the time to which setup and hold is measured. System timing and voltage
budgets need to account for VRef(DC) deviations from the optimum position within the data-eye of the input
signals.
This also clarifies that the DRAM setup/hold specification and derating values need to include time and
voltage associated with VRefac-noise. Timing and voltage effects due to ac-noise on VRef up to the speci-
fied limit (+/- 1% of VDD) are included in DRAM timings and their associated deratings.
Rev. 1.0 / Nov. 2013 19

AC and DC Logic Input Levels for Differential Signals
Differential signal definition
tDVAC
VIL.DIFF.AC.MIN
Differential Input Voltage(i.e.DQS - DQS#, CK - CK#)
VIL.DIFF.MIN
0
half cycle
VIL.DIFF.MAX
VIL.DIFF.AC.MAX
tDVAC
time
Definition of differential ac-swing and “time above ac-level” tDVAC
Rev. 1.0 / Nov. 2013 20

Differential swing requirements for clock (CK - CK) and strobe (DQS-DQS)
Differential AC and DC Input Levels
DDR3-800, 1066, 1333, 1600, 1866
Min Max
VIHdiff Differential input high + 0.180 Note 3 V 1
VILdiff Differential input logic low Note 3 - 0.180 V 1
VIHdiff (ac) Differential input high ac 2 x (VIH (ac) - Vref) Note 3 V 2
VILdiff (ac) Differential input low ac Note 3 2 x (VIL (ac) - Vref) V 2
Notes:
1. Used to define a differential signal slew-rate.
2. For CK - CK use VIH/VIL (ac) of AADD/CMD and VREFCA; for DQS - DQS, DQSL, DQSL, DQSU, DQSU use VIH/VIL
(ac) of DQs and VREFDQ; if a reduced ac-high or ac-low levels is used for a signal group, then the reduced level
applies also here.
3. These values are not defined; however, the single-ended signals Ck, CK, DQS, DQS, DQSL, DQSL, DQSU, DQSU
need to be within the respective limits (VIH (dc) max, VIL (dc) min) for single-ended signals as well as the limita-
tions for overshoot and undershoot. Refer to "Overshoot and Undershoot Specifications" on page 30.
Allowed time before ringback (tDVAC) for CK - CK and DQS - DQS

DDR3-800/1066/1333/1600 DDR3-1866
tDVAC [ps]
Slew tDVAC [ps] tDVAC [ps] @ VIH/Ldiff (ac) tDVAC [ps] tDVAC [ps]
Rate @ VIH/Ldiff (ac) @ VIH/Ldiff (ac) = 270mV @ VIH/Ldiff (ac)| @ VIH/Ldiff (ac)|
[V/ns] = 350mV = 300mV (DQS-DQS)only = 300mV = (CK-CK)only
(Optional)
min max min max min max min max min max
> 4.0 75 - 175 - 214 - 134 - 139 -
4.0 57 - 170 - 214 - 134 - 139 -
3.0 50 - 167 - 191 - 112 - 118 -
2.0 38 - 119 146 67 77
1.8 34 - 102 - 131 - 52 - 63 -
1.6 29 - 81 - 113 - 33 - 45 -
1.4 22 - 54 - 88 - 9 - 23 -
1.2 13 - 19 - 56 - note - note -
1.0 0 - note - 11 - note - note -
< 1.0 0 - note - note - note - note -
note : Rising input differential signal shall become equal to or greater than VIHdiff(ac) level and Falling
input differential signal shall become equal to or less than VIL(ac) level.
Rev. 1.0 / Nov. 2013 21

Single-ended requirements for differential signals
Each individual component of a differential signal (CK, DQS, DQSL, DQSU, CK, DQS, DQSL, of DQSU) also
has to comply with certain requirements for single-ended signals.
CK and CK have to approximately reach VSEHmin / VSELmax (approximately equal to the ac-levels (VIH
(ac) / VIL (ac)) for ADD/CMD signals) in every half-cycle.
DQS, DQSL, DQSU, DQS, DQSL have to reach VSEHmin / VSELmax (approximately the ac-levels (VIH (ac)
/ VIL (ac)) for DQ signals) in every half-cycle preceding and following a valid transition.
Note that the applicable ac-levels for ADD/CMD and DQ’s might be different per speed-bin etc. E.g., if
VIH.CA(AC150)/VIL.CA(AC150) is used for ADD/CMD signals, then these ac-levels apply also for the single-
ended signals CK and CK.
VDD or VDDQ
VSEHmin
VSEH
VDD/2 or VDDQ/2
CK or DQS
VSELmax
VSEL
VSS or VSSQ
time
Single-ended requirements for differential signals.

Note that, while ADD/CMD and DQ signal requirements are with respect to Vref, the single-ended compo-
nents of differential signals have a requirement with respect to VDD / 2; this is nominally the same. the
transition of single-ended signals through the ac-levels is used to measure setup time. For single-ended
components of differential signals the requirement to reach VSELmax, VSEHmin has no bearing on timing,
but adds a restriction on the common mode characteristics of these signals.
Rev. 1.0 / Nov. 2013 22

Single-ended levels for CK, DQS, DQSL, DQSU, CK, DQS, DQSL or DQSU
DDR3-800, 1066, 1333, & 1600, 1866
Min Max
Single-ended high level for strobes (VDD / 2) + 0.175 Note 3 V 1,2
VSEH
Single-ended high level for Ck, CK (VDD /2) + 0.175 Note 3 V 1,2
Single-ended low level for strobes Note 3 (VDD / 2) - 0.175 V 1,2
VSEL
Single-ended low level for CK, CK Note 3 (VDD / 2) - 0.175 V 1,2
Notes:
1. For CK, CK use VIH/VIL (ac) of ADD/CMD; for strobes (DQS, DQS, DQSL, DQSL, DQSU, DQSU) use VIH/VIL (ac)
of DQs.
2. VIH (ac)/VIL (ac) for DQs is based on VREFDQ; VIH (ac)/VIL (ac) for ADD/CMD is based on VREFCA; if a reduced
ac-high or ac-low level is used for a signal group, then the reduced level applies also here.
3. These values are not defined; however, the single-ended signals Ck, CK, DQS, DQS, DQSL, DQSL, DQSU, DQSU
need to be within the respective limits (VIH (dc) max, VIL (dc) min) for single-ended signals as well as the limita-
tions for overshoot and undershoot. Refer to "Overshoot and Undershoot Specifications" on page 30.
Rev. 1.0 / Nov. 2013 23

Differential Input Cross Point Voltage
To guarantee tight setup and hold times as well as output skew parameters with respect to clock and
strobe, each cross point voltage of differential input signals (CK, CK and DQS, DQS) must meet the
requirements in table below. The differential input cross point voltage VIX is measured from the actual
cross point of true and complement signals to the midlevel between of VDD and VSS
Vix Definition
Cross point voltage for differential input signals (CK, DQS)

DDR3-800, 1066, 1333, 1600, 1866
Min Max
Differential Input Cross Point Voltage -150 150 mV 2
VIX(CK)
relative to VDD/2 for CK, CK -175 175 mV 1
Differential Input Cross Point Voltage
VIX(DQS) -150 150 mV 2
relative to VDD/2 for DQS, DQS
Notes:
1. Extended range for VIX is only allowed for clock and if single-ended clock input signals CK and CK are monotonic
with a single-ended swing VSEL / VSEH of at least VDD/2 +/-250 mV, and when the differential slew rate of CK -
CK is larger than 3 V/ns.
2. The relation between Vix Min/Max and VSEL/VSEH should satisfy following.
(VDD/2) + Vix (Min) - VSEL  25mV 
VSEH - ((VDD/2) + Vix (Max))  25mV
Rev. 1.0 / Nov. 2013 24

Slew Rate Definitions for Single-Ended Input Signals
See 7.5 “Address / Command Setup, Hold and Derating” in “DDR3 Device Operation” for single-ended slew
rate definitions for address and command signals.

