2SD2150

NPN
Elektronische Bauelemente
Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free

SOT-89

Features
4.4~4.6

* Excellent Current-to-Gain Characteristics 1.4~1.8

1.4~1.6
1
* Low Collector Saturation Voltage, Typically 2
3
VCE(SAT)=0.5V(Max.) for IC/IB=2A/0.1A
1.BASE

3.94~4.25

2.3~2.6
2.COLLECTOR 0.36~0.56

3.EMITTER

0.32~0.52
0.35~0.44

0.9~1.1
1.5Ref.

Marking: CFQ, CFR, CFS 2.9~3.1

Dimensision in Millimeter

o
Absolute Maximum Ratings at TA=25 C
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 3 A
PD Total Power Dissipation 500 mW
TJ,Tstg Junction and Storage Temperature -55~+150 O
C
* These rating are limiting vaules above which the serviceability of any semiconductor device may be impaired.

o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter Symbol Min Typ. Max Unit Test Conditions
Collector-Base Breakdown Voltage BVCBO 40 - - V I C=50µA,IE=0
Collector-Emitter Breakdown Voltage BVCEO 20 - - V I C=1mA,IB=0
Emitter-Base Breakdown Voltage BVEBO 6 - - V I E=50µA,IC=0
Collector-Base Cutoff Current I CBO - - 0.1 uA VCB= 30V,IE=0
Emitter-Base Cutoff Current I EBO - - 0.1 uA VEB=5V,IC=0
Collector Saturation Voltage *VCE(sat) - - 0.5 V I C=2A,IB=100mA
DC Current Gain *hFE 120 - 560 VCE= 2 V, I C=100mA
Gain-Bandwidth Product * fT - 290 - MH z VCE= 2 V, IC=500mA ,f=100MHz
Output Capacitance Cob - 25 - pF VCB=10V , f=1MHz,IE=0

*Pulse test: tp 300µS, 0.02.

CLASSIFICATION OF hFE
Rank Q R S

Range 120~270 180~390 270~560

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01-Jun-2002 Rev. A Page 1 of 2
 2SD2150
NPN
Elektronische Bauelemente
Plastic-Encapsulate Transistor

Characteristics Curve

10 2 5
VCE=2V 20mA 12mA Ta=25°C 50mA
35mA
Ta=25°C
5 18mA 45mA
10mA 30mA
16mA 40mA

COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : IC (A)

2 COLLECTOR CURRENT : IC (A) 14mA

8mA
25mA
1.6 4
1 20mA
6mA
0.5 Ta=100°C
25°C 15mA
1.2 3
0.2 −40°C
0.1 4mA
10mA
0.05 0.8 2
0.02
2mA 5mA
0.01
5m 0.4 1

2m
1m 0 IB=0A 0 IB=0A
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output
characteristics characteristics ( ) characteristics ( )

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

5000 2 1
VCE=2V IC/IB=10 lC/lB=20
1 0.5 Ta=100°C
2000
25°C
−40°C
DC CURRENT GAIN : hFE

1000 Ta=100°C 0.5 0.2

25°C
500 −40°C 0.1
0.2
Ta=100°C 0.05
200 0.1 25°C
−40°C
100 50m 0.02
50 20m 0.01
5m
20 10m

10 5m 2m
5 2m 1m
1m 2m 5m0.010.02 0.05 0.10.2 0.5 1 2 5 10 1m 2m 5m10m20m50m0.1 0.2 0.5 1 2 5 10 1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)

Fig.4 DC current gain vs. Fig.5 Collector-emitter Fig.6 Collector-emitter

collector current saturation voltage vs. saturation voltage vs.
collector current ( ) collector curren ( )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

1000
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

2 1000
EMITTER INPUT CAPACITANCE : Cib (pF)

IC/IB=20 Ta=25°C Ta=25°C

f=1MHz
TRANSITION FREQUENCY : fT (MHz)

500 VCE=2V
1 500 IE=0A
IC=0A
0.5 200
100 200 Cob
0.2
Ta=100°C 50
0.1 25°C 100
50m −40°C 20
Cob
10 50
20m
5
10m
20
5m 2

2m 1 10
1m 2m 5m10m20m50m 0.1 0.2 0.5 1 2 5 10 −1 −2 −5 −10 −20 −50−100 −200−500−1000 0.1 0.2 0.5 1 2 5 10 20 50

COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)

Fig.7 Collector-emitter Fig.8 Gain bandwidth product vs. Fig.9 Collector output capacitance vs.
saturation voltage vs. emitter current collector-base voltage
collector current ( ) Emitter input capacitance vs.
emitter-base voltage

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01-Jun-2002 Rev. A Page 2 of 2