Transistor

2SC1360, 2SC1360A
Silicon NPN epitaxial planer type

For intermadiate frequency amplification of TV image

Unit: mm

5.9±0.2 4.9±0.2

■ Features

8.6±0.2
● High transition frequency fT.
● Large collector power dissipation PC.
0.7±0.1

+0.3
0.7–0.2
■ Absolute Maximum Ratings (Ta=25˚C)
2.54±0.15
Parameter Symbol Ratings Unit

13.5±0.5
Collector to 2SC1360 50
VCBO V
base voltage 2SC1360A 60
Collector to 2SC1360 45
VCEO V
emitter voltage 2SC1360A 60 0.45–0.1
+0.2 +0.2
0.45–0.1
1.27 1.27
Emitter to base voltage VEBO 4 V
1:Emitter
Collector current IC 50 mA 2:Collector
1 2 3

3.2
3:Base
Collector power dissipation PC 1 W
EIAJ:SC–51
Junction temperature Tj 150 ˚C TO–92L Package

Storage temperature Tstg –55 ~ +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = 20V, IE = 0 100 nA
Collector to base 2SC1360 50
VCBO IC = 100µA, IE = 0 V
voltage 2SC1360A 60
Collector to emitter 2SC1360 45
VCEO IC = 1mA, IB = 0 V
voltage 2SC1360A 60
Emitter to base voltage VEBO IE = 100µA, IC = 0 4 V
Forward current transfer ratio hFE VCB = 10V, IE = –10mA 20 100
Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 2mA 0.4 V
Transition frequency fT VCB = 10V, IE = –10mA, f = 100MHz 300 MHz
Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz 1.5 pF
Power gain PG VCB = 10V, IE = –10mA, f = 58MHz 22 30 dB

1
Transistor 2SC1360, 2SC1360A

PC — Ta IC — VCE IC — VBE
1.2 80 60
25˚C VCE=10V
Collector power dissipation PC (W)

70
1.0 IB=2.0mA 50
1.8mA Ta=75˚C –25˚C

Collector current IC (mA)

Collector current IC (mA)

60
1.6mA
0.8 40
50 1.4mA

1.2mA
0.6 40 30
1.0mA
30
0.4 0.8mA 20
0.6mA
20
0.4mA
0.2 10
10
0.2mA

0 0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) — IC hFE — IC fT — I E
100 120 600
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCE=10V VCB=10V

Ta=25˚C
Forward current transfer ratio hFE

30

Transition frequency fT (MHz)

100 500

10

80 400
3
Ta=75˚C
1 60 300
25˚C

0.3 Ta=75˚C –25˚C

25˚C 40 200

0.1
–25˚C
20 100
0.03

0.01 0 0
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 – 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA)

Cob — VCB Cre — VCE PG — IE

3.0 –2.4 30
Common emitter reverse transfer capacitance Cre (pF)

IE=0 IC=1mA VCB=10V

Collector output capacitance Cob (pF)

f=1MHz f=10.7MHz f=58MHz

Ta=25˚C Ta=25˚C Ta=25˚C
2.5 –2.0 25
Power gain PG (dB)

2.0 –1.6 20

1.5 –1.2 15

1.0 – 0.8 10

0.5 – 0.4 5

0 0 0
1 3 10 30 100 1 3 10 30 100 – 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) Emitter current IE (mA)