EE2027 - Consolidated List of Equations (Mid-Term Quiz)
EE2027 - Consolidated List of Equations (Mid-Term Quiz)
EE2027 - Consolidated List of Equations (Mid-Term Quiz)
10 |Power Gain|
Voltage Ratio in Decibel (dB)
dB 20
20 |Voltage Gain|
Power in dBm
10
1 mW
3dB frequency of a RC 1 Output power decreases to half
passive filter 2 of its maximum value at .
∗ ∗
Real (Average) Power Re Re and are the rms value of
voltage and current, respectively
1
II. Semiconductor pn Junction Diode
I =bD
Breakdown region : R
*V = VD
I in =
2
III. Bipolar Junction Transistor (BJT)
ideal emitter
VA is Early voltage
Collector current of an pnp / iC flows out of the collector
BJT (ideal case)
vEB is the voltage at the emitter
with-respect-to the base
Collector current of an pnp /
1 vEC is the voltage at the emitter
BJT (with Early effect) with-respect-to the collector
Common-emitter current gain = /
Emitter current =
( Ptl ) IB .
Gt IB R , t VEB
3
tic
BIB
=
1.2×10-3=100 ( IB)
(p =
IV. Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
2×10-3
gate oxide.
saturation region =
sat
Conductance parameter of 1
an n-MOSFET 2
Drain current of a p- 1 Valid for
| | | | | | | | | |
MOSFET operating in the 2 | | | |
linear region 2 | | | | | | | | | | | |
Drain current of a p- 1 Valid for
| | | | | |
MOSFET operating in the 2 | | | |
saturation region | | | | | | | |
Conductance parameter of 1
a p-MOSFET 2
Drain-to-source resistance 1 '
-
kn ( VGS -
Hh )
the n-MOSFET operating
in the linear region (small > VGS Vth
VDS) VDS -
Drain-to-source resistance 1
in the large signal model of 2 | | | |
If Vas -_ 4, Ip 0.5
"
the p-MOSFET operating 0.5 =Kn( 4 -
Vth )
in the linear region (small
|VDS|)
I > 4 -
ha
0.812.4
Ups > Vas Vth Vth< 3 VDS Vas Uh
- > -
0.5
kn VTHLVGS Vps
-
3
-
O > - . -
4
VDD =
10
✓Th
Transconductance in the 2 2 ID is the drain
small signal model of an n- 2 / current at the dc
MOSFET operating point.
Transconductance in the
2 | | | | 2 | |
small signal model of a p-
MOSFET 2| |/ | | | |
Output resistance in the 1 VA is Early voltage
small signal model
is the channel
length modulation
factor.
PMOS :
'
VDS ,
Vas , Vin
=
negative .
-
In linear region, Nos l E Nas l 14h I -
-
lip I Kp ( IV as I
Z
=
I Ven 1) -
g
,
PMOS
Both functions the same The difference is in the biasing polarities If Vas 3 Vin Vas Vos
Vas Vth
-
.
Vps =
.
= -
-
= VGS -
Vast Vth
and direction of drain current, ID .
= Van
.
i , ⇒ drain current
When V Vas Vin in [ pinched off]
-
-
:
-
s
-
-
.
NMOS
approximately constant
:
Vth )
-
ia O
-
tf Vos >
(Vas -
Ip .
saturated
→ -
,
ID
-
[ Saturation
region]
=
O io O when v. s >O
→
when Vas
- -
- -
.
→ if Vas > O it
,
will be depletion region .
-
At sat .
Th
if Vas >O id
-
O
Regions
- -
. -
:
,
'
[cut-off region]
-
tf Vas 3 Vth
,
lip can flow between
source and drain when Vos > O .
If Vas 3 V th ie T as VDS T .
,
-