PD -95186

IRG4PC50UPbF
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

Features C

• UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200 VCES = 600V
kHz in resonant mode
• Generation 4 IGBT design provides tighter
G VCE(on) typ. = 1.65V
parameter distribution and higher efficiency than
Generation 3
E @VGE = 15V, IC = 27A
• Industry standard TO-247AC package
• Lead-Free n-channel

Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's

TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 55
IC @ TC = 100°C Continuous Collector Current 27 A
ICM Pulsed Collector Current Q 220
ILM Clamped Inductive Load Current R 220
VGE Gate-to-Emitter Voltage ± 20 V
EARV Reverse Voltage Avalanche Energy S 20 mJ
PD @ TC = 25°C Maximum Power Dissipation 200
W
PD @ TC = 100°C Maximum Power Dissipation 78
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ---- 0.64
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ---- °C/W
RθJA Junction-to-Ambient, typical socket mount ---- 40
Wt Weight 6 (0.21) ---- g (oz)

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IRG4PC50UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage T 18 ---- ---- V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/°C VGE = 0V, IC = 1.0mA
---- 1.65 2.0 IC = 27A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage ---- 2.0 ---- IC = 55A See Fig.2, 5
V
---- 1.6 ---- IC = 27A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance U 16 24 ---- S VCE ≥ 15V, IC = 27A
ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
---- ---- 5000 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) ---- 180 270 IC = 27A
Qge Gate - Emitter Charge (turn-on) ---- 25 38 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) ---- 61 90 VGE = 15V
td(on) Turn-On Delay Time ---- 32 ----
tr Rise Time ---- 20 ---- TJ = 25°C
ns
td(off) Turn-Off Delay Time ---- 170 260 IC = 27A, VCC = 480V
tf Fall Time ---- 88 130 VGE = 15V, RG = 5.0Ω
Eon Turn-On Switching Loss ---- 0.12 ---- Energy losses include "tail"
Eoff Turn-Off Switching Loss ---- 0.54 ---- mJ See Fig. 10, 11, 13, 14
Ets Total Switching Loss ---- 0.66 0.9
td(on) Turn-On Delay Time ---- 31 ---- TJ = 150°C,
tr Rise Time ---- 23 ---- IC = 27A, VCC = 480V
ns
td(off) Turn-Off Delay Time ---- 230 ---- VGE = 15V, RG = 5.0Ω
tf Fall Time ---- 120 ---- Energy losses include "tail"
Ets Total Switching Loss ---- 1.6 ---- mJ See Fig. 13, 14
LE Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
Cies Input Capacitance ---- 4000 ---- VGE = 0V
Coes Output Capacitance ---- 250 ---- pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance ---- 52 ---- ƒ = 1.0MHz
Notes:

Q Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
(See fig. 13a) U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.

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 IRG4PC50UPbF

80
F o r b o th : T rian gu la r w a ve:
D u t y c yc le: 5 0%
T J = 1 2 5 °C
T s in k = 9 0 °C
60 G a te d r ive a s sp ec ified
P o w e r D is sip atio n = 40 W C la m p vo lta g e :
L oad C urre nt (A )

8 0 % o f ra te d

S q u are w a ve :
40 6 0 % o f ra ted
vo ltag e

20

Idea l d io des

0
A
0.1 1 10 100

f, F re qu e nc y (k H z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

1000 1000
I C , C o lle ctor-to-E m itter Cu rre n t (A )

I C , C ollec to r-to-Em itte r C u rre nt (A)

100

100

TJ = 1 5 0°C
T J = 1 5 0 °C
10

T J = 2 5 °C
T J = 2 5 °C 10

VGE = 15V V C C = 10 V
2 0 µ s P U L S E W ID T H A 5 µs P U L S E W IDTH A
0.1 1
0 1 10 4 6 8 10 12
VC E , C o lle c to r-to -E m itte r V o lta g e (V ) VG E , G a te -to -E m itte r V o lta g e (V )

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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 IRG4PC50UPbF