See 7.6 “Data Setup, Hold and Slew Rate Derating” in “DDR3 Device Operation” for single-ended slew rate
definition for data signals.
Slew Rate Definitions for Differential Input Signals

Input slew rate for differential signals (CK, CK and DQS, DQS) are defined and measured as shown in table
and figure below.
Differential Input Slew Rate Definition
Measured
Description Defined by
Min Max
Differential input slew rate for rising edge
VILdiffmax VIHdiffmin [VIHdiffmin-VILdiffmax] / DeltaTRdiff
(CK-CK and DQS-DQS)
Differential input slew rate for falling edge
VIHdiffmin VILdiffmax [VIHdiffmin-VILdiffmax] / DeltaTFdiff
(CK-CK and DQS-DQS)
Notes:
The differential signal (i.e. CK-CK and DQS-DQS) must be linear between these thresholds.
Differential Input Voltage (i.e. DQS-DQS; CK-CK)
Delta
TRdiff
VIHdiffmin
VILdiffmax
Delta
TFdiff
Differential Input Slew Rate Definition for DQS, DQS and CK, CK
Rev. 1.0 / Nov. 2013 25

AC & DC Output Measurement Levels
Single Ended AC and DC Output Levels
Table below shows the output levels used for measurements of single ended signals.
Single-ended AC and DC Output Levels
DDR3-800, 1066,
1333, 1600, 1866
VOH(DC) DC output high measurement level (for IV curve linearity) 0.8 x VDDQ V
VOM(DC) DC output mid measurement level (for IV curve linearity) 0.5 x VDDQ V
VOL(DC) DC output low measurement level (for IV curve linearity) 0.2 x VDDQ V
VOH(AC) AC output high measurement level (for output SR) VTT + 0.1 x VDDQ V 1
VOL(AC) AC output low measurement level (for output SR) VTT - 0.1 x VDDQ V 1
Notes:
1. The swing of ±0.1 x VDDQ is based on approximately 50% of the static single ended output high or low swing with
a driver impedance of 40 Ω and an effective test load of 25 Ω to VTT = VDDQ / 2.
Differential AC and DC Output Levels

Table below shows the output levels used for measurements of single ended signals.
Differential AC and DC Output Levels
DDR3-800, 1066,
1333, 1600, 1866
VOHdiff (AC) AC differential output high measurement level (for output SR) + 0.2 x VDDQ V 1
VOLdiff (AC) AC differential output low measurement level (for output SR) - 0.2 x VDDQ V 1
Notes:
1. The swing of ±0.2 x VDDQ is based on approximately 50% of the static differential output high or low swing with
a driver impedance of 40 Ω and an effective test load of 25 Ω to VTT = VDDQ/2 at each of the differential outputs.
Rev. 1.0 / Nov. 2013 26

Single Ended Output Slew Rate
When the Reference load for timing measurements, output slew rate for falling and rising edges is defined
and measured between VOL(AC) and VOH(AC) for single ended signals are shown in table and figure below.
Single-ended Output slew Rate Definition
Measured
From To
Single-ended output slew rate for rising edge VOL(AC) VOH(AC) [VOH(AC)-VOL(AC)] / DeltaTRse
Single-ended output slew rate for falling edge VOH(AC) VOL(AC) [VOH(AC)-VOL(AC)] / DeltaTFse
Notes:
1. Output slew rate is verified by design and characterisation, and may not be subject to production test.
Delta TRse
Single Ended Output Voltage(l.e.DQ)
VOH(AC)
V∏
VOl(AC)
Delta TFse
Single Ended Output slew Rate Definition
Output Slew Rate (single-ended)

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866
Units
Parameter Symbol Min Max Min Max Min Max Min Max Min Max
Single-ended Output Slew Rate SRQse 2.5 5 2.5 5 2.5 5 2.5 5 2.5 51) V/ns
Description: SR; Slew Rate
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)
se: Single-ended Signals
For Ron = RZQ/7 setting
Note 1): In two cases, a maximum slew rate of 6V/ns applies for a single DQ signal within a byte lane.
Case 1 is a defined for a single DQ signal within a byte lane which is switching into a certain direction (either from high
to low or low to high) while all remaining DQ signals in the same byte lane are static (i.e. they stay at either high or low).
Case 2 is a defined for a single DQ signal within a byte lane which is switching into a certain direction (either from high
to low or low to high) while all remaining DQ signals in the same byte lane switching into the opposite direction (i.e. from
low to high of high to low respectively). For the remaining DQ signal switching in to the opposite direction, the regular
maximum limite of 5 V/ns applies.
Rev. 1.0 / Nov. 2013 27

Differential Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined
and measured between VOLdiff (AC) and VOHdiff (AC) for differential signals as shown in table and figure
below.
Differential Output Slew Rate Definition
Measured
From To
Differential output slew rate for rising edge VOLdiff (AC) VOHdiff (AC) [VOHdiff (AC)-VOLdiff (AC)] / DeltaTRdiff
Differential output slew rate for falling edge VOHdiff (AC) VOLdiff (AC) [VOHdiff (AC)-VOLdiff (AC)] / DeltaTFdiff
Notes:
1. Output slew rate is verified by design and characterization, and may not be subject to production test.
Delta
TRdiff
Differential Output Voltage(i.e. DQS-DQS)
VOHdiff(AC)
VOLdiff(AC)
Delta
TFdiff
Differential Output slew Rate Definition
Differential Output Slew Rate

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866
Units
Parameter Symbol Min Max Min Max Min Max Min Max Min Max
Differential Output Slew Rate SRQdiff 5 10 5 10 5 10 5 10 5 12 V/ns
Description: SR; Slew Rate
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)
se: Single-ended Signals
For Ron = RZQ/7 setting
Rev. 1.0 / Nov. 2013 28

Reference Load for AC Timing and Output Slew Rate
Figure Below represents the effective reference load of 25 ohms used in defining the relevant AC timing
parameters of the device as well as output slew rate measurements.
It is not intended as a precise representation of any particular system environment or a depiction of the
actual load presented by a production tester. System designers should use IBIS or other simulation tools to
correlate the timing reference load to a system environment. Manufacturers correlate to their production
test conditions, generally one or more coaxial transmission lines terminated at the tester electronics.
VDDQ
25 Ohm
CK, CK DQ
DUT VTT = VDDQ/2
DQS
DQS
Reference Load for AC Timing and Output Slew Rate
Rev. 1.0 / Nov. 2013 29

