Stp10Nk70Zfp Stp10Nk70Z: N-Channel 700V - 0.75 - 8.6A - To220-To220Fp Zener-Protected Supermesh™ Mosfet
Stp10Nk70Zfp Stp10Nk70Z: N-Channel 700V - 0.75 - 8.6A - To220-To220Fp Zener-Protected Supermesh™ Mosfet
Stp10Nk70Zfp Stp10Nk70Z: N-Channel 700V - 0.75 - 8.6A - To220-To220Fp Zener-Protected Supermesh™ Mosfet
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STP10NK70ZFP
STP10NK70Z
N-CHANNEL 700V - 0.75Ω - 8.6A - TO220-TO220FP
Zener-Protected SuperMESH™ MOSFET
Applications
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTOR AND PFC
Order codes
Rev 2
August 2005 1/13
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1 Electrical ratings STP10NK70Z - STP10NK70ZFP
1 Electrical ratings
TO-220 TO-220FP
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STP10NK70Z - STP10NK70ZFP 2 Electrical characteristics
2 Electrical characteristics
Drain-Source Breakdown
V(BR)DSS ID = 1mA, V GS= 0 700 V
Voltage
Static Drain-Source On
RDS(on) VGS= 10 V, ID= 4.5 A 0.75 0.85 Ω
Resistance
Table 5. Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Coss eq.
Equivalent Ouput Capacitance VGS=0, VDS =0V to 560V 98 pF
Note 5
Qg Total Gate Charge VDD=560V, ID = 9 A 64 90 nC
Qgs Gate-Source Charge VGS =10V 12 nC
Qgd Gate-Drain Charge (see Figure 17) 33 nC
VDD=350 V, ID=4.5 A,
td(on) Turn-on Delay Time 22 ns
RG=4.7Ω, VGS=10V
tr Rise Time 19 ns
(see Figure 18)
VDD=350 V, ID=4.5A,
td(off) Turn-off Delay Time 46 ns
RG=4.7Ω, VGS=10V
tf Fall Time 19 ns
(see Figure 18)
tr(Voff) Off-voltage Rise Time VDD=560 V, ID=9A, 11 ns
tf Fall Time RG=4.7Ω, VGS=10V 10 ns
tc Cross-over Time (see Figure 18) 22 ns
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2 Electrical characteristics STP10NK70Z - STP10NK70ZFP
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STP10NK70Z - STP10NK70ZFP 2 Electrical characteristics
Figure 3. Safe Operating Area for TO-220FP Figure 4. Thermal Impedance for TO-220FP
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2 Electrical characteristics STP10NK70Z - STP10NK70ZFP
Figure 10. Normalized Gate Threshold Voltage Figure 12. Normalized on Resistance vs
vs Temperatute Temperature
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STP10NK70Z - STP10NK70ZFP 2 Electrical characteristics
Figure 13. Source-drain Diode Forward Figure 14. Normalized BVDSS vs Temperature
Characteristics
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3 Test circuits STP10NK70Z - STP10NK70ZFP
3 Test circuits
Figure 16. Switching Times Test Circuit For Figure 17. Gate Charge Test Circuit
Resistive Load
Figure 18. Test Circuit For Indictive Load Figure 20. Unclamped Inductive Load Test
Switching and Diode Recovery Circuit
Times
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STP10NK70Z - STP10NK70ZFP 4 Package mechanical data
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4 Package mechanical data STP10NK70Z - STP10NK70ZFP
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
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STP10NK70Z - STP10NK70ZFP 4 Package mechanical data
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
E
A
D
B
L3
L6
L7
F1
G1
G
H
F2
1 2 3
L5
L2 L4
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5 Revision History STP10NK70Z - STP10NK70ZFP
5 Revision History
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STP10NK70Z - STP10NK70ZFP 5 Revision History
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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