60
V G E = 15 V 2.5
V G E = 1 5V

V CE , C olle ctor-to-E m itte r V oltage (V)

8 0 µs P U L S E W ID TH
M aximum D C Collector Current (A )

50

IC = 5 4 A
40 2.0

30
IC = 2 7 A

20 1.5
IC = 14 A
10

0 1.0 A
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
T C , C ase Tem perature (°C) T J , Ju n c tio n Te m p e ra tu re (°C )

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Collector-to-Emitter Voltage vs.
Temperature Junction Temperature

1
T h e rm a l R e s p o n se (Z thJ C )

D = 0 .5 0

0 .2 0
0 .1
0 .1 0
PD M

0 .0 5 t
1
S IN G L E P U L S E t
(T H E R M A L R E S P O N S E ) 2
0 .0 2
N ote s :
0 .0 1 1 . D u ty f ac t or D = t /t
1 2
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 1
0 .0 0 0 0 1 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10
t 1 , R e c ta n g u la r P u ls e D ura tio n (s e c )

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRG4PC50UPbF

8000 20
V GE = 0V , f = 1M Hz VC E = 400V
C ie s = C ge + C gc , C ce SH OR T ED I C = 27A

V G E , Gate-to-Emitter Voltage (V)

C re s = C gc
C o es = C ce + C gc 16
C, Capacitance (pF)

6000
C ie s

12

4000

C oe s 8

2000 C res
4

A 0
A
0
1 10 100 0 40 80 120 160 200

VC E , C o lle c to r-to -E m itte r V o lta g e (V ) Q g , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

2.2 10
VC C = 480V R G = 5 .0 Ω
VG E = 15V V GE = 15V
2.0
TJ = 25°C V CC = 480V
To ta l S w itc h in g L os se s (m J)

IC = 27A IC = 5 4 A
Total Switching Losses (mJ)

1.8

1.6 IC = 2 7A

1.4 1
IC = 1 4 A
1.2

1.0

0.8

0.6 A 0.1 A
0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160

R G , Gate Resistance ( Ω) TJ , J u n ctio n T e m p e ra tu re (°C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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 IRG4PC50UPbF
3.0 1000
RG = 5 .0Ω VGGE E= 2 0V
TJ = 1 5 0 °C T J = 125 °C
V CC = 480V
Total Switc hing Losses (mJ )

I C , C ollector-to-E m itter Current (A )

V GE = 15V

2.0 100 S A FE O P E R A T IN G A R E A

1.0 10

0.0 A 1
0 10 20 30 40 50 1 10 100 1000
I C , C o lle cto r-to -E m itte r C u rre n t (A ) V C E , Collecto r-to-E m itter V oltage (V )

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current

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 IRG4PC50UPbF

L D .U .T.
VC * 480V
RL =
4 X IC@25°C
50V 0 - 480V
1 00 0V 480µF
960V
Q
R

* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )

* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.

Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector

Load Test Circuit Current Test Circuit

IC
L
D river* D .U .T. Fig. 14a - Switching Loss
VC Test Circuit
50V
1000V
* Driver same type
Q as D.U.T., VC = 480V
R S

9 0%

S 1 0%

VC
90 %
t d (o ff)
Fig. 14b - Switching Loss
Waveforms

10 %
IC 5%
tr tf
t d (o n ) t=5µ s
E on E o ff
E ts = ( Eo n +E o ff )

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IRG4PC50UPbF

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

E XAMPL E : T HIS IS AN IR F PE 30
WIT H AS S E MB LY PAR T NU MB E R
L OT CODE 5657 INT E R NAT IONAL
AS S E MB L E D ON WW 35, 2000 R E CT IF IE R IR F PE 30

IN T H E AS S E MB LY L INE "H" L OGO 035H

56 57
Note: "P" in assembly line DAT E CODE
position indicates "Lead-Free" AS S E MB L Y YE AR 0 = 2000
L OT CODE WE E K 35
L INE H

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/04

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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/