Introduction to Semiconductor Physics and Physical Electronics and Circuit

Models of Transistors
R. B. Adler, A. C. Smith, R. L. Longini, Paul E. Gray, David DeWitt, A. R. Boothroyd, and James F.
GibbonsH. J. Hagger,

Citation: Physics Today 20, 2, 78 (1967); doi: 10.1063/1.3034168

View online: http://dx.doi.org/10.1063/1.3034168
View Table of Contents: http://physicstoday.scitation.org/toc/pto/20/2
Published by the American Institute of Physics
 tions, solubility, thermodynamic prop- short appendix includes a convenient
erties, radioactive, magnetic and conversion table for Gaussian and
electrical properties of rocks and min- rationalized mks units, demagnetiza-
erals, and atomic constants (1961). tion factors, and outer electronic con-
figurations for the elements.
Homology The eight sponsoring industrial con-
cerns and the Geological Society are to
be commended for this useful and
and attractively printed handbook. Semiconductor electronics series

Feynman Robert L. Weber is associate professor

of physics at The Pennsylvania State Uni-
versity.
INTRODUCTION TO SEMICON-
DUCTOR PHYSICS. By R. B. Adler,
A. C. Smith, R. L. Longini. 247 pp.

Integrals Wiley, New York, 1964. Cloth $4.50,

paper $2.65
PHYSICAL ELECTRONICS AND CIR-
CUIT MODELS OF TRANSISTORS.
Rudolph C. Hwa From first principles By Paul E. Gray, David DeWitt, A. R.
Boothroyd, James F. Gibbons. 262
State University of New York at
pp. Wiley, New York, 1964. Cloth
Stony Brook and THE PHYSICAL PRINCIPLES OF $4.50, paper $2.65
Vigdor L Teplitz MAGNETISM. By Allan H. Morrish.
680 pp. Wiley, New York, 1965. by H. J. Ragger
Massachusetts Institute of $16.50
Technology. In 1960 the Semiconductor Electron-
by Robert L. Weber ics Education Committee (SEEC)
232 Pages. $12.50/$10.00 Prepaid undertook the preparation of a course
A scientist or engineer who desires an
integrated knowledge of magnetism in semiconductor electronics for use in
This monograph and collec- will be grateful for Morrish's exten- universities at the third- or fourth-year
tion of reprints treats the ap- sive, modern treatment that starts undergraduate level. Seven books on
plication of homology theory from first principles. The author, now semiconductor electronics are planned
to the analytic structures of at the University of Manitoba, states and shall—before publication—be pro-
Feynman and unitarity inte- that the text evolved from solid-state duced in one or more preliminary edi-
grals. Study of the analyticity courses offered at the University of tions for teaching trials at colleges or
of Feynman integrals by in industrial training courses. The
classical methods is summa- Minnesota and from a three-quarter
rized, and homology theory is graduate course in magnetism. First volumes 1 and 2 of this series of 7
described. courses in solid-state physics and books have been published to date.
quantum physics are assumed as pre- The first volume, Introduction to
CONTENTS: Singularities. Landau requisites. Semiconductor Physics, is a very gen-
Surface. Pinch in Momentum Space. Magnetic phenomena are intro- eral treatment of the fundamentals
Discontinuity and Unitarity Integrals.
Nodes and Cusps. Non-Landau duced from an experimental point of and shows little reference to specific
Singularities. Abelian Integrals and view and interpreted in quantum-me- semiconductor devices. The content
Topology. Homology. Simplicial Com- of the book is divided into four main
plexes. Chains, Cycles, and Boun- chanical theories. More than half the
daries. The Homology Group. The book is devoted to strongly coupled parts. The first chapter deals with
Relative Homology Group. Chain- dipole systems, where molecular field the valence-bond model of a semicon-
Mapping and Induced Homomor-
phism. Exact Sequences. The Exact theory is stressed. The author's asso- ductor. It discusses the intrinsic
Homology Sequence. Integrals. ciation with the Magnetic Materials conduction of semiconductors, the role
Compact and Closed Homologies. Digest is reflected in his extensive ref- of impurities and the conduction proc-
The Coboundary Homomorphism.
The Vanishing Class. The Kronecker erences to the literature. One is ess and finishes with the description of
Index. The Picard-Lefschetz Theo- struck by the number of new names minority-carrier injection and recombi-
rem. Example: A Unitarity Integral.
Example: An Effective Intersection. cited in the work of the last two dec- nation. Chapter 2 is a parallel and
Discontinuities. Differential Forms. ades. comparative treatment of the subject
The Residue Formula. The Discon- Diamagnetism, paramagnetism, fer- dealt with in chapter 1 by explaining
tinuity Formula. More Mathematics.
Homotopy. Manifolds and Varieties. romagnetism, ferrimagnetism and anti- the energy-band model approach. For
Cohomology. Fiber Bundle. Spectral ferromagnetism are covered in a way these two chapters the authors are
Sequences. Categories and Func- to be congratulated for they describe
tors. Sheaves. Some Results. The that unifies material from physics,
Ambient Isotopy Theorem. Compac- chemistry, metallurgy and engineer- complicated relations in semiconduc-
tification. The Decomposition Theo- ing. Work on alloys and supercon- tor materials with clarity and in a well
rem. Concluding Remarks. Refer-
ences. Reprints. Index. ductivity is not emphasized. Such balanced manner. Chapter 3 deals
topics as magnetohydrodynamics, with the equilibrium distribution of
*20% off on prepaid orders. group-theoretical analysis and the electrons in the bands discussing
magnetoelectric effect are omitted. quantum statistics and transition
Problem sets and bibliographies ap- probabilities related to semiconduc-
W. A. BENJAMIN, INC. pear at the end of the chapter. A tors. The last chapter describes none-
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78 • FEBRUARY 1967 • PHYSICS TODAY