Overshoot and Undershoot Specifications
Address and Control Overshoot and Undershoot Specifications
AC Overshoot/Undershoot Specification for Address and Control Pins
DDR3- DDR3- DDR3- DDR3- DDR3-
Parameter Units
800 1066 1333 1600 1866
Maximum peak amplitude allowed for overshoot area. (See Figure below) 0.4 0.4 0.4 0.4 0.4 V
Maximum peak amplitude allowed for undershoot area. (See Figure below) 0.4 0.4 0.4 0.4 0.4 V
Maximum overshoot area above VDD (See Figure below) 0.67 0.5 0.4 0.33 0.28 V-ns
Maximum undershoot area below VSS (See Figure below) 0.67 0.5 0.4 0.33 0.28 V-ns
(A0-A15, BA0-BA3, CS, RAS, CAS, WE, CKE, ODT)
See figure below for each parameter definition
Maximum Amplitude
Overshoot Area
VDD
Volts
(V)
VSS
Undershoot Area
Maximum Amplitude
Time (ns)
Address and Control Overshoot and Undershoot Definition
Rev. 1.0 / Nov. 2013 30

Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications
AC Overshoot/Undershoot Specification for Clock, Data, Strobe and Mask
DDR3- DDR3- DDR3- DDR3- DDR3-
Parameter Units
800 1066 1333 1600 1866
Maximum peak amplitude allowed for overshoot area. (See Figure below) 0.4 0.4 0.4 0.4 0.4 V
Maximum peak amplitude allowed for undershoot area. (See Figure below) 0.4 0.4 0.4 0.4 0.4 V
Maximum overshoot area above VDD (See Figure below) 0.25 0.19 0.15 0.13 0.11 V-ns
Maximum undershoot area below VSS (See Figure below) 0.25 0.19 0.15 0.13 0.11 V-ns
(CK, CK, DQ, DQS, DQS, DM)
See figure below for each parameter definition
Maximum Amplitude
Overshoot Area
VDDQ
Volts
(V)
VSSQ
Undershoot Area
Maximum Amplitude
Time (ns)
Clock, Data, Strobe and Mask Overshoot and Undershoot Definition
Rev. 1.0 / Nov. 2013 31

Refresh parameters by device density
Refresh parameters by device density
Parameter RTT_Nom Setting 512Mb 1Gb 2Gb 4Gb 8Gb Units Notes
REF command ACT or
tRFC 90 110 160 260 350 ns
REF command time
Average periodic 0 C  TCASE  85 C 7.8 7.8 7.8 7.8 7.8 us
tREFI
refresh interval 85 C  TCASE  95 C 3.9 3.9 3.9 3.9 3.9 us
Notes:
1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices
support the following options or requirements referred to in this materia.
Rev. 1.0 / Nov. 2013 32

Standard Speed Bins
DDR3 SDRAM Standard Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
DDR3-800 Speed Bins

For specific Notes See "Speed Bin Table Notes" on page 38.
Speed Bin DDR3-800E

Unit Notes
CL - nRCD - nRP 6-6-6
Parameter Symbol min max
Internal read command to first data tAA 15 20 ns
ACT to internal read or write delay time tRCD 15 — ns
PRE command period tRP 15 — ns
ACT to ACT or REF command period tRC 52.5 — ns
ACT to PRE command period tRAS 37.5 9 * tREFI ns
CL = 6 CWL = 5 tCK(AVG) 2.5 3.3 ns 1, 2, 3

Supported CL Settings 6 nCK
Supported CWL Settings 5 nCK
Rev. 1.0 / Nov. 2013 33

DDR3-1066 Speed Bins
Speed Bin DDR3-1066F

Unit Note
Internal read command to
tAA 13.125 20 ns
first data
ACT to internal read or

tRCD 13.125 — ns
write delay time
PRE command period tRP 13.125 — ns
ACT to ACT or REF

tRC 50.625 — ns
command period
ACT to PRE command

tRAS 37.5 9 * tREFI ns
period
CWL = 5 tCK(AVG) 2.5 3.3 ns 1, 2, 3, 6
CL = 6
CWL = 6 tCK(AVG) Reserved ns 1, 2, 3, 4
CWL = 5 tCK(AVG) Reserved ns 4
CL = 7
CWL = 6 tCK(AVG) 1.875 < 2.5 ns 1, 2, 3, 4
CL = 8
CWL = 6 tCK(AVG) 1.875 < 2.5 ns 1, 2, 3
Supported CL Settings 6, 7, 8 nCK
Supported CWL Settings 5, 6 nCK
Rev. 1.0 / Nov. 2013 34

Speed Bin DDR3-1333H

Unit Note
Internal read command 13.5
tAA 20 ns
to first data (13.125)5,10
13.5
ACT to internal read or
tRCD (13.125)5,10 — ns
write delay time
13.5
PRE command period tRP (13.125)5,10 — ns
49.5
ACT to ACT or REF
tRC (49.125)5,10 — ns
command period
ACT to PRE command

tRAS 36 9 * tREFI ns
period
CWL = 5 tCK(AVG) 2.5 3.3 ns 1, 2, 3, 7
CL = 6 CWL = 6 tCK(AVG) Reserved ns 1, 2, 3, 4, 7
1.875 < 2.5
CL = 7 CWL = 6 tCK(AVG) ns 1, 2, 3, 4, 7
(Optional)5,10
CL = 8 CWL = 6 tCK(AVG) 1.875 < 2.5 ns 1, 2, 3, 7
CWL = 5, 6 tCK(AVG) Reserved ns 4
CL = 9
CWL = 7 tCK(AVG) 1.5 <1.875 ns 1, 2, 3, 4
CL = 10 1.5 <1.875 ns 1, 2, 3
CWL = 7 tCK(AVG)
(Optional) ns
Supported CL Settings 6, (7), 8, 9, (10) nCK
Supported CWL Settings 5, 6, 7 nCK
Rev. 1.0 / Nov. 2013 35

Speed Bin DDR3-1600K

Unit Note
CL - nRCD - nRP 11-11-11
Internal read command to first 13.75
tAA 20 ns
data (13.125)5,10
ACT to internal read or write 13.75
tRCD — ns
delay time (13.125)5,10
13.75
PRE command period tRP — ns
(13.125)5,10
ACT to ACT or REF command 48.75
tRC — ns
period (48.125)5,10
ACT to PRE command period tRAS 35 9 * tREFI ns
CWL = 5 tCK(AVG) 2.5 3.3 ns 1, 2, 3, 8

1.875 < 2.5
CWL = 6 tCK(AVG) ns 1, 2, 3, 4, 8
CL = 7 (Optional)5,10
CWL = 7 tCK(AVG) Reserved ns 1, 2, 3, 4, 8
CWL = 6 tCK(AVG) 1.875 < 2.5 ns 1, 2, 3, 8
CL = 8
1.5 <1.875
CL = 9 CWL = 7 tCK(AVG) ns 1, 2, 3, 4, 8
(Optional)5,10
CL = 10 CWL = 7 tCK(AVG) 1.5 <1.875 ns 1, 2, 3, 8
CWL = 8 tCK(AVG) Reserved ns 1,2,3,4
CWL = 5, 6,7 tCK(AVG) Reserved ns 4
CL = 11
CWL = 8 tCK(AVG) 1.25 <1.5 ns 1, 2, 3
Supported CL Settings 6, (7), 8, (9), 10, 11 nCK
Supported CWL Settings 5, 6, 7, 8 nCK
Rev. 1.0 / Nov. 2013 36

