Transistor

2SA720A
Silicon PNP epitaxial planer type

For low-frequency driver amplification

Unit: mm
Complementary to 2SC1318A
5.0±0.2 4.0±0.2

■ Features

5.1±0.2
● High collector to emitter voltage VCEO.
● Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.

13.5±0.5
■ Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO –80 V +0.2 +0.2
0.45 –0.1 0.45 –0.1
Collector to emitter voltage VCEO –70 V 1.27 1.27
Emitter to base voltage VEBO –5 V

2.3±0.2
Peak collector current ICP –1 A
1 2 3
1:Emitter
Collector current IC – 0.5 A 2:Collector
Collector power dissipation PC 625 mW 3:Base
2.54±0.15
JEDEC:TO–92
Junction temperature Tj 150 ˚C EIAJ:SC–43A
Storage temperature Tstg –55 ~ +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = –20V, IE = 0 – 0.1 µA
Collector to base voltage VCBO IC = –10µA, IE = 0 –80 V
Collector to emitter voltage VCEO IC = –2mA, IB = 0 –70 V
Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V
hFE1 *1 VCE = –10V, IC = –150mA*2 85 240
Forward current transfer ratio
hFE2 VCE = –10V, IC = –500mA*2 40
Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –30mA*2 – 0.2 – 0.6 V
Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –30mA*2 – 0.85 –1.5 V
Transition frequency fT VCB = –10V, IE = 50mA, f = 100MHz 120 MHz
Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 20 30 pF
*2 Pulse measurement

*1h Rank classification

FE1

Rank Q R
hFE1 85 ~ 170 120 ~ 240

1
Transistor 2SA720A

PC — Ta IC — VCE IC — IB
800 –1.2 –1.2
Ta=25˚C VCE=–10V
Collector power dissipation PC (mW)

700 Ta=25˚C
–1.0 IB=–10mA –1.0
–9mA

Collector current IC (A)

Collector current IC (A)

600
–8mA
– 0.8 –7mA – 0.8
500
–6mA
–5mA
400 – 0.6 – 0.6
–4mA

300 –3mA
– 0.4 – 0.4
–2mA
200

– 0.2 –1mA – 0.2

100

0 0 0
0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 0 –2 –4 –6 –8 –10
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA)

VCE(sat) — IC VBE(sat) — IC hFE — IC

–10 –100 300
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 IC/IB=10
Base to emitter saturation voltage VBE(sat) (V)

VCE=–10V

Forward current transfer ratio hFE

–3 –30
250

–1 –10

200 Ta=75˚C
– 0.3 Ta=75˚C –3
25˚C
25˚C 25˚C
– 0.1 –1 Ta=–25˚C 150
75˚C –25˚C
–25˚C
– 0.03 – 0.3
100

– 0.01 – 0.1

50
– 0.003 – 0.03

– 0.001 – 0.01 0
–1 –3 –10 –30 –100 –300 –1000 –1 –3 –10 –30 –100 –300 –1000 –1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA) Collector current IC (A) Collector current IC (mA)

fT — IE Cob — VCB ICBO — Ta

200 50 104
VCB=–10V VCB=–20V
IE=0
Collector output capacitance Cob (pF)

Ta=25˚C
180 45 f=1MHz
Ta=25˚C
Transition frequency fT (MHz)

160 40
103
140 35
ICBO (Ta=25˚C)

120 30
ICBO (Ta)

100 25 102

80 20

60 15
10
40 10

20 5

0 0 1
1 3 10 30 100 –1 –3 –10 –30 –100 0 60 120 180
Emitter current IE (mA) Collector to base voltage VCB (V) Ambient temperature Ta (˚C)