MP4507

TOSHIBA Power Transistor Module Silicon Triple Diffused Type (Darlington power transistor 4 in 1)

MP4507
Industrial Applications
High Power Switching Applications.
Unit: mm
Hammer Drive, Pulse Motor Drive and Inductive
Load Switching.

· Package with heat sink isolated to lead (SIP 12 pin)

· High collector power dissipation (4 devices operation)
: PT = 5 W (Ta = 25°C)
· High collector current: IC (DC) = ±5 A (max)
· High DC current gain: hFE = 1000 (min) (VCE = ±3 V, IC = ±3 A)

Maximum Ratings (Ta = 25°C)

Rating
Characteristics Symbol Unit
NPN PNP
Collector-base voltage VCBO 100 −100 V
Collector-emitter voltage VCEO 100 −100 V
Emitter-base voltage VEBO 5 −5 V
JEDEC ―
DC IC 5 −5
Collector current A JEITA ―
Pulse ICP 8 −8
Continuous base current IB 0.1 −0.1 A TOSHIBA 2-32B1C

Collector power dissipation Weight: 6.0 g (typ.)

PC 3.0 W
(1 device operation)
Collector power Ta = 25°C 5.0
dissipation PC W
(4 devices operation) Tc = 25°C 25

Isolation voltage VIsol 1000 V

Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C

Array Configuration

R3 R4 7

8 12

9 11
2 4

1 5

R1 R2 6 R1 ≈ 5 kΩ R2 ≈ 200 Ω
R3 ≈ 5 kΩ R4 ≈ 120 Ω

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Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance of channel to

ambient ΣRth (j-a) 25 °C/W
(4 devices operation, Ta = 25°C)
Thermal resistance of channel to case
ΣRth (j-c) 5.0 °C/W
(4 devices operation, Tc = 25°C)
Maximum lead temperature for
soldering purposes TL 260 °C
(3.2 mm from case for 10 s)

Electrical Characteristics (Ta = 25°C) (NPN transistor)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = 100 V, IE = 0 A ― ― 10 µA

Collector cut-off current ICEO VCE = 100 V, IB = 0 A ― ― 10 µA
Emitter cut-off current IEBO VEB = 5 V, IC = 0 A 0.3 ― 2.0 mA
Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 100 ― ― V
Collector-emitter breakdown voltage V (BR) CEO IC = 30 mA, IB = 0 A 100 ― ― V
hFE (1) VCE = 3 V, IC = 0.5 A 1000 ― ―
DC current gain ―
hFE (2) VCE = 3 V, IC = 3 A 1000 ― ―
Collector-emitter VCE (sat) IC = 3 A, IB = 12 mA ― ― 2.0
Saturation voltage V
Base-emitter VBE (sat) IC = 3 A, IB = 12 mA ― ― 2.5
Transition frequency fT VCE = 3 V, IC = 0.5 A 3 ― ― MHz
Collector output capacitance Cob VCB = 50 V, IE = 0 A, f = 1 MHz ― 40 ― pF

Turn-on time ton Output ― 0.5 ―

IB1
Input
10 Ω

20 µs IB2
Switching time Storage time tstg ― 3.0 ― µs
IB1

VCC = 30 V
IB2

Fall time tf ― 2.0 ―

IB1 = −IB2 = 12 mA, duty cycle ≤ 1%

Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Forward current IFM ― ― ― 5 A

Surge current IFSM t = 1 s, 1 shot ― ― 8 A
Forward voltage VF IF = 1 A, IB = 0 A ― ― 2.0 V
Reverse recovery time trr ― 1.0 ― µs
IF = 5 A, VBE = −3 V, dIF/dt = −50 A/µs
Reverse recovery charge Qrr ― 8 ― µC

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 MP4507
Electrical Characteristics (Ta = 25°C) (PNP transistor)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = −100 V, IE = 0 A ― ― −10 µA

Collector cut-off current ICEO VCE = −100 V, IB = 0 A ― ― −10 µA
Emitter cut-off current IEBO VEB = −5 V, IC = 0 A −0.3 ― −2.0 mA
Collector-base breakdown voltage V (BR) CBO IC = −1 mA, IE = 0 A −100 ― ― V
Collector-emitter breakdown voltage V (BR) CEO IC = −30 mA, IB = 0 A −100 ― ― V
hFE (1) VCE = −3 V, IC = −0.5 A 1000 ― ―
DC current gain ―
hFE (2) VCE = −3 V, IC = −3 A 1000 ― ―
Collector-emitter VCE (sat) IC = −3 A, IB = −12 mA ― ― −2.0
Saturation voltage V
Base-emitter VBE (sat) IC = −3 A, IB = −12 mA ― ― −2.5
Transition frequency fT VCE = −3 V, IC = −0.5 A 3 ― ― MHz
Collector output capacitance Cob VCB = −50 V, IE = 0 A, f = 1 MHz ― 40 ― pF

Turn-on time ton ― 0.5 ―

IB2
Output
IB1

IB2
Input

10 Ω
Switching time Storage time tstg 20 µs ― 3.0 ― µs
IB1

VCC = −30 V
Fall time tf ― 2.0 ―
−IB1 = IB2 = 12 mA, duty cycle ≤ 1%

Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Forward current IFM ― ― ― 5 A