Speed Bin DDR3-1866M
Unit Note
CL - nRCD - nRP 13-13-13
Internal read command 13.91
tAA (13.125)5,11 20 ns
to first data
ACT to internal read or 13.91
tRCD (13.125)5,11 — ns
write delay time
13.91
PRE command period tRP (13.125)5,11 — ns
ACT to PRE command

tRAS 34 9 * tREFI ns
period
ACT to ACT or PRE 47.91
tRC (47.125)5,11 - ns
command period
CWL = 5 tCK(AVG) 2.5 3.3 ns 1, 2, 3, 9
CWL = 7,8,9 tCK(AVG) Reserved ns 4
1.875 < 2.5
CL = 7 CWL = 6 tCK(AVG) ns 1, 2, 3, 4, 9
(Optinal)
CWL = 6 tCK(AVG) 1.875 < 2.5 ns 1, 2, 3, 9
CL = 8
CWL = 8,9 tCK(AVG) Reserved ns 4
1.5 <1.875
CWL = 7 tCK(AVG) ns 1, 2, 3, 4, 9
CL = 9 (Optinal)
CL = 10 CWL = 7 tCK(AVG) 1.5 <1.875 ns 1, 2, 3, 9
1.25 <1.5
CL = 11 CWL = 8 tCK(AVG) ns 1, 2, 3, 4, 9
(Optinal)
CWL = 5,6,7,8 tCK(AVG) Reserved ns 4
CL = 12
CWL = 9 tCK(AVG) Reserved ns 1,2,3,4
CWL = 5,6,7,8 tCK(AVG) Reserved ns 4
CL = 13
CWL = 9 tCK(AVG) 1.07 <1.25 ns 1, 2, 3
Supported CL Settings 6, 7, 8, 9, 10, 11, 13 nCK
Supported CWL Settings 5, 6, 7, 8, 9 nCK
Rev. 1.0 / Nov. 2013 37
Speed Bin Table Notes
Absolute Specification (TOPER; VDDQ = VDD = 1.5V +/- 0.075 V);
1. The CL setting and CWL setting result in tCK(AVG).MIN and tCK(AVG).MAX requirements. When mak-
ing a selection of tCK(AVG), both need to be fulfilled: Requirements from CL setting as well as require-
ments from CWL setting.
2. tCK(AVG).MIN limits: Since CAS Latency is not purely analog - data and strobe output are synchro-
nized by the DLL - all possible intermediate frequencies may not be guaranteed. An application should
use the next smaller JEDEC standard tCK(AVG) value (3.0, 2.5, 1.875, 1.5, or 1.25 ns) when calculat-
ing CL [nCK] = tAA [ns] / tCK(AVG) [ns], rounding up to the next ‘Supported CL’, where tCK(AVG) =
3.0 ns should only be used for CL = 5 calculation.
3. tCK(AVG).MAX limits: Calculate tCK(AVG) = tAA.MAX / CL SELECTED and round the resulting tCK(AVG)
down to the next valid speed bin (i.e. 3.3ns or 2.5ns or 1.875 ns or 1.25 ns). This result is
tCK(AVG).MAX corresponding to CL SELECTED.
4. ‘Reserved’ settings are not allowed. User must program a different value.
5. ‘Optional’ settings allow certain devices in the industry to support this setting, however, it is not a man-
datory feature. Refer to DIMM data sheet and/or the DIMM SPD information if and how this setting is
supported.
6. Any DDR3-1066 speed bin also supports functional operation at lower frequencies as shown in the
table which are not subject to Production Tests but verified by Design/Characterization.
10. DDR3 SDRAM devices supporting optional down binning to CL=7 and CL=9, and tAA/tRCD/tRP must
be 13.125 ns or lower. SPD settings must be programmed to match. For example, DDR3-1333H
devices supporting down binning to DDR3-1066F should program 13.125 ns in SPD bytes for tAAmin
(Byte 16), tRCDmin (Byte 18), and tRPmin (Byte 20). DDR3-1600K devices supporting down binning to
DDR3-1333H or DDR3-1600F should program 13.125 ns in SPD bytes for tAAmin (Byte 16), tRCDmin
(Byte 18), and tRPmin (Byte 20). Once tRP (Byte 20) is programmed to 13.125ns, tRCmin (Byte 21,23)
also should be programmed accordingly. For example, 49.125ns (tRASmin + tRPmin = 36 ns + 13.125
ns) for DDR3-1333H and 48.125ns (tRASmin + tRPmin = 35 ns + 13.125 ns) for DDR3-1600K.
11. DDR3 SDRAM devices supporting optional down binning to CL=11, CL=9 and CL=7, tAA/tRCD/tRPmin must be
13.125ns. SPD setting must be programed to match. For example, DDR3-1866 devices supporting down binning
to DDR3-1600 or DDR3-1333 or 1066 should program 13.125ns in SPD bytes for tAAmin(byte 16), tRCDmin(byte
18) and tRPmin(byte 20) is programmed to 13.125ns, tRCmin(byte 21,23) also should be programmed accord-
ingly. For example, 47.125ns (tRASmin + tRPmin = 34ns + 13.125ns)
Rev. 1.0 / Nov. 2013 38

Environmental Parameters
TOPR 0 to +55 oC 3
Operating temperature (ambient)
HOPR Operating humidity (relative) 10 to 90 %
TSTG Storage temperature -50 to +100 o 1

C
HSTG Storage humidity (without condensation) 5 to 95 % 1
PBAR Barometric Pressure (operating & storage) 105 to 69 K Pascal 1, 2
Note:
1. Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and
device functional operation at or above the conditions indicated is not implied. Expousure to absolute maximum
rating conditions for extended periods may affect reliablility.
2. Up to 9850 ft.
3. The designer must meet the case temperature specifications for individual module components.
Rev. 1.0 / Nov. 2013 39

IDD and IDDQ Specification Parameters and Test Conditions
IDD and IDDQ Measurement Conditions
In this chapter, IDD and IDDQ measurement conditions such as test load and patterns are defined. Figure
below (Measurement Setup and Test Load for IDD and IDDQ (optional) Measurements) shows the setup
and test load for IDD and IDDQ measurements.
• IDD currents (such as IDD0, IDD1, IDD2N, IDD2NT, IDD2P0, IDD2P1, IDD2Q, IDD3N, IDD3P, IDD4R,
IDD4W, IDD5B, IDD6, IDD6ET and IDD7) are measured as time-averaged currents with all VDD balls
of the DDR3 SDRAM under test tied together. Any IDDQ current is not included in IDD currents.
• IDDQ currents (such as IDDQ2NT and IDDQ4R) are measured as time-averaged currents with all
VDDQ balls of the DDR3 SDRAM under test tied together. Any IDD current is not included in IDDQ cur-
rents.
Attention: IDDQ values cannot be directly used to calculate IO power of the DDR3 SDRAM. They can
be used to support correlation of simulated IO power to actual IO power as outlined in the Figure
below (Correlation from simulated Channel IO Power to actual Channel IO Power supported by IDDQ
Measurement). In DRAM module application, IDDQ cannot be measured separately since VDD and
VDDQ are using on merged-power layer in Module PCB.
For IDD and IDDQ measurements, the following definitions apply:
• ”0” and “LOW” is defined as VIN <= VILAC(max).

