SKM 400GB12T4: Semitrans 3

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SKM 400GB12T4

Absolute Maximum Ratings 


-6 7&  $       ,
Symbol Conditions Values Units
IGBT
4 :
-6 7 5-.. 
 :
5=6 7 
-6 7 '5. 1

>. 7 =6 1
?+ ?+
@ ( )*+ 5-.. 1
4 A -. 
 
B  ; B 4 C :
7 D
SEMITRANS® 3 
Inverse Diode
IGBT4 Modules E :
5=6 7 
-6 7 . 1

>. 7 @@. 1
E?+ E?+
@ ( E)*+ 5-.. 1
SKM 400GB12T4 E4+ 
5. B  :
5=6 7 -5F. 1
Module
?+4 6.. 1
Target Data : 8 . 95=6 7
" 8 . 95-6 7

Features $ 1& 5  ... 

 
   
 Characteristics 
-6 7&  $       ,
       Symbol Conditions min. typ. max. Units
   IGBT
 !"   #$%&  $  
& 
5' 1 6 6&> '&6 
$ "  ' ( )*+
4 
. & 
4 :
-6 7 1
 $    $,      -.
. :
-6 7 .&> .&F 
/!0
:
56. 7 .&= .&> 
Typical Applications  
56  :
-67 -&6 -&> G
 1     ,  :
56.7 @&> G
 234   
.. 1& 
56  :
-67$  5&> - 
 $    $,      -. :
56.7$  -&- -& 
/!0   - &> E
  
-6& 
. 
5 +!0 5&' E
Remarks
  5& E
     $ ,  

5-67 (&   


8 . H 
8> I956 --6. 
956.7& ,  $  $ $, ?  :
-6 7 5&F J
 :;56.7 ,  
 ?
5 G 
'.. 
  
..1 K
,  ?
5 G :
56. 7 
 
8> 
 . K
?:8    .&.=- LIM

GB

1 21-08-2007 SCH © by SEMIKRON


SKM 400GB12T4
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
E
 E 
.. 1B 
.  :
-6 7$  -&- -&6 
:
56. 7$  -&5 -& 6 
E. :
-6 7 5&@ 5&6 
:
56. 7 .&F 5&5 
E :
-6 7 -&-6 -&6 G
:
56. 7 @ 5&@6 G
® ??+ E 
.. 1 :
56. 7 1
SEMITRANS 3 H D
 
8> @@ K
IGBT4 Modules ?:8   ,, .&5 LIM
Freewheeling Diode
E
 E 
1B 
 :
7$  
SKM 400GB12T4
E. :
7 
E :
7 
??+ E 
1 :
7 1
Target Data H D
 K
  ,, LIM
Features
 
    Module
 N 56 -. !

       ?O9O   &   $8 


-6 7 .&@6 G
   
5-6 7 .&6 G
 !"   #$%&  $ ?8   ,$ .&.- .&.@> LIM
$ "  ' ( )*+
+     / +' @ 6 )
 $    $,      -.
/!0 +    $ +' -&6 6 )
 @-6 "
Typical Applications
 1     , 
 234
 $    $,      -.
/!0 This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Remarks
This technical information specifies semiconductor devices but promises no
     $ ,  
characteristics. No warranty or guarantee expressed or implied is made regarding
5-67 (&   
8 .
delivery, performance or suitability.
956.7& ,  $  $ $,
 :;56.7

GB

2 21-08-2007 SCH © by SEMIKRON


SKM 400GB12T4

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC)

Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic

3 21-08-2007 SCH © by SEMIKRON


SKM 400GB12T4

Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic

4 21-08-2007 SCH © by SEMIKRON


SKM 400GB12T4
UL recognized file no. E 63 532

 P6'

  P6'

5 21-08-2007 SCH © by SEMIKRON

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