Silicon NPN Epitaxial Planar Type: Power Transistors
Silicon NPN Epitaxial Planar Type: Power Transistors
Silicon NPN Epitaxial Planar Type: Power Transistors
2SC5840
Silicon NPN epitaxial planar type
Unit: mm
4.6±0.2
Power supply for Audio & Visual equipments 9.9±0.3 2.9±0.2
3.0±0.5
such as TVs and VCRs
Industrial equipments such as DC-DC converters φ 3.2±0.1
15.0±0.5
■ Features
• High-speed switching (tstg: storage time/tf: fall time is short)
4.2±0.2
• Low collector-emitter saturation voltage VCE(sat) 1.4±0.2
2.6±0.1
1.6±0.2
• Superior forward current transfer ratio hFE linearity
13.7±0.2
Solder Dip
• TO-220D built-in: Excellent package with withstand voltage 5 kV 0.8±0.1 0.55±0.15
guaranteed
2.54±0.30
■ Absolute Maximum Ratings TC = 25°C 5.08±0.50
1 2 3 1: Base
Parameter Symbol Rating Unit 2: Collector
3: Emitter
Collector-base voltage (Emitter open) VCBO 80 V
TO-220D-A1 Package
Collector-emitter voltage (Base open) VCEO 80 V
Emitter-base voltage (Collector open) VEBO 5 V Marking Symbol: C5840
Collector current IC 3 A
Internal Connection
Peak collector current ICP 5 A
C
Collector power TC = 25°C PC 15 W
dissipation Ta = 25°C 2 B
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C E
10
IC
20
1
(1) 10 ms
15
t = 1 ms
10
0.1
t=1s
5
(2)
0 0.01
0 20 40 60 80 100 120 140 160 1 10 100 1 000
Rth t
1 000
(1) Without heat sink Ta = 25°C
(2) With a 100 × 100 × 2 mm AL heat sink
Thermal resistance Rth (°C/W)
100 (1)
(2)
10
0.1
0.001 0.01 0.1 1 10 100 1 000
Time t (s)
2 SJD00297AED
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2002 JUL
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