SPP11N65C3,SPA11N65C3

SPI11N65C3

Cool MOS™ Power Transistor V DS 650 V

Feature RDS(on) 0.38 Ω
• New revolutionary high voltage technology
ID 11 A
• Ultra low gate charge
• Periodic avalanche rated PG-TO262 PG-TO220FP PG-TO220

• Extreme dv/dt rated

• High peak current capability
• Improved transconductance

Type Package Ordering Code Marking

SPP11N65C3 PG-TO220 Q67040-S4557 11N65C3
SPA11N65C3 PG-TO220FP SP000216318 11N65C3
SPI11N65C3 PG-TO262 Q67040-S4561 11N65C3

Maximum Ratings
Parameter Symbol Value Unit
SPP_I SPA
Continuous drain current ID A
TC = 25 °C 11 111)
TC = 100 °C 7 71)
Pulsed drain current, tp limited by T jmax ID puls 33 33 A
Avalanche energy, single pulse EAS 340 340 mJ
ID=2.5A, V DD=50V

Avalanche energy, repetitive tAR limited by T jmax 2) EAR 0.6 0.6

ID=4A, VDD=50V

Avalanche current, repetitive tAR limited by T jmax IAR 4 4 A

Gate source voltage VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30
Power dissipation, T C = 25°C Ptot 125 33 W
Operating and storage temperature Tj , Tstg -55...+150 °C

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Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 50 V/ns
V DS = 480 V, ID = 11 A, Tj = 125 °C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 1 K/W
Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.8
Thermal resistance, junction - ambient, leaded RthJA - - 62
Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling area 3) - 35 -
Soldering temperature, wavesoldering T sold - - 260 °C
1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS V GS=0V, I D=0.25mA 650 - - V
Drain-Source avalanche V(BR)DS V GS=0V, I D=4A - 730 -
breakdown voltage
Gate threshold voltage VGS(th) ID=500µA, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current IDSS V DS=600V, V GS=0V, µA
Tj=25°C - 0.1 1
Tj=150°C - - 100
Gate-source leakage current IGSS V GS=20V, V DS=0V - - 100 nA
Drain-source on-state resistance RDS(on) V GS=10V, I D=7A Ω
Tj=25°C - 0.34 0.38
Tj=150°C - 0.92 -
Gate input resistance RG f=1MHz, open drain - 0.86 -

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Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance g fs V DS≥2*I D*RDS(on)max, - 8.3 - S
ID=7A

Input capacitance Ciss V GS=0V, VDS=25V, - 1200 - pF

Output capacitance Coss f=1MHz - 390 -
Reverse transfer capacitance Crss - 30 -
Effective output capacitance,4) Co(er) V GS=0V, - 45 -
energy related V DS=0V to 480V

Effective output capacitance,5) Co(tr) - 85 -

time related
Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 10 - ns
Rise time tr ID=11A, - 5 -
Turn-off delay time td(off) RG=6.8Ω - 44 70
Fall time tf - 5 9

Gate Charge Characteristics

Gate to source charge Qgs VDD =480V, ID =11A - 5.5 - nC
Gate to drain charge Qgd - 22 -
Gate charge total Qg VDD =480V, ID =11A, - 45 60
VGS =0 to 10V

Gate plateau voltage V(plateau) VDD =480V, ID =11A - 5.5 - V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as P
AV=EA R*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V
o(er) oss DS DSS.
5C
o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% VDSS.

