Power Transistors

2SC5840
Silicon NPN epitaxial planar type
Unit: mm
4.6±0.2
Power supply for Audio & Visual equipments 9.9±0.3 2.9±0.2

3.0±0.5
such as TVs and VCRs
Industrial equipments such as DC-DC converters φ 3.2±0.1

15.0±0.5
■ Features
• High-speed switching (tstg: storage time/tf: fall time is short)

4.2±0.2
• Low collector-emitter saturation voltage VCE(sat) 1.4±0.2
2.6±0.1
1.6±0.2
• Superior forward current transfer ratio hFE linearity

13.7±0.2

Solder Dip
• TO-220D built-in: Excellent package with withstand voltage 5 kV 0.8±0.1 0.55±0.15

guaranteed
2.54±0.30
■ Absolute Maximum Ratings TC = 25°C 5.08±0.50

1 2 3 1: Base
Parameter Symbol Rating Unit 2: Collector
3: Emitter
Collector-base voltage (Emitter open) VCBO 80 V
TO-220D-A1 Package
Collector-emitter voltage (Base open) VCEO 80 V
Emitter-base voltage (Collector open) VEBO 5 V Marking Symbol: C5840
Collector current IC 3 A
Internal Connection
Peak collector current ICP 5 A
C
Collector power TC = 25°C PC 15 W
dissipation Ta = 25°C 2 B
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C E

■ Electrical Characteristics TC = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 80 V
Collector-base cutoff current (Emitter open) ICBO VCB = 80 V, IE = 0 100 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 80 V, IB = 0 100 µA
Forward current transfer ratio hFE1 VCE = 4 V, IC = 0.2 A 50 
hFE2 VCE = 4 V, IC = 1 A 80 280
hFE3 VCE = 4 V, IC = 3 A 20
Collector-emitter saturation voltage VCE(sat) IC = 3 A, IB = 0.375 A 0.7 V
Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 10 MHz 100 MHz
Turn-on time ton IC = 1 A, Resistance loaded 0.2 µs
Storage time tstg IB1 = 0.1 A, IB2 = − 0.1 A 0.9 µs
Fall time tf VCC = 50 V 0.15 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: November 2002 SJD00297AED 1

2SC5840

PC  Ta Safe operation area

35 100
(1) TC = Ta Non repetitive pulse
(2) Without heat sink TC = 25˚C
30
Collector power dissipation PC (W)

10

Collector current IC (A)

25 ICP

IC
20
1
(1) 10 ms
15

t = 1 ms
10
0.1
t=1s
5
(2)

0 0.01
0 20 40 60 80 100 120 140 160 1 10 100 1 000

Ambient temperature Ta (°C) Collector-emitter voltage VCE (V)

Rth  t
1 000
(1) Without heat sink Ta = 25°C
(2) With a 100 × 100 × 2 mm AL heat sink
Thermal resistance Rth (°C/W)

100 (1)

(2)

10

0.1
0.001 0.01 0.1 1 10 100 1 000
Time t (s)

2 SJD00297AED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.

2002 JUL
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.