• ”1” and “HIGH” is defined as VIN >= VIHAC(max).
• “MID_LEVEL” is defined as inputs are VREF = VDD/2.
• Timing used for IDD and IDDQ Measurement-Loop Patterns are provided in Table 1.
• Basic IDD and IDDQ Measurement Conditions are described in Table 2.
• Detailed IDD and IDDQ Measurement-Loop Patterns are described in Table 3 through Table 10.
• IDD Measurements are done after properly initializing the DDR3 SDRAM. This includes but is not lim-
ited to setting
RON = RZQ/7 (34 Ohm in MR1);
Qoff = 0B (Output Buffer enabled in MR1);
RTT_Nom = RZQ/6 (40 Ohm in MR1);
RTT_Wr = RZQ/2 (120 Ohm in MR2);
TDQS Feature disabled in MR1
• Attention: The IDD and IDDQ Measurement-Loop Patterns need to be executed at least one time
before actual IDD or IDDQ measurement is started.
• Define D = {CS, RAS, CAS, WE}:= {HIGH, LOW, LOW, LOW}
• Define D = {CS, RAS, CAS, WE}:= {HIGH, HIGH, HIGH, HIGH}
Rev. 1.0 / Nov. 2013 40

IDD IDDQ (optional)
VDD VDDQ
RESET
CK/CK
DDR3
SDRAM
CKE DQS, DQS RTT = 25 Ohm
CS DQ, DM, VDDQ/2
RAS, CAS, WE TDQS, TDQS
A, BA
ODT
ZQ
VSS VSSQ
Measurement Setup and Test Load for IDD and IDDQ (optional) Measurements
[Note: DIMM level Output test load condition may be different from above
Application specific IDDQ

memory channel Test Load
environment
Channel
IDDQ IDDQ
IO Power
Simulation Simulation
Simulation
Correction
Channel IO Power
Number
Correlation from simulated Channel IO Power to actual Channel IO Power supported

by IDDQ Measurement
Rev. 1.0 / Nov. 2013 41

Table 1 -Timings used for IDD and IDDQ Measurement-Loop Patterns
DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866
Symbol Unit
7-7-7 9-9-9 11-11-11 13-13-13
tCK 1.875 1.5 1.25 1.07 ns
CL 7 9 11 13 nCK
nRCD 7 9 11 13 nCK
nRC 27 33 39 45 nCK
nRAS 20 24 28 32 nCK
nRP 7 9 11 13 nCK
1KB page size 20 20 24 26 nCK
nFAW
nRRD
nRFC -512Mb 48 60 72 85 nCK
nRFC-1 Gb 59 74 88 103 nCK
nRFC- 2 Gb 86 107 128 150 nCK
nRFC- 4 Gb 139 174 208 243 nCK
nRFC- 8 Gb 187 234 280 328 nCK
Table 2 -Basic IDD and IDDQ Measurement Conditions

Symbol Description
Operating One Bank Active-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, CL: see Table 1; BL: 8a); AL: 0; CS: High between ACT and
IDD0 PRE; Command, Address, Bank Address Inputs: partially toggling according to Table 3; Data IO: MID-LEVEL;
DM: stable at 0; Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,... (see Table 3); Output Buf-
fer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details: see Table 3.
Operating One Bank Active-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, CL: see Table 1; BL: 8a); AL: 0; CS: High between ACT,
IDD1 RD and PRE; Command, Address; Bank Address Inputs, Data IO: partially toggling according to Table 4; DM:
stable at 0; Bank Activity: Cycling with on bank active at a time: 0,0,1,1,2,2,... (see Table 4); Output Buffer and
RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details: see Table 4.
Rev. 1.0 / Nov. 2013 42

Symbol Description
Precharge Standby Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
IDD2N Address Inputs: partially toggling according to Table 5; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all
banks closed; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details:
see Table 5.
Precharge Standby ODT Current
IDD2NT Address Inputs: partially toggling according to Table 6; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all
banks closed; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: toggling according to Table 6;
Pattern Details: see Table 6.
Precharge Power-Down Current Slow Exit
CKE: Low; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
IDD2P0
Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks closed; Output Buf-
fer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Precharge Power Down Mode: Slow Exitc)
Precharge Power-Down Current Fast Exit
IDD2P1
fer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Precharge Power Down Mode: Fast Exitc)
Precharge Quiet Standby Current
IDD2Q
fer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0

Active Standby Current
IDD3N Address Inputs: partially toggling according to Table 5; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all
banks open; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details: see
Table 5.
Active Power-Down Current
IDD3P
Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks open; Output Buffer
and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0
Rev. 1.0 / Nov. 2013 43

Symbol Description
Operating Burst Read Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: High between RD; Command, Address,
Bank Address Inputs: partially toggling according to Table 7; Data IO: seamless read data burst with different
IDD4R
data between one burst and the next one according to Table 7; DM: stable at 0; Bank Activity: all banks open,
RD commands cycling through banks: 0,0,1,1,2,2,...(see Table 7); Output Buffer and RTT: Enabled in Mode
Registersb); ODT Signal: stable at 0; Pattern Details: see Table 7.

Operating Burst Write Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: High between WR; Command, Address,
Bank Address Inputs: partially toggling according to Table 8; Data IO: seamless read data burst with different
IDD4W
data between one burst and the next one according to Table 8; DM: stable at 0; Bank Activity: all banks open,
WR commands cycling through banks: 0,0,1,1,2,2,...(see Table 8); Output Buffer and RTT: Enabled in Mode
Registersb); ODT Signal: stable at HIGH; Pattern Details: see Table 8.