Surge current IFSM t = 1 s, 1 shot ― ― 8 A
Forward voltage VF IF = 1 A, IB = 0 A ― ― 2.0 V
Reverse recovery time trr ― 1.0 ― µs
IF = 5 A, VBE = 3 V, dIF/dt = −50 A/µs
Reverse recovery charge Qrr ― 8 ― µC

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 MP4507
(NPN transistor)

IC – VCE IC – VBE
8
5.0 3.0 Common
Common emitter
8 2.0 emitter
VCE = 3 V
Tc = 25°C
1.5
(A)

(A)
6

6 1.0
IC

IC
Collector current

Collector current
0.7
4
4 0.5

IB = 0.3 mA
2 Tc = 100°C −55
2

25
0
0 0
0 2 4 6 8 10 0 0.8 1.6 2.4 3.2 4.0

Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

hFE – IC VCE – IB
30000 2.4
Common emitter Common emitter
(V)

VCE = 3 V Tc = 25°C
2.0
10000
VCE
hFE

5000 Tc = 100°C 1.6 5 IC = 8 A

DC current gain

Collector-emitter voltage

3000
3
25 1.2
1
1000 −55
0.8 0.1

500
0.4
300
)

0.05 0.1 0.3 1 3 10 20

0
0.1 0.3 1 3 10 30 100 300
Collector current IC (A)
Base current IB (mA)

VCE (sat) – IC VBE (sat) – IC

10 10
Common emitter Common emitter
Collector-emitter saturation voltage

Base-emitter saturation voltage

IC/IB = 250 IC/IB = 250

5 5
VCE (sat) (V)

3
VBE (sat) (V)

Tc = −55°C

Tc = −55°C 25
1 1
100
25

0.5 100 0.5

0.3 0.3
0.1 0.3 1 3 10 0.1 0.3 1 3 10

Collector current IC (A) Collector current IC (A)

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 MP4507
(PNP transistor)

IC – VCE IC – VBE

Common
−100 −30 Common emitter
−8 −15 emitter −8
VCE = −3 V
Tc = 25°C
(A)

(A)
−7
−6 −6
IC

IC
−3
Collector current

Collector current
−4 −4

−1

−2 −2 Tc = 100°C −55
IB = −0.3 mA
25
0
0 0
0 −2 −4 −6 −8 −10 0 −0.8 −1.6 −2.4 −3.2 −4.0

Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

hFE – IC VCE – IB
10000
Tc = 100°C Common
Common emitter −2.8
5000 emitter
(V)

VCE = −3 V
25
3000 Tc = 25°C
−2.4
hFE

VCE

−8
DC current gain

−55 −2.0
Collector-emitter voltage

1000
−7

500 −6
−1.6
−5
300
−4
−1.2 −3
−2
100
−1
−0.8
50 IC = −0.1 A
−0.05 −0.1 −0.3 −1 −3 −10 −30
−0.4
−0.1 −0.3 −1 −3 −10 −30 −100 −300 −500
Collector current IC (A)
Base current IB (mA)

VCE (sat) – IC VBE (sat) – IC

−10 −10
Common emitter Common emitter
Collector-emitter saturation voltage

Base-emitter saturation voltage

IC/IB = 250 IC/IB = 250

−5 −5

−3 −3
VCE (sat) (V)

VBE (sat) (V)

Tc = −55°C

Tc = −55°C 25
−1 −1
100

−0.5 100 25 −0.5

−0.3 −0.3
−0.1 −0.3 −1 −3 −10 −0.1 −0.3 −1 −3 −10

Collector current IC (A) Collector current IC (A)

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 MP4507

rth – tw
300
Curves should be applied in thermal
(°C/W) limited area. (single nonrepetitive pulse) (4)
100 Below figure show thermal resistance per
1 unit versus pulse width.

30
rth

(3)
Transient thermal resistance

(2)
10
(1)

-No heat sink and attached on a circuit board-

1
(1) 1 device operation

(2) 2 devices operation

0.3
(3) 3 devices operation
Circuit board
(4) 4 devices operation
0.1
0.001 0.01 0.1 1 10 100 1000

Pulse width tw (s)

Safe Operating Area (NPN Tr) Safe Operating Area (PNP Tr)
30 −30

10 IC max (pulsed)* −10 IC max (pulsed)*

100 µs* 100 µs*
5 1 ms* −5
10 ms* 10 ms* 1 ms*
(A)

(A)

3 −3
IC

IC
Collector current

Collector current

1 −1

0.5 −0.5

0.3 −0.3

*: Single nonrepetitive pulse *: Single nonrepetitive pulse

Tc = 25°C Tc = 25°C
0.1 −0.1
Curves must be derated Curves must be derated
0.05 linearly with increase in −0.05 linearly with increase in
temperature. VCEO max temperature. VCEO max
0.03 −0.03
1 3 10 30 100 300 −1 −3 −10 −30 −100 −300

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

PT – Ta ∆Tj – PT
8 160
(1) 1 device operation
(°C)

(2) 2 devices operation

(W)

(3) 3 devices operation (3) (4)

(1) (2)
Junction temperature increase ∆Tj

(4) 4 devices operation

6 120
PT

Attached on a circuit board

(4)
Total power dissipation

(3)

4 80
(2) Circuit board
Circuit board
(1) Attached on a circuit board
2 40 (1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
0 0
0 40 80 120 160 200 0 2 4 6 8 10

Ambient temperature Ta (°C) Total power dissipation PT (W)

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 MP4507

RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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