quilibrium transport of charge carriers. cussed. Again we find some problems
To each chapter the authors have to each chapter for a better under-
added some questions and problems standing of the material covered in
on the material covered to provide each section. Both volumes show ma-
practice on extending and clarifying terial extremely well presented, cover- "The book is distinguished by care and
the understanding of the material con- ing semiconductor physics in the first explicitness, and within the limitations
tained in the chapter. An appendix of and diodes and transistors in the sec- of the approach is definitive."
about 20% of the total content is re- ond volume. It is obvious that the —Mathematical Reviews
served to laboratory experiments that authors have not only a profound
can be carried out during the course. knowledge of the field but also have
The authors of this first volume in a
series have succeeded in writing a
gained from the preliminary editions
combined with the experience of
Introduction
very complete discussion of the basics
of semiconductor physics.
teaching the subject. It may be
hoped that the remaining volumes of
to Dispersion
The second volume Physical Elec-
tronics and Circuit Models of Transis-
this series may hold the standard and
level of the first two books. The
books can be highly recommended as
Techniques in
tors is a logical continuation of the ma-
terial contained in the first volume.
The authors assume that the reader is
texts for undergraduate courses, for
they show clarity, balance in present-
Field Theory
familiar with elementary electronic ing the matter and compactness in the
subject covered. Gabriel Barton,
circuits and is able to understand the
mechanisms of electrical conduction in
University of Sussex.
semiconductors. The latter can be as- 242 Pages. $5.95 Paper;
H. ]. Hagger, a specialist in electronics, is
sumed of the reader who has gone associated with Albiswerk/Ziirich, in $10.00 Cloth. Prepaid Price:
through volume 1 of this series. This Switzerland.
second volume deals with the physical
$4.76 Paper; $8.00 Cloth.*
operation and the dc behavior of p-n
junctions in chapters 1 through 3. In Surfaces in depth This collection of lecture
chapter 4 effects are described that notes is directed to the grad-
show significant differences to the ide- SEMICONDUCTOR SURFACES. BY uate student concerned with
A. Manny, Y. Goldstein, N. B. Gro- dynamical calculations on the
alized p-n junction behavior (voltage ver. 496 pp. Interscience, New York,
drops, recombination, leakage across 1965. $17.50 weak and electromagnetic
the surface of the junction and inter-
by H. J. Hagger
couplings of strongly inter-
nal breakdown). In chapter 5 the acting particles.
dynamic behavior of p-n junction Surface effects in semiconductors play
diodes is dealt with. In the next a prominent role in semiconductor CONTENTS: Introduction and
chapter lumped-constant models (due research. During the past 15 years a Postscript. The Field Hypothe-
to Linvill-Gibbons) for junction vast number of publications reflect the sis in Particle Physics. Con-
diodes are discussed. The second half intensive effort devoted to the study of traction Scheme and Crossing
of the book (chapter 7 through 10) semiconductor surfaces. The authors Symmetry. Kinematics, Cross-
deals with transistors, starting with the attempted to provide organized basic ing Symmetry, and Cross Sec-
structure and operation of transistors. information both for the physicist and
tions. Charge and Spin. The
In chapter 8 small-signal models for the chemist active in the field. The
extensive references to the literature Two-Point Functions. The
transistors are discussed and here even
more complicated circuit models cover the period up to the end of Form Factor. Subtractions,
including space-charge capacitance are 1964. Conserved Currents, and
described. In the next chapter the After some historical notes on sur- Asymptotic Behavior. The
large-signal behavior is dealt with by face effects the authors consider the Omnes Equation. Approxima-
using the Ebers-Moll model for slow- semiconductor bulk, giving a very tions to Partial Waves and to
speed conditions—that is, in the low- good introduction into the principles Omnes Functions. The Sec-
frequency region. The tenth chapter of semiconductor physics (band model, ond Riemann Sheet. Anoma-
then is devoted to transistor models for occupation statistics, carrier transport lous Thresholds. The Electro-
dynamic switching with the aspect of and nonequilibrium phenomena). In magnetic Structure of Nucle-
providing a sufficiently accurate model chapter 3 the lattice structure and ons. Axial Vector Current and
which, however, is simplified in order chemical reactivity of the surface is Goldberger-Treiman Formula.
to obtain a compromise between com- treated. The authors start with dis- Appendixes. References. In-
pleteness and simplicity. cussions on studies of clean surfaces,
dex.
In two appendices p-n junction their preparation and measurement,
space-charge layers are more closely the structure of real surfaces; the
chemical processes are then treated. *20% OFF ON PREPAID ORDERS.
looked at and the electric field in the
neutral regions of a p-n junction is dis- In chapter 4 the surface space-charge
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PHYSICS TODAY • FEBRUARY 1967 • 79