Burst Refresh Current
CKE: High; External clock: On; tCK, CL, nRFC: see Table 1; BL: 8a); AL: 0; CS: High between REF; Command,
IDD5B Address, Bank Address Inputs: partially toggling according to Table 9; Data IO: MID_LEVEL; DM: stable at 0;
Bank Activity: REF command every nREF (see Table 9); Output Buffer and RTT: Enabled in Mode Registersb);
ODT Signal: stable at 0; Pattern Details: see Table 9.
Self-Refresh Current: Normal Temperature Range
TCASE: 0 - 85 oC; Auto Self-Refresh (ASR): Disabledd);Self-Refresh Temperature Range (SRT): Normale); CKE:
IDD6 Low; External clock: Off; CK and CK: LOW; CL: see Table 1; BL: 8a); AL: 0; CS, Command, Address, Bank
Address Inputs, Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: Self-Refresh operation; Output Buffer
and RTT: Enabled in Mode Registersb); ODT Signal: MID_LEVEL

Self-Refresh Current: Extended Temperature Range
TCASE: 0 - 95 oC; Auto Self-Refresh (ASR): Disabledd);Self-Refresh Temperature Range (SRT): Extendede);
IDD6ET CKE: Low; External clock: Off; CK and CK: LOW; CL: see Table 1; BL: 8a); AL: 0; CS, Command, Address, Bank
Address Inputs, Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: Extended Temperature Self-Refresh
operation; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: MID_LEVEL
Rev. 1.0 / Nov. 2013 44

Symbol Description
Operating Bank Interleave Read Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, NRRD, nFAW, CL: see Table 1; BL: 8a),f); AL: CL-1; CS:
High between ACT and RDA; Command, Address, Bank Address Inputs: partially toggling according to Table
IDD7 10; Data IO: read data burst with different data between one burst and the next one according to Table 10;
DM: stable at 0; Bank Activity: two times interleaved cycling through banks (0, 1,...7) with different address-
ing, wee Table 10; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern
Details: see Table 10.
a) Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00B

b) Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_Nom enable: set MR1 A[9,6,2] = 011B;
RTT_Wr enable: set MR2 A[10,9] = 10B
c) Precharge Power Down Mode: set MR0 A12=0B for Slow Exit or MR0 A12 = 1B for Fast Exit
d) Auto Self-Refresh (ASR): set MR2 A6 = 0B to disable
e) Self-Refresh Temperature Range (SRT): set MR2 A7 = 0B for normal or 1B for extended temperature range
f) Read Burst Type: Nibble Sequential, set MR0 A[3] = 0B
Rev. 1.0 / Nov. 2013 45

Table 3 - IDD0 Measurement-Loop Patterna)
Command
Number
Sub-Loop
A[15:11]
BA[2:0]
A[9:7]
A[6:3]
CK, CK
A[2:0]
A[10]
Cycle
ODT
RAS
CAS
CKE
WE
Datab)
CS
0 0 ACT 0 0 1 1 0 0 00 0 0 0 0 -
1,2 D, D 1 0 0 0 0 0 00 0 0 0 0 -
3,4 D, D 1 1 1 1 0 0 00 0 0 0 0 -
... repeat pattern 1...4 until nRAS - 1, truncate if necessary
nRAS PRE 0 0 1 0 0 0 00 0 0 0 0 -
... repeat pattern 1...4 until nRC - 1, truncate if necessary
1*nRC+0 ACT 0 0 1 1 0 0 00 0 0 F 0 -
1*nRC+1, 2 D, D 1 0 0 0 0 0 00 0 0 F 0 -
Static High
1*nRC+3, 4 D, D 1 1 1 1 0 0 00 0 0 F 0 -
toggling
... repeat pattern 1...4 until 1*nRC + nRAS - 1, truncate if necessary

1*nRC+nRAS PRE 0 0 1 0 0 0 00 0 0 F 0 -
... repeat pattern 1...4 until 2*nRC - 1, truncate if necessary
1 2*nRC repeat Sub-Loop 0, use BA[2:0] = 1 instead
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Rev. 1.0 / Nov. 2013 46

Command
Number
Sub-Loop
A[15:11]
BA[2:0]
A[9:7]
A[6:3]
CK, CK
A[2:0]
A[10]
Cycle
ODT
RAS
CAS
CKE
WE
Datab)
CS
0 0 ACT 0 0 1 1 0 0 00 0 0 0 0 -
1,2 D, D 1 0 0 0 0 0 00 0 0 0 0 -
3,4 D, D 1 1 1 1 0 0 00 0 0 0 0 -
... repeat pattern 1...4 until nRCD - 1, truncate if necessary
nRCD RD 0 1 0 1 0 0 00 0 0 0 0 00000000
... repeat pattern 1...4 until nRAS - 1, truncate if necessary
nRAS PRE 0 0 1 0 0 0 00 0 0 0 0 -
... repeat pattern 1...4 until nRC - 1, truncate if necessary
1*nRC+0 ACT 0 0 1 1 0 0 00 0 0 F 0 -
1*nRC+1,2 D, D 1 0 0 0 0 0 00 0 0 F 0 -
Static High
1*nRC+3,4 D, D 1 1 1 1 0 0 00 0 0 F 0 -
toggling
... repeat pattern nRC + 1,...4 until nRC + nRCE - 1, truncate if necessary
1*nRC+nRCD RD 0 1 0 1 0 0 00 0 0 F 0 00110011
... repeat pattern nRC + 1,...4 until nRC + nRAS - 1, truncate if necessary
1*nRC+nRAS PRE 0 0 1 0 0 0 00 0 0 F 0 -
... repeat pattern nRC + 1,...4 until *2 nRC - 1, truncate if necessary
a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID_LEVEL.
Rev. 1.0 / Nov. 2013 47

Table 5 - IDD2N and IDD3N Measurement-Loop Patterna)
Command
Number
Sub-Loop
A[15:11]
BA[2:0]
A[9:7]
A[6:3]
CK, CK
A[2:0]
A[10]
Cycle
ODT
RAS
CAS
CKE
WE
Datab)
CS
0 0 D 1 0 0 0 0 0 0 0 0 0 0 -
1 D 1 0 0 0 0 0 0 0 0 0 0 -
2 D 1 1 1 1 0 0 0 0 0 F 0 -
3 D 1 1 1 1 0 0 0 0 0 F 0 -
Static High
1 4-7 repeat Sub-Loop 0, use BA[2:0] = 1 instead

toggling

Table 6 - IDD2NT and IDDQ2NT Measurement-Loop Patterna)

Command
Number
Sub-Loop
A[15:11]
BA[2:0]
A[9:7]
A[6:3]
CK, CK
A[2:0]
A[10]
Cycle
ODT
RAS
CAS
CKE
WE
Datab)
CS
0 0 D 1 0 0 0 0 0 0 0 0 0 0 -
1 D 1 0 0 0 0 0 0 0 0 0 0 -
2 D 1 1 1 1 0 0 0 0 0 F 0 -
3 D 1 1 1 1 0 0 0 0 0 F 0 -
Static High
1 4-7 repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 1

toggling

Rev. 1.0 / Nov. 2013 48

Table 7 - IDD4R and IDDQ4R Measurement-Loop Patterna)
Command
Number
Sub-Loop
A[15:11]
BA[2:0]
A[9:7]
A[6:3]
CK, CK
A[2:0]
A[10]
Cycle
ODT
RAS
CAS
CKE
WE
Datab)
CS
0 0 RD 0 1 0 1 0 0 00 0 0 0 0 00000000
1 D 1 0 0 0 0 0 00 0 0 0 0 -
2,3 D,D 1 1 1 1 0 0 00 0 0 0 0 -
4 RD 0 1 0 1 0 0 00 0 0 F 0 00110011
5 D 1 0 0 0 0 0 00 0 0 F 0 -
Static High
6,7 D,D 1 1 1 1 0 0 00 0 0 F 0 -
toggling
1 8-15 repeat Sub-Loop 0, but BA[2:0] = 1

b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL.
Table 8 - IDD4W Measurement-Loop Patterna)

