APPENDIX: EE2027 Summary of Equations

I. Review of Basic Concepts

Quantity Equation Remarks

Average value of 1

Root Mean Square (rms) value

1
of

Power Ratio in Decibel (dB)

dB 10

10 |Power Gain|
Voltage Ratio in Decibel (dB)
dB 20

20 |Voltage Gain|
Power in dBm
10
1 mW
3dB frequency of a RC 1 Output power decreases to half
passive filter 2 of its maximum value at .

∗ ∗
Real (Average) Power Re Re and are the rms value of
voltage and current, respectively

Apparent Power (or Voltage - | || |

Current Rating)
Power Factor cos ) - leading power factor
- lagging power factor
Power Transfer is maximum when

1 
 
II. Semiconductor pn Junction Diode

Quantity Equation Remarks

Current-voltage (IV) IS is the pn junction diode
relationship of a “real” pn- 1 saturation current.
junction diode
VT is thermal voltage (VT =
kT/q ≈ 0.025 V at T = 300 K)
n is the exponential factor and
has a value between 1 and 2.
n = 1 for ideal pn junction
diode.
Diode small signal resistance
(or incremental resistance)

Forward bias: Reverse bias :

I =bD
Breakdown region : R

*V = VD

I in =

2 
 
 III. Bipolar Junction Transistor (BJT)

Quantity Equation Remarks

Collector current of an npn / iC flows into the collector

BJT (ideal case)
Forward
IS is the saturation current of
•

active VBE > O ,

,
collector.*
VBCLO .

vBE is the voltage at the base

with-respect-to the emitter
VT is thermal voltage (VT =
kT/q ≈ 0.025 V at T = 300 K)
Collector current of an npn /
1 vCE is the voltage at the
BJT (with Early effect) collector with-respect-to the
↳ non -

ideal emitter
VA is Early voltage
Collector current of an pnp / iC flows out of the collector

BJT (ideal case)
vEB is the voltage at the emitter
with-respect-to the base
Collector current of an pnp /
1 vEC is the voltage at the emitter
BJT (with Early effect) with-respect-to the collector
Common-emitter current gain = /

Base current of an npn BJT VT

k¥20.025
=
/ at T -300K
-

Emitter current =
( Ptl ) IB .

Transconductance in the small- IC is the collector current at the

signal model dc bias point
Input resistance in the small-
signal model

Output resistance in the small-

signal model

*IS is also used to denote the saturation current of a pn junction diode.

VCE VBE VBC

- -

By KCL ie ictir Vi t IBR , t VE B t IE RIK

-

Gt IB R , t VEB

3 
tic
BIB
=

  1.2×10-3=100 ( IB)
(p =
IV. Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

Quantity Equation Remarks

Gate oxide per unit area , tox is the gate oxide
thickness.
εox is the
Kh -_ 0.8 permittivity of the

2×10-3
gate oxide.

ID =/ - εr,ox is the relative

permittivity of the
gate oxide.
= 8.854×10-14
F/cm is the
permittivity of free
Vg= Vs + Vgs space.
Saturation drain voltage for
n-MOSFET
Saturation drain voltage for | | | | | | | |
p-MOSFET
Drain current of an n- 1 Valid for
MOSFET operating in the 2
linear region 2

Drain current of an n- 1 Valid for

MOSFET operating in the 2 '
-
Vas Vth
-

saturation region =
sat

Conductance parameter of 1
an n-MOSFET 2
Drain current of a p- 1 Valid for
| | | | | | | | | |
MOSFET operating in the 2 | | | |
linear region 2 | | | | | | | | | | | |
Drain current of a p- 1 Valid for
| | | | | |
MOSFET operating in the 2 | | | |
saturation region | | | | | | | |
Conductance parameter of 1
a p-MOSFET 2
Drain-to-source resistance 1 '

in the large signal model of 2 Ip

-

-
kn ( VGS -
Hh )
the n-MOSFET operating
in the linear region (small > VGS Vth
VDS) VDS -

Drain-to-source resistance 1
in the large signal model of 2 | | | |
If Vas -_ 4, Ip 0.5
"
the p-MOSFET operating 0.5 =Kn( 4 -
Vth )
in the linear region (small
|VDS|)
I > 4 -
ha
0.812.4
Ups > Vas Vth Vth< 3 VDS Vas Uh
- > -

0.5
kn VTHLVGS Vps
-

3
-

O > - . -

4 
  VDD =
10
✓Th
 Transconductance in the 2 2 ID is the drain
small signal model of an n- 2 / current at the dc
MOSFET operating point.
Transconductance in the
2 | | | | 2 | |
small signal model of a p-
MOSFET 2| |/ | | | |
Output resistance in the 1 VA is Early voltage
small signal model
is the channel
length modulation
factor.

Drain current of an n- 1 Valid for

1
MOSFET operating in the 2
saturation region (with 1
channel length modulation
effect)
Drain current of a p- 1 Valid for
| | | | | | 1
MOSFET operating in the 2 | | | |
saturation region (with | | | | | |
channel length modulation | | | | 1 | |
effect)

PMOS :
'

VDS ,
Vas , Vin
=
negative .

-
In linear region, Nos l E Nas l 14h I -
-

lip 1=2 Kp [( l Vas l l Vin 1) Host II Vos 12 ]

-
-

In saturation region, Nbs 131 Vast Hint

-
-

lip I Kp ( IV as I
Z
=
I Ven 1) -

Large signal model :

g
,

NMOS indicates direct

of current flow

divider method or thevenin method

solve
using voltage
-
.

PMOS
Both functions the same The difference is in the biasing polarities If Vas 3 Vin Vas Vos
Vas Vth
-
.

Vps =
.
= -
-

of drain to source voltage, Vps and gate

,
- - -
to -
sourcevoltage Vas ,
.

= VGS -
Vast Vth
and direction of drain current, ID .

= Van
.

i , ⇒ drain current
When V Vas Vin in [ pinched off]
-
-

:
-

s
-
-
.

NMOS
approximately constant
:

Vth )
-

ia O
-

tf Vos >
(Vas -
Ip .

saturated
→ -

,
ID
-

[ Saturation
region]
=
O io O when v. s >O
→
when Vas
- -
- -
.

→ if Vas > O it
,
will be depletion region .
-

At sat .

region , Vossat = Was -

Th

if Vas >O id
-

O
Regions
- -
. -
:
,

Vas at which the surface of p i . depends on Vos d Vas ⇒ f- ( VDS , Vas)

type Linear :
-
' -

Sllbtrate becomes inverted is -

sat ip independent on Vos ⇒ in = f Nas)

.
:

threshold voltage , Vth .

-

Ups = Vossat = Vas Vth -

V in > O for NMOS

" -

'

If Vass Ven i 20 even with Vos > O

,

[cut-off region]
-

tf Vas 3 Vth
,
lip can flow between
source and drain when Vos > O .

If Vas 3 V th ie T as VDS T .

,
-

For specific Vas 3 Vth for small Vps >O, 5 

i DM with Vos T [ Linear region]
 
.