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Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC =25°C - - 11 A
forward current
Inverse diode direct current, ISM - - 33
pulsed
Inverse diode forward voltage VSD VGS =0V, IF =IS - 1 1.2 V
Reverse recovery time trr VR =480V, IF =IS , - 400 600 ns
Reverse recovery charge Qrr diF /dt=100A/µs - 6 - µC
Peak reverse recovery current Irrm - 41 - A
Peak rate of fall of reverse dirr /dt Tj =25°C - 1200 - A/µs
recovery current

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
SPP_I SPA SPP_I SPA
Rth1 0.015 0.15 K/W Cth1 0.0001878 0.0001878 Ws/K
Rth2 0.03 0.03 Cth2 0.0007106 0.0007106
Rth3 0.056 0.056 Cth3 0.000988 0.000988
Rth4 0.197 0.194 Cth4 0.002791 0.002791
Rth5 0.216 0.413 Cth5 0.007285 0.007401
Rth6 0.083 2.522 Cth6 0.063 0.412

Tj External Heatsink
R th1 R th,n T case
P tot (t)

C th1 C th2 C th,n

T amb

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1 Power dissipation 2 Power dissipation FullPAK

Ptot = f (TC) Ptot = f (TC)

SPP11N65C3
140 35
W
W
120

110

100 25

P tot
P tot

90

80 20

70

60 15

50

40 10

30

20 5

10

0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

3 Safe operating area 4 Safe operating area FullPAK

ID = f ( VDS ) ID = f (VDS)
parameter : D = 0 , TC=25°C parameter: D = 0, TC = 25°C
2 2
10 10

A A

10 1 10 1
ID

ID

0 0
10 10

tp = 0.0008 ms
tp = 0.0008 ms
tp = 0.01 ms
tp = 0.01 ms
10 -1
10 -1 tp = 0.1 ms
tp = 0.1 ms
tp = 1 ms
tp = 1 ms
DC tp = 10 ms
DC

10 -2 10 -2
0 1 2 3 0 1 2 3
10 10 10 V 10 10 10 10 V 10
V DS VDS

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5 Transient thermal impedance FullPAK 6 Typ. output characteristic

ZthJC = f (tp) ID = f (VDS); Tj=25°C
parameter: D = t p/t parameter: tp = 10 µs, VGS
1
10 40
K/W 20V
A
10V
8V
0
10 32 7V

28
Z thJC

6,5V

ID
-1
10 24
D = 0.5
D = 0.2 20
D = 0.1 6V
-2
10 D = 0.05 16
D = 0.02
D = 0.01
12 5,5V
single pulse
10 -3
8
5V

4 4,5V

10 -4
-7 -6 -5 -4 -3 -2 -1 1 0
10 10 10 10 10 10 10 s 10 0 3 6 9 12 15 18 21 V 27
tp VDS

7 Typ. output characteristic 8 Typ. drain-source on resistance

ID = f (VDS); Tj=150°C RDS(on)=f(ID)
parameter: tp = 10 µs, VGS parameter: Tj=150°C, VGS
22 2
A 20V
8V Ω
7V
18 7.5V 4V 4.5V 5V 5.5V 6V
6V
1.6
R DS(on)

16
ID

14 1.4
5.5V
12
1.2
10
5V 1
8

6
4.5V 0.8
4 6.5V
4V 0.6 8V
2 20V

0 0.4
0 5 10 15 V 25 0 2 4 6 8 10 12 14 16 A 20
V DS ID

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9 Drain-source on-state resistance 10 Typ. transfer characteristics

RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 7 A, V GS = 10 V parameter: tp = 10 µs
SPP11N65C3
2.1 40
Ω
A
25°C
1.8
32
1.6
R DS(on)

28
1.4

ID
24 150°C
1.2

20
1

16
0.8

0.6 12
98%
0.4 8
typ

0.2 4

0 0
-60 -20 20 60 100 °C 180 0 2 4 6 8 10 12 V 15
Tj VGS

11 Typ. gate charge 12 Forward characteristics of body diode

VGS = f (QGate) IF = f (V SD)
parameter: ID = 11 A pulsed parameter: Tj , tp = 10 µs
SPP11N65C3 10 2 SPP11N65C3
16

