STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1

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STP3NK80Z - STF3NK80Z
STD3NK80Z - STD3NK80Z-1
N-channel 800V - 3.8Ω - 2.5A - TO-220/TO-220FP/DPAK/IPAK
Zener-protected SuperMESH™ Power MOSFET

General features
VDSS
Type RDS(on) ID
(@Tjmax)
3
STP3NK80Z 800 V < 4.5 Ω 2.5 A 1
2

STF3NK80Z 800 V < 4.5 Ω 2.5 A TO-220 TO-220FP


STD3NK80Z 800 V < 4.5 Ω 2.5 A
STD3NK80Z-1 800 V < 4.5 Ω 2.5 A

■ Extremely high dv/dt capability 3 3


2
1 1
■ 100% avalanche tested
DPAK IPAK
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Internal schematic diagram
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.

Applications
■ Switching application

Order codes
Part number Marking Package Packaging
STP3NK80Z P3NK80Z TO-220 Tube
STF3NK80Z F3NK80Z TO-220FP Tube
STD3NK80ZT4 D3NK80Z DPAK Tape & reel
STD3NK80Z-1 D3NK80Z IPAK Tube

August 2006 Rev 4 1/18


www.st.com 18
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Contents STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................ 7

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

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STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings


Symbol Parameter Value Unit

TO-220 / DPAK
TO-220FP
IPAK
VDS Drain-source voltage (VGS = 0) 800 V
VDGR Drain-gate voltage (RGS = 20KΩ) 800 V
VGS Gate-source voltage ± 30 V

ID Drain current (continuous) at TC = 25°C 2.5 2.5 (1) A

ID Drain current (continuous) at TC=100°C 1.57 1.57 (1) A

IDM(2) Drain current (pulsed) 10 10 (1) A

PTOT Total dissipation at TC = 25°C 70 25 W


Derating factor 0.56 0.2 W/°C
Gate source ESD
VESD(G-S) 2 V
(HBM-C=100pF, R=1.5ΚΩ)
dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns
VISO Insulation withstand voltage (DC) - 2500 V
TJ Operating junction temperature
-55 to 150 °C
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤2.5A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

Table 2. Thermal data


Symbol Parameter Value Unit

DPAK
TO-220 TO-220FP
IPAK

Rthj-case Thermal resistance junction-case max 1.78 5 1.78 °C/W


Thermal resistance junction-ambient
Rthj-a 62.5 100 °C/W
max
Maximum lead temperature for
Tl 300 °C
soldering purpose

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Electrical ratings STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1

Table 3. Avalanche characteristics


Symbol Parameter Value Unit

Avalanche current, repetitive or not-repetitive


IAR 2.5 A
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS 170 mJ
(starting Tj=25°C, Id=Iar, Vdd=50V)

Table 4. Gate-source zener diode


Symbol Parameter Test conditions Min. Typ. Max. Unit

BVGSO Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V

1.1 Protection features of gate-to-source zener diodes


The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.

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STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Electrical characteristics

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5. On/off states


Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 1mA, VGS= 0 800 V
voltage
VDS = Max rating,
Zero gate voltage drain 1 µA
IDSS VDS = Max rating,
current (VGS = 0) 50 µA
Tc = 125°C
Gate body leakage current
IGSS VGS = ± 20V ±10 µA
(VGS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 50µA 3 3.75 4.5 V
Static drain-source on
RDS(on) VGS = 10V, ID = 1.25 A 3.8 4.5 Ω
resistance

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS =15V, ID = 1.25A 2.1 S


Input capacitance
Ciss 485 pF
Output capacitance
Coss VDS =25V, f=1 MHz, VGS=0 57 pF
Reverse transfer
Crss 11 pF
capacitance
Equivalent output
Cosseq(2). VGS=0, VDS =0V to 640V 22 pF
capacitance
td(on) Turn-on delay time 17 ns
VDD=400 V, ID= 1.25 A,
tr Rise time 27 ns
RG=4.7Ω, VGS=10V
td(off) Off-voltage rise time 36 ns
(see Figure 18)
tf Fall time 40 ns
Qg Total gate charge 19 nC
VDD=640V, ID = 2.5 A
Qgs Gate-source charge 3.2 nC
VGS =10V
Qgd Gate-drain charge 10.8 nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS

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Electrical characteristics STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1

Table 7. Source drain diode


Symbol Parameter Test conditions Min Typ. Max Unit

ISD Source-drain current 2.5 A


(1)
ISDM Source-drain current (pulsed) 10 A
VSD (2) Forward on voltage ISD= 2.5 A, VGS=0 1.6 V
ISD= 2.5A,
trr Reverse recovery time 384 ns
di/dt = 100A/µs,
Qrr Reverse recovery charge 1600 µC
VDD=50V, Tj=25°C
IRRM Reverse recovery current 8.4 A
(see Figure 20)
ISD= 2.5 A,
trr Reverse recovery time 474 ns
di/dt = 100A/µs,
Qrr Reverse recovery charge 2100 µC
VDD=50V, Tj=150°C
IRRM Reverse recovery current 8.8 A
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%

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STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Electrical characteristics

2.1 Electrical characteristics (curves)


Figure 1. Safe operating area for TO- Figure 2. Thermal impedance for TO-
220/DPAK/IPAK 220/DPAK/IPAK

Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
(HV19050)

Figure 5. Output characterisics Figure 6. Transfer characteristics

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Electrical characteristics STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1

Figure 7. Transconductance Figure 8. Static drain-source on resistance

Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations

Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs
vs temperature temperature

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STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Electrical characteristics

Figure 13. Source-drain diode forward Figure 14. Normalized BVDSS vs temperature
characteristics

Figure 15. Maximum avalanche


energy vs temperature

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Test circuit STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1

3 Test circuit

Figure 16. Unclamped Inductive load test Figure 17. Unclamped Inductive waveform
circuit

Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit
resistive load

Figure 20. Test circuit for inductive load


switching and diode recovery times

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STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®


packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

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Package mechanical data STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1

TO-220 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

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STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Package mechanical data

TO-220FP MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3
L6
L7
F1

G1

G
H

F2

1 2 3
L5
L2 L4

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Package mechanical data STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1

DPAK MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
b4 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
D1 5.1 0.200
E 6.4 6.6 0.252 0.260
E1 4.7 0.185
e 2.28 0.090
e1 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L 1 0.039
(L1) 2.8 0.110
L2 0.8 0.031
L4 0.6 1 0.023 0.039
R 0.2 0.008
V2 0° 8° 0° 8°

0068772-F

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STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Package mechanical data

TO-251 (IPAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H
C
A

A3
C2

A1

L2 D L
B3

B6

B5
B
3
=

=
B2

G
E

2
=

=
1

L1
0068771-E

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Packing mechanical data STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1

5 Packing mechanical data

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA


mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881

BASE QTY BULK QTY


TAPE MECHANICAL DATA
2500 2500
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641

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STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Revision history

6 Revision history

Table 8. Revision history


Date Revision Changes

09-Sep-2004 3 Complete document


10-Aug-2006 4 New template, no content change

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STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1

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