PD 9.

1467D

IRG4PC40UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features C

• UltraFast: Optimized for high operating VCES = 600V

frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V
G
parameter distribution and higher efficiency than
Generation 3 @VGE = 15V, IC = 20A
E
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in n-ch an nel
bridge configurations
• Industry standard TO-247AC package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
TO-247AC
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 40
IC @ TC = 100°C Continuous Collector Current 20
ICM Pulsed Collector Current  160 A
ILM Clamped Inductive Load Current ‚ 160
IF @ TC = 100°C Diode Continuous Forward Current 15
IFM Diode Maximum Forward Current 160
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 160
W
PD @ TC = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ------ ------ 0.77
RθJC Junction-to-Case - Diode ------ ------ 1.7 °C/W
RθCS Case-to-Sink, flat, greased surface ------ 0.24 ------
RθJA Junction-to-Ambient, typical socket mount ----- ----- 40
Wt Weight ------ 6 (0.21) ------ g (oz)

4/17/97
IRG4PC40UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 ---- ---- V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage ---- 1.72 2.1 IC = 20A VGE = 15V
---- 2.15 ---- V IC = 40A See Fig. 2, 5
---- 1.7 ---- IC = 20A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = V GE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = V GE, IC = 250µA
gfe Forward Transconductance „ 11 18 ---- S VCE = 100V, IC = 20A
ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 3500 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 15A See Fig. 13
---- 1.2 1.6 IC = 15A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) ---- 100 150 IC = 20A
Qge Gate - Emitter Charge (turn-on) ---- 16 25 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) ---- 40 60 VGE = 15V
td(on) Turn-On Delay Time ---- 54 ---- TJ = 25°C
tr Rise Time ---- 57 ---- ns IC = 20A, VCC = 480V
td(off) Turn-Off Delay Time ---- 110 165 VGE = 15V, RG = 10Ω
tf Fall Time ---- 80 120 Energy losses include "tail" and
Eon Turn-On Switching Loss ---- 0.71 ---- diode reverse recovery.
Eoff Turn-Off Switching Loss ---- 0.35 ---- mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss ---- 1.10 1.5
td(on) Turn-On Delay Time ---- 40 ---- TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time ---- 52 ---- ns IC = 20A, VCC = 480V
td(off) Turn-Off Delay Time ---- 200 ---- VGE = 15V, RG = 10Ω
tf Fall Time ---- 130 ---- Energy losses include "tail" and
Ets Total Switching Loss ---- 1.6 ---- mJ diode reverse recovery.
LE Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
Cies Input Capacitance ---- 2100 ---- VGE = 0V
Coes Output Capacitance ---- 140 ---- pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance ---- 34 ---- ƒ = 1.0MHz
trr Diode Reverse Recovery Time ---- 42 60 ns TJ = 25°C See Fig.
---- 74 120 TJ = 125°C 14 IF = 15A
Irr Diode Peak Reverse Recovery Current ---- 4.0 6.0 A TJ = 25°C See Fig.
---- 6.5 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge ---- 80 180 nC TJ = 25°C See Fig.
---- 220 600 TJ = 125°C 16 di/dt 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery ---- 190 ---- A/µs TJ = 25°C
During tb ---- 160 ---- TJ = 125°C
 IRG4PC40UD
30

D u ty c ycle: 5 0%
T J = 1 2 5 °C
T sin k = 90 °C
Ga te d rive a s sp e cified
Tu rn -on lo sses in clu de
Load Current (A)

effe cts of reve rse rec ov ery

20 P ow e r D issipa tion = 3 5W

6 0 % o f ra te d
v o lta g e

10

0 A
0.1 1 10 100

f, F re q u e n cy (kH z )

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

1000 1000
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)

100 100
TJ = 25°C
TJ = 150°C
T J = 150°C

T J = 25°C
10 10

V G E = 15V V C C = 10V
20µs PULSE WIDTH A 5µs PULSE WIDTH A
1 1
0.1 1 10 4 6 8 10 12

VC E , Collector-to-Emitter Voltage (V) VG E , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

IRG4PC40UD

40 2.5
V G E = 15V V G E = 15V

V C E , Collector-to-Emitter Voltage (V)

80µs PULSE WIDTH
Maximum DC Collector Current (A)

I C = 40A

30

2.0

20 I C = 20A

1.5

10 I C = 10A

0
A 1.0 A
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature (°C) T J , Junction Temperature (°C)

Fig. 4 - Maximum Collector Current vs. Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature Junction Temperature

1
Therm al Response (Z th JC )

D = 0 .5 0

0.2 0
0 .1
0.1 0
PD M

0 .05 t
1
SIN G LE P UL SE t2
0.0 2 (T H ER M A L R E SP O NS E )
N o te s:
0.0 1 1 . D u ty fa c to r D = t / t
1 2
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 1
0 .0 0 0 0 1 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10
t 1 , R ectangular Pulse Duration (sec)

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

 IRG4PC40UD

20
4000 V C E = 40 0 V
V GE = 0V, f = 1M H z
IC = 20A

V GE , G a te-to -Em itter V oltage (V )

C ie s = C ge + C gc , Cc e S H O R T E D
C re s = C gc
C oes = C ce + C gc 16
C , C apa cita nce (pF )

3000 C ie s

12

2000
C o es 8

1000 C re s
4

0 A
0 A
0 20 40 60 80 100 120
1 10 100
Q g , Total G ate C ha rge (nC )
V C E , C ollector-to-Em itter V olta ge (V)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

1.8 10
VC C = 480V R G = 10Ω
VG E = 15V V G E = 15V
TC = 25°C V C C = 480V
Total Switching Losses (mJ)