V
A

12
10 1
VGS

0,2 VDS max

10
IF

0,8 VDS max

6
10 0

T j = 25 °C typ
4
T j = 150 °C typ
T j = 25 °C (98%)
2
T j = 150 °C (98%)

10 -1
0
0 10 20 30 40 50 nC 70 0 0.4 0.8 1.2 1.6 2 2.4 V 3
QGate VSD

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13 Typ. switching time 14 Typ. switching time

t = f (ID), inductive load, T j=125°C t = f (RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, R G=6.8Ω par.: VDS=380V, VGS=0/+13V, I D=11 A
70 350
ns
ns
60

55 td(off)

50 250

45
t

t
40 200

35 td(off)
td(on)
30 150 tr
25 tf

20 tf 100

15 td(on)
10 50

5 tr

0 0
0 2 4 6 8 A 12 0 10 20 30 40 50 Ω 70
ID RG

15 Typ. drain current slope 16 Typ. drain source voltage slope

di/dt = f(RG), inductive load, Tj = 125°C dv/dt = f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, I D=11A par.: VDS=380V, VGS=0/+13V, I D=11A
3000 140
V/ns

A/µs dv/dt(off)
120

110

100
dv/dt

2000
di/dt

90

80
1500
70

60
1000
50
di/dt(off)
40 dv/dt(on)
500 30
di/dt(on)

20

0 10
0 20 40 60 80 Ω 120 0 10 20 30 40 50 Ω 70
RG RG

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17 Typ. switching losses 18 Typ. switching losses

E = f (I D), inductive load, Tj=125°C E = f(R G), inductive load, T j=125°C
par.: VDS=380V, VGS=0/+13V, R G=6.8Ω par.: VDS=380V, VGS=0/+13V,I D=11A
0.04 0.24
*) Eon includes SPD06S60 diode *) Eon includes SPD06S60 diode
commutation losses commutation losses
mWs
mWs

0.03

0.16 Eoff
0.025
E

E
0.02 0.12

0.015
0.08
Eon*
0.01 Eon*

0.04
0.005
Eoff

0 0
0 2 4 6 8 A 12 0 10 20 30 40 50 Ω 70
ID RG

19 Avalanche SOA 20 Avalanche energy

IAR = f (tAR) EAS = f (T j)
par.: T j ≤ 150 °C par.: ID = 2.5 A, V DD = 50 V
4 350

A mJ

3 Tj(Start)=25°C
250
E AS
I AR

2.5
200

2
Tj(Start)=125°C 150
1.5

100
1

0.5 50

0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 µs 10 20 40 60 80 100 120 °C 160
t AR Tj

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21 Drain-source breakdown voltage 22 Avalanche power losses

V(BR)DSS = f (Tj) PAR = f (f )
parameter: EAR=0.6mJ
785 300
V
W
745
V(BR)DSS

725

P AR
200
705

685 150

665
100
645

625
50

605

585 0 4 5 6
-60 -20 20 60 100 °C 180 10 10 Hz 10
Tj f

23 Typ. capacitances 24 Typ. Coss stored energy

C = f (V DS) Eoss=f(V DS)
parameter: VGS=0V, f=1 MHz
4
10
7.5
µJ
pF
Ciss
6
10 3
5.5
E oss

5
C

4.5

10 2 4
Coss
3.5
3
2.5
1 2
10 Crss
1.5
1
0.5
10 0
0
0 100 200 300 400 V 600 0 100 200 300 400 V 600
V DS VDS

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Definition of diodes switching characteristics

Rev. 2.91 Page 11 2009-11-30

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PG-TO220-3-1, PG-TO220-3-21

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PG-TO220-3-31/3-111 Fully isolated package ( 2500 VAC; 1 minute )

Rev. 2.91 Page 13 2009-11-30

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PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)

Rev. 2.91 Page 14 2009-11-30

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Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.

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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

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For further information on technology, delivery terms and conditions and prices, please
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Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
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Rev. 2.91 Page 15 2009-11-30