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PD - 9.1032

IRGPC30U
INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT

Features C
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
VCES = 600V
See Fig. 1 for Current vs. Frequency curve
VCE(sat) ≤ 3.0V
G

@VGE = 15V, I C = 12A

E
n-channel

Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.

TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ T C = 25°C Continuous Collector Current 23
IC @ T C = 100°C Continuous Collector Current 12 A
ICM Pulsed Collector Current 92
ILM Clamped Inductive Load Current 92
VGE Gate-to-Emitter Voltage ±20 V
EARV Reverse Voltage Avalanche Energy 10 mJ
PD @ T C = 25°C Maximum Power Dissipation 100 W
PD @ T C = 100°C Maximum Power Dissipation 42
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case — — 1.2
RθCS Case-to-Sink, flat, greased surface — 0.24 — °C/W
RθJA Junction-to-Ambient, typical socket mount — — 40
Wt Weight — 6 (0.21) — g (oz)

Revision 0
C-675

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IRGPC30U

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, I C = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage — 0.63 — V/°C VGE = 0V, I C = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.2 3.0 IC = 12A V GE = 15V
— 2.7 — V IC = 23A See Fig. 2, 5
— 2.4 — IC = 12A, T J = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance 3.1 8.6 — S VCE = 100V, I C = 12A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, V CE = 600V
— — 1000 VGE = 0V, V CE = 600V, T J = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 29 36 IC = 12A
Qge Gate - Emitter Charge (turn-on) — 4.8 6.8 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) — 12 17 VGE = 15V
td(on) Turn-On Delay Time — 24 — TJ = 25°C
tr Rise Time — 15 — ns IC = 12A, V CC = 480V
td(off) Turn-Off Delay Time — 92 200 VGE = 15V, R G = 23Ω
tf Fall Time — 93 190 Energy losses include "tail"
Eon Turn-On Switching Loss — 0.18 —
Eoff Turn-Off Switching Loss — 0.35 — mJ See Fig. 9, 10, 11, 14
Ets Total Switching Loss — 0.53 1.0
td(on) Turn-On Delay Time — 24 — TJ = 150°C,
tr Rise Time — 15 — ns IC = 12A, V CC = 480V
td(off) Turn-Off Delay Time — 160 — VGE = 15V, R G = 23Ω
tf Fall Time — 200 — Energy losses include "tail"
Ets Total Switching Loss — 0.90 — mJ See Fig. 10, 14
LE Internal Emitter Inductance — 13 — nH Measured 5mm from package
Cies Input Capacitance — 660 — VGE = 0V
Coes Output Capacitance — 100 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 11 — ƒ = 1.0MHz

Notes:
Repetitive rating; V GE=20V, pulse width Repetitive rating; pulse width limited Pulse width 5.0µs,
limited by max. junction temperature. by maximum junction temperature. single shot.
( See fig. 13b )

VCC=80%(V CES), VGE=20V, L=10µH, Pulse width ≤ 80µs; duty factor ≤ 0.1%.
R G= 23Ω, ( See fig. 13a )

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IRGPC30U

40
F o r b o th : T ria n g u la r w a v e :
D uty c y cle: 50%
TJ = 125°C
T sink = 90° C
30 G ate driv e as spe c ified
L O A D C U R R E N T (A )

P o w e r D is s ip a tio n = 2 4 W C la m p v o lta g e :
8 0 % o f ra te d

S quare w av e:

20 6 0 % o f ra te d
vo lta g e

10

Id e a l d io d e s

0
0.1 1 10 100

f, F re q u e n c y (k H z )

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)

1000 1000
I C , Collector-to-E m itter C urrent (A)

IC , C ollector-to-E mitter C urrent (A )

100

100
TJ = 2 5°C TJ = 1 50 °C

TJ = 15 0 °C 10
TJ = 2 5°C

10

V G E = 15 V V C C = 1 00 V
20 µs P UL S E W ID TH 5 µ s P UL S E W IDTH
1 0.1
1 10 5 10 15 20
V C E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V )

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRGPC30U

25 4.0
V G E = 15 V V G E = 15 V
8 0µ s P U LS E W IDTH

V C E , C o llec to r-to-E m itter V oltage (V )

M aximum D C Collector Current (A )

3.5
20
I C = 2 4A
3.0
15

2.5

10 I C = 1 2A
2.0

5
I C = 6.0 A
1.5

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
T C , C ase Tem perature (°C ) T C , C a s e Te m p e ra ture (°C )

Fig. 4 - Maximum Collector Current vs. Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature Case Temperature

10
T he rm al R e sp ons e (Z thJ C )

1
D = 0 .5 0

0 .2 0
PD M
0 .1 0
0.1
0 .0 5 t
1
0 .0 2 t
S IN G L E P U L S E 2
0 .0 1
(T H E R M A L R E S P O N S E ) N o te s :
1 . D u ty fa c to r D = t /t
1 2
2 . P e a k T J = P D M x Z thJ C + T C
0.01
0.00001 0.0001 0.00 1 0.01 0.1 1 10

t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c )

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRGPC30U

14 0 0 20
V GE = 0V, f = 1MHz V C E = 4 00 V
C ies = C ge + C gc , Cce SHORTED I C = 12A
12 0 0 C res = C gc

V G E , G ate-to-E m itter V oltage (V)

C oes = C ce + C gc 16

10 0 0
C , Capacitance (pF )

Cies
12
800
Coes
600
8

400

Cres 4
200

0 0
1 10 100 0 5 10 15 20 25 30

V C E , C o llector-to-Em itter V oltage (V) Q g , Total G ate C harge (nC )

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

0 .6 6 10
VC C = 4 80 V R G = 23 Ω
VG E = 15 V V GE = 15 V
TC = 25 °C V CC = 4 80 V
To ta l S w itc hing Lo sse s (m J)
To ta l S w itching L osses (m J)

0 .6 4
IC = 1 2A
I C = 24 A
0 .6 2

I C = 1 2A
0 .6 0 1

I C = 6.0 A
0 .5 8

0 .5 6

0 .5 4 0.1
0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160
R G , G ate R es istance (Ω ) TC , C ase Tem perature (°C )
W

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Case Temperature

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IRGPC30U

3.0 1000
RG = 23 Ω VGGE E= 20 V
TC = 150 °C T J = 125 °C
2.5
V CC = 4 80 V

I C , C o llec to r-to-E m itter C urre nt (A )

Total Sw itching Losses (m J)

VGE = 15 V
100
2.0

S A FE O P E RA TIN G A RE A
1.5 10

1.0

1
0.5

0.0 0.1
5 10 15 20 25 1 10 100 1000
I C , C o llector-to -E m itte r Current (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V )

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current

Refer to Section D for the following:

Appendix C: Section D - page D-5

Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform

Package Outline 3 - JEDEC Outline TO-247AC Section D - page D-13

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