Institute of Aeronautical Engineering
Institute of Aeronautical Engineering
Institute of Aeronautical Engineering
APPLIED PHYSICS
MODULE - I
1. (a) Using Planck’s and Einstein’s theory of radiation, Show that the wavelength [7M]
associated with an electron of mass ‘m’ and kinetic energy ‘E’ is given by
h
.
2mE
(b) Determine the de Broglie wavelength associated with a proton moving with a
velocity of 1/10 of velocity of light. (Mass of proton = 1.674 x 10 -27 kg). [7M]
2. (a) Describe Davisson and Germer‘s experiment with a neat diagram and explain [7M]
how it established the proof for wave nature of electrons.
(b) Calculate the energies that can be possessed by a particle of mass 8.50 x10 -31kg [7M]
which is placed in an infinite potential box of width 10-9m.
MODULE - II
3. (a) Using Kronig-Penny model, show that the energy spectrum of an electron [7M]
contains a number of allowed energy bands separated by forbidden bands.
(b) Determine carrier concentration of an intrinsic semiconductor of band gap 0.7eV [7M]
at 300K. [Given that the effective mass of electron = effective mass of hole = rest
mass of electron].
4. (a) Obtain mathematical expression for intrinsic carrier concentration and hence [7M]
prove that the Fermi level lies at the middle for an intrinsic semiconductor.
(b) In a Hall experiment, a current of 25 A is passed through a long foil of silver [7M]
which is 0.1 mm thick and 3 cm wide. If the magnetic field of flux density 0.14
Wb/m3 is applied perpendicular to the foil, calculate the Hall voltage developed
and estimate the mobility of electrons in silver. The conductivity of silver is 6.8 x
107 Ω-1m-1 and the Hall coefficient is -8.4 x 10-11 m3/coulomb.
MODULE - III
5. (a) Draw the graphic symbol of crystal diode and explain its significance. How will [7M]
you determine the V-I characteristics of a p-n diode
(b) Obtain the reverse saturation current of a diode if the current at 0.2V forward bias [7M]
is 0.1mA at a temperature of 25°C and the ideality factor is 1.5.
6. (a) Write a note on Avalanche photo diode. Review the parameters that are [7M]
commonly used to assess the performance of a detector.
(b) Find the temperature at which a diode current is 2 mA for a diode which has [7M]
reverse saturation current of 10 -9 A. The ideality factor is 1.4 and the applied
voltage is 0.6V forward bias.
MODULE - IV
7. (a) On application of external electric field, various polarization processes takes [7M]
place in dielectric material. Explain briefly all these polarization processes.
(b) A parallel capacitor has an area of 100 cm 2, a plate separation of 1 cm and is [7M]
charged to a potential of 100 Volts. Calculate the capacitance of the capacitor and
the change on the plates.
8. (a) Describe the origin of magnetic moment and find the magnetic dipole moments [7M]
due to orbital and spin motions of an electron.
(b) A paramagnetic material has a magnetic field intensity of 10 4 A/m. If the [7M]
susceptibility of the material at room temperature is 3.7 x 10 -3, calculate the
magnetization and magnetic flux density in the material.
MODULE - V
9. (a) What do you mean by population inversion? Explain it using three energy level [7M]
diagram. Also discuss why population inversion is essential for laser action.
(b) Find the relative population of the two states in a ruby laser that produces a light [7M]
beam of wavelength 6943 Ao at 300 K.
10 (a) Draw the block diagram of fiber optic communication system and explain the [7M]
functions of each block in the system.
(b) An optical fiber has a numerical aperture of 0.02 and a cladding refractive index [7M]
of 1.59. Solve the value of acceptance angle for the fiber in water which has a
refractive index of 1.33.
MAPPING OF COURSE OUTCOMES WITH
SEMESTER END EXAMINATION (SEE) MODEL QUESTION PAPER
COURSE OBJECTIVES:
The course should enable the students to learn:
I Basic formulations in wave mechanics for the evolution of energy levels and quantization of energies for a
particle in a potential box with the help of mathematical description.
II Fundamental properties of semiconductors including the band gap, charge carrier concentration, doping and
transport mechanisms.
III The metrics of optoelectronic components, lasers, optical fiber communication and be able to incorporate
them into systems for optimal performance.
IV The appropriate magnetic and dielectric materials required for various engineering applications.
COURSE OUTCOMES:
After successful completion of the course, Students will be able to:
14
12
10
Count
8
6
4
2
0
Remember Understand Apply Analyze Evaluate Create