Transistor 2sc1360
Transistor 2sc1360
Transistor 2sc1360
2SC1360, 2SC1360A
Silicon NPN epitaxial planer type
5.9±0.2 4.9±0.2
■ Features
8.6±0.2
● High transition frequency fT.
● Large collector power dissipation PC.
0.7±0.1
+0.3
0.7–0.2
■ Absolute Maximum Ratings (Ta=25˚C)
2.54±0.15
Parameter Symbol Ratings Unit
13.5±0.5
Collector to 2SC1360 50
VCBO V
base voltage 2SC1360A 60
Collector to 2SC1360 45
VCEO V
emitter voltage 2SC1360A 60 0.45–0.1
+0.2 +0.2
0.45–0.1
1.27 1.27
Emitter to base voltage VEBO 4 V
1:Emitter
Collector current IC 50 mA 2:Collector
1 2 3
3.2
3:Base
Collector power dissipation PC 1 W
EIAJ:SC–51
Junction temperature Tj 150 ˚C TO–92L Package
1
Transistor 2SC1360, 2SC1360A
PC — Ta IC — VCE IC — VBE
1.2 80 60
25˚C VCE=10V
Collector power dissipation PC (W)
70
1.0 IB=2.0mA 50
1.8mA Ta=75˚C –25˚C
1.2mA
0.6 40 30
1.0mA
30
0.4 0.8mA 20
0.6mA
20
0.4mA
0.2 10
10
0.2mA
0 0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)
VCE(sat) — IC hFE — IC fT — I E
100 120 600
Collector to emitter saturation voltage VCE(sat) (V)
30
10
80 400
3
Ta=75˚C
1 60 300
25˚C
0.1
–25˚C
20 100
0.03
0.01 0 0
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 – 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA)
2.0 –1.6 20
1.5 –1.2 15
1.0 – 0.8 10
0.5 – 0.4 5
0 0 0
1 3 10 30 100 1 3 10 30 100 – 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) Emitter current IE (mA)