Command
Number
Sub-Loop
A[15:11]
BA[2:0]
A[9:7]
A[6:3]
CK, CK
A[2:0]
A[10]
Cycle
ODT
RAS
Datab)
CAS
CKE
WE
CS
0 0 WR 0 1 0 0 1 0 00 0 0 0 0 00000000
1 D 1 0 0 0 1 0 00 0 0 0 0 -
2,3 D,D 1 1 1 1 1 0 00 0 0 0 0 -
4 WR 0 1 0 0 1 0 00 0 0 F 0 00110011
5 D 1 0 0 0 1 0 00 0 0 F 0 -
Static High
6,7 D,D 1 1 1 1 1 0 00 0 0 F 0 -
toggling

a) DM must be driven LOW all the time. DQS, DQS are used according to WR Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Write Command. Outside burst operation, DQ signals are MID-LEVEL.
Rev. 1.0 / Nov. 2013 49

Table 9 - IDD5B Measurement-Loop Patterna)
Command
Number
Sub-Loop
A[15:11]
BA[2:0]
A[9:7]
A[6:3]
CK, CK
A[2:0]
A[10]
Cycle
ODT
RAS
CAS
CKE
WE
Datab)
CS
0 0 REF 0 0 0 1 0 0 0 0 0 0 0 -
1 1.2 D, D 1 0 0 0 0 0 00 0 0 0 0 -
3,4 D, D 1 1 1 1 0 0 00 0 0 F 0 -
5...8 repeat cycles 1...4, but BA[2:0] = 1
Static High

toggling

2 33...nRFC-1 repeat Sub-Loop 1, until nRFC - 1. Truncate, if necessary.
Rev. 1.0 / Nov. 2013 50

ATTENTION! Sub-Loops 10-19 have inverse A[6:3] Pattern and Data Pattern than Sub-Loops 0-9
Command
Number
Sub-Loop
A[15:11]
BA[2:0]
A[9:7]
A[6:3]
CK, CK
A[2:0]
A[10]
Cycle
ODT
RAS
Datab)
CKE
CAS
WE
CS
0 0 ACT 0 0 1 1 0 0 00 0 0 0 0 -
1 RDA 0 1 0 1 0 0 00 1 0 0 0 00000000
2 D 1 0 0 0 0 0 00 0 0 0 0 -
... repeat above D Command until nRRD - 1
nRRD ACT 0 0 1 1 0 1 00 0 0 F 0 -
nRRD+1 RDA 0 1 0 1 0 1 00 1 0 F 0 00110011
1
nRRD+2 D 1 0 0 0 0 1 00 0 0 F 0 -
... repeat above D Command until 2* nRRD - 1
2 2*nRRD repeat Sub-Loop 0, but BA[2:0] = 2
3 3*nRRD repeat Sub-Loop 1, but BA[2:0] = 3
4*nRRD D 1 0 0 0 0 3 00 0 0 F 0 -
4
Assert and repeat above D Command until nFAW - 1, if necessary
5 nFAW repeat Sub-Loop 0, but BA[2:0] = 4
6 nFAW+nRRD repeat Sub-Loop 1, but BA[2:0] = 5
7 nFAW+2*nRRD repeat Sub-Loop 0, but BA[2:0] = 6
8 nFAW+3*nRRD repeat Sub-Loop 1, but BA[2:0] = 7
nFAW+4*nRRD D 1 0 0 0 0 7 00 0 0 F 0 -
Static High
9
toggling
Assert and repeat above D Command until 2* nFAW - 1, if necessary

2*nFAW+0 ACT 0 0 1 1 0 0 00 0 0 F 0 -
2*nFAW+1 RDA 0 1 0 1 0 0 00 1 0 F 0 00110011
10
D 1 0 0 0 0 0 00 0 0 F 0 -
2&nFAW+2
Repeat above D Command until 2* nFAW + nRRD - 1
2*nFAW+nRRD ACT 0 0 1 1 0 1 00 0 0 0 0 -
2*nFAW+nRRD+1 RDA 0 1 0 1 0 1 00 1 0 0 0 00000000
11
D 1 0 0 0 0 1 00 0 0 0 0 -
2&nFAW+nRRD+2
Repeat above D Command until 2* nFAW + 2* nRRD - 1
12 2*nFAW+2*nRRD repeat Sub-Loop 10, but BA[2:0] = 2
D 1 0 0 0 0 3 00 0 0 0 0 -
14 2*nFAW+4*nRRD
15 3*nFAW repeat Sub-Loop 10, but BA[2:0] = 4
16 3*nFAW+nRRD repeat Sub-Loop 11, but BA[2:0] = 5
D 1 0 0 0 0 7 00 0 0 0 0 -
19 3*nFAW+4*nRRD
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL.
Rev. 1.0 / Nov. 2013 51

IDD Specifications (Tcase: 0 to 95oC)
* Module IDD values in the datasheet are only a calculation based on the component IDD spec.
The actual measurements may vary according to DQ loading cap.
4GB, 512M x 64 U-DIMM: HMT451U6BFR8C
Symbol DDR3 1066 DDR3 1333 DDR3 1600 DDR3 1866 Unit note
IDD0 232 240 240 264 mA
IDD1 296 304 304 328 mA
IDD2N 136 136 144 160 mA
IDD2NT 160 168 176 200 mA
IDD2P0 88 88 88 96 mA
IDD2P1 88 88 88 96 mA
IDD2Q 128 128 136 152 mA
IDD3N 168 168 176 192 mA
IDD3P 120 120 120 128 mA
IDD4R 520 600 640 720 mA
IDD4W 544 640 680 800 mA
IDD5B 1120 1120 1120 1120 mA
IDD6 104 104 104 104 mA
IDD6ET 128 128 128 128 mA
IDD7 920 1040 1080 1160 mA
4GB, 512M x 72 U-DIMM: HMT451U7BFR8C

IDD0 261 270 270 297 mA
IDD1 333 342 342 369 mA
IDD2N 153 153 162 180 mA
IDD2NT 180 189 198 225 mA
IDD2P0 99 99 99 108 mA
IDD2P1 99 99 99 108 mA
IDD2Q 144 144 153 171 mA
IDD3N 189 189 198 216 mA
IDD3P 135 135 135 144 mA
IDD4R 585 675 720 855 mA
IDD4W 612 720 765 900 mA
IDD5B 1260 1260 1260 1260 mA
IDD6 117 117 117 117 mA
IDD6ET 144 144 144 144 mA
IDD7 1035 1170 1215 1305 mA
Rev. 1.0 / Nov. 2013 52

8GB, 1G x 64 U-DIMM: HMT41GU6BFR8C
IDD0 368 376 416 156 mA
IDD1 432 440 480 520 mA
IDD2N 272 272 288 320 mA
IDD2NT 320 335 352 400 mA
IDD2P0 176 176 176 192 mA
IDD2P1 176 176 176 192 mA
IDD2Q 256 256 272 304 mA
IDD3N 336 336 352 384 mA
IDD3P 240 240 240 256 mA
IDD4R 656 736 816 952 mA
IDD4W 680 776 856 992 mA
IDD5B 1256 1256 1296 1312 mA
IDD6 208 208 208 208 mA
IDD6ET 256 256 256 256 mA
IDD7 1056 1176 1256 1352 mA
8GB, 1G x 72 U-DIMM: HMT41GU7BFR8C

