AP2302GN

Pb Free Plating Product

Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Capable of 2.5V gate drive BVDSS 20V

▼ Small package outline D RDS(ON) 85mΩ
▼ Surface mount package ID 3.2A

S
SOT-23 G
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness. D

G
S

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±12 V
3
ID@TA=25℃ Continuous Drain Current , VGS @ 4.5V 3.2 A
3
ID@TA=70℃ Continuous Drain Current , VGS @ 4.5V 2.6 A
1,2
IDM Pulsed Drain Current 10 A
PD@TA=25℃ Total Power Dissipation 1.38 W
Linear Derating Factor 0.01 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Thermal Resistance Junction-ambient Max. 90 ℃/W

Data and specifications subject to change without notice 200114054

AP2302GN

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=3.6A - - 85 mΩ
VGS=2.5V, ID=3.1A - - 115 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.2 V
gfs Forward Transconductance VDS=5V, ID=3.6A - 6 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=20V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=20V ,VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=±12V - - ±100 nA
2
Qg Total Gate Charge ID=3.6A - 4.4 - nC
Qgs Gate-Source Charge VDS=10V - 0.6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 1.9 - nC
2
td(on) Turn-on Delay Time VDS=10V - 5.2 - ns
tr Rise Time ID=3.6A - 37 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=5V - 15 - ns
tf Fall Time RD=2.8Ω - 5.7 - ns
Ciss Input Capacitance VGS=0V - 145 - pF
Coss Output Capacitance VDS=10V - 100 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V - - 1 A
1
ISM Pulsed Source Current ( Body Diode ) - - 10 A
2
VSD Forward On Voltage IS=1.6A, VGS=0V - - 1.2 V

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
 AP2302GN

10 7

T A =25 o C 4.5V
6 T A =150 o C
8
3.5V
3.0V 4.5V

ID , Drain Current (A)

ID , Drain Current (A)

5
2.5V 3.5V
6
3.0V
4
2.5V

4
3 V G =2.0V
V G =2.0V
2

0 0
0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 1.8

I D = 3.1 A I D =3.6A
1.6
o V G =4.5V
T A =25 C
90
Normalized R DS(ON)
RDS(ON) (mΩ )

1.4

80 1.2

1.0

70

0.8

60 0.6
2 3 4 5 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

10.0 1.4

1.0
VGS(th) (V)
IF (A)

1.0

o o
T j =150 C T j =25 C
0.6

0.1 0.2
0.1 0.5 0.9 1.3 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) o

T j , Junction Temperature ( C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature
AP2302GN

12 1000
f=1.0MHz

I D =3.6A
10
V DS =4.5V
VGS , Gate to Source Voltage (V)

C (pF)
C iss
6 100

C oss
4

C rss
2

0 10
0 2 4 6 8 10 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthja)

Duty factor=0.5

0.2
10

0.1
0.1

0.05
1ms
ID (A)

1 PDM

0.01
t
T
10ms
0.01 Single Pulse Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.1 100ms ℃ /W
Rthja = 270℃
T A =25 o C
1s
Single Pulse
DC
0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V
QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
 富鼎先進電子股份有限公司
ADVANCED POWER ELECTRONICS CORP.
產 品 尺 寸 圖(無鉛)

Package Outline : SOT-23

D
Millimeters
D1
SYMBOLS MIN NOM MAX
A 1.00 1.15 1.30
A1 0.00 -- 0.10
A2 0.10 0.15 0.25
E1 E D1 0.30 0.40 0.50
e 1.70 2.00 2.30
D 2.70 2.90 3.10
E 2.40 2.65 3.00
E1 1.40 1.50 1.80
e

1.All Dimension Are In Millimeters.

A
2.Dimension Does Not Include Mold Protrusions.
A2
A1

Part Marking Information & Packing : SOT-23

Part Number

N2YY

Date Code

文件編號：QWQAD-7701
版 別：12
頁 碼：53
 富鼎先進電子股份有限公司
ADVANCED POWER ELECTRONICS CORP.

SOT-23 Series D/C Description

P/N

XXSS
Sequence

(1) “XX” is the P/N code (see the P/N list )

(2)“ SS ”is the Sequence: “1∼9”and ”A∼Z”

2-1. "A~Z" showed on 3rd position --> week 1 ~ week 26,
2-2 "A~Z" showed on 4th position --> week 27 ~ week 52.

(3) Add the under line in first Alphabet for Pb-free Product.
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