IC = 20A I C = 40A
Total Switching Losses (mJ)

1.6

I C = 20A

1.4 1

I C = 10A

1.2

1.0 A 0.1 A
0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160

R G , Gate Resistance ( Ω) TJ , Junction Temperature (°C)

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
IRG4PC40UD
5.0 1000
RG = 10 Ω VGGE E= 2 0V
TC = 150°C T J = 125 °C
V CC = 480V

I C , C ollector-to-E m itter Current (A )

Total Switching Losses (mJ)

4.0 V GE = 15V

100
3.0
S A FE O P E R A TIN G A R E A

2.0
10

1.0

0.0 A 1
0 10 20 30 40 50 1 10 100 1000
I C , Collector-to-Emitter Current (A) V C E , Collecto r-to-E m itter V oltage (V )

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100
Instantan eous Forward C urren t - I F (A )

10

TJ = 15 0 °C

TJ = 12 5 °C

TJ = 2 5 °C

1
0.8 1.2 1.6 2.0 2.4

Fo rwa rd V o ltag e Drop - V FM (V )

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

 IRG4PC40UD
100 100

V R = 200V VR = 2 0 0 V
T J = 125°C T J = 1 2 5 °C
T J = 25°C T J = 2 5 °C

80

I F = 3 0A

I IR R M - (A )
I F = 30A
t rr - (ns)

I F = 15 A
60 10
I F = 15A

I F = 5.0A
40

I F = 5.0A

20 1
100 1000 100 1000
di f /dt - (A/µs) d i f /d t - (A /µ s )
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

800 1000
VR = 2 0 0 V
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 1 2 5 °C
T J = 2 5 °C
T J = 2 5 °C

600
di(rec)M /d t - (A /µs)

I F = 3 0A
Q R R - (nC )

I F = 5 .0A
400
I F = 15 A I F = 1 5A

I F = 30 A
I F = 5 .0A

200

0 100
100 1000 100 1000
d i f /d t - (A /µ s) di f /dt - (A /µs)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt
IRG4PC40UD

90% Vge
+Vge

Same ty pe
device as Vce
D .U.T.

9 0 % Ic
10% Vce
Ic Ic
430µF 5 % Ic
80%
of Vce D .U .T.
td (o ff) tf

∫
t1 + 5 µ S
Eoff = V c e ic d t
t1

Fig. 18a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

∫
trr
G A T E V O L T A G E D .U .T . trr
Q rr = id d t
Ic
tx
1 0 % +V g
+Vg
tx
1 0 % Irr
10% Vcc
V cc
D UT VO LTAG E
Vce
AN D CU RRE NT V pk
Irr
1 0 % Ic
Vcc Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
5% Vce
td (o n ) tr

∫
t2

∫
E o n = V ce ie d t t4
t1 E re c = V d id d t
t3
t1 t2 D IO D E R E V E R S E
REC OVERY ENER GY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr
 IRG4PC40UD

V g G A T E S IG N A L
D E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O L T A G E IN D .U .T .

C U R R E N T IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 480V
RL=
4 X IC @25°C
1000V Vc* 0 - 480V
50V
6000µ F
100 V

Figure 19. Clamped Inductive Load Test Figure 20. Pulsed Collector Current
Circuit Test Circuit
IRG4PC40UD
Notes:
 Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
(figure 20)
‚ VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω (figure 19)
ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
„ Pulse width 5.0µs, single shot.

Case Outline — TO-247AC

NOTE S:
3 .6 5 (.1 4 3 ) -D-
5 .3 0 (.2 0 9 ) 1 D IM E N S IO N S & T O LE R A N C IN G
1 5 .9 0 (.6 2 6 ) 3 .5 5 (.1 4 0 ) P E R A N S I Y 14 .5M , 1 98 2 .
1 5 .3 0 (.6 0 2 ) 4 .7 0 (.1 8 5 )
0 .2 5 ( .0 1 0 ) M D B M 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
-B- -A- 2.5 0 ( .0 8 9)
3 D IM E N S IO N S A R E S H O W N
1.5 0 ( .0 5 9) M IL LIM E T E R S (IN C H E S ).
5 .5 0 (.2 17 ) 4 4 C O N F O R M S T O J E D E C O U T L IN E
T O -2 4 7A C .
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 ) 5.5 0 (.2 1 7)
2X
4.5 0 (.1 7 7) LEAD A S S IG N M E N T S
1- GAT E
1 2 3 2- COLLECTO R
3- E M IT T E R
4- COLLECTO R
-C-
1 4 .8 0 (.5 8 3 ) 4 .3 0 (.1 7 0 )
* 1 4 .2 0 (.5 5 9 ) 3 .7 0 (.1 4 5 ) * LO N G E R LE A D E D (2 0m m )
V E R S IO N A V A IL A B L E (T O -2 47 A D )
T O O R D E R A D D "-E " S U F F IX
TO PAR T NUM BER
2 .4 0 (.0 9 4 ) 1 .4 0 ( .0 56 ) 0 .8 0 (.0 3 1 )
2 .0 0 (.0 7 9 ) 3X 3X
1 .0 0 ( .0 39 ) 0 .4 0 (.0 1 6 )
2X
0.2 5 (.0 1 0 ) M C A S 2 .6 0 ( .1 0 2 )
5 .4 5 (.2 1 5 ) 2 .2 0 ( .0 8 7 )
3 .4 0 (.1 3 3 )
2X 3 .0 0 (.1 1 8 )

CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC (T O -3P)

D im e n s io n s in M illim e te rs a n d (In c h e s )

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 4/97
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/