IRF3205 Series: N-Channel Power MOSFET (110A, 55volts) Description
IRF3205 Series: N-Channel Power MOSFET (110A, 55volts) Description
IRF3205 Series: N-Channel Power MOSFET (110A, 55volts) Description
RoHS
Nell High Power Products
N-Channel Power MOSFET
(110A, 55Volts)
DESCRIPTION
The Nell IRF3205 is a three-terminal silicon
device with current conduction capability
D D
of 110A, fast switching speed, low on-state
resistance, breakdown voltage rating of 55V,
and max. threshold voltage of 4 volts.
They are designed as an extremely efficient
G
and reliable device for use in a wide variety of D
applications. These transistors can be operated G S
directly from integrated circuits. D
S
FEATURES TO-220AB TO-263(D2PAK)
RDS(ON) = 0.010Ω @ VGS = 10V (IRF3205A) (IRF3205H)
Ultra low gate charge(150nC max.)
Low reverse transfer capacitance
(C RSS = 210pF typical)
Fast switching capability
100% avalanche energy specified
D (Drain)
Improved dv/dt capability
175°C operation temperature
PRODUCT SUMMARY
ID (A) 110
G
ID (A), Package Limited 75 (Gate)
VDSS (V) 55
RDS(ON) (Ω) 0.010 @ V GS = 10V
S (Source)
QG(nC) max. 150
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SEMICONDUCTOR IRF3205 Series RoHS
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THERMAL RESISTANCE
SYMBOL PARAMETER Min. Typ. Max. UNIT
Rth(j-c) Thermal resistance, junction to case 0.75
Rth(c-s) Thermal resistance, case to heatsink 0.50 ºC/W
Rth(j-a) Thermal resistance, junction to ambient 62
▲V (BR)DSS/▲T J Breakdown voltage temperature coefficient I D = 1mA, referenced to 25°C 0.057 V/ºC
tf Fall time 65
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT
VSD Diode forward voltage I SD = 62A, V GS = 0V 1.3 V
I s (Is D ) Continuous source to drain current Integral reverse P-N junction 110
diode in the MOSFET
D (Drain)
t ON Forward turn-on time Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
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SEMICONDUCTOR IRF3205 Series RoHS
RoHS
Nell High Power Products
IRF 3205 A
MOSFET series
N-Channel, IR series
Package type
A = TO-220AB
H = TO-263 (D2PAK)
10 3 V GS
10 3 V GS
Top: 15V Top: 15V
Drain-to-Source Current,l D (A)
10V 10V
8V 8V
7V 7V
6V 6V
5.5V 5.5V
5V 5V
10 2 Bottorm: 4.5V 10 2 Bottorm: 4.5V
4.5V
10 1 10 1
4.5V
10 3 2.5
Drain-to-Source on-resistance, R DS(on)
Drain-to-Source Current,l D (A)
l D =107A
T J = 25°C
2.0
T J = 175°C
10 2
(Normalized)
1.5
1.0
10 1
0.5
V DS =25V V GS =10V
20µs pulse width
1 0
4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
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SEMICONDUCTOR IRF3205 Series RoHS
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Fig.5 Typical capacitance vs. Drain-to-Source Fig.6 Typical gate charge vs. Gate-to-Source
voltage voltage
6000 16
V GS = 0V, f =1MHZ l D = 62A
14
C oss = C ds +C gd
V DS = 27V
4000
Ciss 10 V DS = 11V
3000 8
6
2000 Coss
4
1000
Crss 2
0 0
1 10 100 0 20 40 60 80 100 120
Fig.7 Typical Source-Drain diode forward Fig.8 Maximum safe operating area
voltage
10 3 10 4
T J = 17 5°C
Drain current, l D (A)
10 2 10 3
10µs
100µs
10 10 2
1ms
10ms
T J = 25 °C
1 10
Note:
1. T C = 25°C
V GS = 0V 2. T J = 175°C
3. Single Pulse
0.1 1
0.2 0.8 1.4 2.0 2.6 1 10 100 1000
120
LIMITED BY PACKAGE
100
Drain Current, l D (A)
80
60
40
20
0
25 50 75 100 125 150 175
Case temperature, T C ( ° C)
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SEMICONDUCTOR IRF3205 Series RoHS
RoHS
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1
Thermal response, Rth(j-c) (°C/W)
D = 0.5
0.2
0.1 0.1
PDM
0.05
Notes:
1. Duty factor, D = t1/ t2
2. Peak TJ = PDM * Rth(j-c) +TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
RD
V DS
V DS
V GS 90%
RG D.U.T. +
- V DD
10V 10%
Pulse width ≤ 1µs V GS
Duty Factor ≤ 0.1%
t d(ON) t d(OFF)
tR
tF
15V
BV DSS
l AS
DRIVER
L
V DS
l D(t)
V DS(t)
RG V DD
D.U.T. +
V
- DD
l AS A
20V
Time
tP 0.01Ω
tp
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SEMICONDUCTOR IRF3205 Series RoHS
RoHS
Nell High Power Products
300
200
100
0
25 50 75 100 125 150 175
Fig.13a. Basic gate charge waveform Fig.13b. Gate charge test circuit
Current Regulator
Same Type as D.U.T.
V GS
50KΩ
QG
12V 0.2µF
10V
0.3µF
Q GD
+
Q GS V DS
D.U.T. -
V GS
3mA
lG lD
Charge
Current Sampling Resistors
Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET
Re-Applied
• dv/dt controlled by R G Voltage
RG + Body Diode Forward Drop
• Driver same type as D.U.T.
• l SD controlled by Duty Factor " D " V DD Inductor Curent
-
• D.U.T. -Device Under Test
Ripple ≤ 5% ISD
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SEMICONDUCTOR IRF3205 Series RoHS
RoHS
Nell High Power Products
Case Style
TO-220AB
10.54 (0.415) MAX.
3.68 (0.145)
3.43 (0.135)
16.13 (0.635) 15.32 (0.603)
15.87 (0.625) 14.55 (0.573)
PIN 8.89 (0.350)
1 2 3 8.38 (0.330)
4.06 (0.160) 29.16 (1.148)
3.56 (0.140) 28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045) 14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095) 0.90 (0.035)
2.65 (0.104) 0.70 (0.028)
5.20 (0.205) 0.56 (0.022)
2.45 (0.096)
4.95 (0.195) 0.36 (0.014)
TO-263(D 2 PAK)
1.40 (0.055)
9.14 (0.360)
1.19 (0.047)
8.13 (0.320) 15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027) 0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095) 3.56 (0.140)
5.20 (0.205) 2.79 (0.110) D (Drain)
4.95 (0.195)
G
(Gate)
S (Source)
All dimensions in millimeters(inches)
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