IDD0 414 423 468 513 mA
IDD1 486 495 540 585 mA
IDD2N 306 306 324 360 mA
IDD2NT 360 378 396 450 mA
IDD2P0 198 198 198 216 mA
IDD2P1 198 198 198 216 mA
IDD2Q 288 288 306 342 mA
IDD3N 378 378 396 432 mA
IDD3P 270 270 270 288 mA
IDD4R 738 828 918 1071 mA
IDD4W 765 873 963 1116 mA
IDD5B 1413 1413 1458 1476 mA
IDD6 234 234 234 234 mA
IDD6ET 288 288 288 288 mA
IDD7 1188 1323 1413 1521 mA
Rev. 1.0 / Nov. 2013 53

Module Dimensions
512Mx64 - HMT451U6BFR8C
Front
2.10  0.15 Min 1.45
Max R0.70
4 x 3.00  0.10 SPD

17.30
DETAIL-A 2 x  2.50  0.10
DETAIL-B
9.50
2 x 2.30  0.10
5.175 47.00 71.00
128.95
133.35
Back
Side Detail - A Detail - B

2.51mm Max 2.50 FULL R
0.80  0.05
0.3  0.15
3.80
0.35
2.50  0.20
0.05
1.00
0.3~1.0
1.50  0.10
1.27±0.10
5.00
Note:
1.  0.13 tolerance on all dimensions unless otherwise stated.
Units: millimeters
Rev. 1.0 / Nov. 2013 54

512Mx72- HMT451U7BFR8C
Front
2.10  0.15 Min 1.45
SPD Max R0.70
30.00
4 x 3.00  0.10
17.30
DETAIL-A DETAIL-B 2 x  2.50  0.10
9.50
2 x 2.30  0.10
5.175 47.00 71.00
128.95
133.35
Back

0.80  0.05
0.3  0.15
3.80
0.35
2.50  0.20
0.05
1.00
0.3~1.0
1.50  0.10
1.27±0.10
5.00
Note:
Units: millimeters
Rev. 1.0 / Nov. 2013 55

1Gx64 - HMT41GU6BFR8C
Front
2.10  0.15 Min 1.45
Max R0.70
30.00
4 x 3.00  0.10 SPD
17.30
DETAIL-A 2 x  2.50  0.10
DETAIL-B
9.50
2 x 2.30  0.10
5.175 47.00 71.00
128.95
133.35
Back

0.80  0.05
0.3  0.15
3.80
0.35
2.50  0.20
0.05
1.00
0.3~1.0
1.27±0.10 1.50  0.10

5.00
Note:
Units: millimeters
Rev. 1.0 / Nov. 2013 56

1Gx72 - HMT41GU7BFR8C
Front
2.10  0.15 Min 1.45
Max R0.70
30.00
4 x 3.00  0.10 SPD
17.30
DETAIL-A DETAIL-B 2 x  2.50  0.10
9.50
2 x 2.30  0.10
5.175 47.00 71.00
128.95
133.35
Back

0.80  0.05
0.3  0.15
3.80
0.35
2.50  0.20
0.05
1.00
0.3~1.0
1.50  0.10
1.27±0.10
5.00
Note:
Units: millimeters
Rev. 1.0 / Nov. 2013 57

Computing Ds 4Gb DDR3 (B-Ver) Based UDIMM (Rev.1.0)

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240pin DDR3 SDRAM Unbuffered DIMM

Rev. 1.0 /Nov. 2013 1

Revision No. History Draft Date Remark

1.0 1.0 version Release Nov. 2013

Rev. 1.0 / Nov. 2013 2

HMT451U6BFR8C-G7/H9/PB/RD 4GB 512Mx64 512Mx8(H5TQ4G83BFR)*8 1 X

HMT451U7BFR8C-G7/H9/PB/RD 4GB 512Mx72 512Mx8(H5TQ4G83BFR)*9 1 X

HMT41GU6BFR8C-G7/H9/PB/RD 8GB 1Gx64 512Mx8(H5TQ4G83BFR)*16 2 X

HMT41GU7BFR8C-G7/H9/PB/RD 8GB 1Gx72 512Mx8(H5TQ4G83BFR)*18 2 X

Rev. 1.0 / Nov. 2013 3

DDR3-1066 -G7 1.875 7 13.125 13.125 37.5 50.625 7-7-7

13.5 13.5 49.5

13.75 13.75 48.75

13.91 13.91 47.91

-G7 800 1066 1066

-H9 800 1066 1066 1333 1333

-PB 800 1066 1066 1333 1333 1600

-RD 800 1066 1066 1333 1333 1600 1866

2GB(1Rx16) 4GB(1Rx8) 4GB(1Rx8) 8GB(2Rx8) 8GB(2Rx8)

Refresh Method 8K/64ms 8K/64ms 8K/64ms 8K/64ms 8K/64ms

Row Address A0-A14 A0-A15 A0-A15 A0-A15 A0-A15

Column Address A0-A9 A0-A9 A0-A9 A0-A9 A0-A9

Bank Address BA0-BA2 BA0-BA2 BA0-BA2 BA0-BA2 BA0-BA2

Page Size 2KB 1KB 1KB 1KB 1KB

Rev. 1.0 / Nov. 2013 4

Rev. 1.0 / Nov. 2013 5

Rev. 1.0 / Nov. 2013 6

Rev. 1.0 / Nov. 2013 7

NC = No Connect; RFU = Reserved Future Use

Rev. 1.0 / Nov. 2013 8

60 VDD VDD 180 A32 A32

NC = No Connect; RFU = Reserved Future Use

Rev. 1.0 / Nov. 2013 9

Connection of Thermal Sensor

Temperature-to-Digital Conversion Performance

Parameter Condition Min Typ Max Unit

Temperature Sensor Accuracy (Grade B) Monitor Range,

-20°C < TA < 125°C - ± 2.0 ± 3.0 °C

Rev. 1.0 / Nov. 2013 10

Rev. 1.0 / Nov. 2013 11

Rev. 1.0 / Nov. 2013 12

Rev. 1.0 / Nov. 2013 13

Rev. 1.0 / Nov. 2013 14

Symbol Parameter Rating Units Notes

Symbol Parameter Rating Units Notes

Rev. 1.0 / Nov. 2013 15

Rev. 1.0 / Nov. 2013 16

Rev. 1.0 / Nov. 2013 17

Rev. 1.0 / Nov. 2013 18

Illustration of VRef(DC) tolerance and VRef ac-noise limits

Rev. 1.0 / Nov. 2013 19

Definition of differential ac-swing and “time above ac-level” tDVAC

Rev. 1.0 / Nov. 2013 20

Allowed time before ringback (tDVAC) for CK - CK and DQS - DQS

Rev. 1.0 / Nov. 2013 21

Single-ended requirements for differential signals.

Rev. 1.0 / Nov. 2013 22

Rev. 1.0 / Nov. 2013 23